PdCrO2 is material which has attracted interest due to the coexistence of metallic conductivity associated with itinerant Pd 4d electrons and antiferromagnetic order arising from localized Cr spins. A central issue is...
PdCrO2 is material which has attracted interest due to the coexistence of metallic conductivity associated with itinerant Pd 4d electrons and antiferromagnetic order arising from localized Cr spins. A central issue is determining to what extent the magnetic order couples to the conduction electrons. Here we perform angle-resolved photoemission spectroscopy (ARPES) to experimentally characterize the electronic structure. We find that the Fermi surface has contributions from both bulk and surface states, which can be experimentally distinguished and theoretically verified by slab band structure calculations. The bulk Fermi surface shows no signature of electronic reconstruction in the antiferromagnetic state. This observation suggests that there is negligible interaction between the localized Cr spin structure and the itinerant Pd electrons measured by ARPES.
Temperature and pressure dependences of the electronic structure of the heavy-fermion system CePd2Si2 have been investigated using partial fluorescence yield x-ray absorption spectroscopy and resonant x-ray emission s...
Temperature and pressure dependences of the electronic structure of the heavy-fermion system CePd2Si2 have been investigated using partial fluorescence yield x-ray absorption spectroscopy and resonant x-ray emission spectroscopy at the Ce L3 edge. The temperature dependence has also been measured for CeRh2Si2 for comparison. In both compounds Ce is in a weakly mixed valence state at ambient pressure, mostly f1 with a small contribution from the f0 component. No temperature dependence of the Ce valence is observed at temperatures as low as 8 K. In CePd2Si2 at 19 K, however, the Ce valence shows a continuous increase with pressure, indicating pressure-induced delocalization of the 4f states. Theoretical calculations based on the single impurity Anderson model reproduce the experimental results well. Pressure dependence of the difference between the ground state valence and the measured valence including the final state effect is also discussed.
BiFeO3 (BFO) films were grown on LaNiO3-coated Si substrate by a RF magnetron sputtering system at temperatures in the range of 300-700 °C. X-ray reflectivity and high-resolution diffraction measurements were emp...
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In order to clarify many-body interactions in ferromagnetic iron, we performed high-resolution angle-resolved photoemission spectroscopy (ARPES) on a Fe(110) single crystal. We quantitatively analyzed the ARPES line s...
In order to clarify many-body interactions in ferromagnetic iron, we performed high-resolution angle-resolved photoemission spectroscopy (ARPES) on a Fe(110) single crystal. We quantitatively analyzed the ARPES line shapes for a majority-spin band crossing the Fermi level (EF). The observed group velocity was reduced with respect to the band-structure calculation by a factor of 1/2.7, giving a coupling parameter due to the electron-electron interaction of λee=1.7±0.1. This suggests a strong electron correlation in Fe 3d, which is consistent with recent high-resolution ARPES results. The real and imaginary parts of the self-energy have been experimentally evaluated near EF. The coupling parameter of the electron-phonon interaction was estimated to be λep=0.16±0.02, which is 1/10 of λee. The effective-mass enhancement with respect to the band mass m∗/mb∼1+λee+λep∼3 was, therefore, mainly caused by electron correlation.
Low energy ultrahigh momentum resolution angle resolved photoemission spectroscopy study on four-layer self-doped high Tc superconductor Ba2Ca3Cu4O8F2 (F0234) revealed fine structure in the band dispersion, identifyin...
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Low energy ultrahigh momentum resolution angle resolved photoemission spectroscopy study on four-layer self-doped high Tc superconductor Ba2Ca3Cu4O8F2 (F0234) revealed fine structure in the band dispersion, identifying the unconventional association of hole and electron doping with the inner and outer CuO2 layers, respectively. For the states originating from two inequivalent CuO2 layers, different energy scales are observed in dispersion kinks associated with the collective mode coupling, with the larger energy scale found in the electron (n-) doped state which also has stronger coupling strength. Given the earlier finding that the superconducting gap is substantially larger along the n-type Fermi surface, our observations connect the mode coupling energy and strength with magnitude of the pairing gap.
Femtosecond time-resolved small and wide angle x-ray diffuse scattering techniques are applied to investigate the ultrafast nucleation processes that occur during the ablation process in semiconducting materials. Foll...
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Femtosecond time-resolved small and wide angle x-ray diffuse scattering techniques are applied to investigate the ultrafast nucleation processes that occur during the ablation process in semiconducting materials. Following intense optical excitation, a transient liquid state of high compressibility characterized by large-amplitude density fluctuations is observed and the buildup of these fluctuations is measured in real time. Small-angle scattering measurements reveal snapshots of the spontaneous nucleation of nanoscale voids within a metastable liquid and support theoretical predictions of the ablation process.
The ultrafast decay of the x-ray diffraction intensity following laser excitation of an InSb crystal has been utilized to observe carrier dependent changes in the potential energy surface. For the first time, an abrup...
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The ultrafast decay of the x-ray diffraction intensity following laser excitation of an InSb crystal has been utilized to observe carrier dependent changes in the potential energy surface. For the first time, an abrupt carrier dependent onset for potential energy surface softening and the appearance of accelerated atomic disordering for a very high average carrier density have been observed. Inertial dynamics dominate the early stages of crystal disordering for a wide range of carrier densities between the onset of crystal softening and the appearance of accelerated atomic disordering.
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