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Unravelling the strong interplay for interfacial magnetic switching in metal-organic-based spintronics

Journal of Materials Chemistry C 2024年第11期12卷 3931-3942页

作者： Chen, Wan-Ting Yu, Li-Chung Lin, Jiu-Hua Cheng, Su Ling Shiu, Hung Wei Lai, Yu-Ling Chu, Ying-Hao Chin, Yi-Ying Wang, Jeng-Han Hsu, Yao-Jane National Synchrotron Radiation Research Center Hsinchu30076 Taiwan Graduate Program for Science and Technology of Accelerator Light Sources National Yang Ming Chiao Tung University Hsinchu30076 Taiwan Department of Materials Science and Engineering National Tsing Hua University Hsinchu30013 Taiwan Department of Chemistry National Taiwan Normal University Taipei11677 Taiwan Department of Photonics National Cheng Kung University Tainan70101 Taiwan Department of Physics National Chung Cheng University Chiayi62102 Taiwan

Organic semiconductors are promising building blocks for multifunctional spintronics. The spinterface plays a key role in affecting the magnetic properties of the performance of spin-based devices. Herein, we reveal the strong interfacial interplay affecting the magnetic switching at the interface of the synthetic paramagnetic tris(8-hydroxyquinoline)iron(iii) (Feq3) layer on the ferromagnetic surface. In combination with synchrotron-based analysis and density functional theory (DFT) calculations, we observed that the robust magnetic interactions of the Co/Feq3 system were strongly influenced by the interfacial reaction between Co and Feq3. As the charge transferred from the contacted Co to Feq3, the central iron was reduced from Fe(iii) to Fe(ii) and hybridized with the 8-hydroxyquinoline, causing spin polarization at the interface. The reduced central Fe(ii) exhibited apparent ferromagnetic ordering after contact with the ferromagnetic Co substrate. With increasing the Feq3 layer thickness, the central Fe reverted to its original Fe(iii) state, resulting in the disappearance of ferromagnetic ordering. The thickness dependence of the Feq3 layer on the magnetic response could be used to tune the spinterface properties and thus the interfacial magnetic interplay. These findings reveal the effect of the strong interfacial redox on the spinterface and open up a promising approach for the use of metal-organic materials in oragnic spintronic devices. © 2024 The Royal Society of Chemistry.

关键词： Organometallics

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X-ray microscopy and spectroscopy insights of organic spin-valve

X-ray microscopy and spectroscopy insights of organic spin-v...

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International Conference on Magnetics (INTERMAG)

作者： D. Wei P. Cheng Graduate Program for Science and Technology of Synchrotron Light Source National Tsing Hua University Hsinchu Taiwan Research Division National Synchrotron Radiation Research Center Hsinchu Taiwan

One recent focus in spintronics is the observation of giant magnetoresistance (GMR) in organic spin-valve (OSV). Sandwiched by two ferromagnetic (FM) layers, organic semiconductor (OSC) was incorporated into the spin-valve structure to take advantage of its low spin-orbit interaction so that the coherence of spin-polarized carriers can be preserved over an extended time. The observation of GMR in OSV is thus a promising result suggesting spins have indeed travelled through OSC. However, until now, the magnetoresistance (MR) ratio given by OSV remains to be relatively low and highly sensitive to temperature. Obviously, our understanding on OSV is far from complete, and there are unidentified effects hindering the transport of spins in OSV. In this report, we present the experimental evidences suggesting that the absence of room temperature GMR in OSV may be related to the diffusion of metal clusters from metallic top electrode into OSC layer. Our findings also offer a plausible explanation on why inserting an oxide layer between OSC and FM electrode can improve the MR ratio of OSV.

关键词： Frequency modulation Electrodes Temperature sensors Metals Magnetic films Magnetic resonance imaging

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Exciton Localization of High-Quality ZnO/Mg_xZn_1-xO Multiple Quantum Wells on Si (111) with a Y₂O₃ Buffer Layer (vol 1, pg 3829, 2018)

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ACS APPLIED NANO MATERIALS 2018年第10期1卷 5958-5958页

作者： Liu, Wei-Rein Huang, Wei-Lun Wu, Yung-Chi Lai, Liang-Hsun Hsu, Chia-Hung Hsieh, Wen-Feng Chiang, Tsung-Hung Wan, H. W. Hong, M. Kao, J. National Synchrotron Radiation Research Center Hsinchu 30076 Taiwan Program for Science and Technology of Accelerator Light Source National Chiao Tung University Hsinchu 30010 Taiwan Department of Photonics College of Electrical and Computer Engineering National Chiao Tung University Hsinchu 30010 Taiwan Department of Photonics College of Electrical and Computer Engineering National Chiao Tung University Hsinchu 30010 Taiwan Department of Materials Science & Engineering National Tsing Hua University Hsinchu 30013 Taiwan Graduate Institute of Applied Physics and Department of Physics National Taiwan University Taipei 10617 Taiwan Department of Physics National Tsing Hua University Hsinchu 30013 Taiwan

