检索结果-内蒙古大学图书馆

arXiv 2021年

作者： Du, Hongyang Niyato, Dusit Kang, Jiawen Kim, Dong In Miao, Chunyan The School of Computer Science and Engineering The Energy Research Institute NTU Interdisciplinary Graduate Program Nanyang Technological University Singapore The School of Computer Science and Engineering Nanyang Technological University Singapore The School of of Automation Guangdong University of Technology China The Department of Electrical and Computer Engineering Sungkyunkwan University Suwon16419 Korea Republic of

Recently, Metaverse has attracted increasing attention from both industry and academia, because of the significant potential to integrate real and digital worlds ever more seamlessly. By combining advanced wireless communications, edge computing and virtual reality (VR) technologies into Metaverse, a multidimensional, intelligent and powerful wireless edge Metaverse is created for future human society. In this paper, we design a privacy preserving targeted advertising strategy for the wireless edge Metaverse. Specifically, a Metaverse service provider (MSP) allocates bandwidth to the VR users so that the users can access Metaverse from edge access points. To protect users’ privacy, the covert communication technique is used in the downlink. Then, the MSP can offer high-quality access services to earn more profits. Motivated by the concept of "covert", targeted advertising is used to promote the sale of bandwidth and ensure that the advertising strategy cannot be detected by competitors who may make counter-offer and by attackers who want to disrupt the services. We derive the best advertising strategy in terms of budget input, with the help of the Vidale-Wolfe model and Hamiltonian function. Furthermore, we propose a novel metric named Meta-Immersion to represent the user’s experience feelings. The performance evaluation shows that the MSP can boost its revenue with an optimal targeted advertising strategy, especially compared with that without the advertising. © 2021, CC BY.

关键词： Bandwidth

来源：评论

学校读者我要写书评

暂无评论

Guiding Brain-to-Vocalization Decoder Design Using Structured Generalization Error

Guiding Brain-to-Vocalization Decoder Design Using Structure...

引用

Annual International Conference of the IEEE engineering in Medicine and Biology Society (EMBC)

作者： Jingya Huang Pablo Tostado-Marcos Sowmya Manojna Narasimha Aashish N. Patel Ezequiel. M. Arneodo Timothy Q. Gentner Gal Mishne Vikash Gilja Department of Electrical and Computer Engineering University of California San Diego CA Department of Bioengineering University of California San Diego CA Institute for Neural Computation University of California San Diego CA Neuroscience Graduate Program University of California San Diego CA Department of Physics University of California San Diego CA Department of Psychology University of California San Diego CA Halıcıoğlu Data Science Institute University of California San Diego CA

ISBN: (数字)9798350371499

ISBN: (纸本)9798350371505

State-of-the-art intracortical neuroprostheses currently enable communication at 60+ words per minute for anarthric individuals by training on over 10K sentences to account for phoneme variability in different word contexts. There is limited understanding about whether this performance can be maintained in decoding naturalistic speech with 40K+ word vocabularies across elicited, spontaneous, and conversational speech contexts. We introduce a vocal-unit-level generalization test to explicitly evaluate neural decoder performance with an expanded and more diverse behavioral repertoire. Tested on neural decoders modeling zebra finch vocalization, an analog to human vocal production, we compare three decoders with different input types: spike trains, neural factors, and firing rates. The factors and rates are latent neural features inferred using trained Latent Factor Analysis via Dynamical Systems (LFADS) models that capture the population neural dynamics during vocal production. While the conventional random holdout generalization error measure is similar for all three decoders, factor- and rate-based decoders outperform spike-based decoders when testing vocal-unit-holdout generalization error. These results suggest the later models better adapt to flexible vocalization inference when trained with partial observation of data variation, motivating further exploration of decoders incorporating latent neural and vocalization dynamics.

关键词： Training Adaptation models Vocabulary Firing Measurement uncertainty Neuroprostheses Production Decoding engineering in medicine and biology Testing

来源：评论

学校读者我要写书评

暂无评论

Concealed drug detection via fan beam coded-aperture X-ray diffraction imaging 6

Concealed drug detection via fan beam coded-aperture X-ray d...

