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CuAg(SO4)2: A doubly strongly correlated altermagnetic three-dimensional analog of the parent compounds of high-Tc cuprates

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Physical Review B 2024年第22期109卷 L220412-L220412页

作者： Harald O. Jeschke Makoto Shimizu Igor I. Mazin Research Institute for Interdisciplinary Science Department of Physics Graduate School of Science Department of Physics and Astronomy and Quantum Science and Engineering Center

The discovery of high-temperature superconductivity (HTSC) in strongly correlated cuprates opened a new chapter in condensed matter physics, breaking existing stereotypes of what is a material base for a good superconductor (“Matthias rules”), at the same time emphasizing the richness and challenge of strongly correlated physics, personified by the most strongly correlated 3d ion, Cu2+. A recently reported new compound, CuAg(SO4)2, combines in a fascinating way the same ion with the most strongly correlated 4d one, Ag2+. In this Letter, we present a detailed analysis of electronic and magnetic properties of this material, and show that it is very different from the HTSC cuprates in several different ways, and opens a door into further research of superconductivity and magnetism, in particular altermagnetism, in strongly correlated materials.

关键词： Electronic structure Magnetic interactions Magnetic order First-principles calculations Monte Carlo methods

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Edge Breakdown Suppression in Avalanche Photodiodes Using an Attached Step Guard Ring

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IEEE Transactions on Electron Devices 2024年第5期71卷 3062-3068页

作者： Chen, Chi-En Prechatavanich, Natchanon Liu, Te-Hua Wu, Chao-Hsing National Taiwan University Graduate School of Advanced Technology Center for Quantum Science and Engineering Taipei106319 Taiwan Graduate Institute of Electronics Engineering Center for Quantum Science and Engineering Graduate Institute of Photonics and Optoelectronics Graduate School of Advanced Technology National Taiwan University Taipei106319 Taiwan

This study aims to investigate the effectiveness of different guard ring (GR) structures in suppressing edge breakdown issues in InGaAs/InP planar avalanche photodiodes (APDs) with a thicker multiplication layer design through highly realistic simulations. Based on the simulation results of the limitations of conventional GR structures, we introduce a novel concept known as attached step GRs (ASGR). Through this feasible diffusion structure, edge breakdown has been improved, with a 23% increase in breakdown voltage compared to traditional structures. The higher electric field is effectively confined within the central region of the multiplication region, while also achieving a threefold increase in current gain and quantum efficiency (QE) enhancement of over 20%. © 1963-2012 IEEE.

关键词： Electric breakdown

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High-Power and Low RIN Performance of a 1.55 μm DFB Laser for 10 Gb/s Satellite Optical Links

IEEE Electron Device Letters

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IEEE Electron Device Letters 2024年第3期45卷 428-431页

作者： Liu, Te-Hua Yang, Sung-Pu Yang, Yun-Cheng Wu, Chao-Hsin National Taiwan University Graduate School of Advanced Technology Center for Quantum Science and Engineering Taipei106319 Taiwan Graduate Institute of Photonics and Optoelectronics National Taiwan University Taipei106319 Taiwan Graduate Institute of Electronics Engineering National Taiwan University Taipei106319 Taiwan Graduate Institute of Electronics Engineering Graduate Institute of Photonics and Optoelectronics National Taiwan University Graduate School of Advanced Technology Center for Quantum Science and Engineering Taipei106319 Taiwan

In this letter, we present a 1.55-μ m DFB laser that possesses characteristics including high power, low noise, and high-speed direct modulation capabilities across a wide temperature range. The DFB laser demonstrates an optical power of 125.76-mW and sustains power exceeding 45-mW, with an SMSR surpassing 45-dB at 85 °C. It exhibits the ability to modulate signals at frequencies exceeding 5.26-GHz and transmits a clear 10-Gb/s eye pattern. The RIN maintains as low as -153.51-dB/Hz within the dynamic range of 0 10-GHz, and even with the operating temperature increases, it still stays impressively low at - 141.47-dB/Hz. Consequently, these outcomes indicate the 1.55-μ m DFB laser offers several advantages, reinforcing its potential as a promising device for satellite optical links. © 1980-2012 IEEE.

