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International Conference on engineering and Emerging Technologies (ICEET)

作者： King Harold A. Recto Miguel T. Escoto Noel B. Hernandez Department of Electronics Computer and Communications Engineering Ateneo de Manila University Quezon City Philippines Electrical and Electronics Engineering Institute University of the Philippines Diliman Quezon City Philippines Post-doctoral Program in Quality Management of the Graduate School Centro Escolar University Manila Philippines

ISBN: (纸本)9781665491075

The green transition has brought about a worldwide-shift to the use of renewables as alternative energy sources. Because of this, high voltage DC has been a field of interest in power electronics due to its capability in efficiently transmitting power to reach remote areas. Typical DC-DC electronic power converter design has the capability of boosting voltage level to a certain extent but not enough for high-voltage applications. Using the DMAIC Approach of the Six Sigma, quality improvements in the design was proposed to stabilize operating frequency, bring up the output voltage from 100 VDC to 4,000 VDC and provide at least 10% margin of error in the apparent power measured at the output side to offset inherent losses in the electrical design. These proposed quality improvements were sustained by designing a control circuit that would ensure the attainment of the parameters set in the Define Phase of the DMAIC Approach. The result of the study is a practical 12 VDC to 4,000 VDC boost converter design that has incorporated all the proposed quality improvements.

关键词： Renewable energy sources Voltage measurement Power measurement Measurement uncertainty Green products High-voltage techniques Loss measurement

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Design and exploration of vertically stacked complementary tunneling field-effect transistors

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Applied Physics Express 2024年第1期17卷 014001-014001页

作者： Thoti, Narasimhulu Li, Yiming Parallel and Scientific Computing Laboratory National Yang Ming Chiao Tung University Hsinchu300093 Taiwan Electrical Engineering and Computer Science International Graduate Program National Yang Ming Chiao Tung University Hsinchu300093 Taiwan Institute of Communications Engineering National Yang Ming Chiao Tung University Hsinchu300093 Taiwan Institute of Biomedical Engineering National Yang Ming Chiao Tung University Hsinchu300093 Taiwan Department of Electronics and Electrical Engineering National Yang Ming Chiao Tung University Hsinchu300093 Taiwan

The purpose of this letter is to study the design and explore vertically stacked complementary tunneling field-effect transistors (CTFETs) using CFET technology for emerging technology nodes. As a prior work, the CTFET’s device-level simulations are implemented and deliberated in strict compliance with the experimental settings. This work comprises the study of physical and DC analyses by scaling the p- to n-CTFET separation (D pn), being a significant factor in CFET/CTFET design for its process difficulty. By utilizing the 50% benefit in footprint, the work is further extended to CTFET static random access memory implementation and characterization with hold/read noise margin analysis. © 2023 The Author(s). Published on behalf of The Japan Society of Applied Physics by IOP Publishing Ltd

关键词： Si-Ge alloys

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Development of teaching materials for improving motivation to learn electromagnetics using ict

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IEEJ Transactions on Fundamentals and Materials 2020年第4期140卷 171-178页

作者： Ohtaki, Yu Ohchi, Masashi Master's Program in Electrical Electronics and Computer Engineering Graduate School of Engineering Chiba Institute of Technology 2-17-1 Tsudanuma Narashino275-0016 Japan Department of Electrical and Electronic Engineering Faculty of Engineering Chiba Institute of Technology 2-17-1 Tsudanuma Narashino275-0016 Japan

In this research, we have been developed teaching materials for electromagnetics that demonstrate theories using real-world actual applications (capacitors, coils, piezoelectric elements, Wireless Power Transfer(WPT), WiFi, direct-current motor, etc.) presented as animations and video data via Web services. Hypertext Markup Language (HTML) and JavaScript were used to create the Web services for teaching materials. Recently, the lack of academic ability of Japanese engineering course students has become a large social problem at Japanese higher education. In particular, in the field of electrical engineering education, the visualization and mathematical abilities of students have been declining remarkably. In addition, today's teaching materials for educational institutions in Japan tend to reply primarily on rote learning. However, we consider that rote learning is not the primary method for university education. We tested our new developed materials on students learning motivation of electromagnetics and evaluated their effectiveness with some questionnaires. It was clear that the new teaching method has effectiveness for increasing learning motivation of Electromagnetics. © 2020 The Institute of Electrical Engineers of Japan.

