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IEEE Annual Southern Power electronics Conference (SPEC)

作者： Renata Oliveira De Sousa Rodrigo Cássio De Barros William Caires Silva Amorim Allan Fagner Cupertino Heverton Augusto Pereira Department of Electronics Universidade Tecnológica Federal do Paraná Curitiba Brazil Centro de Ciências Exatas e Tecnológicas Universidade Federal do Recôncavo da Bahia Cruz das Almas Brazil Graduate Program in Electrical Engineering Universidade Federal de Minas Gerais Belo Horizonte Brazil Department of Electrical Energy Universidade Federal de Juiż de Fora Juiz de Fora Brazil Department of Electrical Engineering Universidade Federal de Vicosa Viçosa Brazil

Reliable operation is essential for any power electronic system. Nevertheless, power electronic systems include a large number of fragile elements. Among these elements, the semiconductor devices are the most likely to fail. Recent reliability evaluation tools employ a cycle counting algorithm to compute the degradation in semiconductor devices, where the rainflow algorithm is the most popular. However, since the rainflow was first created for fatigue analysis, this algorithm presents some issues when applied for semiconductor devices. Indeed, the rainflow is unable to compute the effective heating time and time-dependent equivalent mean temperature of each thermal cycle. Besides, half-cycles are counted by conventional rainflow. However, apart from the half-cycles at the end of the data, these half-cycles should not be taken into consideration in the life consumption computation. Therefore, this work proposes a modified rainflow for the lifetime estimation of semiconductor devices. This methodology adapts the conventional rainflow to filter half-cycles and compute the effective heating time and the equivalent mean temperature. The impact of the methodology on lifetime estimation is verified in a modular multilevel converter. Besides, analyses with two distinct mission profiles are performed to evaluate the modified impact on lifetime estimation. The results demonstrated that the modified rainflow significantly affects the lifetime computation of all critical joints of an insulatedgate bipolar transistor (IGBT) module for both case studies considered.

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Generative AI for Unmanned Vehicle Swarms: Challenges, Applications and Opportunities

arXiv

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arXiv 2024年

作者： Liu, Guangyuan Van Huynh, Nguyen Du, Hongyang Hoang, Dinh Thai Niyato, Dusit Zhu, Kun Kang, Jiawen Xiong, Zehui Jamalipour, Abbas In Kim, Dong The School of Computer Science and Engineering The Energy Research Institute @ NTU Interdisciplinary Graduate Program Nanyang Technological University Singapore The Department of Electrical Engineering and Electronics University of Liverpool Liverpool L69 3GJ United Kingdom The School of Electrical and Data Engineering University of Technology Sydney Australia The School of Computer Science and Engineering Nanyang Technological University Singapore College of Computer Science and Technology Nanjing University of Aeronautics and Astronautics Nanjing China The School of Automation Guangdong University of Technology China The Pillar of Information Systems Technology and Design Singapore University of Technology and Design Singapore The School of Electrical and Information Engineering University of Sydney Australia The College of Information and Communication Engineering Sungkyunkwan University Korea Republic of

With recent advances in artificial intelligence (AI) and robotics, unmanned vehicle swarms have received great attention from both academia and industry due to their potential to provide services that are difficult and dangerous to perform by humans. However, learning and coordinating movements and actions for a large number of unmanned vehicles in complex and dynamic environments introduce significant challenges to conventional AI methods. Generative AI (GAI), with its capabilities in complex data feature extraction, transformation, and enhancement, offers great potential in solving these challenges of unmanned vehicle swarms. For that, this paper aims to provide a comprehensive survey on applications, challenges, and opportunities of GAI in unmanned vehicle swarms. Specifically, we first present an overview of unmanned vehicles and unmanned vehicle swarms as well as their use cases and existing issues. Then, an in-depth background of various GAI techniques together with their capabilities in enhancing unmanned vehicle swarms are provided. After that, we present a comprehensive review on the applications and challenges of GAI in unmanned vehicle swarms with various insights and discussions. Finally, we highlight open issues of GAI in unmanned vehicle swarms and discuss potential research directions. © 2024, CC BY.

