检索结果-内蒙古大学图书馆

Frontispiece: The Electrophilicity of Surface Carbon Species in the Redox Reactions of CuO-CeO2Catalysts

Angewandte Chemie International Edition 2021年第26期60卷

作者： Liqun Kang Dr. Bolun Wang Dr. Andreas T. Güntner Siyuan Xu Xuhao Wan Yiyun Liu Sushila Marlow Yifei Ren Dr. Diego Gianolio Dr. Chiu C. Tang Dr. Vadim Murzin Dr. Hiroyuki Asakura Dr. Qian He Dr. Shaoliang Guan Dr. Juan J. Velasco-Vélez Prof. Sotiris E. Pratsinis Dr. Yuzheng Guo Dr. Feng Ryan Wang Department of Chemical Engineering University College London London WC1E 7JE UK Particle Technology Laboratory Institute of Process Engineering Department of Mechanical and Process Engineering ETH Zürich 8092 Zürich Switzerland School of Electrical Engineering and Automation Wuhan University Wuhan China Diamond Light Source Ltd Harwell Science and Innovation Campus Didcot Oxfordshire OX11 0DE UK Deutsches Elektronen Synchrotron DESY 22607 Hamburg Germany Department of Molecular Engineering Graduate School of Engineering Kyoto University Kyotodaigaku Katsura Nishikyo-ku Kyoto 6158510 Japan Department of Materials Science and Engineering National University of Singapore Singapore 117575 Singapore HarwellXPS—The EPSRC National Facility for Photoelectron Spectroscopy Research Complex at Harwell (RCaH) Didcot OX11 0FA UK Fritz-Haber-Institut der Max-Planck-Gesellschaft Faradayweg 4–6 14195 Berlin Germany

来源：评论

学校读者我要写书评

暂无评论

Publisher Correction: A weak topological insulator state in quasi-one-dimensional bismuth iodide

引用

Nature 2020年第7819期584卷 E4页

作者： Ryo Noguchi T Takahashi K Kuroda M Ochi T Shirasawa M Sakano C Bareille M Nakayama M D Watson K Yaji A Harasawa H Iwasawa P Dudin T K Kim M Hoesch V Kandyba A Giampietri A Barinov S Shin R Arita T Sasagawa Takeshi Kondo Institute for Solid State Physics University of Tokyo Kashiwa Japan. Materials and Structures Laboratory Tokyo Institute of Technology Yokohama Japan. Department of Physics Osaka University Toyonaka Japan. National Metrology Institute of Japan National Institute of Advanced Industrial Science and Technology Tsukuba Japan. Department of Applied Physics and Quantum-Phase Electronics Center (QPEC) The University of Tokyo Tokyo Japan. Diamond Light Source Harwell Campus Didcot UK. Graduate School of Science Hiroshima University Higashi-Hiroshima Japan. DESY Photon Science Deutsches Elektronen-Synchrotron Hamburg Germany. Elettra - Sincrotrone Trieste Basovizza Italy. RIKEN Center for Emergent Matter Science (CEMS) Wako Japan. Materials and Structures Laboratory Tokyo Institute of Technology Yokohama Japan. sasagawa@msl.titech.ac.jp. Institute for Solid State Physics University of Tokyo Kashiwa Japan. kondo1215@issp.u-tokyo.ac.jp.

An amendment to this paper has been published and can be accessed via a link at the top of the paper.

关键词：

来源：评论

学校读者我要写书评

暂无评论

Applications for ultimate spatial resolution in LASER based μ-ARPES: A FeSe case study

arXiv

引用

arXiv 2018年

作者： Schwier, E.F. Takita, H. Mansur, W. Ino, A. Hoesch, M. Watson, M.D. Haghighirad, A.A. Shimada, K. Hiroshima Synchrotron Radiation Center Hiroshima University 2-313 Kagamiyama Higashi-Hiroshima739-0046 Japan Graduate School of Science Hiroshima University 1-3-1 Kagamiyama Higashi-Hiroshima739-8526 Japan Diamond Light Source Harwell Campus DidcotOX11 0DE United Kingdom DESY Photon Science Deutsches Elektronen-Synchrotron HamburgD-22603 Germany Clarendon Laboratory Department of Physics University of Oxford Parks Road OxfordOX1 3PU United Kingdom Institute for Solid State Physics Karlsruhe Institute of Technology Karlsruhe76021 Germany

Combining Angle resolved photoelectron spectroscopy (ARPES) and a μ-focused Laser, we have performed scanning ARPES microscopy measurements of the domain population within the nematic phase of FeSe single crystals. We are able to demonstrate a variation of the domain population density on a scale of a few 10 μm while constraining the upper limit of the single domain size to less than 5 μm. This experiment serves as a demonstration of how combining the advantages of high resolution Laser ARPES and an ultimate control over the spatial dimension can improve investigations of materials by reducing the cross contamination of spectral features of different domains. Copyright © 2018, The Authors. All rights reserved.

