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Passivation-based Control Reconfiguration with Virtual Actuators

IFAC-PapersOnLine 2022年第6期55卷 698-703页

作者： Iury Bessa Vicenç Puig Reinaldo Martínez Palhares Federal University of Amazonas Department of Electricity Manaus Brazil Federal University of Minas Gerais Graduate Program in Electrical Engineering Brazil Supervision Safety and Automatic Control Research Center (CS2AC) Institut de Robótica i Informática Industrial (CSIC-UPC) Universitat Politécnica de Catalunya Barcelona Spain Federal University of Minas Gerais Department of Electronics Engineering Belo Horizonte Brazil

This paper presents a novel approach for designing reconfiguration blocks for fault hiding of linear systems subject to actuator faults based on the passivity/dissipativity theory. For this purpose, the concept of passivation block is used to design virtual actuators (VAs) which guarantee that the faulty plant achieves the desired passivity indices and consequently the stability. Linear matrix inequalities (LMI)-based conditions are provided for designing the proposed VAs for ensuring the stability recovery for linear systems. Finally, a numerical example is used for assessing the proposed approach.

关键词： Fault tolerant control Reconfiguration Block Fault hiding Dissipativity Passivity

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Improved ISFET readout circuit: Characterization and comparison 4

Improved ISFET readout circuit: Characterization and compari...

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4th International Symposium on Instrumentation Systems, Circuits and Transducers, INSCIT 2019

作者： De Castro, Luis Smith Oliveira De Moraes Cruz, Carlos Augusto Cardoso, Valtemar Fernandes Da Silva, Luciano Lourenco F. Pelegrini, Marcus Vinicius Marques, Greicy Costa Graduate Program in Electrical Engineering Department of Electronics and Computation Federal Federal University of Amazonas Manaus AM Brazil Senai Institute of Innovation in Microelectronics Manaus AM Brazil Department of Electronics and Computation Federal University of Amazonas Manaus AM Brazil

ISBN: (纸本)9781728121093

An improved readout circuit topology for Ion Sensitive Field Effect Transistor (ISFET) is presented in this work. The proposed circuit is derived from two circuits presented in the literature: CIMP (Complementary ISFET-MOSFET Pair) with gate feedback and AIS (Active ISFET Sensor) readouts. In order to assert the improvements concerning sensitivity and stability, the proposed circuit behavior is compared against three other related circuits previously presented in the literature. BSIM3v3 and ISFET macromodel SPICE simulations results show that the proposed circuits present improved in sensitivity, linearity and stability when compared with classical circuits. All circuits were simulated using transistors in O.35f.1m CMOS technology. © 2019 IEEE.

关键词： Timing circuits

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Near-Unity Emitting, Widely Tailorable and Stable Exciton Concentrators Built from Doubly Gradient 2D Semiconductor Nanoplatelets

arXiv

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arXiv 2023年

作者： Liang, Xiao Durmusoglu, Emek G. Lunina, Maria Hernandez-Martinez, Pedro Ludwig Valuckas, Vytautas Yan, Fei Lekina, Yulia Sharma, Vijay Kumar Yin, Tingting Ha, Son Tung Shen, Ze Xiang Sun, Handong Kuznetsov, Arseniy Demir, Hilmi Volkan LUMINOUS Center of Excellence for Semiconductor Lighting and Displays The Photonics Institute School of Electrical and Electronic Engineering Nanyang Technological University Singapore639798 Singapore Division of Physics and Applied Physics School of Physical and Mathematical Sciences Nanyang Technological University Singapore637371 Singapore Interdisciplinary Graduate Program Nanyang Technological University Singapore637371 Singapore 2 Fusionopolis Way #08-03 Innovis 138634 Singapore UNAM-Institute of Materials Science and Nanotechnology The National Nanotechnology Research Center Department of Electrical and Electronics Engineering Department of Physics Bilkent University Bilkent Ankara06800 Turkey

