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International Conference on Power Energy, Environment and Intelligent Control (PEEIC)

作者： Vishakha D Bhandarkar Aruna Sri Rongali Mohamed Dawood Shamout Prof. Sachin Pund Gigih Forda Nama Shrishailappa Patil Applied Mathematics and Humanities Yeshwantrao Chavan College of Engineering India Graduate Doctoral Information Technology/Graduate (Information Technology Emphasis/Information Technology Ph.D.) University of The Cumberlands US Department of Management College of Business Administration University of Sharjah Sharjah United Arab Emirates Department of Industrial Engineering Shri Ramdeobaba College of Engineering and Management Nagpur Maharashtra India Department of Informatics Doctoral Program of Environtmental Science University of Lampung Bandar Lampung Computer engineering Vishwakarma Institute of Technology Pune

This paper examines the reproducibility of massive information analytics under particular factors. The paper proposes the “performing Scalable Inference” technique to cope with scalability troubles and to exploit current big statistics platforms for efficient computing and statistics garage of the statistics. In particular, the paper describes how to perform leak-free, parallelizable visible analytics over massive datasets using present extensive records analytics frameworks such as Apache Flink. This method presents an automated manner to execute analytics that preserves reproducibility and the ability to make adjustments without re-running the entire technique. The paper also demonstrates how these analytics may help several real-world use instances, explore affected person cohorts for studies, and develop stratified patient cohorts for hospital therapy. In the end, the paper observes how the proposed method may be exercised within the real world. Actively scalable inference for massive information analytics is pivotal in optimizing decision-making and allocation of assets. Typically, such inferences are made based on information accumulated from numerous sources, databases, unstructured data, and different digital sources. So one can ensure scalability, a complete cloud-primarily based platform has to be hired. This solution will permit the ***, deploying the essential records series and evaluation algorithms are prime here. It could permit the platform to recognize the styles inside the statistics and discover any ability correlations or traits. Additionally, predictive analytics and system mastering strategies may be incorporated to provide insights into the results of the information. In the long run, by leveraging those techniques, the platform can draw efficient inferences and appropriately compare situations in an agile and green way..

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Spin Seebeck effect at low temperatures in the nominally paramagnetic insulating state of vanadium dioxide

arXiv

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arXiv 2022年

作者： Luo, Renjie Zhao, Xuanhan Chen, Liyang Legvold, Tanner J. Navarro, Henry Schuller, Ivan K. Natelson, Douglas Department of Physics and Astronomy Rice University HoustonTX77005 United States Applied Physics Graduate Program Rice University HoustonTX77005 United States Department of Physics Center for Advanced Nanoscience University of California-San Diego La Jolla CA92093 United States Department of Electrical and Computer Engineering Department of Materials Science and NanoEngineering Rice University HoustonTX77005 United States

The low temperature monoclinic, insulating phase of vanadium dioxide is ordinarily considered nonmagnetic, with dimerized vanadium atoms forming spin singlets, though paramagnetic response is seen at low temperatures. We find a nonlocal spin Seebeck signal in VO2 films that appears below 30 K and which increases with decreasing temperature. The spin Seebeck response has a non-hysteretic dependence on in-plane external magnetic field. This paramagnetic spin Seebeck response is discussed in terms of prior findings on paramagnetic spin Seebeck effects and expected magnetic excitations of the monoclinic ground state. Copyright © 2022, The Authors. All rights reserved.

关键词： Vanadium dioxide

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Potential Fluctuations at Low Temperatures in Mesoscopic-Scale SmTiO3/SrTiO3/SmTiO3 Quantum Well Structures

arXiv

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arXiv 2017年

作者： Hardy, Will J. Isaac, Brandon Marshall, Patrick Mikheev, Evgeny Zhou, Panpan Stemmer, Susanne Natelson, Douglas Applied Physics Graduate Program Smalley-Curl Institute Rice University HoustonTX United States Materials Department University of California Santa BarbaraCA United States Department of Physics and Astronomy Rice University HoustonTX United States Department of Electrical and Computer Engineering Rice University HoustonTX United States Department of Materials Science and Nanoengineering Rice University HoustonTX United States

Heterointerfaces of SrTiO3 with other transition metal oxides make up an intriguing family of systems with a bounty of coexisting and competing physical orders. Some examples, such as LaAlO3/SrTiO3, support a high carrier density electron gas at the interface whose electronic properties are determined by a combination of lattice distortions, spin-orbit coupling, defects, and various regimes of magnetic and charge ordering. Here, we study electronic transport in mesoscale devices made with heterostructures of SrTiO3 sandwiched between layers of SmTiO3, in which the transport properties can be tuned from a regime of Fermi-liquid like resistivity (ρ ∝ T2) to a non-Fermi liquid (ρ ∝ T5/3) by controlling the SrTiO3 thickness. In mesoscale devices at low temperatures, we find unexpected voltage fluctuations that grow in magnitude as T is decreased below 20 K, are suppressed with increasing contact electrode size, and are independent of the drive current and contact spacing distance. Magnetoresistance fluctuations are also observed, which are reminiscent of universal conductance fluctuations but not entirely consistent with their conventional properties. Candidate explanations are considered, and a mechanism is suggested based on mesoscopic temporal fluctuations of the Seebeck coefficient. An improved understanding of charge transport in these model systems, especially their quantum coherent properties, may lead to insights into the nature of transport in strongly correlated materials that deviate from Fermi liquid theory. Copyright © 2017, The Authors. All rights reserved.