关键词： Web services

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Generative AI for Unmanned Vehicle Swarms: Challenges, Applications and Opportunities

arXiv

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arXiv 2024年

作者： Liu, Guangyuan Van Huynh, Nguyen Du, Hongyang Hoang, Dinh Thai Niyato, Dusit Zhu, Kun Kang, Jiawen Xiong, Zehui Jamalipour, Abbas In Kim, Dong The School of Computer Science and Engineering The Energy Research Institute @ NTU Interdisciplinary Graduate Program Nanyang Technological University Singapore The Department of Electrical Engineering and Electronics University of Liverpool Liverpool L69 3GJ United Kingdom The School of Electrical and Data Engineering University of Technology Sydney Australia The School of Computer Science and Engineering Nanyang Technological University Singapore College of Computer Science and Technology Nanjing University of Aeronautics and Astronautics Nanjing China The School of Automation Guangdong University of Technology China The Pillar of Information Systems Technology and Design Singapore University of Technology and Design Singapore The School of Electrical and Information Engineering University of Sydney Australia The College of Information and Communication Engineering Sungkyunkwan University Korea Republic of

With recent advances in artificial intelligence (AI) and robotics, unmanned vehicle swarms have received great attention from both academia and industry due to their potential to provide services that are difficult and dangerous to perform by humans. However, learning and coordinating movements and actions for a large number of unmanned vehicles in complex and dynamic environments introduce significant challenges to conventional AI methods. Generative AI (GAI), with its capabilities in complex data feature extraction, transformation, and enhancement, offers great potential in solving these challenges of unmanned vehicle swarms. For that, this paper aims to provide a comprehensive survey on applications, challenges, and opportunities of GAI in unmanned vehicle swarms. Specifically, we first present an overview of unmanned vehicles and unmanned vehicle swarms as well as their use cases and existing issues. Then, an in-depth background of various GAI techniques together with their capabilities in enhancing unmanned vehicle swarms are provided. After that, we present a comprehensive review on the applications and challenges of GAI in unmanned vehicle swarms with various insights and discussions. Finally, we highlight open issues of GAI in unmanned vehicle swarms and discuss potential research directions. © 2024, CC BY.

关键词： Metadata

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Industrial Semiconductor GPT: A Question-and-Answer System that Provides Professional Advice and Problem-Solving Methods for Semiconductor and Factory Equipment and Process

Industrial Semiconductor GPT: A Question-and-Answer System t...

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IEEE International Symposium on Industrial electronics (ISIE)

作者： Yi-Cheng Yu Cheng-Fu Liou Shang-Wen Chuang Chen-Yi Lee Graduate Degree Program of College of Electrical and Computer Engineering National Yang Ming Chiao Tung University Hsinchu Taiwan Research Labs (MZAIR Labs) Meta Zen Artificial Intelligence Tainan Taiwan Artificial Intelligence and Industrial Internet of Things Research Center Advantech Co. Ltd. Taipei Taiwan Department of Electronics Engineering National Yang Ming Chiao Tung University Hsinchu Taiwan

ISBN: (数字)9798350394085

ISBN: (纸本)9798350394092

Research on PHM(Predictive Health Management) for detecting or predicting abnormalities in semiconductors and factory equipment and processes typically focuses on improving accuracy and reducing model size. However, in actual factory settings, on-site personnel not only need to accurately detect and predict abnormalities in processes and equipment but also require an understanding of how to handle the encountered abnormal problems when they occur. This study proposes Industrial Semiconductor GPT technology, which embeds relevant professional technical documents of process equipment into a vector database and generates possible professional questions and answers. When on-site personnel inquire, a natural language processing algorithm is used to compare the generated answers with actual answers. Furthermore, this study verifies the collected expert data through prompting engineering, resulting in an approximately $9.39 \%$ increase in similarity, ensuring that factory personnel can obtain accurate and helpful answers when facing abnormal situations.