引用

Anomaly Detection and Imaging with X-Rays (ADIX) VI 2021

作者： Greenberg, Joel A. Stryker, Stefan Carpenter, Josh Kapadia, Anuj J. Department of Electrical and Computer Engineering Duke University DurhamNC27708 United States Medical Physics Graduate Program Duke University DurhamNC27708 United States Carl E. Ravin Advanced Imaging Laboratories Dept. of Radiology Duke University DurhamNC27708 United States Quadridox Inc. HillsboroughNC27278 United States

ISBN: (数字)9781510643147

ISBN: (纸本)9781510643130

Detecting illegal drugs in packages without opening the package is a challenge. X-ray diffraction tomography offers the potential capability of uniquely identifying illegal drugs within a package based on their atomic structure. To understand the potential for XRD-based drug detection, we developed a method for building a library of X-ray diffraction drug signatures. In addition, we used a compact, multi-modality fan beam X-ray imaging system (combining transmission and X-ray diffraction) to distinguish oxycodone from non-prescription medicine when concealed within different types of containment. © 2021 SPIE.

关键词： X ray diffraction

来源：评论

学校读者我要写书评

暂无评论

Application of Deep Artificial Neural Network to Model Characteristic Fluctuation of Multi-Channel Gate-All-Around Silicon Nanosheet and Nanofin MOSFETs Induced by Random Nanosized Metal Grains

Application of Deep Artificial Neural Network to Model Chara...

引用

IEEE Electron Devices Technology and Manufacturing Conference (EDTM)

作者： Sagarika Dash Yiming Li Wen-Li Sung Parallel and Scientific Computing Laboratory National Yang-Ming Chiao Tung University Hsinchu Taiwan Electrical Engineering and Computer Science International Graduate Program National Yang-Ming Chiao Tung University Hsinchu Taiwan Institute of Communications Engineering National Yang-Ming Chiao Tung University Hsinchu Taiwan Department of Electronics and Electrical Engineering National Yang-Ming Chiao Tung University Hsinchu Taiwan Institute of Biomedical Engineering National Yang-Ming Chiao Tung University Hsinchu Taiwan Center for mm Wave Smart Radar System and Technologies National Yang-Ming Chiao Tung University Hsinchu Taiwan

In this work, we propose a deep artificial neural network (D-ANN) to estimate the work function fluctuation (WKF) on 4-channel stacked gate-all-around (GAA) silicon (Si) nanosheet (NS) and nanofin (NF) MOSFET devices for the first time. The 2-layered simple deep model can well predict the transfer characteristics for both NS/NF FET with a large number of (128) input features, utilizing considerably lesser (1100 samples) data uniformly. The resultant model is evaluated by the $\mathrm{R}^{2}$ score and RMSE to witness its competency and the average error is $< 4\%$ . We do also discuss the circuit simulation possibility by applying the ANN approach.

关键词： Semiconductor device modeling MOSFET Gallium arsenide Artificial neural networks Predictive models Logic gates Silicon

来源：评论

学校读者我要写书评

暂无评论

Landau Polaritons in a Full-Dielectric Three-Dimensional Photonic-Crystal Cavity

Landau Polaritons in a Full-Dielectric Three-Dimensional Pho...

引用

CLEO: Science and Innovations, S and I 2022

作者： Tay, Fuyang Mojibpour, Ali Liang, Shuang Baydin, Andrey Ahmadivand, Arash Peraca, Nicolas Marquez Xu, Hongjing Gardner, Geoff C. Manfra, Michael J. Hagenmüller, David Kono, Junichiro Department of Electrical and Computer Engineering Rice University HoustonTX77005 United States Applied Physics Graduate Program Smalley-Curl Institute Rice University HoustonTX77005 United States Department of Physics and Astronomy Purdue University West LafayetteIN47907 United States Birck Nanotechnology Center Purdue University West LafayetteIN47907 United States Smalley-Curl Institute Rice University HoustonTX77005 United States Department of Physics and Astronomy Rice University HoustonTX77005 United States Microsoft Quantum Purdue Purdue University West LafayetteIN47907 United States School of Electrical and Computer Engineering Purdue University West LafayetteIN47907 United States School of Materials Engineering Purdue University West LafayetteIN47907 United States Université de Strasbourg CNRS Strasbourg67000 France Department of Materials Science and NanoEngineering Rice University HoustonTX77005 United States

ISBN: (纸本)9781557528209

We fabricated a full-dielectric three-dimensional photonic-crystal cavity containing an ultrahigh-mobility two-dimensional electron gas. By applying a strong perpendicular magnetic field, we created Landau polaritons originating from the ultrastrong coupling of electrons with cavity modes. © Optica Publishing Group 2022, © 2022 The Author(s)

