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32nd IEEE International Symposium on Industrial Electronics, ISIE 2023

作者： Liou, Cheng-Fu Lee, Tsung-Han Guo, Jiun-In National Yang Ming Chiao Tung University Graduate Degree Program of College of Electrical and Computer Engineering Hsinchu Taiwan Wistron-NCTU Embedded Artificial Intelligence Research Center National Yang Ming Chiao Tung University Hsinchu Taiwan

ISBN: (纸本)9798350399714

The You Only Learn One Representation (YOLOR) approach is an object detector that can encode implicit knowledge and explicit knowledge of multiple tasks simultaneously. However, the requirement of jointly feeding data is not a friendly setting for an edge device due to the high computational cost. A better strategy is to learn the concept of the new task on the device individually, one by one, without access to the old data. In other words, the model has to deal with multiple tasks asynchronously. In this work, we extend the multi-purpose network YOLOR to asynchronous multi-task learning to learn domain invariant features, which focus on capturing the relatedness between the weight of the previous task and data of the subsequent task. Further, as the number of tasks gradually increases, we accumulate significant weights by introducing task-specific masks and expert modules;the former can automatically identify important filters to prevent modification caused by new tasks, and the latter address the kernel space misalignment problem to perform multi-task feature selection. We experimentally demonstrate that the proposed training strategy significantly outperforms the traditional solution in learning multiple tasks at different times on a public dataset, which supports that the proposed approach is more competitive for resource-limited edge devices. © 2023 IEEE.

关键词： Object detection

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Temperature-Dependent Hydrogen Modulations of Ultra-Scaled a-IGZO Thin Film Transistor Under Gate Bias Stress

IEEE Open Journal of Nanotechnology

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IEEE Open Journal of Nanotechnology 2024年 5卷 9-16页

作者： Aslam, Muhammad Chang, Shu-Wei Chuang, Min-Hui Chen, Yi-Ho Lee, Yao-Jen Li, Yiming Parallel and Scientific Computing Laboratory National Yang Ming Chiao Tung University Hsinchu300093 Taiwan Electrical Engineering and Computer Science International Graduate Program National Yang Ming Chiao Tung University Hsinchu300093 Taiwan Department of Electrical Engineering National Cheng Kung University Tainan701401 Taiwan Institute of Communications Engineering National Yang Ming Chiao Tung University Hsinchu300093 Taiwan Graduate Degree Program of College of Electrical and Computer Engineering National Yang Ming Chiao Tung University Hsinchu300093 Taiwan Institute of Pioneer Semiconductor Innovation National Yang Ming Chiao Tung University Hsinchu300093 Taiwan Institute of Biomedical Engineering National Yang Ming Chiao Tung University Hsinchu300093 Taiwan Department of Electronics and Electrical Engineering National Yang Ming Chiao Tung University Hsinchu300093 Taiwan

Recently, a-IGZO has advanced toward the next-generation electronics system because of its compatibility with complementary metal oxide semiconductor (CMOS) and back-end-of-line (BOEL) based systems. A systematic electrical characterization of a-IGZO TFT related to reliability issues, such as positive bias temperature stress (PBTS) and negative bias temperature stress (NBTS), would entitle its integration into novel electronics systems. Unexpectedly, PBTS is characterized by the transition of positive Vth shift to negative Vth shift (ΔVth, the positive shift followed by the stress and temperature activated negative shift). This transition is attributed to charge trapping/trap-site generations and hydrogen migration to the active layer. The ΔVth shift mechanism depends on the temperature and voltage stress. On the other hand, a negative ΔVth shift has been observed during the NBTS operation and could be attributed to the hole trapping at the interface of GI/IGZO. An effective suppression of the gate leakage current has also been observed during reliability tests. Simulation results reveal a pronounced potential at the edges of source and drain regions, and considered the origin of hydrogen migration into the IGZO layer. Thermal image results also reveal the strong temperature/potential distribution at the edges of the source/drain regions, indorsing the simulation results. © 2020 IEEE.

关键词： Oxide semiconductors

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Nonlinear Twistronics for EM Waves

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IEEE Transactions on Antennas and Propagation 2025年

作者： Valagiannopoulos, Constantinos Alu, Andrea National Technical University of Athens School of Electrical and Computer Engineering Athens15780 Greece City University of New York Photonics Initiative Advanced Science Research Center New YorkNY10031 United States City College of The City University of New York Department of Electrical Engineering New YorkNY10031 United States City University of New York Physics Program Graduate Center New YorkNY10016 United States

The electromagnetic (EM) interaction between two anisotropic nonlinear metasurfaces, under arbitrary rotations of their optical axes, is rigorously studied. Multistability conditions with respect to rotation angles between the two surfaces are determined and explored. The examined setup demonstrates opportunities for memory and storage since these in-plane rotations may act as continuous information carriers. The abrupt transitions of the system response, from one solution branch to the other, materialize the concept of twistronics engineering in the classical EM regime, sensitive to small angular changes. These findings can enhance the design of several photonic devices from ultra-sharp sensors and switches to analog information processors and optical memory elements. © 1963-2012 IEEE.

