The Galaxy Express (gx) launch vehicle currently under development is targeted to meet market demands in the medium class payload-lifting arena. A joint venture between the Galaxy Express Corporation (GALEX), other Ja...
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Chalcopyrite compounds are promising thermoelectric (TE) materials owing to their excellent performance. Adopting a pseudocubic structure is a key strategy to improve the TE performance as it increases the degeneracy ...
Chalcopyrite compounds are promising thermoelectric (TE) materials owing to their excellent performance. Adopting a pseudocubic structure is a key strategy to improve the TE performance as it increases the degeneracy at the valence band edge. Herein, the TE properties of a II-IV-V 2 group, p-type ZnSnAs 2 chalcopyrite with a pseudocubic structure are systematically investigated. Polycrystalline, single phase, stoichiometric ZnSnAs 2 was obtained at growth temperatures above 700 ºC. The TE properties of ZnSnAs 2 depended on its intrinsic defect concentration, which was influenced by its Zn/Sn ratios. A high power factor value of 2890 μW/mK 2 was obtained in Zn-poor Zn 0.9 Sn 1.1 As 2 at 373 K. The TE figure of merit for the off-stoichiometric ZnSnAs 2 reached 0.1 at 573 K. Consequently, a maximum TE conversion efficiency of ∼1 % at a temperature gradient of 300 K was demonstrated for a ZnSnAs 2 -based single-leg device. These results can accelerate the development of TE technologies for low-energy harvesting.
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