关键词： Semiconductor device modeling Accuracy Databases Search methods Production facilities Vectors Semiconductor process modeling

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Identification of D- and L-Phenylalanine Enantiomeric Mixtures by Employing Deep Neural Network Models

SSRN

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SSRN 2023年

作者： Nigdelioglu, Ebru Toprak, Elif Guney Akkurt, Melike Erol Barkana, Duygun Kazanci, Murat Uyaver, Sahin Calik, Nurullah Istanbul Medeniyet University Nanoscience and Nanoengineering Program Graduate School Istanbul Medeniyet University Istanbul34700 Turkey Istanbul Medeniyet University School of Engineering and Natural Sciences Department of Biomedical Engineering Istanbul Turkey Istanbul34700 Turkey Yeditepe University Faculty of Engineering Department of Electrical and Electronics Engineering Kayışdagı Istanbul34755 Turkey Marmara University Faculty of Technology Department of Computer Engineering Maltepe Istanbul34854 Turkey

Phenylalanine is an aromatic essential amino acid that exhibits the tendency to self-aggregate into fibrillar structures in its enantiomerically pure form. This observation was indicated as the underlying mechanism of phenylketonuria, which is a genetic condition associated with various neurological, physical, and developmental issues, characterized with phenylalanine buildup in the brain. The presence of D-phenylalanine was demonstrated previously to inhibit the formation of fibrils by L-phenlyalanine, indicating its potential use in phenylketonuria treatment. In this study, several combinations of D and L-phenylalanine were examined with the help of state-of-the-art deep learning methods for their fibril forming capacity, demonstrating the usefulness and accuracy of deep learning methods in distinguishing between different self-assembled structures. © 2023, The Authors. All rights reserved.

关键词： Self assembly

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Joint state and parameter estimation based on constrained zonotopes

arXiv

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arXiv 2022年

作者： Rego, Brenner S. Locatelli, Diego Raimondo, Davide M. Raffo, Guilherme V. Graduate Program in Electrical Engineering Federal University of Minas Gerais MG Belo Horizonte31270-901 Brazil Department of Electrical Computer and Biomedical Engineering University of Pavia Italy Department of Electronics Engineering Federal University of Minas Gerais MG Belo Horizonte31270-901 Brazil

This note presents a new method for set-based joint state and parameter estimation of discrete-time systems using constrained zonotopes. This is done by extending previous set-based state estimation methods to include parameter identification in a unified framework. Unlike in interval-based methods, the existing dependencies between states and model parameters are maintained from one time step to the next, thus providing a more accurate estimation scheme. In addition, the enclosure of states and parameters is refined using measurements through generalized intersections, which are properly captured by constrained zonotopes. The advantages of the new approach are highlighted in two numerical examples. © 2022, CC BY-NC-ND.

关键词： Discrete time control systems

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Asynchronous Multi-Task Learning Based on One Stage YOLOR Algorithm

Asynchronous Multi-Task Learning Based on One Stage YOLOR Al...

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IEEE International Symposium on Industrial electronics (ISIE)

作者： Cheng-Fu Liou Tsung-Han Lee Jiun-In Guo Graduate Degree Program of College of Electrical and Computer Engineering National Yang Ming Chiao Tung University Hsinchu Taiwan Pervasive Artificial Intelligence Research Labs (PAIR Labs) Wistron-NCTU Embedded Artificial Intelligence Research Center Institute of Electronics National Yang Ming Chiao Tung University Hsinchu Taiwan

The You Only Learn One Representation (YOLOR) approach is an object detector that can encode implicit knowledge and explicit knowledge of multiple tasks simultaneously. However, the requirement of jointly feeding data is not a friendly setting for an edge device due to the high computational cost. A better strategy is to learn the concept of the new task on the device individually, one by one, without access to the old data. In other words, the model has to deal with multiple tasks asynchronously. In this work, we extend the multi-purpose network YOLOR to asynchronous multi-task learning to learn domain invariant features, which focus on capturing the relatedness between the weight of the previous task and data of the subsequent task. Further, as the number of tasks gradually increases, we accumulate significant weights by introducing task-specific masks and expert modules; the former can automatically identify important filters to prevent modification caused by new tasks, and the latter address the kernel space misalignment problem to perform multi-task feature selection. We experimentally demonstrate that the proposed training strategy significantly outperforms the traditional solution in learning multiple tasks at different times on a public dataset, which supports that the proposed approach is more competitive for resource-limited edge devices.

