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International Joint Conference on Neural Networks

作者： Marcio Rubbo Leandro A. Silva Graduate Program in Electrical Engineering and Computing Mackenzie Presbyterian University Sao Paulo SP Brazil Computing and Informatics Faculty & Graduate Program in Electrical Engineering and Computing Mackenzie Presbyterian University Sao Paulo SP Brazil

The k nearest neighbor (kNN) is a traditional supervised classifier used in data mining tasks. However, when used in real applications, mainly in a dataset with class imbalance or class overlap, kNN suffers with problems in accuracy performance. In this paper, we propose three prototype selection methods using self-organizing maps (SOM) and information entropy to increase the effectiveness of the kNN classifier in datasets with these conditions. The methods, named SOMEntropyKnn, were able to increase the effectiveness of the kNN classifier in all the 14 datasets used in the experiment, increasing the accuracy performance from datasets with imbalance or overlap problems.

关键词： Prototypes Entropy Self-organizing feature maps Neurons Training Information entropy electrical engineering

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Identifying Materials-Level Sources of Performance Variation in Superconducting Transmon Qubits

arXiv

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arXiv 2025年

作者： Murthy, Akshay A. Bal, Mustafa Bedzyk, Michael J. Cansizoglu, Hilal Chan, Randall K. Chandrasekhar, Venkat Crisa, Francesco Datta, Amlan Deng, Yanpei Matute Diaz, Celeo D. Dravid, Vinayak P. Garcia-Wetten, David A. Garattoni, Sabrina Ghimire, Sunil Goronzy, Dominic P. de Graaf, Sebastian E. Haeuser, Sam Hersam, Mark C. Isheim, Dieter Joshi, Kamal Kim, Richard Kolachina, Saagar Kopas, Cameron J. Kramer, Matthew J. Lachman, Ella O. Lee, Jaeyel Lim, Peter G. Lunin, Andrei Mah, William Marshall, Jayss Mutus, Josh Y. Oh, Jin-Su Pappas, David P. Park, Joong-Mok Prozorov, Ruslan dos Reis, Roberto Seidman, David N. Sung, Zuhawn Tanatar, Makariy Walker, Mitchell J. Wang, Jigang Wu, Haotian Zhou, Lin Zhu, Shaojiang Grassellino, Anna Romanenko, Alexander BataviaIL60510 United States Department of Materials Science and Engineering Northwestern University EvanstonIL60208 United States Rigetti Computing BerkeleyCA94710 United States Ames National Laboratory AmesIA50011 United States Department of Physics & Astronomy Iowa State University AmesIA50011 United States Department of Physics and Astronomy Northwestern University EvanstonIL60208 United States The NUANCE Center Northwestern University EvanstonIL60208 United States International Institute of Nanotechnology Northwestern University EvanstonIL60208 United States National Physical Laboratory TeddingtonTW11 0LW United Kingdom Department of Chemistry Northwestern University EvanstonIL60208 United States Department of Electrical and Computer Engineering Northwestern University EvanstonIL60208 United States Applied Physics Graduate Program Northwestern University EvanstonIL60208 United States Department of Materials Science and Engineering Iowa State University AmesIA50011 United States

The Superconducting Materials and Systems (SQMS) Center, a DOE National Quantum Information Science Research Center, has conducted a comprehensive and coordinated study using superconducting transmon qubit chips with known performance metrics to identify the underlying materials-level sources of device-to-device performance variation. Following qubit coherence measurements, these qubits of varying base superconducting metals and substrates have been examined with various nondestructive and invasive material characterization techniques at Northwestern University, Ames National Laboratory, and Fermilab as part of a blind study. We find trends in variations of the depth of the etched substrate trench, the thickness of the surface oxide, and the geometry of the sidewall, which when combined, lead to correlations with the T1 lifetime across different devices. In addition, we provide a list of features that varied from device to device, for which the impact on performance requires further studies. Finally, we identify two low-temperature characterization techniques that may potentially serve as proxy tools for qubit measurements. These insights provide materials-oriented solutions to not only reduce performance variations across neighboring devices, but also to engineer and fabricate devices with optimal geometries to achieve performance metrics beyond the state-of-the-art values. © 2025, CC BY.

关键词： Qubits

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Application of local point interpolation method to electromagnetic problems with material discontinuities using a new visibility criterion

Application of local point interpolation method to electroma...