关键词： Polariton

来源：评论

学校读者我要写书评

暂无评论

Histogram specification by assignment of optimal unique values

arXiv

引用

arXiv 2021年

作者： Ramos, Vítor S. de Q. Silveira, Luiz Felipe de Q. Silveira Júnior, Luiz Gonzaga Electrical and Computer Engineering Graduate Program Federal University of Rio Grande do Norte Natal Brazil Computer Engineering and Automation Department Federal University of Rio Grande do Norte Natal Brazil Communications Engineering Department Federal University of Rio Grande do Norte Natal Brazil

In this paper, we propose two novel algorithms for histogram specification and quantile transformation of data without local information. These are core techniques that can serve as building blocks for applications that require specifying the sample distribution of a given set of data. Histogram specification is best known for its image enhancement applications, whereas quantile transformation is typically employed in data preprocessing for data normalization. In signal processing, methods often require temporal or spatial information;in data preprocessing, methods work by interpolation or by approximation, drawing from results in computational statistics, and have a trade-off between speed and quality. It is nontrivial to accommodate for cases that do not have local information (e.g., tabular data) while also providing a fast, exact solution. For that, we take up a concept in image processing called group mapping law and propose an extension. The proposed extension allows us to formulate a convex functional where we look for the best approximation between the output unique values and the reference histogram. Then, we apply the ordered assignment solution, a result in optimal transport, to reconstruct the output from the optimal unique values. Two sets of results show the effectiveness of the proposed algorithms when compared to traditional and state-of-the-art methods. The proposed algorithms are fast, exact, and least p-norm optimal. Further, we define the algorithms as generic data processing methods. Thus, contributions from this paper can be easily incorporated in applications spanning many disciplines, especially in applied data science. Copyright © 2021, The Authors. All rights reserved.

关键词： Graphic methods

来源：评论

学校读者我要写书评

暂无评论

Scaling Limitations of Line TFETs at Sub-8-nm Technology Node

Scaling Limitations of Line TFETs at Sub-8-nm Technology Nod...

引用

2020 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2020

作者： Thoti, Narasimhulu Li, Yiming Kola, Sekhar Reddy Parallel and Scientific Computing Laboratory Eecs International Graduate Program Institute of Communications Engineering Department of Electrical and Computer Engineering Center for MmWave Smart Radar System and Technologies National Chiao Tung University 1001 Ta-Hsueh Rd Hsinchu300 Taiwan

ISBN: (纸本)9781728142326

The scope of the work is to investigate limitations in device scaling by identifying various parameters of short channel effects (SCEs) in current challenging geometries of the line tunnel field effect transistors (TFETs). Key factors of the considered device, such as the doping and the thickness (tn) of n-epitaxial region, and source-to-drain length (LSDeff) scaling cannot be tuned anymore to boost the device characteristics for the sub-8-nm technology node. The main results of this study indicates that the engineering acceptable performance are achieved at a low doping of 5 1018 cm-3, an optimal tn as low (about 0.5 nm), and a LSDeff greater than 12.5 nm. Hence, the line TFETs below sub-8-nm faces serious bottleneck of scaling and cannot be further scaled with the conventional scaling rule at all. © 2020 IEEE.

关键词： Tunnel field effect transistors

来源：评论

学校读者我要写书评

暂无评论

Analysis of Negative Capacitance MOSFETs Characteristic with Spacer

Analysis of Negative Capacitance MOSFETs Characteristic with...

引用

2020 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2020

作者： Lee, Yu-Chun Kola, Sekhar Reddy Chen, Chieh-Yang Chuang, Min-Hui Li, Yiming Parallel and Scientific Computing Laboratory Institute of Biomedical Engineering Institute of Communications Engineering Eecs International Graduate Program Department of Electrical and Computer Engineering Center for MmWave Smart Radar System and Technologies National Chiao Tung University 1001 Ta-Hsueh Rd Hsinchu300 Taiwan

ISBN: (纸本)9781728142326

In this work, our study comprises of design and investigation on negative capacitance (NC), metal-oxide-semiconductor (MOS) field effects transistors (MOSFETs) with spacer and source/drain (S/D) overlap engineering. The scope of the work is to boost the performance and high-energy efficiency of the studied NC-MOSFETs by using the ferro electric material (FE). The NC-MOSFETs with the spacer technology can achieve the admirable Ion/Ioff ratio and subthreshold swing (SS), compared with planar MOSFETs. It makes device scaling possible by eliminating the short channel effect (SCE). We further estimated the effect of FE thickness and spacer, which are another critical parameter of obtaining better electrical characteristics and reducing SS. © 2020 IEEE.