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Performance comparison of InGaN-based 40–80 μm micro-LEDs fabricated with and without plasma etching

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Materials Today Advances 2024年 22卷

作者： Lo, Yu-Yun Chen, Yi-Ho Hsu, Yun-Cheng Lee, Tzu-Yi Hung, Yu-Ying Kao, Yu-Cheng Zan, Hsiao-Wen Wuu, Dong- Sing Kuo, Hao-Chung Samukawa, Seiji Horng, Ray-Hua Institute of Electronics National Yang Ming Chiao Tung University 1001 University Road Hsinchu30010 Taiwan Department of Photonics College of Electrical and Computer Engineering National Yang Ming Chiao Tung University Hsinchu30010 Taiwan Graduate Degree Program of College of Electrical and Computer Engineering National Yang Ming Chiao Tung University Hsinchu30010 Taiwan Department of Materials Science and Engineering National Chung Hsing University Taichung40227 Taiwan Department of Applied Materials and Optoelectronic Engineering National Chi Nan University Nantou54561 Taiwan Semiconductor Research Center Hon Hai Research Institute Taipei11492 Taiwan Institute of Communications Engineering National Yang Ming Chiao Tung University Hsinchu30010 Taiwan

The fabrication of InGaN-based blue 4✕4 array micro-LEDs (μLEDs) with 40 μm ✕40 μm chip size and 2✕2 array μLEDs with 80 μm ✕80 μm chip size etching by the inductive coupled plasma reactive ion etching (ICPRIE) and defect-free neutral beam etching (NBE) processes was studied in this work. In μLEDs of this size, the influence of defects formation in the sidewalls on EQE was evaluated. There was almost no difference in EQE between μLEDs array etched by the NBE process no matter 40 μm ✕40 μm and 80 μm ✕80 μm, but the dependence was observed in the ICPRIE. Even with this size, it was found that the size effect of EQE is smaller than that in case of using ICPRIE for defect-free neutral beam etching. This impact is substantial since μLED predominantly operated at low current density, around 1–5 A/cm2. Consequently, the reduction of defect density, encompassing both internal and sidewall defects, becomes imperative even in 40–80 μm InGaN-based μLEDs. This not only improves the overall efficiency of μLEDs but also fortifies the brightness stability of μLED displays if process etching by NBE. It was also found that the etching shape had an influence on EQE. It could be attributed to fact that the etching profile angle of NBE was more vertical than that of ICPRIE. Because the different angles of the mesa resulted in different light intensity. The μLEDs emitting with a wavelength of 450 nm, the light extraction efficiency and intensity at a mesa angle 58° of NBE etching μLEDs was about 8% lower than those of an angle (38°) of ICPRIE etching μLEDs by simulation. © The Authors

关键词： Light emitting diodes

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Hot Carrier Injection Reliability of Fabricated N- and P-Type Multi FinFETs with Different TiN Stacks

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ECS Journal of Solid State Science and Technology 2023年第3期12卷 035007-035007页

作者： Chen, Yu-Lin Yeh, Wen-Kuan Hsu, Heng-Tung Chen, Ke-Horng Lin, Wen-Chin Yu, Tien-Han Chou, Hung-Ting Godwin Raj, D. Godfrey, D. International College of Semiconductor Technology National Yang Ming Chiao Tung University Taiwan Graduate Degree Program of College of Electrical and Computer Engineering National Yang Ming Chiao Tung University Taiwan National Applied Research Laboratories Taiwan Institute of Microelectronics National Cheng Kung University Taiwan National Chung-Shan Institute of Science and Technology Taoyuan Taiwan Dept of ECE Amal Jyothi College of Engineering Kerala India Dept of Electronics and Communication Engineering Dayananda Sagar University Bengaluru India

Device degradation due to hot carrier injection (HCI) in multi-fin 20 nm and 10 nm N- and P-type FinFET devices are thoroughly analyzed. To further understand the HCI reliability of the four FinFET devices, the device is fabricated with a standard Vt base and low Vt base gate stacks with different work functions. It is evident that: (i) The standard Vt device sustains lower effective stress bias due to the difference in threshold voltage, resulting in a more stable threshold voltage than the low Vt base device, and (ii) the transconductance of the single N- and P-type FinFET is more severely degraded than the multi-fin N- and P-type FinFET, mainly because multi N- and P-type Finfet has coupe effect, which effectively reduces the impact of HCI. © 2023 The Electrochemical Society ("ECS"). Published on behalf of ECS by IOP Publishing Limited

关键词： FinFET

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