关键词： Rare earths

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Ultrastrong Spin-Photon Coupling in Gadolinium Gallium Garnet

Ultrastrong Spin-Photon Coupling in Gadolinium Gallium Garne...

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2023 Conference on Lasers and Electro-Optics, CLEO 2023

作者： Kritzell, T. Elijah Bao, Junzhe Doumani, Jacques Lee, Jae Joon Xu, Hongjing Tay, Fuyang Nojiri, Hiroyuki Bamba, Motoaki Baydin, Andrey Kono, Junichiro Department of Electrical and Computer Engineering Rice University HoustonTX77005 United States Applied Physics Graduate Program Smalley-Curl Institute Rice University HoustonTX77005 United States Department of Physics and Astronomy Rice University HoustonTX77005 United States Institute for Materials Research Tohoku University Sendai980-8577 Japan The Hakubi Center for Advanced Research Kyoto University Kyoto606-8502 Japan Department of Physics I Kyoto University Kyoto606-8502 Japan Smalley-Curl Institute Rice University HoustonTX77005 United States Department of Material Science and NanoEngineering Rice University HoustonTX77005 United States

We examine ultrastrong coupling of an ensemble of paramagnetic spins in Gd3Ga5O12 with terahertz photons in the presence of a high external magnetic field both in the bulk and thin-film limits. © 2023 The Author(s)

ISBN: (纸本)9781957171258

关键词： Photons

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Coupling Rendering and Generative Adversarial Networks for Artificial SAS Image Generation

Coupling Rendering and Generative Adversarial Networks for A...

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OCEANS

作者： Albert Reed Isaac D. Gerg John D. McKay Daniel C. Brown David P. Williamsk Suren Jayasuriya School of Electrical Computer & Energy Engineering Arizona State University Tempe AZ USA School of Electrical Engineering and Computer Science Pennsylvania State University State College PA USA Applied Research Laboratory Pennsylvania State University State College PA USA Graduate Program in Acoustics Pennsylvania State University State College PA USA NATO STO Centre for Maritime Research & Experimentation La Spezia Italy School of Arts Media & Engineering Arizona State University Tempe AZ USA

There is a growing demand for large-scale Synthetic Aperture Sonar (SAS) datasets. This demand stems from data-driven applications such as Automatic Target Recognition (ATR) [1]-[3], segmentation [4] and oceanographic research of the seafloor, simulation for sensor prototype development and calibration [5], and even potential higher level tasks such as motion estimation [6] and micronavigation [7]. Unfortunately, the acquisition of SAS data is bottlenecked by the costly deployment of SAS imaging systems, and even when data acquisition is possible, the data is often skewed towards containing barren seafloor rather than objects of interest. This skew introduces a data imbalance problem wherein a dataset can have as much as a 1000-to-1 ratio of seafloor background to object-of-interest SAS image chips.

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Observation of current-induced switching in non-collinear antiferromagnetic IrMn3 by differential voltage measurements

arXiv

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arXiv 2021年

作者： Arpaci, Sevdenur Lopez-Dominguez, Victor Shi, Jiacheng Sánchez-Tejerina, Luis Garesci, Francesca Wang, Chulin Yan, Xueting Sangwan, Vinod K. Grayson, Matthew Hersam, Mark C. Finocchio, Giovanni Amiri, Pedram Khalili Department of Electrical and Computer Engineering Northwestern University EvanstonIL60208 United States Graduate Program in Applied Physics Northwestern University EvanstonIL60208 United States Department of Mathematical and Computer Sciences Physical Sciences and Earth Sciences University of Messina Messina98166 Italy Department of Engineering University of Messina Messina98166 Italy Department of Materials Science and Engineering Northwestern University EvanstonIL60208 United States Department of Chemistry Northwestern University EvanstonIL60208 United States

There is accelerating interest in developing memory devices using antiferromagnetic (AFM) materials, motivated by the possibility for electrically controlling AFM order via spin-orbit torques, and its read-out via magnetoresistive effects. Recent studies have shown, however, that high current densities create non-magnetic contributions to resistive switching signals in AFM/heavy metal (AFM/HM) bilayers, complicating their interpretation. Here we introduce an experimental protocol to unambiguously distinguish current-induced magnetic and nonmagnetic switching signals in AFM/HM structures, and demonstrate it in IrMn3/Pt devices. A six-terminal double-cross device is constructed, with an IrMn3 pillar placed on one cross. The differential voltage is measured between the two crosses with and without IrMn3 after each switching attempt. For a wide range of current densities, reversible switching is observed only when write currents pass through the cross with the IrMn3 pillar, eliminating any possibility of non-magnetic switching artifacts. Micromagnetic simulations support our findings, indicating a complex domain-mediated switching process. © 2021, CC BY.