We report the structural and optical properties of ten-period ZnO/MgxZn1–xO multiple quantum wells (MQWs) prepared on the most widely used semiconductor material, Si. The introduction of a nanometer thick high-k Y2O3transition layer between Si (111) substrate and a ZnO buffer layer significantly improves the structural perfection of the MQWs grown on top of it. The high structural quality of the ZnO/MgxZn1–xO MQWs is evidenced by the appearance of pronounced high order satellite peaks in X-ray crystal truncation rods; high resolution cross-sectional transmission electron microscopy images also confirmed the regularly arranged well and barrier layers. When the well width is less than ∼2.7 nm, the quantum-confined Stark effect in MQWs can be negligible. Not only the increasing exciton-binding energy but also reducing exciton–phonon coupling determined in temperature-dependent photoluminescence spectra indicate quantum-size effect. Our results demonstrate that ZnO/MgxZn1–xO MQWs integrated on Si have great potential in UV optoelectronic device applications.

关键词： Excitons Phonons Oxides Binding energy Layers

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A low temperature inkjet printing and filling process for low resistive silver TSV fabrication in a SU-8 substrate

A low temperature inkjet printing and filling process for lo...

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IEEE International Conference on Micro Electro Mechanical Systems

作者： Tsung-Han Yang Zi-Li Guo Yu-Min Fu Yu-Ting Cheng Yen-Fang Song Pu-Wei Wu Department of Electronics Engineering National Chiao Tung University Hsinchu Taiwan Program of Science and Technology of Accelerator Light Source National Chiao Tung University and National Synchrotron Radiation Research Center Hsinchu Taiwan

ISBN: (纸本)9781509050796

The paper presents a low temperature (with 60 °C) inkjet printing and filling process to realize low resistive Ag TSV (Through Substrate Vias) with the aspect ratio of via depth vs. diameter from 2 to 5 in a SU-8 substrate potential for flexible microsystem packaging applications. Combining humidity control and layer-by-layer Ag mirror reaction, the proposed process technology can accomplish a fully filled TSV with the lowest electrical resistivity of ~450 μΩ·cm in comparison with the prior printing and filling technologies.

关键词： Through-silicon vias Filling Substrates Printing Mirrors Resistance Ink

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Generation and Applications of Femtosecond X-Rays from the Advanced light source

Generation and Applications of Femtosecond X-Rays from the A...

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Nonlinear Optics: Materials, Fundamentals and Applications, NLO 2002

作者： Schoenlein, R.W. Cavalleri, A. Chong, H.H.W. Glover, T.E. Heimann, P.A. Shank, C.V. Zholents, A.A. Zolotorev, M.S. Materials Sciences Division Ernest Orlando Lawrence Berkeley National Laboratory 1 Cyclotron Rd. MS: 2-300 BerkeleyCA94720 United States Applied Science and Technology Graduate Group University of California Berkeley BerkeleyCA94720 United States Advanced Light Source Division Lawrence Berkeley National Laboratory United States Accelerator and Fusion Research Division Lawrence Berkeley National Laboratory United States

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Preparation of carbon nanotube ink via organic hydrazine treatment

Preparation of carbon nanotube ink via organic hydrazine tre...

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International Microsystems, Packaging, Assembly and Circuits technology (IMPACT)

作者： Li-Hung Liu Jhih-Syuan Teng Yao-Jane Hsu Pen-Cheng Wang Department of Engineering and System Science National Tsing Hua University Hsinchu Taiwan Graduate Program for Science and Technology of Synchrotron Light Source National Tsing Hua University Hsinchu Taiwan National Synchrotron Radiation Research Center Hsinchu Taiwan

ISBN: (纸本)9781479977284

In this study, we used four different hydrazines to react with CNTs to prepare CNT-based inks. We found that the ink with CNTs subjected to the 2,4-dinitrophenylhydrazine treatment exhibited much better dispersion property than the inks with CNTs treated with other organic hydrazines. In other words, within 3 days, all ink dispersions began to bundle and precipitate after the sample vials were left on the bench top in our lab, except the sample with CNTs treated with 2,4-dinitrophenylhydrazine. Most importantly, the ink sample with CNTs treated with 2,4-dinitrophenylhydrazine were still well dispersed even after the sample vial was left on the bench top for 6 months.

关键词： Carbon nanotubes Ink Dispersion Chemicals Surface treatment Films

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Optimizing the conditions for carbon nanotube growth on silicon wafers coated with nickel thin films

Optimizing the conditions for carbon nanotube growth on sili...