关键词： Selenium compounds

来源：评论

学校读者我要写书评

暂无评论

A low temperature inkjet printing and filling process for low resistive silver TSV fabrication in a SU-8 substrate

A low temperature inkjet printing and filling process for lo...

引用

IEEE International Conference on Micro Electro Mechanical Systems

作者： Tsung-Han Yang Zi-Li Guo Yu-Min Fu Yu-Ting Cheng Yen-Fang Song Pu-Wei Wu Department of Electronics Engineering National Chiao Tung University Hsinchu Taiwan Program of Science and Technology of Accelerator Light Source National Chiao Tung University and National Synchrotron Radiation Research Center Hsinchu Taiwan

ISBN: (纸本)9781509050796

The paper presents a low temperature (with 60 °C) inkjet printing and filling process to realize low resistive Ag TSV (Through Substrate Vias) with the aspect ratio of via depth vs. diameter from 2 to 5 in a SU-8 substrate potential for flexible microsystem packaging applications. Combining humidity control and layer-by-layer Ag mirror reaction, the proposed process technology can accomplish a fully filled TSV with the lowest electrical resistivity of ~450 μΩ·cm in comparison with the prior printing and filling technologies.

关键词： Through-silicon vias Filling Substrates Printing Mirrors Resistance Ink

来源：评论

学校读者我要写书评

暂无评论

Cuprate Thin Films: Interfacial Oxygen‐Driven Charge Localization and Plasmon Excitation in Unconventional Superconductors (Adv. Mater. 34/2020)

引用

Advanced Materials 2020年第34期32卷

作者： Chi Sin Tang Xinmao Yin Shengwei Zeng Jing Wu Ming Yang Ping Yang Caozheng Diao Yuan Ping Feng Mark B. H. Breese Elbert E. M. Chia Thirumalai Venkatesan Manish Chhowalla Ariando Ariando Andrivo Rusydi Andrew T. S. Wee Department of Physics Faculty of Science National University of Singapore S12 Science Drive 3 Singapore 117551 Singapore NUS Graduate School for Integrative Sciences and Engineering National University of Singapore 21 Lower Kent Ridge Singapore 119077 Singapore Singapore Synchrotron Light Source National University of Singapore 5 Research Link Singapore 117603 Singapore NUSNNI‐NanoCore National University of Singapore Singapore 117411 Singapore Institute of Materials Research and Engineering A∗STAR (Agency for Science Technology and Research) 2 Fusionopolis Way Singapore 138634 Singapore Division of Physics and Applied Physics School of Physical and Mathematical Sciences Nanyang Technological University Singapore 637371 Singapore Department of Electrical and Computer Engineering National University of Singapore Singapore 117583 Singapore Department of Materials Science & Metallurgy University of Cambridge Cambridge CB3 0FS UK Centre for Advanced 2D Materials and Graphene Research Centre National University of Singapore Singapore 117546 Singapore

来源：评论

学校读者我要写书评

暂无评论

Mott variable range hopping and bad-metal in lightly doped spin-orbit Mott insulator BaIrO3

引用

Physical Review Materials 2018年第6期2卷 065003-065003页

作者： H. J. Harsan Ma P. Yang Z. S. Lim Ariando Low Dimensional Quantum Physics & Device Group State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology School of Microelectronics Xidian University 2 South Taibai Road Xi'an 710071 China Physikalisches Institut and Center for Quantum Science (CQ) in LISA+ Universität Tübingen Auf der Morgenstelle 14 D-72076 Tübingen Germany Singapore Synchrotron Light Source (SSLS) National University of Singapore 5 Research Link 117603 Singapore NUSNNI-Nanocore National University of Singapore 117411 Singapore Department of Physics National University of Singapore 117542 Singapore NUS Graduate School for Integrative Sciences and Engineering National University of Singapore 117456 Singapore

