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Superlattice HfO2-ZrO2 based Ferro-Stack HfZrO2 FeFETs: Homogeneous-Domain Merits Ultra-Low Error, Low programming Voltage 4 V and Robust Endurance 109 cycles for Multibit NVM

Superlattice HfO2-ZrO2 based Ferro-Stack HfZrO2 FeFETs: Homo...

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International Electron Devices Meeting (IEDM)

作者： C.-Y. Liao Z.-F. Lou C.-Y. Lin A. Senapati R. Karmakar K.-Y. Hsiang Z.-X. Li W.-C. Ray J.-Y. Lee P.-H. Chen F.-S. Chang H.-H. Tseng C.-C. Wang J.-H. Tsai Y.-T. Tang S. T. Chang C. W. Liu S. Maikap M. H. Lee NTNU Institute and Undergraduate Program of Electro-Optical Engineering Taipei Taiwan Department of Electronic Engineering CGU Taoyuan Taiwan NYCU Institute of Electronics Hsinchu Taiwan Graduate School of Advance Technology NTU Taipei Taiwan Department of Electrical Engineering NTNU Taipei Taiwan Department of Electrical Engineering NCU Taoyuan Taiwan Department of Electrical Engineering NCHU Taichung Taiwan

ISBN: (纸本)9781665489607

Superlattice (SL) HfO 2 -ZrO 2 with physical thickness of 5 nm and low phase fraction ratio 0.101:1 of monoclinic-phase (m-phase) to orthorhombic-phase (o-phase) investigated by geometrical phase analysis (GPA) is demonstrated. The homogeneous and congruous of SL-HfZrO 2 (HZO) with sufficient ferroelectric-domain is integrated as ferro-stack FeFETs for multibit NVM with low |V PG/ER | = 4 V, ultra-low error rate = 7.5×10 -16 , record high 2-bit endurance for 10 9 cycles, and stable data retention > 10 4 s. The device-to-device (D2D) variation of nanoscale 3D FeFETs is also improved with the proposed SL-HZO. The superlattice technique for FE-HZO is a promising concept with elevating the coherence of domain access due to high o-phase toward emerging memory applications.

关键词： Voltage fluctuations Three-dimensional displays Nonvolatile memory Superlattices Switches programming Nanoscale devices

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Statistical Analysis of Intrinsic High-Frequency Characteristic Fluctuation of Emerging Silicon Gate-All-Around Nanosheet (NS) MOSFETs at Sub-3-nm Nodes

Statistical Analysis of Intrinsic High-Frequency Characteris...

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IEEE Electron Devices Technology and Manufacturing Conference (EDTM)

作者： Sekhar Reddy Kola Yiming Li Min-Hui Chuang Kazuhiko Endo Seiji Samukawa Parallel and Scientific Computing Laboratory Electrical Engineering and Computer Science International Graduate Program Institute of Communications Engineering Department of Electronics and Electrical Engineering Institute of Biomedical Engineering Center for mm Wave Smart Radar System and Technologies National Yang Ming Chiao Tung University Hsinchu Taiwan Institute of Fluid Science Tohoku University 2-1-1 Katahira Aoba-ku Sendai Japan National Institute of Advanced Industrial Science and Technology Tsukuba Japan

In recent years, the GAA NS Si MOSFET has been explored as a leading technology. However, the intrinsic parameters of GAA NS Si MOSFETs are affected to varying degrees by various fluctuation sources, Statistically independent and identically distributed $(iid)$ assumptions on the aforementioned random variables overestimate the variability of high-frequency characteristics, compared with considering all fluctuation factors simultaneously. Notably, the random nanosized metal grains dominates the variations of voltage gain, cut-off frequency, and 3dB frequency because the random work functions strongly alter the channel surface potential.

关键词： MOSFET Fluctuations Statistical analysis Gallium arsenide Cutoff frequency Metals Logic gates

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Hot Carrier Injection Reliability of Fabricated N- and P-Type Multi FinFETs with Different TiN Stacks

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ECS Journal of Solid State Science and Technology 2023年第3期12卷 035007-035007页