关键词： Optical bistability

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Enhancing the Performance of E-Mode AlGaN/GaN HEMTs With Recessed Gates Through Low-Damage Neutral Beam Etching and Post-Metallization Annealing

IEEE Open Journal of Nanotechnology

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IEEE Open Journal of Nanotechnology 2023年 4卷 150-155页

作者： Chen, Yi-Ho Ohori, Daisuke Aslam, Muhammad Lee, Yao-Jen Li, Yiming Samukawa, Seiji National Yang Ming Chiao Tung University Parallel and Scientific Computing Laboratory Graduate Degree Program of College of Electrical and Computer Engineering Hsinchu300093 Taiwan Tohoku University Institute of Fluid Science Sendai980-8577 Japan National Yang Ming Chiao Tung University Parallel and Scientific Computing Laboratory Electrical Engineering and Computer Science International Graduate Program Hsinchu300093 Taiwan National Yang Ming Chiao Tung University Institute of Pioneer Semiconductor Innovation Hsinchu300093 Taiwan National Yang Ming Chiao Tung University Parallel and Scientific Computing Laboratory Institute of Communications Engineering Institute of Biomedical Engineering Hsinchu300093 Taiwan National Yang Ming Chiao Tung University Department of Electronics and Electrical Engineering Hsinchu300093 Taiwan National Yang Ming Chiao Tung University Institute of Communications Engineering Hsinchu300093 Taiwan

This study investigated the electrical properties of AlGaN/GaN high-electron-mobility transistors (HEMTs) with varied recess depths under the gate electrode. We demonstrated a recess depth of approximately 6 nm, which was achieved through neutral beam etching (NBE) technique with a low etch rate of 1.8 nm/min, resulting in device enhancement-mode (E-mode) behavior with threshold voltage (Vth) of 0.49 V. The effects of post-metallization annealing (PMA) on the device performance were also examined. The results revealed that PMA treatment improves the DC characteristics of the devices, including maximum drain current (IDMAX), transconductance (gm), subthreshold swing (SS), on-off ratio, and off-state leakage current, with maximum enhancement percentage of 18.3% for IDMAX, 3758% for on-off ratio, and 54.3% for SS. Moreover, this study compared the recess depths of metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs) with the SiN dielectric layer. The results showed that MIS-HEMTs exhibit more negative Vth values, which can be attributed to the controlled surface states achieved through passivation. © 2020 IEEE.

关键词： Etching

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Data Alignment Design for Robotic programming by Demonstration Based on IMU and Optical Tracker

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IEEE Transactions on Instrumentation and Measurement 2023年 72卷 1页

作者： Song, Kai-Tai Li, Bing-Yi Ou, Szu-Chen National Yang Ming Chiao Tung University Institute of Electrical and Control Engineering College of Electrical and Computer Engineering Hsinchu300093 Taiwan National Yang Ming Chiao Tung University Graduate Degree Program of Robotics Hsinchu300093 Taiwan

This study proposes a data alignment design for sensor fusion of an optical target (OT) and an inertial measurement unit (IMU) to track the trajectory of a handheld tool for robot programming by demonstration (PbD). A novel method is proposed for coordinate and temporal alignment between the OT and the IMU sensor to increase tracking accuracy. The IMU measurements are aligned with the corresponding angular velocities and accelerations derived from the OT to calibrate the IMU-OT relationship. Global and local optimizations are combined to reduce the computation time for the temporal alignment and coordinate calibration. Experimental results show that the proposed method provides improved calibration results with shorter calculation time compared with the two existing methods. The sensor fusion experiments verify the accuracy of trajectory tracking of 1.3 mm using the calibration result, an improvement from 1.4 mm of the data alignment using ruler measurement. Integrated PbD experiments using a 6-DOF manipulator were carried out to evaluate the proposed method. The manipulator imitated the hand motion of a bottle transfer task with a trajectory error of 0.66 mm. Practical robotic experiments demonstrate that the method is suitable for robot programming applications. © 1963-2012 IEEE.