关键词： Optical fiber communication

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Single-Channel 106.25 Gb/s PAM-4 and 64 Gb/s NRZ Transmission With a 33.4-GHz 850-nm VCSEL With low-RIN Characteristics

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Journal of Lightwave Technology 2024年第1期42卷 293-301页

作者： Yang, Yun-Cheng Cheng, Hao-Tien Wu, Chao-Hsin National Taiwan University Graduate Institute of Electronics Engineering Center for Quantum Science and Engineering Taipei106319 Taiwan National Taiwan University Graduate Institute of Photonics and Optoelectronics Graduate School of Advanced Technology Taipei106319 Taiwan

We report on a high-performance oxide-confined 850-nm vertical-cavity surface-emitting laser (VCSEL) believed to have the highest modulation bandwidth at low bias currents for datacenter applications. This article has extensively discussed the device's characteristics, including static performance, optical spectra, small-signal response, relative intensity noise (RIN), and large-signal performance. The VCSEL with an oxide aperture of 4 μm delivers a 3.7 mW optical power, low spectral width, below -150 dB/Hz VCSEL RIN, and a breakthrough 33.4 GHz frequency response at room temperature (25 °C). Designed for high-performance short-reach communication networks and telecommunication applications, this high-speed 850-nm VCSEL supports data rates of up to 64 Gb/s non-return-to-zero (NRZ) and 106.25 Gb/s (53.125 Gbaud) 4-level pulse amplitude modulation (PAM-4) in multi-mode fiber (MMF) without the need for feed-forward equalization (FFE), decision feedback equalizer (DFE), or any offline digital signal processing (DSP). © 1983-2012 IEEE.

关键词： Surface emitting lasers

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Single-Mode-VCSEL With a Ring-Shaped Self-Aligned Recessed Metal Mode Filter

IEEE Electron Device Letters

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IEEE Electron Device Letters 2023年第8期44卷 1316-1319页

作者： Cheng, Hao-Tien Min, Szu-Yu Yang, Yun-Cheng Lin, Han-Yu Pan, Jian-Syun Wu, Chao-Hsin Graduate Institute of Electronics Engineering and the Center for Quantum Science and Engineering National Taiwan University Taipei106319 Taiwan Graduate Institute of Photonics and Optoelectronics National Taiwan University Taipei106319 Taiwan Graduate Institute of Electronics Engineering The Center for Quantum Science and Engineering The Graduate Institute of Photonics and Optoelectronics The Graduate School of Advanced Technology National Taiwan University Taipei106319 Taiwan

This letter presents a single-mode vertical-cavity surface-emitting laser (VCSEL) using a novel ring-shaped self-aligned recessed metal (SARM) mode filter on the emitting window as a means of transverse mode control. The SARM structure acts as a spatial filter to suppress the higher-order transverse modes through selective recessed-etching of the top mirror and the self-aligned deposition of the p-type contact metals for cavity tuning and blocking the higher-order modes. The SARM mode filter could be a potentially high-yield alternative technique for the mass production of single-mode VCSELs, demonstrating a single-mode emission with 1.55-mW power and a 30.7-dB side mode suppression ratio. © 1980-2012 IEEE.

关键词： Surface emitting lasers

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Temperature-Insensitive 850-nm Dual-Mode-VCSEL with 25.1-GHz Bandwidth at 85 °c

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Journal of Lightwave Technology 2023年第17期41卷 5675-5687页

作者： Cheng, Hao-Tien Yang, Yun-Cheng Wu, Chao-Hsin National Taiwan University Graduate Institute of Electronics Engineering The Center for Quantum Science and Engineering Taipei106319 Taiwan National Taiwan University Graduate Institute of Photonics and Optoelectronics The Graduate School of Advanced Technology Taipei106319 Taiwan