作者： Chen, Yu-Lin Yeh, Wen-Kuan Hsu, Heng-Tung Chen, Ke-Horng Lin, Wen-Chin Yu, Tien-Han Chou, Hung-Ting Godwin Raj, D. Godfrey, D. International College of Semiconductor Technology National Yang Ming Chiao Tung University Taiwan Graduate Degree Program of College of Electrical and Computer Engineering National Yang Ming Chiao Tung University Taiwan National Applied Research Laboratories Taiwan Institute of Microelectronics National Cheng Kung University Taiwan National Chung-Shan Institute of Science and Technology Taoyuan Taiwan Dept of ECE Amal Jyothi College of Engineering Kerala India Dept of Electronics and Communication Engineering Dayananda Sagar University Bengaluru India

Device degradation due to hot carrier injection (HCI) in multi-fin 20 nm and 10 nm N- and P-type FinFET devices are thoroughly analyzed. To further understand the HCI reliability of the four FinFET devices, the device is fabricated with a standard Vt base and low Vt base gate stacks with different work functions. It is evident that: (i) The standard Vt device sustains lower effective stress bias due to the difference in threshold voltage, resulting in a more stable threshold voltage than the low Vt base device, and (ii) the transconductance of the single N- and P-type FinFET is more severely degraded than the multi-fin N- and P-type FinFET, mainly because multi N- and P-type Finfet has coupe effect, which effectively reduces the impact of HCI. © 2023 The Electrochemical Society ("ECS"). Published on behalf of ECS by IOP Publishing Limited

关键词： FinFET

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Permanent Magnet Synchronous Motor Drive Control for Hybrid Construction Machinery - Revisited

Permanent Magnet Synchronous Motor Drive Control for Hybrid ...

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IEEE Transportation Electrification Conference and Expo (ITEC)

作者： Thiago M. Parreiras Dener A. de L. Brandao Mariana de F. Ramos Thales A. C. Maia Tomás P. Corrêa Igor A. Pires Anderson Nascimento Braz de J. C. Filho Institute of Technological Sciences Universidade Federal de Itaiubá Itabira Brazil Graduate Program in Electrical Engineering Universidade Federal de Minas Gerais Belo Horizonte Brazil Department of Electrical Engineering Universidade Federal de Minas Gerais Belo Horizonte Brazil Department of Electronics Engineering Universidade Federal de Minas Gerais Belo Horizonte Brazil South America Tractor Backhoe Loader CNH Industrial Brasil Contagem Brazil

Hybrid Construction Machinery (HCM) differs from conventional Hybrid Electric Vehicles (HEV) by offering fuel consumption reduction not only in the traction system, but mainly in its hydraulic work implements. Regardless of the type of hybridization considered (series, parallel or series-parallel), Permanent Magnet Synchronous Machines (PMSM) are increasingly consolidating their position as the preferred option. Commercial motor drive systems usually can benefit of some revision in its control system and to take into account some of the specific needs of HCMs. This work revisit the PMSM drive control topic in face of the HCM requirements along with a method for controllers adjust, which is based in the disturbance-output relationship and makes use of feedforward and disturbance decoupling actions. Furthermore, it compares the proposed schemes with the ones used by some commercial products and shows how the they can improve the system disturbance rejection. Simulation and experimental results shows a better speed regulation with the proposed approach.

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SGIRR: Sparse Graph Index Remapping for ReRAM Crossbar Operation Unit and Power Optimization*

SGIRR: Sparse Graph Index Remapping for ReRAM Crossbar Opera...

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IEEE International Conference on Computer-Aided Design

作者： Cheng-Yuan Wang Yao-Wen Chang Yuan-Hao Chang Data Science Degree Program National Taiwan University and Academia Sinica Taipei Taiwan Graduate Institute of Electronics Engineering National Taiwan University Taipei Taiwan Department of Electrical Engineering National Taiwan University Taipei Taiwan Institute of Information Science Academia Sinica Taipei Taiwan

Resistive Random Access Memory (ReRAM) Crossbars are a promising process-in-memory technology to reduce enormous data movement overheads of large-scale graph processing between computation and memory units. ReRAM cells can combine with crossbar arrays to effectively accelerate graph processing, and partitioning ReRAM crossbar arrays into Operation Units (OUs) can further improve computation accuracy of ReRAM crossbars. The operation unit utilization was not optimized in previous work, incurring extra cost. This paper proposes a two-stage algorithm with a crossbar OU-aware scheme for sparse graph index remapping for ReRAM (SGIRR) crossbars, mitigating the influence of graph sparsity. In particular, this paper is the first to consider the given operation unit size with the remapping index algorithm, optimizing the operation unit and power dissipation. Experimental results show that our proposed algorithm reduces the utilization of crossbar OUs by 31.4%, improves the total OU block usage by 10.6%, and saves energy consumption by 17.2%, on average.