关键词： Calibration

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A Design for Improvement of Visual SLAM in Dynamic Environments Using Feature-Point Removal of Moving Persons

A Design for Improvement of Visual SLAM in Dynamic Environme...

引用

International Automatic Control Conference

作者： Kai-Tai Song Ching-Hao Meng Institute of Electrical and Control Engineering College of Electrical and Computer Engineering National Yang Ming Chiao Tung University Hsinchu Taiwan Graduate Degree Program of Robotics College of Engineering National Yang Ming Chiao Tung University Hsinchu Taiwan

This paper presents a design to improve the robustness of visual SLAM(vSLAM). A processing step of feature-removal is added to the tracking thread of the conventional ORB-SLAM2 algorithm to improve the localization accuracy of a mobile robot in an environment with moving persons. Instance segmentation and motion tracking are intergrated to identify motion state of people in an image. ORB feature points belonging to moving persons are removed for further processing of the vSLAM pipeline. The advantage of this method is that the vSLAM can remove feature points of moving people, while retain those belonging to static people in the environment, which improves the accuracy of robot pose estimation. The improved ORB-SLAM2 algorithm has been implemented in a NVIDIA Xavier embedded system, which is integrated to a mobile robot. In practical robot navigation experiments, the average positioning error of the proposed method is within 4cm for 22.4m travel distance. Compared with conventional ORB-SLAM2, the average accuracy of our vSLAM method improves 97% in a dynamic environment with moving people.

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Correlating the Ambient Conditions and Performance Indicators of the LoRaWAN via Surrogate Gaussian Process-Based Bidirectional LSTM Stacked Autoencoder

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IEEE Transactions on Network and Service Management 2023年第3期20卷 3413-3427页

作者： Bhat, Showkat Ahmad Huang, Nen-Fu Hussain, Imtiyaz Sajjad, Uzair National Tsing Hua University College of Electrical and Computer Science Hsinchu1300044 Taiwan National Tsing Hua University Department of Computer Science Hsinchu1300044 Taiwan National Taipei University of Technology Graduate Program in Energy and Opto-Electronic Materials Taipei10608 Taiwan National Taipei University of Technology Department of Energy and Refrigerating Airconditioning Engineering Taipei10608 Taiwan

LoRa's biggest advantage is its flexibility, which is the ability to increase or decrease data rate and range while decreasing or increasing sensitivity. Whenever propagation conditions change frequently, this function allows the spreading factor to be modified accordingly. Despite their efficiency and scalability, adaptive data rate algorithms ignore and fail to factor in the complex correlation between ambient weather parameters influencing the communication channel design. In this research, a Bayesian surrogate Gaussian process-based bidirectional LSTM stacked autoencoder model (BSGP-BLSTM-SAE) is proposed to estimate the channel performance indicators such as received signal strength indicator (RSSI) and signal-to-noise ratio (SNR) and to determine the correlation between the ambient weather conditions and performance indicators for the LoRaWAN network. Bayesian optimization algorithm has been used to optimize the hyper-parameters of the developed model. A LoRaWAN experimental multivariate time series dataset has been used for the evaluation of the developed model, which upon testing and validation produces high accuracy in predicting the channel performance indicators and ambient conditions of the experimental LoRaWAN network. The mean absolute error of the developed model was around 0.45. Thus, the proposed model can predict the link performance indicators and thereby assist in real-time optimization of the transmission parameters to enhance the network performance in LoRaWAN-based systems at different ambient conditions. © 2004-2012 IEEE.

关键词： Internet of things

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Beam steering performance of electrowetting microprism arrays

Beam steering performance of electrowetting microprism array...

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Enabling Photonics Technologies for Defense, Security, and Aerospace Applications V

作者： Han, Wei Haus, Joseph W. Mcmanamon, Paul Heikenfeld, Jason Smith, Neil R. Yang, Jia Electro-Optics Graduate Program University of Dayton 300 College Park Dayton OH 45469-0245 United States Electrical and Computer Engineering Dept. University of Cincinnati Cincinnati OH 45221-0030 United States

ISBN: (纸本)9780819476050

We perform numerical calculations for the diffraction efficiency of single-sided microprism designs with optical beams spread over several microprisms. For small angles (less than 1.5 degrees) the far-field diffraction efficiency exceeds 90% and the far-field angles can be extended to more than 10 degrees with better than 80% diffraction efficiency. For the microprism array the diffraction angles are discrete and the angles between the diffraction peaks can be covered by applying a tilted phase to the input field. ©2009 SPIE.