The detuning between the spectral positions of gain peaks and cavity resonances greatly influences the elevated temperature performances of vertical-cavity surface-emitting lasers (VCSELs). Therefore, the design and optimization of gain-cavity detuning in VCSELs have long been piquing researchers' interest. This work presents an 850-nm dual-mode-VCSEL meticulously designed with qualified higher-temperature performances in mind. Bringing enhanced functionalities over extended operating temperatures, delivering 3-dB bandwidths of 27.5 GHz at 25 °C, 26.7 GHz at 65 °C, and reaching a believed to be record-breaking 85 °C bandwidth of 25.1 GHz. The 2.4-GHz bandwidth decline with the temperature rise (25 °C to 85 °C) is considerably less impaired than in prior studies. The junction temperatures and cavity lifetimes at different temperatures are extracted by fitting spectra and microwave measurements. Lastly, we summarize and discuss the critical design features and the possible future prospectives of modern high-performance uncooled datacom VCSELs with temperature-insensitive performances. © 1983-2012 IEEE.

关键词： Surface emitting lasers

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High Temperature Tolerant Ge-on-Si Single Photon Avalanche Diode at the Communication Wavelength

IEEE Electron Device Letters

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IEEE Electron Device Letters 2024年第8期45卷 1413-1416页

作者： Chen, Chi-En Huang, Shih-Min Wang, Tzu-Jui Hsu, Ming-Chieh Huang, Kuan-Chieh Wu, Jau-Yang Wu, Chao-Hsin National Taiwan University Graduate School of Advanced Technology The Center for Quantum Science and Engineering Taipei106319 Taiwan Taiwan Semiconductor Manufacturing Company Hsinchu300 Taiwan Yuan Ze University Department of Electrical Engineering Taoyuan32003 Taiwan National Taiwan University Graduate Institute of Electronics Engineering The Center for Quantum Science and Engineering The Graduate Institute of Photonics and Optoelectronics The Graduate School of Advanced Technology Taipei106319 Taiwan

We present a practical design concept to reduce the noise of Ge-on-Si single photon avalanche diodes to improve temperature operation. In this letter, three different values of barrier height design have been investig... 详细信息

关键词： Photons

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53.125 Gbps PAM-4 transmission up to 75°C using 940-nm VCSELs on 330 µm Ge substrates for datacom applications 29

53.125 Gbps PAM-4 transmission up to 75°C using 940-nm VCSE...

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Vertical-Cavity Surface-Emitting Lasers XXIX 2025

作者： Yang, Yun-Cheng Wang, Zeyu Chiu, Chih-Chuan Liu, I-Chi Xia, Guangrui Wu, Chao-Hsin Graduate Institute of Electronics Engineering National Taiwan University Taiwan Center for Quantum Science and Engineering National Taiwan University Taiwan Department of Materials Engineering University of British Columbia Canada Graduate School of Advanced Technology National Taiwan University Taiwan

ISBN: (数字)9781510685178

ISBN: (纸本)9781510685161

In the past three decades, Gallium Arsenide (GaAs) wafers have served as the standard substrates for vertical-cavity surface-emitting lasers (VCSELs) emitting at infrared wavelengths. However, recent attention has shifted towards Germanium (Ge) substrates for long-wavelength VCSELs epitaxial growth. Ge substrates offer several significant advantages over traditional GaAs substrates, including more lattice matching to VCSEL’s distributed Bragg reflectors (DBRs), zero etch pit density (EPD), and reduced wafer bow and warp, which contribute to higher yield and reliability in VCSEL mass production. This study presents the fabrication and characterization of 940 nm high-speed oxide-confined VCSELs on 330 µm Ge substrates. The VCSELs achieve a maximum small-signal modulation bandwidth exceeding 17.5 GHz at temperatures up to 75°C. Furthermore, the Ge-based VCSELs enable successful 53.125 Gbps data transmission at both 25°C and 75°C, with transmitter dispersion and eye closure quaternary (TDECQ) penalties of 1.36 dB and 2.8 dB, respectively. © 2025 SPIE.