关键词： Energy consumption Visualization Resistive RAM Clustering algorithms Benchmark testing Power dissipation Indexes

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Multimodal Spatial Attention Network for Automatic Head and Neck Tumor Segmentation in FDG-PET and CT Images 1

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2nd 3D Head and Neck Tumor Segmentation in PET/CT Challenge, HECKTOR 2021, held in conjunction with 24th International Conference on Medical Image Computing and Computer-Assisted Intervention, MICCAI 2021

作者： Cho, Minjeong Choi, Yujin Hwang, Donghwi Yie, Si Young Kim, Hanvit Lee, Jae Sung School of Electrical and Electronics Engineering Chung-Ang University Seoul06974 Korea Republic of Department of Biomedical Engineering Kyunghee University College of Electronics and Information 1732 Deogyeong-daero Giheung-gu Gyeonggi-do Yongin-si Korea Republic of Department of Nuclear Medicine Seoul National University College of Medicine Seoul03080 Korea Republic of Department of Biomedical Sciences Seoul National University College of Medicine Seoul03080 Korea Republic of Interdisciplinary Program in Bioengineering Seoul National University Graduate School Seoul Korea Republic of Integrated Major in Innovative Medical Science Seoul National University Graduate School Seoul Korea Republic of Ulsan Korea Republic of Artificial Intelligence Institute Seoul National University Seoul08826 Korea Republic of Brightonix Imaging Inc. Seoul04782 Korea Republic of

ISBN: (数字)9783030982539

ISBN: (纸本)9783030982522

Quantitative positron emission tomography/computed tomography (PET/CT), owing to the functional metabolic information and anatomical information of the human body that it presents, is useful to achieve accurate tumor delineation. However, manual annotation of a Volume Of Interest (VOI) is a labor-intensive and time-consuming task. In this study, we automatically segmented the Head and Neck (H&N) primary tumor in combined PET/CT images. Herein, we propose a convolutional neural network named Multimodal Spatial Attention Network (MSA-Net), supplemented with a Spatial Attention Module (SAM), which uses a PET image as an input. We evaluated this model on the MICCAI 2021 HEad and neCK TumOR (HECKTOR) segmentation challenge dataset. Our method delivered a competitive cross-validation efficiency, with Dice Similarity Coefficient (DSC) 0.757, precision 0.788, and recall 0.785. When we tested out method on test dataset, we achieved an average DSC and Hausdorff Distance at 95% (HD95) of 0.766 and 3.155 respectively. Our team name is ‘Heck_Uihak’. © 2022, Springer Nature Switzerland AG.

关键词： Tumors

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Hot Carrier Injection (HCI) Reliability of Fabricated Y-gate HEMT with Various Top Length

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ECS Journal of Solid State Science and Technology 2023年第3期12卷 035001-035001页

作者： Chen, Yu-Lin Yeh, Wen-Kuan Chen, Ke-Horng Hsu, Heng-Tung Hsu, Chin-Tsai Godwin Raj, D. Chou, Hung-Ting Wu, Jui-Sheng Yu, Tien-Han Godfrey, D. Graduate Degree Program of College of Electrical and Computer Engineering National Yang Ming Chiao Tung University Hsinchu Taiwan International College of Semiconductor Technology National Yang Ming Chiao Tung University Hsinchu Taiwan National Applied Research Laboratories Hsinchu Taiwan Dept of ECE Amal Jyothi College of Engineering Kerala India National Chung Shan Institute of Science and Technology Taoyuan Taiwan Deparment of Materials Science and Engineering National Yang Ming Chiao Tung University Hsinchu Taiwan Dept of Electronics and Communication Engineering Dayananda Sagar University Bengaluru India

Device degradation due to hot carrier injection (HCI) in different Y-gate HEMT devices is thoroughly analyzed. To further understand the HCI reliability of the Y-gate HEMT devices, the device is fabricated with AlGaN/GaN structure with different top lengths (Ltop). An HCI stress time of 6000 s was conducted on these devices, while V t stability in other stress time domains, leakage current, and transconductance degradation are also discussed. In this work, we have demonstrated that increasing the LTop length could avoid the virtual gate effect and disperse the influence of the electric field under HCI stress. Furthermore, the effects of trapping in various locations, such as in the bulk SiN or AlGaN/GaN interface has been discussed. These trapping effects caused by the HCI stress might be the source of the Vth shift. Overall, The large Y-gate HEMT showed the lowest degradation of DC characteristics after the long HCI stress test. © 2023 The Electrochemical Society ("ECS"). Published on behalf of ECS by IOP Publishing Limited.