The Mott transition and the vicinity of a Mott insulating phase have constantly been a fertile ground for exploring exotic quantum states, most notably the high-Tc cuprates. The layered iridate represents another intriguing example. The nature of the Mott insulator phase and transition mechanism to a metallic state is still under debate. Much of the challenge originates from a series of energy scales involved in the electronics phases. Here, we report synthetization, characterization, and transport measurements on doped and undoped Ba1−xLaxIrO3 films grown on SrTiO3. The films are fully strained up to 70 nm thick and have a tetragonal lattice structure. For a doping level of x=0.1, a bad-metal state with linear temperature dependence of the resistivity beyond the Mott-Ioffe-Regel limit emerges in a wide temperature range down to a critical temperature Tc∼30K, below which the system shows Mott variable range hopping (Mott VRH) conduction behavior. The ground state is confirmed to be insulating by the Mobius criterion. A strong correlation between the bad-metal state and Mott VRH localized state is found as the slope of the linear resistivity is inversely proportional to film thickness and the size of the Mott VRH activation energy Δ is linearly proportional to Tc. We further show that upon doping the spin-orbit Mott insulator, itinerant metallic regions coexist with localized regions within a nanoscale phase-separated ground state with a small activation energy. Our results shed light on the nature of the metallic state and a crossover to a bad-metal phase for doping the spin-orbit Mott insulator.

关键词： Band gap Electronic structure Phase transitions

来源：评论

学校读者我要写书评

暂无评论

Lithium‐Ion Batteries: Cooling Induced Surface Reconstruction during Synthesis of High‐Ni Layered Oxides (Adv. Energy Mater. 43/2019)

引用

Advanced Energy Materials 2019年第43期9卷

作者： Ming‐Jian Zhang Xiaobing Hu Maofan Li Yandong Duan Luyi Yang Chong Yin Mingyuan Ge Xianghui Xiao Wah‐Keat Lee Jun Young Peter Ko Khalil Amine Zonghai Chen Yimei Zhu Eric Dooryhee Jianming Bai Feng Pan Feng Wang School of Advanced Materials Peking University Shenzhen Graduate School Shenzhen 518055 P. R. China Sustainable Energy Technologies Department Brookhaven National Laboratory Upton NY 11973 USA Condensed Matter Physics and Materials Science Department Brookhaven National Laboratory Upton NY 11973 USA School of Science Hebei University of Science and Technology Shijiazhuang 050018 P. R. China Ningbo Institute of Materials Technology and Engineering Chinese Academy of Sciences Ningbo 315201 P. R. China National Synchrotron Light Source II Brookhaven National Laboratory Upton NY 11973 USA The Cornell High Energy Synchrotron Source Cornell University Ithaca NY 14853 USA Electrochemical Technology Program Chemical Sciences and Engineering Division Argonne National Laboratory 9700 South Cass Avenue Lemont IL 60439 USA Materials Science and Engineering Stanford University Stanford CA 94305 USA Institute for Research and Medical Consultations (IRMC) Imam Abdulrahman Bin Faisal University (IAU) Dammam 34212 Saudi Arabia

来源：评论

学校读者我要写书评

暂无评论

Direct observation of anisotropic small-hole polarons in an orthorhombic structure of BiVO4 films

引用

Physical Review B 2018年第19期97卷 195150-195150页

作者： A. Chaudhuri L. Mandal X. Chi M. Yang M. C. Scott M. Motapothula X. J. Yu P. Yang Y. Shao-Horn T. Venkatesan A. T. S. Wee A. Rusydi NUSSNI-NanoCore National University of Singapore Singapore 117576 Singapore Singapore Synchrotron Light Source National University of Singapore 5 Research Link Singapore 117603 Singapore Department of Physics National University of Singapore Singapore 117542 Singapore Institute of Materials Research and Engineering A*STAR 2 Fusionopolis Way Singapore 138634 Singapore Centre for Advanced 2D Materials and Graphene Research Centre National University of Singapore Singapore 117546 Singapore Department of Materials Science and Engineering University of California Berkeley California 94720 USA Electrochemical Energy Laboratory Massachusetts Institute of Technology 77 Massachusetts Avenue Cambridge Massachusetts 02139 USA National University of Singapore Graduate School for Integrative Sciences and Engineering (NGS) 28 Medical Drive Singapore 117456 Singapore Department of Materials Science and Engineering National University of Singapore Singapore 117583 Singapore

Here, we report an anisotropic small-hole polaron in an orthorhombic structure of BiVO4 films grown by pulsed-laser deposition on yttrium-doped zirconium oxide substrate. The polaronic state and electronic structure of BiVO4 films are revealed using a combination of polarization-dependent x-ray absorption spectroscopy at VL3,2 edges, spectroscopic ellipsometry, x-ray photoemission spectroscopies, and high-resolution x-ray diffraction with the support of first-principles calculations. We find that in the orthorhombic phase, which is slightly different from the conventional pucherite structure, the unoccupied V 3d orbitals and charge inhomogeneities lead to an anisotropic small-hole polaron state. Our result shows the importance of the interplay of charge and lattice for the formation of a hole polaronic state, which has a significant impact in the electrical conductivity of BiVO4, hence its potential use as a photoanode for water splitting.