The strength of electrostatic interactions (EI) between electrons and holes within semiconductor nanocrystals profoundly impact the performance of their optoelectronic systems, and different optoelectronic devices demand distinct EI strength of the active medium. However, achieving a broad range, fine-tuning of the EI strength for specific optoelectronic applications is a daunting challenge, especially in quasi 2-dimensional core-shell semiconductor nanoplatelets (NPLs), as the epitaxial growth of the inorganic shell along the direction of the thickness that solely contributes to the quantum confined effect significantly undermines the strength of the EI. Herein we propose and demonstrate a novel doubly-gradient (DG) core-shell architecture of semiconductor NPLs for on-demand tailoring of the EI strength by controlling the localized exciton concentration via in-plane architectural modulation, demonstrated by a wide tuning of radiative recombination rate and exciton binding energy. Moreover, these exciton-concentration-engineered DG NPLs also exhibit a near-unity quantum yield, remarkable thermal and photo stability, as well as considerably suppressed self-absorption. As proof-of-concept demonstrations, highly efficient color converters and high-performance light-emitting diodes (external quantum efficiency: 16.9%, maximum luminance: 43, 000 cd/m2) have been achieved based on the DG NPLs. This work thus opens up new avenues for developing high-performance colloidal optoelectronic device applications. Copyright © 2023, The Authors. All rights reserved.

关键词： Quantum yield

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Application of Deep Artificial Neural Network to Model Characteristic Fluctuation of Multi-Channel Gate-All-Around Silicon Nanosheet and Nanofin MOSFETs Induced by Random Nanosized Metal Grains

Application of Deep Artificial Neural Network to Model Chara...

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IEEE Electron Devices Technology and Manufacturing Conference (EDTM)

作者： Sagarika Dash Yiming Li Wen-Li Sung Parallel and Scientific Computing Laboratory National Yang-Ming Chiao Tung University Hsinchu Taiwan Electrical Engineering and Computer Science International Graduate Program National Yang-Ming Chiao Tung University Hsinchu Taiwan Institute of Communications Engineering National Yang-Ming Chiao Tung University Hsinchu Taiwan Department of Electronics and Electrical Engineering National Yang-Ming Chiao Tung University Hsinchu Taiwan Institute of Biomedical Engineering National Yang-Ming Chiao Tung University Hsinchu Taiwan Center for mm Wave Smart Radar System and Technologies National Yang-Ming Chiao Tung University Hsinchu Taiwan

In this work, we propose a deep artificial neural network (D-ANN) to estimate the work function fluctuation (WKF) on 4-channel stacked gate-all-around (GAA) silicon (Si) nanosheet (NS) and nanofin (NF) MOSFET devices for the first time. The 2-layered simple deep model can well predict the transfer characteristics for both NS/NF FET with a large number of (128) input features, utilizing considerably lesser (1100 samples) data uniformly. The resultant model is evaluated by the $\mathrm{R}^{2}$ score and RMSE to witness its competency and the average error is $< 4\%$ . We do also discuss the circuit simulation possibility by applying the ANN approach.

关键词： Semiconductor device modeling MOSFET Gallium arsenide Artificial neural networks Predictive models Logic gates Silicon

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Vacuum Ultraviolet Light-Generating Metalens

Vacuum Ultraviolet Light-Generating Metalens

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Pacific Rim Conference on Lasers and Electro-Optics (CLEO/Pacific Rim)

作者： Ming Lun Tseng Michael Semmlinger Ming Zhang Catherine Arndt Tzu-Ting Huang Jian Yang Hsin Yu Kuo Vin-Cent Su Mu Ku Chen Cheng Hung Chu Benjamin Cerjan Din Ping Tsai Peter Nordlander Naomi J. Halas Institute of Electronics National Yang Ming Chiao Tung University Hsinchu Taiwan Research Center for Applied Sciences Academia Sinica Taipei Taiwan Department of Electrical and Computer Engineering Rice University Houston Texas USA Laboratory for Nanophotonics Rice University Houston Texas USA Applied Physics Graduate Program Rice University Houston Texas USA Department of Physics and Astronomy Rice University Houston Texas USA Department of Physics National Taiwan University Taipei Taiwan Department of Electrical Engineering National United University Miaoli Taiwan Department of Electrical Engineering City University of Hong Kong Kowloon Hong Kong Department of Chemistry Rice University Houston Texas USA

Vacuum ultraviolet (VUV) light is of great importance to many applications such as photochemistry and nanolithography. In this talk, a nonlinear metalens composed of ZnO nanoantennas for VUV generation and focusing wi...

