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UAV-Aided Data Acquisition Using Gaining-Sharing Knowledge Optimization Algorithm

computers, Materials & Continua 2022年第9期72卷 5999-6013页

作者： Rania M Tawfik Hazem A.A.Nomer M.Saeed Darweesh Ali Wagdy Mohamed Hassan Mostafa Wireless Intelligent Networks Center(WINC) School of Engineering and Applied SciencesNile UniversityGiza12677Egypt School of Information Technology and Computer Science(ITCS) Nile UniversityGiza12677Egypt Operations Research Department Faculty of Graduate Studies for Statistical ResearchCairo UniversityGiza12613Egypt Department of Mathematics and Actuarial Science School of Science and EngineeringThe American University in CairoEgypt Electronics and Communications Engineering Department Cairo UniversityEgypt University of Science and Technology Nanotechnology and Nanoelectronics ProgramZewal City of Science and TechnologyOctober Gardens6th of OctoberGiza12578Egypt

Unmanned Aerial Vehicles(UAVs)provide a reliable and energyefficient solution for data collection from the Narrowband Internet of Things(NB-IoT)***,the UAV’s deployment optimization,including locations of the UAV’s stop points,is a necessity to minimize the energy consumption of the UAV and the NB-IoT devices and also to conduct the data collection *** this regard,this paper proposes GainingSharing Knowledge(GSK)algorithm for optimizing the UAV’s *** GSK,the number of UAV’s stop points in the three-dimensional space is encapsulated into a single individual with a fixed length representing an entire *** superiority of using GSK in the tackled problem is verified by simulation in seven *** provides significant results in all seven scenarios compared with other four optimization algorithms used before with the same ***,the NB-IoT is proposed as the wireless communication technology between the UAV and IoT devices.

关键词： NB-IoT UAV GSK stop points optimization

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Sensitivity analysis of ground impedances of power cables in electromagnetic transient responses

Sensitivity analysis of ground impedances of power cables in...

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IEEE International Autumn Meeting on Power, electronics and Computing (ROPEC)

作者： J. A. Calvillo J. R. Morales F. A. Uribe Graduate Program in Electrical Engineering The State University of Guadalajara Guadalajara México Division of Electronics and Computer The State University of Guadalajara Guadalajara México

ISBN: (纸本)9781509037957

This document presents a sensitivity analysis to evaluate the impact of different methods used to calculate ground-return impedances of power cables in electromagnetic transient responses. The sensitivity is observed in terms of the obtained accuracy in the voltage and current transient responses varying cable distance separation and ground resistivity. The propagation modes of open circuit voltages and the characteristics impedance of the line are also analyzed under the same criterion.

关键词： Impedance Conductivity Resistance Inductance Power cables Transient analysis Sensitivity analysis

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Developing a Smart Grids System as a PBL with Agile Method on computer engineering Courses

Developing a Smart Grids System as a PBL with Agile Method o...

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International Conference on Information Technology: New Generations (ITNG)

作者： Caio Henrique Coutinho Johnny Cardoso Marques Sarasuaty Megume Hayashi Yelisetty Samoel Mirachi Alexandre Lima Possebon Ribeiro Marcelo Amaral da Silva Adilson Marques da Cunha Luiz Alberto Vieira Dias Electronics and Computer Engineering Graduate Program Brazilian Aeronautics Institute of Technology (Instituto Tecnologico de Aeronatica-ITA) Sao Jose dos Campos Brazil

This paper describes an experiment of integrating three courses at the Brazilian Aeronautics Institute of Technology, within the Electronic and computer engineering graduate program on the 1st semester of 2011. A smart grids system was used as a Problem Based Learning (PBL) strategy together with an agile method and best practices within a project developed on three courses: CE-240 Database Systems Project, CE-245 Information Technologies, and CE-229 Software Testing. Students of these courses had to interact, in order to produce a prototype of a smart grids system, simulating a real project development. At the end, a survey among students has proved that the integration of practical exercises has provided higher levels of understanding and problem solving capabilities, improving students' knowledge. The survey also has shown that communication between students from different courses should be improved. The major findings of this paper were that the integration of the three courses was favorable by 83% of the surveyed students, and most students (73%) have considered that their knowledge was improved. Authors recommend the use of practical exercises, courses integration, and PBL to considerably increase the quality of electronic and computer engineering courses.

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Designing Classical Header Bits for Quantum Wrapper Networking with O-band Quantum Signal

Designing Classical Header Bits for Quantum Wrapper Networki...

