A key component of the OCT technique is the light source with widely spectrum. Extremely broadband 1.0 μm semiconductor light sources are fabricated with two kinds of device structures of multiplexing emitting layer....
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A key component of the OCT technique is the light source with widely spectrum. Extremely broadband 1.0 μm semiconductor light sources are fabricated with two kinds of device structures of multiplexing emitting layer. The measured spectra of the fabricated device with "longitudinal bandgap modulated structure" show that the full-width at half-maximum spectral width could be as large as 156 nm. The wavelength swept sources which contain a fabricated device with "asymmetric dual emitting layers structure" have a center wavelength of 1.06 μm, wavelength range of 90 nm, scanning rate of 2kHz.
Laser diodes for plastic optical fiber (POF) data links are required stable operation >100,000h at 60C, 5mW and the transmission speed beyond 1Gbps. By optimizing crystal growth conditions and device structures, we...
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We developed a new metasurface for spectrally-controlled reflection film [1]. This structure is composed of dispersed silver disk-shaped nano-particles in a monolayer on the transparency film. Wavelength of reflection...
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We propose and demonstrate a novel practical femtosecond laser source, which is to our knowledge, the smallest size and potentially low cost. The innovation is the simple linear cavity design utilizing soliton mode-lo...
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Semiconductor light emitting device with a high-power output and a broadband spectrum characteristic is valid as the light source for the optical sensing system. However, a high-power and a broadband spectrum characte...
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We have developed an image sensor with thin organic photoconductive film (OPF) laminated on CMOS circuits. Owing to high capacity of a charge storage node, the saturation level is 12 dB higher than those of convention...
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We have developed an image sensor with thin organic photoconductive film (OPF) laminated on CMOS circuits. Owing to high capacity of a charge storage node, the saturation level is 12 dB higher than those of convention...
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More than 10,000 hours accelerated life tests have been carried out for 660 nm GaInP/AlGaInP laser diodes at 5 mW output power. The median lifetime at 60degC is estimated to be 1times10 6 hours
More than 10,000 hours accelerated life tests have been carried out for 660 nm GaInP/AlGaInP laser diodes at 5 mW output power. The median lifetime at 60degC is estimated to be 1times10 6 hours
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