关键词： High electron mobility transistors

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A Novel Method for the Fabrication of Antibacterial Stainless Steel with Uniform Silver Dispersions by Silver Nanoparticle/Polyethyleneimine Composites

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Materials 2023年第10期16卷 3719-3719页

作者： Chih, Yu-Kun You, Jhu-Lin Lin, Wei-Hsuan Chang, Yen-Hao Tseng, Chun-Chieh Ger, Ming-Der Graduate School of Defense Science Chung Cheng Institute of Technology National Defense University Taoyuan335 Taiwan Department of Chemical and Materials Engineering Chung Cheng Institute of Technology National Defense University Taoyuan335 Taiwan System Engineering and Technology Program National Chiao Tung University Hsinchu300 Taiwan Combination Medical Device Technology Division Medical Devices and Opto-Electronics Equipment Department Metal Industries Research & Development Centre Kaohsiung821 Taiwan

Only a few studies have so far focused on the addition of silver to SS316L alloys by conventional sintering methods. Unfortunately, the metallurgical process of silver-containing antimicrobial SS is greatly limited due to the extremely low solubility of silver in iron and its tendency to precipitate at the grain boundaries, resulting in an inhomogeneous distribution of the antimicrobial phase and loss of antimicrobial properties. In this work, we present a novel approach to fabricate antibacterial stainless steel 316L by functional polyethyleneimine-glutaraldehyde copolymer (PEI-co-GA/Ag catalyst) composites. PEI is a highly branched cationic polymer, which makes it exhibit very good adhesion on the surface of the substrate. Unlike the effect of the conventional silver mirror reaction, the introduction of functional polymers can effectively improve the adhesion and distribution of Ag particles on the surface of 316LSS. It can be seen from the SEM images that a large number of silver particles are retained and well dispersed in 316LSS after sintering. PEI-co-GA/Ag 316LSS exhibits excellent antimicrobial properties and does not release free silver ions to affect the surrounding environment. Furthermore, the probable mechanism for the influence of the functional composites on the enhancement of adhesion is also proposed. The formation of a large number of hydrogen bonds and van der Waals forces, as well as the negative zeta potential of the 316LSS surface, can effectively enable the formation of a tight attraction between the Cu layer and the surface of 316LSS. These results meet our expectations of designing passive antimicrobial properties on the contact surface of medical devices. © 2023 by the authors.

关键词： Silver nanoparticles

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The role of input imaging combination and ADC threshold on segmentation of acute ischemic stroke lesion using U-Net

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European Radiology 2023年第9期33卷 6157-6167页

作者： Li, Ya-Hui Lin, Shao-Chieh Chung, Hsiao-Wen Chang, Chia-Ching Peng, Hsu-Hsia Huang, Teng-Yi Shen, Wu-Chung Tsai, Chon-Haw Lo, Yu-Chien Lee, Tung-Yang Juan, Cheng-Hsuan Juan, Cheng-En Chang, Hing-Chiu Liu, Yi-Jui Juan, Chun-Jung Graduate Institute of Biomedical Electronics and Bioinformatics National Taiwan University Taipei Taiwan Department of Medical Imaging China Medical University Hsinchu Hospital No. 199 Sec. 1 Xinglong Rd. Zhubei City Hsinchu County 302 Hsinchu Taiwan Ph.D. Program in Electrical and Communication Engineering Feng Chia University Taichung Taiwan Department of Electrical Engineering National Taiwan University Taipei Taiwan Department of Management Science National Yang Ming Chiao Tung University Hsinchu Taiwan Department of Biomedical Engineering and Environmental Sciences National Tsing Hua University Hsinchu Taiwan Department of Electrical Engineering National Taiwan University of Science and Technology Taipei Taiwan Department of Radiology School of Medicine College of Medicine China Medical University Taichung Taiwan Department of Medical Imaging Medical University Hospital Taichung Taiwan Department of Neurology China Medical University Hospital Taichung Taiwan Cheng Ching Hospital Taichung Taiwan Master’s Program of Biomedical Informatics and Biomedical Engineering Feng Chia University Taichung Taiwan Department of Automatic Control Engineering Feng Chia University No. 100 Wenhwa Rd. Seatwen Taichung 40724 Taiwan Department of Biomedical Engineering The Chinese University of Hong Kong ERB1112 11/F William M.W. Mong Engineering Building N.T Shatin Hong Kong Multi-Scale Medical Robotics Center The Chinese University of Hong Kong N.T Shatin Hong Kong Department of Biomedical Engineering National Defense Medical Center Taipei Taiwan Department of Computer Science and Information Engineering National Taiwan University Taipei Taiwan