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2023 Laser Science, LS 2023

作者： Gül, G. On, M. Berkay Singh, S.K. Proietti, R. Kanter, G.S. Yoo, S.J.B. Kumar, P. Graduate Program in Applied Physics Northwestern University 2145 Sheridan Road EvanstonIL60208 United States Department of Electrical and Computer Engineering University of California Davis DavisCA95616 United States Department of Electronics and Communication Eng. Indian Institute of Technology Roorkee247667 India Department of Electronics and Telecommunications Engineering Politecnico di Torino Italy Center for Photonic Communication and Computing Dept. of Electrical and Computer Eng. Northwestern University EvanstonIL60208 United States

We investigate the impact of wavelength choice for the classical headers in quantum wrapper networking with O-band quantum payload. We show that a C-band header performs substantially better than an O-band header. ... 详细信息

关键词： Quantum electronics

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Designing Classical Header Bits for Quantum Wrapper Networking with O-band Quantum Signal

Designing Classical Header Bits for Quantum Wrapper Networki...

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Frontiers in Optics + Laser Science 2023, FiO, LS 203: Part of Frontiers in Optics + Laser Science 2023

作者： Gül, G. Berkay On, M. Singh, S.K. Proietti, R. Kanter, G.S. Yoo, S.J.B. Kumar, P. Graduate Program in Applied Physics Northwestern University 2145 Sheridan Road EvanstonIL60208 United States Department of Electrical and Computer Engineering University of California Davis DavisCA95616 United States Department of Electronics and Communication Eng. Indian Institute of Technology Roorkee247667 India Department of Electronics and Telecommunications Engineering Politecnico di Torino Italy Center for Photonic Communication and Computing Dept. of Electrical and Computer Eng. Northwestern University EvanstonIL60208 United States

ISBN: (纸本)9781957171296

关键词： Bandpass filters Beam splitters Bit error rate Entanglement distribution Quantum teleportation Raman scattering

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Cognitive Informatics and Soft Computing 1

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丛书名： Advances in Intelligent Systems and Computing

1000年

作者： Pradeep Kumar Mallick Akash Kumar Bhoi Gonçalo Marques Victor Hugo C. de Albuquerque

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Multi-Resonant Class-E2 DC-DC Converter based on Voltage-Controlled Oscillator

Multi-Resonant Class-E2 DC-DC Converter based on Voltage-Con...

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IEEE Kansas Power and Energy Conference

作者： Lucas Sangoi Mendonça Valmir de Oliveira Academic Department of Electronics Federal University of Technology-Paraná Curitiba Brazil Academic Department of Electronics Graduate Program in Electrical and Computer Engineering Federal University of Technology-Paraná Curitiba Brazil

ISBN: (数字)9798350372403

ISBN: (纸本)9798350372410

This paper shows the design and implementation of a multi-resonant Class-E 2 DC-DC converter based on voltage- controlled oscillator. By cascading a Class-E inverter to a Class-E rectifier, a double soft-switching converter is obtained, in which, the active switch turns-on with zero voltage switching and the diode turns-off with zero derivative voltage switching. This work relies on design equations based on normalized charts that relate the resonant frequency to the current transfer function, quality factor and peak values for the switch variables. In order to activate the switch, a circuit scheme is proposed based on a voltage-controlled oscillator connected to a low-side gate-driver. Therefore, it is not necessary to use a microcontroller neither auxiliary power sources. Experimental results are presented to show the feasibility of the proposed converter.

关键词： Q-factor Voltage-controlled oscillators Transfer functions Resonant frequency Rectifiers Switches DC-DC power converters

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A study on fitness function with parameter-free genetic algorithm for non-destructive estimation of permittivity distribution based on capacitance and electric potential

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IEEJ Transactions on Fundamentals and Materials 2016年第4期136卷 164-173页

作者： Ohchi, Masashi Tomiyama, Kazuyoshi Furukawa, Tatsuya Itoh, Hideaki Fukumoto, Hisao Department of Electrical Electronics and Computer Engineering Faculty of Engineering Chiba Institute of Technology 2-17-1 Tudanuma Narashino275-0016 Japan Master's Program in Electrical Electronics and Computer Engineering Graduate School of Engineering Chiba Institute of Technology 2-17-1 Tudanuma Narashino275-0016 Japan Graduate School of Science and Engineering Saga University 1 Honjo-machi Saga840-8502 Japan

We have carried out experimental and numerical analyses for reconstruction of permittivity distribution using a pair of long distance small size electrodes and additional arc electrodes. A reconstruction method for permittivity distribution that uses a genetic algorithm and numerical analysis (finite element method) based on measured capacitance has been proposed and investigated. However, the conventional method had a problem in accuracy. In this paper, the reconstruction method has been improved by using a Parameter-free Genetic Algorithm(PfGA) based on measured capacitance and electric potential. In addition, we have evaluated the fitness function with PfGA. © 2016 The Institute of Electrical Engineers of Japan.