关键词： Capacitance

来源：评论

学校读者我要写书评

暂无评论

Ultrastrong Spin-Photon Coupling in Gadolinium Gallium Garnet

Ultrastrong Spin-Photon Coupling in Gadolinium Gallium Garne...

引用

2023 Conference on Lasers and Electro-Optics, CLEO 2023

作者： Kritzell, T. Elijah Bao, Junzhe Doumani, Jacques Lee, Jae Joon Xu, Hongjing Tay, Fuyang Nojiri, Hiroyuki Bamba, Motoaki Baydin, Andrey Kono, Junichiro Department of Electrical and Computer Engineering Rice University HoustonTX77005 United States Applied Physics Graduate Program Smalley-Curl Institute Rice University HoustonTX77005 United States Department of Physics and Astronomy Rice University HoustonTX77005 United States Institute for Materials Research Tohoku University Sendai980-8577 Japan The Hakubi Center for Advanced Research Kyoto University Kyoto606-8502 Japan Department of Physics I Kyoto University Kyoto606-8502 Japan Smalley-Curl Institute Rice University HoustonTX77005 United States Department of Material Science and NanoEngineering Rice University HoustonTX77005 United States

We examine ultrastrong coupling of an ensemble of paramagnetic spins in Gd3Ga5O12 with terahertz photons in the presence of a high external magnetic field both in the bulk and thin-film limits. © 2023 The Author(s)

ISBN: (纸本)9781957171258

关键词： Photons

来源：评论

学校读者我要写书评

暂无评论

Reduction of interface defects in gate-recessed GaN HEMTs by neutral beam etching

引用

Materials Today Advances 2024年 23卷

作者： Yu, Chia Hao Chiang, Wei Hsiang Chen, Yi-Ho Samukawa, Seiji Wuu, Dong Sing Chung, Chin-Han Hsiao, Ching-Lien Horng, Ray Hua Institute of Electronics National Yang Ming Chiao Tung University Department of Materials Science and Engineering National Chung Hsing University Graduate Degree Program of College of Electrical and Computer Engineering National Yang Ming Chiao Tung University Institute of Comunications Engineering National Yang Ming Chiao Tung University Department of Applied Materials and Optoelectronic Engineering National Chi Nan University International College of Semiconductor Technology National Yang Ming Chiao Tung University Thin Film Physics Division Department of Physics Chemistry and Biology (IFM) Linköping University

This study investigates and compares the impact of different etching techniques on the fabrication of GaN high electron mobility transistors (HEMTs) between the inductively coupled plasma reactive ion etching (ICP-RIE) and the neutral beam etching (NBE) for the gate recess. By conducting direct current analysis, it was found that devices manufactured using the NBE exhibited superior electrical performance as compared with those produced using the ICP-RIE. These enhanced electrical characteristics include a transconductance of up to 100.4 mS/mm, a threshold voltage (V_th) of −2.3 V, an on/off current ratio of 1.1 × 10⁹, a subthreshold swing (S.S.) of 99.63 mV/dec, and a remarkably low gate leakage current. Additionally, we noted varying degrees of hysteresis in the I–V characteristics were related to process disparities possibly leading to interface defects. Multi-frequency capacitance-voltage (C–V) measurements were used to identify the interface defects at the oxide/AlGaN interface of the gate. The results revealed that devices fabricated using the NBE exhibited a lower interface defect density as compared with those fabricated using the ICP-RIE, thereby elucidating the reduced hysteresis observed in the I–V characteristics. These findings indicated the significant advantages of the NBE process in the fabrication of GaN HEMTs. © 2024 The Authors

关键词： GaN HEMTs Gate recess Interface defects Multi-frequency C–V Neutral beam etching

来源：评论

学校读者我要写书评

暂无评论

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案：

请选择收藏分类：

通借通还

建议与咨询 留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案： 新增检索档案 确定 取消

请选择收藏分类： 新增自定义分类 确定 取消

通借通还

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

请选择保存的检索档案：

请选择收藏分类：