Background: To evaluate the effect of the weighting of input imaging combo and ADC threshold on the performance of the U-Net and to find an optimized input imaging combo and ADC threshold in segmenting acute ischemic stroke (AIS) lesion. Methods: This study retrospectively enrolled a total of 212 patients having AIS. Four combos, including ADC-ADC-ADC (AAA), DWI-ADC-ADC (DAA), DWI-DWI-ADC (DDA), and DWI-DWI-DWI (DDD), were used as input images, respectively. Three ADC thresholds including 0.6, 0.8 and 1.8 × 10^–3 mm²/s were applied. Dice similarity coefficient (DSC) was used to evaluate the segmentation performance of U-Nets. Nonparametric Kruskal–Wallis test with Tukey–Kramer post-hoc tests were used for comparison. A p <.05 was considered statistically significant. Results: The DSC significantly varied among different combos of images and different ADC thresholds. Hybrid U-Nets outperformed uniform U-Nets at ADC thresholds of 0.6 × 10^–3 mm²/s and 0.8 × 10^–3 mm²/s (p <.001). The U-Net with imaging combo of DDD had segmentation performance similar to hybrid U-Nets at an ADC threshold of 1.8 × 10^–3 mm²/s (p =.062 to 1). The U-Net using the imaging combo of DAA at the ADC threshold of 0.6 × 10^–3 mm²/s achieved the highest DSC in the segmentation of AIS lesion. Conclusions: The segmentation performance of U-Net for AIS varies among the input imaging combos and ADC thresholds. The U-Net is optimized by choosing the imaging combo of DAA at an ADC threshold of 0.6 × 10^–3 mm²/s in segmentating AIS lesion with highest DSC. Key Points: • Segmentation performance of U-Net for AIS differs among input imaging combos. • Segmentation performance of U-Net for AIS differs among ADC thresholds. • U-Net is optimized using DAA with ADC = 0.6 × 10^–3mm²/s. © 2023, The Author(s), under exclusive licence to European Society of Radiology.

关键词： Deep Learning Diffusion Magnetic Resonance Imaging Ischemic Stroke Neural Networks, Computer Retrospective Study

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Intrinsic Parameter Fluctuation and Process Variation Effect of Vertically Stacked Silicon Nanosheet Complementary Field-Effect Transistors

Intrinsic Parameter Fluctuation and Process Variation Effect...

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IEEE International Symposium on Quality Electronic Design

作者： Sekhar Reddy Kola Yiming Li Min-Hui Chuang Parallel and Scientific Computing Laboratory Hsinchu Taiwan Electrical Engineering and Computer Science International Graduate Program Hsinchu Taiwan Institute of Communications Engineering Hsinchu Taiwan Institute of Biomedical Engineering Hsinchu Taiwan Institute of Pioneer Semiconductor Innovation Hsinchu Taiwan Institute of Artificial Intelligence Innovation Hsinchu Taiwan Department of Electronics and Electrical Engineering National Yang Ming Chiao Tung University Hsinchu Taiwan Center for mmWave Smart Radar System and Technologies National Yang Ming Chiao Tung University Hsinchu Taiwan

We study the variability of vertically stacked gate-all-around silicon nanosheet (GAA Si NS) complementary field-effect transistors (CFETs). The process variation effect (PVE), the work function fluctuation (WKF), and the random dopant fluctuation (RDF) of CFETs are statistically estimated using an experimentally validated device simulation technique. Among five factors of PVE, the channel thickness (T Nch /T Pch ), the channel width (W ch ), and the gate length (L G ) are significant. Owing to superior GAA channel control and increased effective gate area, both WKF and RDF are suppressed. Notably, the PVE on both N-/P-FETs of GAA Si CFET induce the largest off-state current fluctuations of 80% and 278%, respectively, because the device characteristic is very sensitive to the layer thickness and width of channel.

关键词： Fluctuations Gallium arsenide Logic gates Electric variables Silicon Resource description framework Semiconductor process modeling

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