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作者： Lima, Naísses Z. Fonseca, Alexandre R. Mesquita, Renato C. Graduate Program in Electrical Engineering Federal University of Minas Gerais Brazil Department of Computing Universidade Federal Dos Vales Do Jequitinhonha e Mucuri Brazil Department of Electrical Engineering Federal University of Minas Gerais Brazil

In this paper, the local point interpolation method (LPIM) is used with a modified visibility criterion to handle material discontinuities. In general, visibility criterion is applied only to shape function generation over support nodes selection. We present a modified version where it is also applied to the integration process. The method is simpler and more robust than other techniques often employed on multimaterials problems, with a straight-forward implementation. © 2012 IEEE.

关键词： Interpolation

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Using equivalence classes for testing programs for safety instrumented systems

Using equivalence classes for testing programs for safety in...

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2013 IEEE 18th International Conference on Emerging Technologies and Factory Automation, ETFA 2013

作者： De Vasconcelos Oliveira, Kézia Perkusich, Angelo Gorgônio, Kyller Costa Dias Da Silva, Leandro Martins, Aldenor Falcão Center of Electrical Engineering and Informatics Federal University of Campina Grande Campina Grande Parafba Brazil Computing Institute Federal University of Alagoas Maceió Alagoas Brazil Graduate Program in Electrical Engineering Federal University of Campina Grande Campina Grande Paraíba Brazil

ISBN: (纸本)9781479908622

The reliability on Safety Instrumented Systems (SIS) is critical for the safe operation of many industrial applications. In particular, SIS play an important role in oil and gas processing plants. SIS are responsible not only for the continuous operation of the plant, it also keeps the plant in a safe state, avoiding damages to the environment and minimizing risks to employees. Therefore, the correct behavior of such systems is an important goal to achieve when building industrial plants. Verification and testing of SIS programs is a very hard task to accomplish. This happens mainly for two reasons. First, testing the real system is very expensive and sometimes it may take a huge amount of time, weeks or even months. Second, those systems deal with a huge number of variables. It is not always possible for a human tester to check if all of them are correct when performing tests. Providing an automatic and formal testing approach for such systems is an important contribution for the development of such systems. In this work we introduce a new method for generating test cases for SIS programs running on programable Logic Controller (PLC). As we did on previous work, ISA 5.2 diagrams are used as specification of the systems, but now we are using a hardware-in-the-loop technique, and the target artifact is a software running on a PLC. To avoid the execution of redundant tests, we introduced a new test case generation algorithm that is based on equivalence classes. Finally, we discussed a study case in which our method is used to detect error, that were introduced on purpose, on a simple system. © 2013 IEEE.

关键词： Safety testing

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electrical Characteristic and Power Fluctuations of GAA Si NS CFETs by Simultaneously Considering Six Process Variation Factors

IEEE Open Journal of Nanotechnology

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IEEE Open Journal of Nanotechnology 2023年 4卷 229-238页

作者： Kola, Sekhar Reddy Li, Yiming National Yang Ming Chiao Tung University Parallel and Scientific Computing Laboratory Electrical Engineering and Computer Science International Graduate Program Hsinchu300093 Taiwan Parallel and Scientific Computing Laboratory National Yang Ming Chiao Tung University Hsinchu300093 Taiwan National Yang Ming Chiao Tung University Institute of Communications Engineering Hsinchu300093 Taiwan National Yang Ming Chiao Tung University Institute of Biomedical Engineering Hsinchu300093 Taiwan National Yang Ming Chiao Tung University Department of Electronics and Electrical Engineering Hsinchu300093 Taiwan

Characteristic variability induced by process variation effect (PVE) is one of technological challenges in semiconductor industry. In this work, we computationally study electrical characteristic and power fluctuations induced by six factors of PVE of the gate-all-around (GAA) silicon (Si) nanosheet (NS) complementary field-effect-transistors (CFETs) which are formed by vertically stacking n-FET on top of p-FET. Among the six factors, NS thickness (TNS), NS width (WNS), and gate length (LG) are identified as crucial factors contributing to large variations in device characteristics. The p-FET exhibits substantial off-state current fluctuation (about 151%) due to the bottom parasitic channel leakages. Compared with the magnitudes of dynamic and short circuit powers, the static power is marginal, but it possesses the largest fluctuation (up to 148%). If we assume that each factor of PVE has the same probability distribution as the others and all are mutually independent, the statistical sum of their power fluctuations will exhibit more than 50% overestimations, compared with the results when all factors are considered simultaneously. © 2020 IEEE.

关键词： III-V semiconductors

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HAEE: Question Classification Using Hierarchical Intra-Attention Enhancement Encoder

HAEE: Question Classification Using Hierarchical Intra-Atten...