关键词： Metadata

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Intrinsic Parameter Fluctuation and Process Variation Effect of Vertically Stacked Silicon Nanosheet Complementary Field-Effect Transistors

Intrinsic Parameter Fluctuation and Process Variation Effect...

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IEEE International Symposium on Quality Electronic Design

作者： Sekhar Reddy Kola Yiming Li Min-Hui Chuang Parallel and Scientific Computing Laboratory Hsinchu Taiwan Electrical Engineering and Computer Science International Graduate Program Hsinchu Taiwan Institute of Communications Engineering Hsinchu Taiwan Institute of Biomedical Engineering Hsinchu Taiwan Institute of Pioneer Semiconductor Innovation Hsinchu Taiwan Institute of Artificial Intelligence Innovation Hsinchu Taiwan Department of Electronics and Electrical Engineering National Yang Ming Chiao Tung University Hsinchu Taiwan Center for mmWave Smart Radar System and Technologies National Yang Ming Chiao Tung University Hsinchu Taiwan

We study the variability of vertically stacked gate-all-around silicon nanosheet (GAA Si NS) complementary field-effect transistors (CFETs). The process variation effect (PVE), the work function fluctuation (WKF), and the random dopant fluctuation (RDF) of CFETs are statistically estimated using an experimentally validated device simulation technique. Among five factors of PVE, the channel thickness (T Nch /T Pch ), the channel width (W ch ), and the gate length (L G ) are significant. Owing to superior GAA channel control and increased effective gate area, both WKF and RDF are suppressed. Notably, the PVE on both N-/P-FETs of GAA Si CFET induce the largest off-state current fluctuations of 80% and 278%, respectively, because the device characteristic is very sensitive to the layer thickness and width of channel.

关键词： Fluctuations Gallium arsenide Logic gates Electric variables Silicon Resource description framework Semiconductor process modeling

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Improved Gain-Scheduled Control Design for Rational Nonlinear Discrete-Time Systems with Input Saturation

Improved Gain-Scheduled Control Design for Rational Nonlinea...

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European Control Conference (ECC)

作者： Gabriela L. Reis Rodrigo F. Araú jo Leonardo A. B. Tô rres Reinaldo M. Palhares Department of Technological Education Graduate Program in Electrical Engineering Federal University of Minas Gerais Federal Institute of Southeast Minas Gerais Minas Gerais Brasil Department of Control and Automation Engineering Amazonas State University Amazonas Brazil Department of Aerospace Engineering California Polytechnic State University CA USA Department of Electronics Engineering Federal University of Minas Gerais Minas Gerais Brazil

ISBN: (数字)9783907144077

ISBN: (纸本)9781665497336

An improved method of control design for rational nonlinear discrete-time systems with input saturation is proposed in this paper. Using Difference-Algebraic Representation (DAR) and parameter-dependent Lyapunov functions, a novel regional stabilization condition in terms of Linear Matrix Inequalities (LMI) is presented. Two optimization problems are addressed to either obtain the largest estimated Domain of Attraction (DoA) or minimize the $\ell_{2}$ -gain from the energy-bounded disturbance input to the performance output. Numerical examples illustrate the potential of the proposed approach.

关键词： Discrete-time systems Direction-of-arrival estimation Control design Finance Europe Estimation Linear matrix inequalities

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Multimodal Spatial Attention Network for Automatic Head and Neck Tumor Segmentation in FDG-PET and CT Images 1

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2nd 3D Head and Neck Tumor Segmentation in PET/CT Challenge, HECKTOR 2021, held in conjunction with 24th International Conference on Medical Image Computing and Computer-Assisted Intervention, MICCAI 2021