关键词： Gallium arsenide

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An emerging quaternary semiconductor nanoribbon with gate-tunable anisotropic conductance

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science Bulletin 2024年第20期69卷 3228-3236页

作者： Shaolong Jiang Fuchen Hou Shengfeng Zeng Yubo Zhang Erding Zhao Yilin Sun Liyun Zhao Cheng Zhang Mengyuan Jia Jun-Feng Dai Mingyuan Huang Qing Zhang Xiaolong Zou Yanfeng Zhang Junhao Lin Department of Physics Southern University of Science and TechnologyShenzhen 518055China Quantum Science Center of Guangdong-Hong Kong-Macao Greater Bay Area(Guangdong) Shenzhen 518045China Shenzhen Geim Graphene Center Institue of Materials ResearchTsinghua Shenzhen International Graduate SchoolTsinghua UniversityShenzhen 518055China Minjiang Collaborative Center for Theoretical Physics College of Physics and Electronic Information EngineeringMinjiang UniversityFuzhou 350108China School of Integrated Circuits and Electronics Beijing Institute of TechnologyBeijing 100081China School of Materials Science and Engineering Peking UniversityBeijing 100871China Shenzhen Institute for Quantum Science and Engineering Southern University of Science and TechnologyShenzhen 518055China

Two-dimensional noble transition metal chalcogenide(NTMC)semiconductors represent compelling building blocks for fabricating flexible electronic and optoelectronic *** binary and ternary compounds have been reported,the existence of quaternary NTMCs with a greater elemental degree of freedom remains largely *** study presents the pioneering experimental realization of a novel semiconducting quaternary NTMC material,AuPdNaS_(2),synthesized directly on Au foils through chemical vapor *** ribbon-shaped morphology of the AuPdNaS_(2)crystal can be finely tuned to a thickness as low as 9.2 *** transmission electron microscopy reveals the atomic arrangement,showcasing robust anisotropic features;thus,AuPdNaS_(2)exhibits distinct anisotropic phonon vibrations and electrical *** field-effect transistor constructed from AuPdNaS_(2)crystal demonstrates a pronounced anisotropic conductance(σ_(max)/σ_(min)=3.20)under gate voltage *** investigation significantly expands the repertoire of NTMC materials and underscores the potential applications of AuPdNaS_(2)in nano-electronic devices.

关键词： AuPdNaS_(2) Chemical vapor deposition Gate tenability Anisotropic conductance

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Error Exponent and Strong Converse for quantum Soft Covering

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IEEE Transactions on Information Theory 2024年第5期70卷 3499-3511页

作者： Cheng, Hao-Chung Gao, Li The Graduate Institute of Communication Engineering The Institute of Applied Mathematical Sciences National Taiwan University Center for Quantum Science and Engineering The Department of Electrical Engineering The Department of Mathematics Taipei10617 Taiwan National Center for Theoretical Sciences Physics Division Taipei10617 Taiwan Quantum Computing Center New Taipei City236 Taiwan University of Houston Department of Mathematics HoustonTX77204 United States

How well can we approximate a quantum channel output state using a random codebook with a certain size? In this work, we study the quantum soft covering problem, which uses a pairwise-independent random codebook to approximate the target output state of a quantum channel. We establish a one-shot error exponent bound and a one-shot strong converse bound on the approximation error measured in terms of the expected trace distance between the codebook-induced state and the true channel output state. When using independent and identically-distributed random codebook with a rate above the quantum mutual information I(X:B)ρ , we prove that the error decays exponentially with its error exponent expressed by the sandwiched Rényi information. On the other hand, when the rate of the codebook size is below the quantum mutual information, the error converges to one exponentially fast. Similar results are obtained using a random constant composition codebook, whereas the sandwiched Augustin information gives the error exponent. In addition to the above large deviation analysis, our results also hold in the moderate deviation regime. © 1963-2012 IEEE.

关键词： Signal encoding

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