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26th International Conference on Technologies and Applications of Artificial Intelligence, TAAI 2021

作者： Wang, Jen-Wei Chen, Kai-Hsiang Huang, Jen-Wei National Cheng Kung University Department of Electrical Engineering Tainan Taiwan National Cheng Kung University and Academia Sinica Graduate Program for Multimedia Systems and Intelligent Computing Taiwan

ISBN: (纸本)9781665408257

With the development of E-commerce, an Automated Question-Answering system takes a crucial part in customer service. Question classification, which assigns labels to questions according to the answer types, is one of the tasks in question answering. Previous methods usually used handcraft features like named entity recognition, but it needs the predefined dictionary or tools. The machine learning approaches are recently applied to this task and achieve high accuracy. In this paper, we proposed HAEE, a Hierarchical intra-Attention Enhancement Encoder which composed of bidirectional GRUs and intra-attentions. In addition, we adopt the character input to address the issue of the OOV (Out-Of-Vocabulary) problem and create multiple intra-attentions to simulate the certain relationships between characters (Chinese) or words (English) to enhance the influence of tokens on the sentence. We evaluate the HAEE model in an actual corporate setting and several datasets. As shown in the experimental results, our HAEE model outperforms the existing state-of-the-art models on question classification tasks, especially for the Chinese corpus. © 2021 IEEE.

关键词： Signal encoding

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Enhancing the Performance of E-Mode AlGaN/GaN HEMTs With Recessed Gates Through Low-Damage Neutral Beam Etching and Post-Metallization Annealing

IEEE Open Journal of Nanotechnology

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IEEE Open Journal of Nanotechnology 2023年 4卷 150-155页

作者： Chen, Yi-Ho Ohori, Daisuke Aslam, Muhammad Lee, Yao-Jen Li, Yiming Samukawa, Seiji National Yang Ming Chiao Tung University Parallel and Scientific Computing Laboratory Graduate Degree Program of College of Electrical and Computer Engineering Hsinchu300093 Taiwan Tohoku University Institute of Fluid Science Sendai980-8577 Japan National Yang Ming Chiao Tung University Parallel and Scientific Computing Laboratory Electrical Engineering and Computer Science International Graduate Program Hsinchu300093 Taiwan National Yang Ming Chiao Tung University Institute of Pioneer Semiconductor Innovation Hsinchu300093 Taiwan National Yang Ming Chiao Tung University Parallel and Scientific Computing Laboratory Institute of Communications Engineering Institute of Biomedical Engineering Hsinchu300093 Taiwan National Yang Ming Chiao Tung University Department of Electronics and Electrical Engineering Hsinchu300093 Taiwan National Yang Ming Chiao Tung University Institute of Communications Engineering Hsinchu300093 Taiwan

This study investigated the electrical properties of AlGaN/GaN high-electron-mobility transistors (HEMTs) with varied recess depths under the gate electrode. We demonstrated a recess depth of approximately 6 nm, which was achieved through neutral beam etching (NBE) technique with a low etch rate of 1.8 nm/min, resulting in device enhancement-mode (E-mode) behavior with threshold voltage (Vth) of 0.49 V. The effects of post-metallization annealing (PMA) on the device performance were also examined. The results revealed that PMA treatment improves the DC characteristics of the devices, including maximum drain current (IDMAX), transconductance (gm), subthreshold swing (SS), on-off ratio, and off-state leakage current, with maximum enhancement percentage of 18.3% for IDMAX, 3758% for on-off ratio, and 54.3% for SS. Moreover, this study compared the recess depths of metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs) with the SiN dielectric layer. The results showed that MIS-HEMTs exhibit more negative Vth values, which can be attributed to the controlled surface states achieved through passivation. © 2020 IEEE.

关键词： Etching

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Conventional and adaptive strategies applied to DC motor control using microcontroller PIC18F4520 7

Conventional and adaptive strategies applied to DC motor con...