作者： Cho, Minjeong Choi, Yujin Hwang, Donghwi Yie, Si Young Kim, Hanvit Lee, Jae Sung School of Electrical and Electronics Engineering Chung-Ang University Seoul06974 Korea Republic of Department of Biomedical Engineering Kyunghee University College of Electronics and Information 1732 Deogyeong-daero Giheung-gu Gyeonggi-do Yongin-si Korea Republic of Department of Nuclear Medicine Seoul National University College of Medicine Seoul03080 Korea Republic of Department of Biomedical Sciences Seoul National University College of Medicine Seoul03080 Korea Republic of Interdisciplinary Program in Bioengineering Seoul National University Graduate School Seoul Korea Republic of Integrated Major in Innovative Medical Science Seoul National University Graduate School Seoul Korea Republic of Ulsan Korea Republic of Artificial Intelligence Institute Seoul National University Seoul08826 Korea Republic of Brightonix Imaging Inc. Seoul04782 Korea Republic of

ISBN: (数字)9783030982539

ISBN: (纸本)9783030982522

Quantitative positron emission tomography/computed tomography (PET/CT), owing to the functional metabolic information and anatomical information of the human body that it presents, is useful to achieve accurate tumor delineation. However, manual annotation of a Volume Of Interest (VOI) is a labor-intensive and time-consuming task. In this study, we automatically segmented the Head and Neck (H&N) primary tumor in combined PET/CT images. Herein, we propose a convolutional neural network named Multimodal Spatial Attention Network (MSA-Net), supplemented with a Spatial Attention Module (SAM), which uses a PET image as an input. We evaluated this model on the MICCAI 2021 HEad and neCK TumOR (HECKTOR) segmentation challenge dataset. Our method delivered a competitive cross-validation efficiency, with Dice Similarity Coefficient (DSC) 0.757, precision 0.788, and recall 0.785. When we tested out method on test dataset, we achieved an average DSC and Hausdorff Distance at 95% (HD95) of 0.766 and 3.155 respectively. Our team name is ‘Heck_Uihak’. © 2022, Springer Nature Switzerland AG.

关键词： Tumors

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SGIRR: Sparse Graph Index Remapping for ReRAM Crossbar Operation Unit and Power Optimization*

SGIRR: Sparse Graph Index Remapping for ReRAM Crossbar Opera...

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IEEE International Conference on Computer-Aided Design

作者： Cheng-Yuan Wang Yao-Wen Chang Yuan-Hao Chang Data Science Degree Program National Taiwan University and Academia Sinica Taipei Taiwan Graduate Institute of Electronics Engineering National Taiwan University Taipei Taiwan Department of Electrical Engineering National Taiwan University Taipei Taiwan Institute of Information Science Academia Sinica Taipei Taiwan

Resistive Random Access Memory (ReRAM) Crossbars are a promising process-in-memory technology to reduce enormous data movement overheads of large-scale graph processing between computation and memory units. ReRAM cells can combine with crossbar arrays to effectively accelerate graph processing, and partitioning ReRAM crossbar arrays into Operation Units (OUs) can further improve computation accuracy of ReRAM crossbars. The operation unit utilization was not optimized in previous work, incurring extra cost. This paper proposes a two-stage algorithm with a crossbar OU-aware scheme for sparse graph index remapping for ReRAM (SGIRR) crossbars, mitigating the influence of graph sparsity. In particular, this paper is the first to consider the given operation unit size with the remapping index algorithm, optimizing the operation unit and power dissipation. Experimental results show that our proposed algorithm reduces the utilization of crossbar OUs by 31.4%, improves the total OU block usage by 10.6%, and saves energy consumption by 17.2%, on average.