关键词： Binary alloys

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Validating first-principles molecular dynamics calculations of oxide/water interfaces with x-ray reflectivity data

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Physical Review Materials 2020年第11期4卷 113805-113805页

作者： Katherine J. Harmon Kendra Letchworth-Weaver Alex P. Gaiduk Federico Giberti Francois Gygi Maria K. Y. Chan Paul Fenter Giulia Galli Applied Physics Graduate Program Northwestern University Evanston Illinois 60208 USA Center for Nanoscale Materials Argonne National Laboratory Lemont Illinois 60439 USA Pritzker School of Molecular Engineering University of Chicago Chicago Illinois 60637 USA Department of Physics and Astronomy James Madison University Harrisonburg Virginia 22807 USA Department of Computer Science University of California Davis California 95616 USA Chemical Sciences and Engineering Division Argonne National Laboratory Lemont Illinois 60439 USA Materials Science Division Argonne National Laboratory Lemont Illinois 60439 USA Department of Chemistry University of Chicago Chicago Illinois 60637 USA

Metal oxide/water interfaces play a crucial role in many electrochemical and photocatalytic processes, such as photoelectrochemical water splitting, the creation of fuel from sunlight, and electrochemical CO2 reduction. First-principles electronic structure calculations can reveal unique insights into these processes, such as the role of the alignment of the oxide electronic energy levels with those of liquid water. An essential prerequisite for the success of such calculations is the ability to predict accurate structural models of these interfaces, which in turn requires careful experimental validation. Here we report a general, quantitative validation protocol for first-principles molecular dynamics simulations of oxide/aqueous interfaces. The approach makes direct comparisons of interfacial x-ray reflectivity (XR) signals from experimental measurements and those obtained from ab initio simulations with semilocal and van der Waals functionals. The protocol is demonstrated here for the case of the Al2O3(001)/water interface, one of the simplest oxide/water interfaces. We discuss the technical requirements needed for validation, including the choice of the density functional, the simulation cell size, and the optimal choice of the thermodynamic ensemble. Our results establish a general paradigm for the validation of structural models and interactions at solid/water interfaces derived from first-principles simulations. While there is qualitative agreement between the simulated structures and the experimental best-fit structure, direct comparisons of simulated and measured XR intensities show quantitative discrepancies that derive from both bulk regions (i.e., alumina and water) as well as the interfacial region, highlighting the need for accurate density functionals to properly describe interfacial interactions. Our results show that XR data are sensitive not only to the atomic structure (i.e., the atom locations) but also to the electron-density distributions in bo

关键词： First-principles calculations Surface & interfacial phenomena Liquid-solid interfaces Electronic structure X-ray reflectivity

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Polycrystalline ZrTe5 Parametrized as a Narrow-Band-Gap Semiconductor for Thermoelectric Performance

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Physical Review applied 2018年第1期9卷 014025-014025页

作者： Samuel A. Miller Ian Witting Umut Aydemir Lintao Peng Alexander J. E. Rettie Prashun Gorai Duck Young Chung Mercouri G. Kanatzidis Matthew Grayson Vladan Stevanović Eric S. Toberer G. Jeffrey Snyder Department of Materials Science and Engineering Northwestern University Evanston Illinois 60208 USA Department of Chemistry Koç University Sariyer Istanbul 34450 Turkey Applied Physics Graduate Program Northwestern University Evanston Illinois 60208 USA Materials Science Division Argonne National Laboratory Argonne Illinois 60439 USA National Renewable Energy Laboratory Golden Colorado 80401 USA Department of Metallurgical and Materials Engineering Colorado School of Mines Golden Colorado 80401 USA Department of Chemistry Northwestern University Evanston Illinois 60208 USA Department of Electrical Engineering and Computer Science Northwestern University Evanston Illinois 60208 USA Department of Physics Colorado School of Mines Golden Colorado 80401 USA