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Reachability Analysis of Nonlinear Discrete-Time Systems Using Polyhedral Relaxations and Constrained Zonotopes

arXiv

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arXiv 2025年

作者： Rego, Brenner S. Raffo, Guilherme V. Terra, Marco H. Scott, Joseph K. Department of Chemical and Biomolecular Engineering Georgia Institute of Technology 311 Ferst Dr. AtlantaGA30318 United States Department of Electrical and Computer Engineering University of São Paulo SP São Carlos13566-590 Brazil Department of Electronics Engineering the Graduate Program in Electrical Engineering Federal University of Minas Gerais MG Belo Horizonte31270-901 Brazil

This paper presents a novel algorithm for reachability analysis of nonlinear discrete-time systems. The proposed method combines constrained zonotopes (CZs) with polyhedral relaxations of factorable representations of nonlinear functions to propagate CZs through nonlinear functions, which is normally done using conservative linearization techniques. The new propagation method provides better approximations than those resulting from linearization procedures, leading to significant improvements in the computation of reachable sets in comparison to other CZ methods from the literature. Numerical examples highlight the advantages of the proposed algorithm. © 2025, CC BY-NC-ND.

关键词： Numerical methods

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Investigation of Different Membrane Materials Effects in CMUT Membrane Behaviour 3

Investigation of Different Membrane Materials Effects in CMU...

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3rd International Symposium on Multidisciplinary Studies and Innovative Technologies, ISMSIT 2019

作者： Yasar, Abdullah Irfan Yildiz, Fikret TOBB University Biomedical Engineering Graduate Program Ankara Turkey Hakkari University Electrical and Electronics Engineering Department Hakkari Turkey

ISBN: (纸本)9781728137896

Research on Capacitive Micromachined Ultrasonic Transducers (CMUT), which is MEMS-based new transducer technology compared to piezoelectric in ultrasound applications, has recently increased. It is an important fact that micro and nano technologies provide convenience in many areas. CMUT technology has many advantages, such as its small size, the ease of integration with electronic materials and its compatibility with 2-dimensional geometries. In this study, the effect of different membrane material properties on displacement and output pressure of the CMUT membrane was investigated by assuming that it works in CMUT transmission mode and in the water media. SiC, Si, diamond, Si3N4, and polysilicon were used as membrane material. The membrane radius and thickness were selected as 60 μm and 2.6 μm, respectively. Collapse voltage and impedance values were calculated according to the structural properties of these materials. In addition, the mechanical structure of CMUT was taken into consideration and modeling was performed. Using this model created in the SIMULINK, the displacement and output pressure of CMUT membrane under various DC and AC voltages were analyzed. Under the same DC voltage, silicon membrane had the highest displacement and diamond membrane had the lowest displacement. Square shape wave was used as the AC excitation signal because the square wave was more efficient than the others. Some properties of the AC signal were changed and their effects were investigated. The most suitable material and working environment were tried to be found. Moreover, Si3Ni4 membrane behavior also investigated under different electric field to understand effects of electrode size using same model in air. As a result, this study aims to contribute to efficient CMUT design and determination of optimum parameters and membrane material selection for various applications in the immersion and air. © 2019 IEEE.

关键词： Silicon carbide

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Smart photonic wristband for pulse wave monitoring

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Opto-Electronic Science 2024年第12期3卷 12-27页

作者： Renfei Kuang Zhuo Wang Lin Ma Heng Wang Qingming Chen Arnaldo Leal Junior Santosh Kumar Xiaoli Li Carlos Marques Rui Min Center for Cognition and Neuroergonomics State Key Laboratory of Cognitive Neuroscience and LearningBeijing Normal UniversityZhuhai 519087China College of Science Shenyang Aerospace UniversityShenyang 110136China School of Microelectronics Science and Technology Guangdong Provincial Key Laboratory of Optoelectronic Information Processing Chips and SystemsSun Yat-Sen UniversityZhuhai 519082China Graduate Program in Electrical Engineering Federal University of Espírito SantoFernando Ferrari AvenueVitoria 29075-910Brazil Department of Electronics and Communication Engineering Koneru Lakshmaiah Education FoundationVaddeswaramAndhra Pradesh 522302India CICECO-Aveiro Institute of Materials Physics DepartmentUniversity of AveiroAveiro 3810-193Portugal

Real-time acquisition of human pulse signals in daily life is clinically important for cardiovascular disease monitoring and ***,we propose a smart photonic wristband for pulse signal monitoring based on speckle pattern analysis with a polymer optical fiber(POF)integrated into a sports *** different speckle pattern processing algorithms and POFs with different core diameters were *** results indicated that the smart photonic wristband had a high signal-to-noise ratio and low latency,with the measurement error controlled at approximately 3.7%.This optimized pulse signal could be used for further medical diagnosis and was capable of objectively monitoring subtle pulse signal changes,such as the pulse waveform at different positions of Cunkou and pulse waveforms before and after *** the assistance of artificial intelligence(AI),functions such as gesture recognition have been realized through the established prediction model by processing pulse signals,in which the recognition accuracy reaches 95%.Our AI-assisted smart photonic wristband has potential applications for clinical treatment of cardiovascular diseases and home monitoring,paving the way for medical Internet of Things-enabled smart systems.