关键词： Energy consumption Visualization Resistive RAM Clustering algorithms Benchmark testing Power dissipation Indexes

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Electromagnetic textile absorber applied to 4G and 5G bands

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Scientific reports 2025年第1期15卷 18768页

作者： Paulo H B Carvalho Ewaldo E C Santana Allan K D Barros Filho Paulo F Silva Júnior Keyll C R Martins Talita C Azevedo Waldemir P Martins Mauro A Medeiros Rubens S Gonçalves Lourival M Sousa Filho Gricirene S Correia Gabrielle M Fernandes Talita C Pinheiro Brenda A S Rodrigues Carlos A M Cruz Graduate Program in Electrical Engineering Federal University of Maranhão (UFMA) São Luís MA Brazil. phenrique@ifma.edu.br. Graduate Program in Electrical Engineering Federal University of Maranhão (UFMA) São Luís MA Brazil. Graduate Program in Computer and Systems Engineering Maranhão State University (UEMA) São Luís MA Brazil. Graduate Program in Mechanical Engineering Federal Institute of Maranhão (IFMA) São Luís MA Brazil. Department of Electrical Engineering Federal Institute of Paraíba (IFPB) João Pessoa PB Brazil. Graduate Program in Electrical Engineering Federal University of Amazonas (UFAM) Manaus AM Brazil. Department of Electronics and Computation Federal University of Amazonas (UFAM) Manaus AM Brazil.

Absorber materials are developed to reduce electromagnetic radiation and ensure the compatibility of the operation of electronic equipment in environments subject to interference. This work presents the development of a low-cost textile electromagnetic absorber for 4G and 5G technologies, operating at frequencies of 2.5 GHz and 3.5 GHz. The proposed electromagnetic absorber utilizes a 1 mm-thick Denim substrate, with a graphite composite used in the agricultural and commercial polyvinyl acetate glue industry, with the relationship of 25 wt%. The measurements were carried out in a Vector Network Analyzer, model E5071C Agilent Technologies, with the characterization of the Denim substrate, the glue, and the identification of the best parameters for the construction of the absorber. In the project, three low-cost textile absorbers prototypes were fabricated, with G1 = 0.25 mm, G2 = 0.35 mm, and G3 = 0.5 mm of thickness layers of the composite deposited on a Denim fabric. The results indicate that the absorber prototypes G2 presents great results in the frequency range of 4G and 5G band, with a maximum absorption of 26.6 dB in 3.94 GHz, with a structure 98.83% thinner than the commercial absorber LF-75. The variation in absorption performance may be attributed to the different mechanisms by which the absorbers operate: the commercial absorber LF-75 primarily interacts with the magnetic field, whereas the textile prototype predominantly affects the electric field.

关键词： 4G and 5G bands Electromagnetic Low-cost Textile absorber

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A Security Testbed for Networked DES Control Systems

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IFAC-PapersOnLine 2022年第28期55卷 128-134页

作者： Michel R.C. Alves Karen Rudie Patrícia N. Pena Graduate Program in Electrical Engineering - Universidade Federal de Minas Gerais - Av. Antônio Carlos 6627 31270-901 Belo Horizonte MG Brazil Department of Electrical and Computer Engineering and Ingenuity Labs Research Institute Queen's university Kingston Ontario K7L 3N6 Canada Department of Electronics Engineering - Universidade Federal de Minas Gerais - Av. Antônio Carlos 6627 31270-901 Belo Horizonte MG Brazil

In this paper we present an implementation scheme for a networked control system where the coordination between devices is done by supervisory control theory. The system is intended to be used as a testbed for DES security-related techniques. We provide some examples of attacks whose effect can be evaluated using the proposed setup. The hardware and software are based on low-cost devices and can be modified to suit different control systems. The details of the implementation are available on a free online repository.