关键词： Polarons X-ray absorption spectroscopy X-ray diffraction X-ray photoelectron spectroscopy

来源：评论

学校读者我要写书评

暂无评论

A general route to form topologically-protected surface and bulk Dirac fermions along high-symmetry lines

arXiv

引用

arXiv 2019年

作者： Clark, O.J. Mazzola, F. Marković, I. Riley, J.M. Feng, J. Yang, B.-J. Sumida, K. Okuda, T. Fujii, J. Vobornik, I. Kim, T.K. Okawa, K. Sasagawa, T. Bahramy, M.S. King, P.D.C. SUPA School of Physics and Astronomy University of St. Andrews St. AndrewsKY16 9SS United Kingdom Max Planck Institute for Chemical Physics of Solids Nöthnitzer Straße 40 Dresden01187 Germany Diamond Light Source Harwell Campus DidcotOX11 0DE United Kingdom CAS SEID SIP 398 Ruoshui Road Suzhou215123 China Department of Physics and Astronomy Seoul National University Seoul08826 Korea Republic of Seoul08826 Korea Republic of Seoul National University Seoul08826 Korea Republic of Graduate School of Science Hiroshima University 1-3-1 Kagamiyama Higashi-Hiroshima739-8526 Japan Hiroshima Synchrotron Radiation Center Hiroshima University 2-313 Kagamiyama Higashi-Hiroshima739-0046 Japan -CNR Laboratorio TASCm in Area Science Park S.S.14 Km 163.5 TriesteI-34149 Italy Laboratory for Materials and Structures Tokyo Institute of Technology Kanagawa226-8503 Japan Quantum-Phase Electronics Center Department of Applied Physics University of Tokyo Tokyo113-8656 Japan Wako351-0198 Japan

The band inversions that generate the topologically non-trivial band gaps of topological insulators and the isolated Dirac touching points of three-dimensional Dirac semimetals generally arise from the crossings of electronic states derived from different orbital manifolds. Recently, the concept of single orbital-manifold band inversions occurring along high-symmetry lines has been demonstrated, stabilising multiple bulk and surface Dirac fermions. Here, we discuss the underlying ingredients necessary to achieve such phases, and discuss their existence within the family of transition metal dichalcogenides. We show how their three-dimensional band structures naturally produce only small kz projected band gaps, and demonstrate how these play a significant role in shaping the surface electronic structure of these materials. We demonstrate, through spin- and angle-resolved photoemission and density functional theory calculations, how the surface electronic structures of the group-X TMDs PtSe2 and PdTe2 are host to up to five distinct surface states, each with complex band dispersions and spin textures. Finally, we discuss how the origin of several recently-realised instances of topological phenomena in systems outside of the TMDs, including the iron-based superconductors, can be understood as a consequence of the same underlying mechanism driving kz-mediated band inversions in the TMDs. Copyright © 2019, The Authors. All rights reserved.

关键词： Energy gap

来源：评论

学校读者我要写书评

暂无评论

Properties of synchrotron radiation from segmented undulators based on a Wigner distribution function 7

Properties of synchrotron radiation from segmented undulator...

引用

7th International Particle Accelerator Conference, IPAC 2016

作者： Luo, H.W. Chung, T.Y. Lee, C.H. Hwang, C.S. Graduate Program in Science and Technology of Synchrotron Light Source National Tsing Hua University Hsinchu Taiwan National Synchrotron Radiation Research Center Hsinchu Taiwan Department of Engineering and System Science National Tsing Hua University Hsinchu Taiwan Department of Electrophysics National Chiao Tung University Hsinchu Taiwan

ISBN: (纸本)9783954501472

Three long straight sections with a double mini-βylattice were designed in Taiwan Photon source. For the purpose to understand whether the brilliance can be enhanced or not when two collinear undulators were installed in the double mini-βysection. The method of Wigner distribution function (WDF) is a natural way to describe a synchrotron radiation source. The brilliance is thereby calculable without a Gaussian approximation used in a conventional manner. Hence the WDF is developed to calculate the brilliance for the two collinear undulators in the double mini-βysection. Some important optical properties such as the degree of coherence can be directly calculated with this method. We use it as an example to investigate the properties of radiation from a segmented undulator. Copyright © 2016 CC-BY-3.0 and by the respective authors.

关键词：

来源：评论

学校读者我要写书评

暂无评论

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案：

请选择收藏分类：

通借通还

建议与咨询 留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案： 新增检索档案 确定 取消

请选择收藏分类： 新增自定义分类 确定 取消

通借通还

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

请选择保存的检索档案：

请选择收藏分类：