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7th Brazilian electrical Systems Symposium, SBSE 2018

作者： Taveiros, Filipe Emanuel Vieira Barros, Luciano Sales Barros, Camila Mara Vital Electrical Engineering and Computing Graduate Program of Federal University of Rio Grande Do Norte Natal Brazil Electrical Engineering Department of Federal University of Rio Grande Do Norte Natal Brazil Computer Systems Department of Federal University of Paraíba João Pessoa Brazil

ISBN: (纸本)9781538633632

In this paper strategies to control the speed of a generic DC motor system are discussed. They range from the conventional, like PID and state-feedback, to reference model adaptive algorithms such as MRAC, VS-MRAC and DMARC. The goal of this study is to determine the best control strategy for high-performance applications regarding to stability, robustness and optimal controller effort. In theory and sometimes in practice, all these control strategies proof themselves reliable, however, in heavy-duty set-point references the application requires high performance of the controller under disturbances, unmodeled dynamics and variable speed reference conditions. The use of appropriate control strategies can highly contribute to this purpose. To support the conclusions, the control strategies have been embedded in a microcontroller PIC18F4520 and applied to a test motor in order to obtain experimental results. © 2018 IEEE.

关键词： Three term control systems

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Temperature-Dependent Hydrogen Modulations of Ultra-Scaled a-IGZO Thin Film Transistor Under Gate Bias Stress

IEEE Open Journal of Nanotechnology

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IEEE Open Journal of Nanotechnology 2024年 5卷 9-16页

作者： Aslam, Muhammad Chang, Shu-Wei Chuang, Min-Hui Chen, Yi-Ho Lee, Yao-Jen Li, Yiming Parallel and Scientific Computing Laboratory National Yang Ming Chiao Tung University Hsinchu300093 Taiwan Electrical Engineering and Computer Science International Graduate Program National Yang Ming Chiao Tung University Hsinchu300093 Taiwan Department of Electrical Engineering National Cheng Kung University Tainan701401 Taiwan Institute of Communications Engineering National Yang Ming Chiao Tung University Hsinchu300093 Taiwan Graduate Degree Program of College of Electrical and Computer Engineering National Yang Ming Chiao Tung University Hsinchu300093 Taiwan Institute of Pioneer Semiconductor Innovation National Yang Ming Chiao Tung University Hsinchu300093 Taiwan Institute of Biomedical Engineering National Yang Ming Chiao Tung University Hsinchu300093 Taiwan Department of Electronics and Electrical Engineering National Yang Ming Chiao Tung University Hsinchu300093 Taiwan

Recently, a-IGZO has advanced toward the next-generation electronics system because of its compatibility with complementary metal oxide semiconductor (CMOS) and back-end-of-line (BOEL) based systems. A systematic electrical characterization of a-IGZO TFT related to reliability issues, such as positive bias temperature stress (PBTS) and negative bias temperature stress (NBTS), would entitle its integration into novel electronics systems. Unexpectedly, PBTS is characterized by the transition of positive Vth shift to negative Vth shift (ΔVth, the positive shift followed by the stress and temperature activated negative shift). This transition is attributed to charge trapping/trap-site generations and hydrogen migration to the active layer. The ΔVth shift mechanism depends on the temperature and voltage stress. On the other hand, a negative ΔVth shift has been observed during the NBTS operation and could be attributed to the hole trapping at the interface of GI/IGZO. An effective suppression of the gate leakage current has also been observed during reliability tests. Simulation results reveal a pronounced potential at the edges of source and drain regions, and considered the origin of hydrogen migration into the IGZO layer. Thermal image results also reveal the strong temperature/potential distribution at the edges of the source/drain regions, indorsing the simulation results. © 2020 IEEE.

关键词： Oxide semiconductors

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Scaling Limitations of Line TFETs at Sub-8-nm Technology Node

Scaling Limitations of Line TFETs at Sub-8-nm Technology Nod...

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2020 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2020

作者： Thoti, Narasimhulu Li, Yiming Kola, Sekhar Reddy Parallel and Scientific Computing Laboratory Eecs International Graduate Program Institute of Communications Engineering Department of Electrical and Computer Engineering Center for MmWave Smart Radar System and Technologies National Chiao Tung University 1001 Ta-Hsueh Rd Hsinchu300 Taiwan

ISBN: (纸本)9781728142326

The scope of the work is to investigate limitations in device scaling by identifying various parameters of short channel effects (SCEs) in current challenging geometries of the line tunnel field effect transistors (TFETs). Key factors of the considered device, such as the doping and the thickness (tn) of n-epitaxial region, and source-to-drain length (LSDeff) scaling cannot be tuned anymore to boost the device characteristics for the sub-8-nm technology node. The main results of this study indicates that the engineering acceptable performance are achieved at a low doping of 5 1018 cm-3, an optimal tn as low (about 0.5 nm), and a LSDeff greater than 12.5 nm. Hence, the line TFETs below sub-8-nm faces serious bottleneck of scaling and cannot be further scaled with the conventional scaling rule at all. © 2020 IEEE.

关键词： Tunnel field effect transistors

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