关键词： Wetting

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Predicting Microsatellite Instability from Histology Images with Dilated Neighborhood Attention Transformer in Colorectal Cancer 24

Predicting Microsatellite Instability from Histology Images ...

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24th IEEE International Conference on Bioinformatics and Bioengineering, BIBE 2024

作者： Chen, Yun-Chi Chao, Tung Phandita, Wimaya Nitya Sun, Tzu-Yu Wang, Huai-Zhi Hsieh, Yi-Hsien Hsu, Le-Yin Lin, Che Taipei Taiwan College of Bioresources and Agriculture NTU Taipei Taiwan National Taiwan University of Science and Technology Department of Computer Science and Information Engineering Taipei Taiwan Graduate Institute of Communication Engineering NTU Taipei Taiwan NTU Data Science Degree Program Taipei Taiwan NTU Department of Electrical Engineering Taipei Taiwan Center for Advanced Computing and Imaging in Biomedicine NTU Taipei Taiwan NTU Smart Medicine and Health Informatics Program Taipei Taiwan

ISBN: (纸本)9798331518622

Microsatellite instability (MSI) is a pivotal genetic marker influencing the efficacy of immunotherapy in colorectal cancer. Traditional MSI examination often requires additional genetic or immunohistochemical tests, whereas histology images, widely available in colorectal cancer diagnosis, offer a valuable alternative for MSI prediction. Although Transformer-based models have demonstrated promising outcomes in predicting MSI from histology images, they are hampered by traditional local attention mechanisms that struggle to capture long-range interdependencies and establish a comprehensive global receptive field. In this study, we introduce DiNAT-MSI, a novel framework for histology-based MSI prediction that incorporates the Dilated Neighborhood Attention Transformer (DiNAT). This model enhances global context recognition and substantially expands receptive fields, all without additional computational burden. Our results demonstrate that DiNAT-MSI achieves a superior patientwise AUROC compared to ResNet18 and Swin Transformer, along with commendable explainability. Our work not only illustrates a more accessible diagnostic tool for leveraging histological data but also underscores the potential of Transformerbased models with sophisticated attention designs in advancing precision medicine for colorectal cancer patients. © 2024 IEEE.

关键词： Diseases

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The Impact of Hot Carrier Injection-Induced Device Degradation for Lower-Power FinFETs

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Journal of Electronic Materials 2023年第2期52卷 1391-1399页

作者： Chen, Yu-Lin Yeh, Wen-Kuan Hsu, Heng-Tung Chen, Ke-Horng Lien, Der-Hsien Lin, Wen-Chin Yu, Tien-Han Chiu, Yu-Sheng Godwinraj, D. Godfrey, D. Wu, Chien-Hung International College of Semiconductor Technology National Yang Ming Chiao Tung University Hsinchu Taiwan Graduate Degree Program of College of Electrical and Computer Engineering National Yang Ming Chiao Tung University Hsinchu Taiwan Institute of Electronics National Yang Ming Chiao Tung University Hsinchu Taiwan Institute of Microelectronics National Cheng Kung University Tainan Taiwan Department of ECE Amal Jyothi College of Engineering Kerala Kottayam India Department of Optoelectronics and Materials Engineering Chung Hua University Hsinchu Taiwan Department of Electronics and Communication Engineering Dayananda Sagar University Bengaluru India National Applied Research Laboratories Hsinchu Taiwan

The impact of hot carrier injection (HCI) on the performance of standard and low-VT FinFETs are investigated and benchmarked with each other. For this investigation, these FinFETs were fabricated with various gate lengths (L) from 16 to 36 nm. HCI-induced transconductance degradation in standard devices for gate length variations of 36 nm down to 16 nm was 75%, while it was 35% for low-VT devices. Similarly, the degradation of threshold voltage in standard devices for gate length variations of 36 nm down to 16 nm was 39%, while it was 36% for low-VT device. In this work, as the device is subject to HCI, we found that: (1) short-channel devices cause severe degradation on the threshold voltage and transconductance (gm) compared to long-channel devices, owing to the higher electric field for short-channel devices at the gate edge, (2) standard devices exhibit a more stable threshold voltage than that of low-VT power devices, since the TiN barrier layer prevents Al atom diffusion into the HfO2 layer, and (3) the transconductance efficiency of standard devices is better than that of low-VT power devices. Further, the lower-VT devices show lower transconductance degradation than standard devices. However, the transconductance degradation of the long-channel standard and low-VT devices are the same. Compared to short-channel low-VT devices, extended-channel standard devices are more immune to the HCI effect. © 2022, The Minerals, Metals & Materials Society.

关键词： Threshold voltage

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