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International Microsystems, Packaging, Assembly and Circuits technology (IMPACT)

作者： Jhih-Syuan Teng Wei-Jie Chen Chuen-Horng Tsai Yao-Jane Hsu Pen-Cheng Wang Graduate Program for Science and Technology of Synchrotron Light Source National Tsing Hua University Hsinchu Taiwan National Synchrotron Radiation Research Center Hsinchu Taiwan Department of Engineering and System Science National Tsing Hua University Hsinchu Taiwan

In this work, the preparative conditions for optimizing growing carbon nanotube thin films on silicon wafers using an in-house chemical vapor deposition system was evaluated. We found that, when acetylene was used as the carbon source and nickel as the catalyst, the amount of carbon nanotubes grown on the silicon wafers was increased when the growth temperature was decreased from 800°C to 600°C. The carbon nanotubes were then characterized by Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM) and tunneling electron microscopy (TEM). The results show the obtained carbon nanotube thin films were mainly composed of multi-walled carbon nanotubes.

关键词： Carbon nanotubes Substrates Silicon Carbon Nickel Films

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A Robust Bendable Irox Thin Film Via Mild Alkaline Solution Process for Neuron Stimulating Electrodes

SSRN

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SSRN 2023年

作者： Tso, Kuang-Chih Chan, Tzu-Ying Yu, Tsung-Chun Pan, Shih-Chin Chu, Chao-Yi Chen, San-Yuan Lee, Jyh-Fu Ohta, Jun Wu, Pu-Wei Chen, Po-Chun Graduate Program of Accelerator Light Source National Yang Ming Chiao Tung University Hsinchu300 Taiwan Division of Materials Science Graduate School of Science and Technology Nara Institute of Science Technology Takayama Ikoma Nara8916-5 Japan Department of Materials Science and Engineering National Yang Ming Chiao Tung University Hsinchu300 Taiwan Institute of Materials Science and Engineering National Taipei University of Technology Taipei106 Taiwan National Synchrotron Radiation Research Center Hsinchu300 Taiwan

We demonstrate a unique chemical formula to deposit hydrous iridium oxide thin film on a platinum-coated polyimide substrate. In a mild alkaline solution, the iridium (III) precursor undergoes the ligand exchange and hydrolysis reaction to become the iridium (III) dimers that are physically adsorbed on the substrate for subsequent heterogeneous condensation and growth of amorphous hydrous iridium oxide thin film. Both UV-Vis and X-ray absorption spectroscopy (XAS) are employed to determine the reaction steps involved. The chemical nature and crystallinity of the hydrous iridium oxide thin film are investigated by XAS, X-ray photon spectroscopy, and X-ray diffraction. The hydrous iridium oxide thin film reveals an impressive normalized charge storage capacity (CSC) of 0.3 mC/cm2-nm and a low impedance (80.5 Ω) at 1k Hz. In addition, in bending test of 3,000 cycles, the hydrous iridium oxide thin film retains 91.2% of its initial normalized CSC without any physical crack and delamination. The cell viability test suggests negligible bio-toxicity. Our results provide a solid evidence of fabricating a robust flexible electrode for neural interfaces for potential use in implantable electronic devices. © 2023, The Authors. All rights reserved.

关键词： Iridium compounds

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Ultrafast X-ray science at the advanced light source

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Synchrotron Radiation News 2001年第1期14卷 20-27页

作者： Schoenlein, R.W. Chin, A.H. Chong, H.H.W. Falcone, R.W. Glover, T.E. Heimann, P.A. Johnson, S.L. Lindenberg, A.M. Shank, C.V. Zholents, A.A. Zolotorev, M.S. Materials Sciences Division Lawrence Berkeley National Laboratory Berkeley CA 94720 United States Department of Physics University of California Berkeley CA 94720 United States Applied Science and Technology Graduate Group University of California Berkeley CA 94720 United States Lawrence Berkeley National Laboratory Advanced Light Source Berkeley CA 94720 United States Accelerator and Fusion Research Division Lawrence Berkeley National Laboratory Berkeley CA 94720 United States Lawrence Livermore National Laboratory United States

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Depth Dependence of the Photoelectron Emission Profile for Cathode Lens Microscopy

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Microscopy and Microanalysis 2018年第S2期24卷 154-155页

作者： Huang, Yen Chuang, Tzu-Hung Lu, Chun-I Huang, Chih-Heng Lin, Deng-Sung Kuo, Chien-Chen Wei, Der-Hsin Graduate Program of Science and Technology of Synchrotron Light Source National Tsing Hua University Hsinchu Taiwan National Synchrotron Radiation Research Center Hsinchu Taiwan Program of Synchrotron Radiation and Neutron Beam Applications National Sun Yat-sen University Kaohsiung Taiwan Department of Physics National Tsing Hua University Hsinchu Taiwan

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