The transition-metal pentatellurides HfTe5 and ZrTe5 have been studied for their exotic transport properties with much debate over the transport mechanism, band gap, and cause of the resistivity behavior, including a large low-temperature resistivity peak. Single crystals grown by the chemical-vapor-transport method have shown an n−p transition of the Seebeck coefficient at the same temperature as a peak in the resistivity. We show that behavior similar to that of single crystals can be observed in iodine-doped polycrystalline samples but that undoped polycrystalline samples exhibit drastically different properties: they are p type over the entire temperature range. Additionally, the thermal conductivity for polycrystalline samples is much lower, 1.5 Wm−1 K−1, than previously reported for single crystals. It is found that the polycrystalline ZrTe5 system can be modeled as a simple semiconductor with conduction and valence bands both contributing to transport, separated by a band gap of 20 meV. This model demonstrates to first order that a simple two-band model can explain the transition from n- to p-type behavior and the cause of the anomalous resistivity peak. Combined with the experimental data, the two-band model shows that carrier concentration variation is responsible for differences in behavior between samples. Using the two-band model, the thermoelectric performance at different doping levels is predicted, finding zT=0.2 and 0.1 for p and n type, respectively, at 300 K, and zT=0.23 and 0.32 for p and n type at 600 K. Given the reasonably high zT that is comparable in magnitude for both n and p type, a thermoelectric device with a single compound used for both legs is feasible.

关键词： Band gap Charge density waves Hall effect Semimetals Spin-orbit coupling Thermoelectric effects Chalcogenides Semiconductor compounds

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Hot Carrier Injection (HCI) Reliability of Fabricated Y-gate HEMT with Various Top Length

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ECS Journal of Solid State science and Technology 2023年第3期12卷 035001-035001页

作者： Chen, Yu-Lin Yeh, Wen-Kuan Chen, Ke-Horng Hsu, Heng-Tung Hsu, Chin-Tsai Godwin Raj, D. Chou, Hung-Ting Wu, Jui-Sheng Yu, Tien-Han Godfrey, D. Graduate Degree Program of College of Electrical and Computer Engineering National Yang Ming Chiao Tung University Hsinchu Taiwan International College of Semiconductor Technology National Yang Ming Chiao Tung University Hsinchu Taiwan National Applied Research Laboratories Hsinchu Taiwan Dept of ECE Amal Jyothi College of Engineering Kerala India National Chung Shan Institute of Science and Technology Taoyuan Taiwan Deparment of Materials Science and Engineering National Yang Ming Chiao Tung University Hsinchu Taiwan Dept of Electronics and Communication Engineering Dayananda Sagar University Bengaluru India

Device degradation due to hot carrier injection (HCI) in different Y-gate HEMT devices is thoroughly analyzed. To further understand the HCI reliability of the Y-gate HEMT devices, the device is fabricated with AlGaN/GaN structure with different top lengths (Ltop). An HCI stress time of 6000 s was conducted on these devices, while V t stability in other stress time domains, leakage current, and transconductance degradation are also discussed. In this work, we have demonstrated that increasing the LTop length could avoid the virtual gate effect and disperse the influence of the electric field under HCI stress. Furthermore, the effects of trapping in various locations, such as in the bulk SiN or AlGaN/GaN interface has been discussed. These trapping effects caused by the HCI stress might be the source of the Vth shift. Overall, The large Y-gate HEMT showed the lowest degradation of DC characteristics after the long HCI stress test. © 2023 The Electrochemical Society ("ECS"). Published on behalf of ECS by IOP Publishing Limited.

关键词： High electron mobility transistors

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Nanoscale probing of image-potential states and electron transfer doping in borophene polymorphs

arXiv

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arXiv 2020年

作者： Liu, Xiaolong Wang, Luqing Yakobson, Boris I. Hersam, Mark C. Applied Physics Graduate Program Northwestern University EvanstonIL60208 United States Department of Materials Science and NanoEngineering Rice University HoustonTX77005 United States Department of Chemistry Rice University HoustonTX77005 United States Department of Materials Science and Engineering Northwestern University EvanstonIL60208 United States Department of Chemistry Northwestern University EvanstonIL60208 United States Department of Electrical and Computer Engineering Northwestern University EvanstonIL60208 United States

Using field-emission resonance spectroscopy with an ultrahigh vacuum scanning tunneling microscope, we reveal Stark-shifted image-potential states of the v1/6 and v1/5 borophene polymorphs on Ag(111) with long lifetimes, suggesting high borophene lattice and interface quality. These image-potential states allow the local work function and interfacial charge transfer of borophene to be probed at the nanoscale and test the widely employed self-doping model of borophene. Supported by apparent barrier height measurements and density functional theory calculations, electron transfer doping occurs for both borophene phases from the Ag(111) substrate. In contradiction with the self-doping model, a higher electron transfer doping level occurs for denser v1/6 borophene compared to v1/5 borophene, thus revealing the importance of substrate effects on borophene electron transfer. Copyright © 2020, The Authors. All rights reserved.

关键词： Electron transitions

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