关键词： smart healthcare specklegram pulse monitoring gesture recognition artificial intelligence wearable sensor

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Set-based state estimation and fault diagnosis of linear discrete-time descriptor systems using constrained zonotopes ⁎

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IFAC-PapersOnLine 2020年第2期53卷 4291-4296页

作者： Brenner S. Rego Davide M. Raimondo Guilherme V. Raffo Graduate Program in Electrical Engineering Federal University of Minas Gerais Belo Horizonte Brazil Department of Electrical Computer and Biomedical Engineering University of Pavia Pavia Italy Department of Electronics Engineering Federal University of Minas Gerais Belo Horizonte Brazil

This paper presents new methods for set-valued state estimation and active fault diagnosis of linear descriptor systems. The algorithms are based on constrained zonotopes, a generalization of zonotopes capable of describing strongly asymmetric convex sets, while retaining the computational advantages of zonotopes. Additionally, unlike other set representations like intervals, zonotopes, ellipsoids, paralletopes, among others, linear static constraints on the state variables, typical of descriptor systems, can be directly incorporated in the mathematical description of constrained zonotopes. Therefore, the proposed methods lead to more accurate results in state estimation in comparison to existing methods based on the previous sets without requiring rank assumptions on the structure of the descriptor system and with a fair trade-off between accuracy and efficiency. These advantages are highlighted in two numerical examples.

关键词： Set-based estimation fault diagnosis constrained zonotopes descriptor systems

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Development of a Selective Wet-Chemical Etchant for 3D Structuring of Silicon via Nonlinear Laser Lithography

arXiv

引用

arXiv 2023年

作者： Borra, Mona Zolfaghari Radfar, Behrad Nasser, Hisham Çolakoğlu, Tahir Tokel, Onur Turnalı, Ahmet Demirtaş, Merve Ustunel, Hande Toffoli, Daniele Ömer İlday, F. Turan, Raşit Pavlov, Ihor Bek, Alpan ODTÜ-GÜNAM Middle East Technical University Ankara06800 Turkey Ankara06800 Turkey Department of Electronics and Nanoengineering Aalto University Tietotie 3 EspooFI-02150 Finland Department of Physics Engineering Ankara University Ankara06100 Turkey Department of Physics Bilkent University Ankara06800 Turkey UNAM National Nanotechnology Research Center Institute of Materials Science and Nanotechnology Bilkent University Ankara06800 Turkey Department of Electrical and Electronics Engineering Bilkent University Ankara06800 Turkey Department of Electrical and Computer Engineering Boston University 8 Saint Mary’s Street BostonMA02215 United States Ankara06800 Turkey Network Technologies Department TUBITAK ULAKBIM Ankara06800 Turkey Department of Chemical and Pharmaceutical Sciences Trieste University Trieste Italy IOM-CNR Istituto Officina dei Materiali Trieste34149 Italy Micro and Nanotechnology Graduate Program of Natural and Applied Sciences Middle East Technical Turkey

Recently-demonstrated high-quality three-dimensional (3D) subsurface laser processing inside crystalline silicon (c-Si) wafers opens a door to a wide range of novel applications in multidisciplinary research areas. Using this technique, a novel maskless micro-pillars with precise control on the surface reflection and coverage are successfully fabricated by etching the laser processed region of c-Si wafer. To achieve this, a particular selective wet chemical etching is developed to follow subsurface laser processing of c-Si to reveal the desired 3D structures with smooth surfaces. Here, we report the development of a novel chromium-free chemical etching recipe based on copper nitrate, which yields substantially smooth surfaces at high etch rate and selectivity on the both laser-processed Si surface and subsurface, i.e., without significant etching of the unmodified Si. Our results show that the etch rate and surface morphology are interrelated and strongly influenced by the composition of the adopted etching solution. After an extensive compositional study performed at room temperature, we identify an etchant with a selectivity of over 1600 times for laser-modified Si with respect to unmodified Si. We also support our findings using density functional theory calculations of HF and Cu adsorption energies, indicating significant diversity on the c-Si and laser-modified surfaces. Copyright © 2023, The Authors. All rights reserved.

关键词： Morphology

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