关键词： Discrete-Event Systems Supervisory control Deception attacks Networked Control

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Manipulating Fano coupling in an opto-thermoelectric field

arXiv

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arXiv 2024年

作者： Lin, Linhan Lepeshov, Sergey Krasnok, Alex Huang, Yu Jiang, Taizhi Peng, Xiaolei Korgel, Brian A. Alu, Andrea Zheng, Yuebing State Key Laboratory of Precision Measurement Technology and Instruments Department of Precision Instrument Tsinghua University Beijing100084 China Department of Electrical and Photonics Engineering DTU Electro Technical University of Denmark Building 343 Kgs. LyngbyDK-2800 Denmark Department of Electrical and Computer Engineering Florida International University MiamiFL33174 United States School of Physics and Electronics Hunan University Changsha410082 China Mc Ketta Department of Chemical Engineering The University of Texas at Austin AustinTX78712 United States Materials Science & Engineering Program Texas Materials Institute The University of Texas at Austin AustinTX78712 United States Department of Electrical and Computer Engineering The University of Texas at Austin AustinTX78712 United States Advanced Science Research Center City University of New York New YorkNY10031 United States Physics Program Graduate Center City University of New York NY10016 United States Walker Department of Mechanical Engineering The University of Texas at Austin AustinTX78712 United States

Fano resonances in photonics arise from the coupling and interference between two resonant modes in structures with broken symmetry. They feature an uneven and narrow and tunable lineshape, and are ideally suited for optical spectroscopy. Many Fano resonance structures have been suggested in nanophotonics over the last ten years, but reconfigurability and tailored design remain challenging. Herein, we propose an all-optical "pick-and-place" approach aimed at assemble Fano metamolecules of various geometries and compositions in a reconfigurable manner. We study their coupling behavior by in-situ dark-field scattering spectroscopy. Driven by a light-directed opto-thermoelectric field, silicon nanoparticles with high quality-factor Mie resonances (discrete states) and low-loss BaTiO3 nanoparticles (continuum states) are assembled into all-dielectric heterodimers, where distinct Fano resonances are observed. The Fano parameter can be adjusted by changing the resonant frequency of the discrete states or the light polarization. We also show tunable coupling strength and multiple Fano resonances by altering the number of continuum states and discrete states in dielectric heterooligomers. Our work offers a general design rule for Fano resonance and an all-optical platform for controlling Fano coupling on demand. Copyright © 2024, The Authors. All rights reserved.

关键词： Light polarization

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On dc-Link Capacitor Reliability in Photovoltaic Inverters with Harmonic Current Compensation

On dc-Link Capacitor Reliability in Photovoltaic Inverters w...

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IEEE Annual Southern Power electronics Conference (SPEC)

作者： Rodrigo Cassio De Barros Renata Oliveira De Sousa William Caires Silva Amorim Allan Fagner Cupertino Heverton Augusto Pereira Centro de Ciências Exatas e Tecnológicas Universidade Federal do Recôncavo da Bahia Cruz das Almas Bahia Department of Electronics Universidade Tecnológica Federal do Paraná Paraná Brasil Graduate Program in Electrical Eng. Universidade Federal de Minas Gerais Minas Gerais Brasil Department of Electrical Energy Universidade Federal de Juiz de Fora Juiz de Fora Brazil Department of Electrical Engineering Universidade Federal de Viçosa Viçosa Brazil

Photovoltaic (PV) inverters can provide ancillary services to the electrical grid, such as harmonic current compensation (HCC), reactive power injection, power smoothing and frequency regulation. Even though this extra functionality can improve the grid power quality, the reliability of the power electronics components of the PV inverter can be affected. Some studies performed further analysis in the semiconductor devices operating as HCC. However, there is a lack in the literature exploring the HCC effect in the dc-link capacitors. Thus, the main objective of this work is perform a further analysis in the HCC operation effects on the dc-link capacitor. The influences of the harmonic order, amplitude and phase angles on the dc-link capacitor are explored. In addition, thermal experimental results of the dc-link capacitor temperatures are performed to evidence the simulation results. Based on the results obtained in this work, the HCC affects the dc-link capacitor power losses and lifetime consumption. The harmonic order directly affects the dc-link power losses and it is higher when the 5 th and 7 th harmonic orders are compensated simultaneously. In addition, the compensation of 7 th harmonic order presents higher power losses than the 5 th harmonic component. It was also observed that harmonic phase-angle does not present significant effect in the dc-link capacitor power losses.

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