关键词： Finite element method

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The Impact of Hot Carrier Injection-Induced Device Degradation for Lower-Power FinFETs

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Journal of Electronic Materials 2023年第2期52卷 1391-1399页

作者： Chen, Yu-Lin Yeh, Wen-Kuan Hsu, Heng-Tung Chen, Ke-Horng Lien, Der-Hsien Lin, Wen-Chin Yu, Tien-Han Chiu, Yu-Sheng Godwinraj, D. Godfrey, D. Wu, Chien-Hung International College of Semiconductor Technology National Yang Ming Chiao Tung University Hsinchu Taiwan Graduate Degree Program of College of Electrical and Computer Engineering National Yang Ming Chiao Tung University Hsinchu Taiwan Institute of Electronics National Yang Ming Chiao Tung University Hsinchu Taiwan Institute of Microelectronics National Cheng Kung University Tainan Taiwan Department of ECE Amal Jyothi College of Engineering Kerala Kottayam India Department of Optoelectronics and Materials Engineering Chung Hua University Hsinchu Taiwan Department of Electronics and Communication Engineering Dayananda Sagar University Bengaluru India National Applied Research Laboratories Hsinchu Taiwan

The impact of hot carrier injection (HCI) on the performance of standard and low-VT FinFETs are investigated and benchmarked with each other. For this investigation, these FinFETs were fabricated with various gate lengths (L) from 16 to 36 nm. HCI-induced transconductance degradation in standard devices for gate length variations of 36 nm down to 16 nm was 75%, while it was 35% for low-VT devices. Similarly, the degradation of threshold voltage in standard devices for gate length variations of 36 nm down to 16 nm was 39%, while it was 36% for low-VT device. In this work, as the device is subject to HCI, we found that: (1) short-channel devices cause severe degradation on the threshold voltage and transconductance (gm) compared to long-channel devices, owing to the higher electric field for short-channel devices at the gate edge, (2) standard devices exhibit a more stable threshold voltage than that of low-VT power devices, since the TiN barrier layer prevents Al atom diffusion into the HfO2 layer, and (3) the transconductance efficiency of standard devices is better than that of low-VT power devices. Further, the lower-VT devices show lower transconductance degradation than standard devices. However, the transconductance degradation of the long-channel standard and low-VT devices are the same. Compared to short-channel low-VT devices, extended-channel standard devices are more immune to the HCI effect. © 2022, The Minerals, Metals & Materials Society.

关键词： Threshold voltage

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Dilatometric study of ferroelectric Rb2CdI4 monoclinic crystal grown by czochralski method

Dilatometric study of ferroelectric Rb2CdI4 monoclinic cryst...

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12th International Meeting on Ferroelectricity, IMF-12 and the 18th IEEE International Symposium on Applications of Ferroelectrics, ISAF-18

作者： Yamaguchi, T. Gotou, S. Miyoshi, T. Kasano, H. Mitsui, T. Kurihama, T. Shimizu, F. Takashige, M. Department of Electrical Engineering School of Science and Engineering Meisei University Hino-shi Tokyo 191-8506 Japan Electrical Engineering Graduate School of Science and Engineering Meisei University Hino-shi Tokyo 191-8506 Japan Department of Physics Graduate School of Science and Engineering Yamaguchi University Yamaguchi-shi Yamaguchi 753-8512 Japan Laboratory of Developmental Program Faculty of Pharmaceutical Sciences Teikyo University Sagamihara-shi Kanagawa 229-0195 Japan Department of Electronics and Information Engineering College of Engineering Chubu University Kasugai-shi Aichi 487-8501 Japan Department of Electronics and Computer Science College of Science and Engineering Iwaki Meisei University Iwaki-shi Fukushima 970-8551 Japan

Crystal growth of Rb2CdI4 was performed by Czochralski method. Transparent colourless crystals with monoclinic structure were obtained. Temperature dependence of the dielectric constant along the b-axis was measured with variation of frequency. The thermal expansions x i (i = a, b, c and a′;a′ = a + c) along the four independent axes were measured both by clip-type strain-gauge dilatometer and X-ray diffraction methods. These results show distinct anomalies associated with the ferroelectric transition at TC= 210 K. Copyright © 2010 Taylor & Francis Group, LLC.

关键词： X ray diffraction

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