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IEEE Latin American Symposium on Circuits and Systems (LASCAS)

作者： David Cordova Eric Fabris Sergio Bampi Graduate Program on Microelectronics - UFRGS - Porto Alegre Brazil

The linearity and noise requirements in multi-band multi-standard applications make the design of RF CMOS circuits very challenging. A wideband low-noise transconductance amplifier (LNTA) in CMOS 0.13 μm technology that operates between 1-6 GHz is presented. The LNTA is based on a shunt-feedback (SFB) amplifier with current-reuse scheme and employing the noise-canceling technique used in low-noise amplifier designs for wideband input matching. Simulation results show a good trade-off between noise and power-consumption across the frequency span with an average noise figure of 4 dB and a minimum transconductance of 42 mS over the entire band. Performance variations were estimated at 2 GHz with Monte Carlo analysis. The total power consumption is 8.4 mW from 1.2 V supply.

关键词： Noise Radio frequency Wideband Transconductance CMOS integrated circuits Noise measurement Impedance matching

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Plasmon optics and thermal dissipation in nanocomposite thin films

Plasmon optics and thermal dissipation in nanocomposite thin...

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2015 MRS Spring Meeting

作者： Dunklin, Jeremy R. Forcherio, Gregory T. Berry, Keith R. Roper, D.K. Department of Chemical Engineering University of Arkansas FayettevilleAR72701 United States MicroElectronics-Photonics Graduate Program University of Arkansas FayettevilleAR72701 United States

ISBN: (纸本)9781510826427

Optical properties and thermal relaxation dynamics of resonantly excited plasmons are important in applications for optoelectronics, biomedicine, energy, and catalysis. Geometric optics of polydimethylsiloxane (PDMS) thin films containing uniformly or asymmetrically distributed polydisperse reduced AuNPs or uniformly distributed monodisperse solution-synthesized AuNPs were recently evaluated using a compact linear algebraic sum. Algebraic calculation of geometric transmission, reflection, and attenuation for AuNP-PDMS films provides a simple, workable alternative to effective medium approximations, computationally expensive methods, and fitting of experimental data. This approach allows for the summative optical responses of a sequence of 2D elements comprising a 3D assembly to be analyzed Thin PDMS films containing 3-7 micron layers of reduced AuNPs were fabricated with a novel diffusive-reduction synthesis technique. Rapid diffusive reduction of AuNPs into asymmetric PDMS thin films provided superior photothermal response relative to thicker films with AuNPs reduced throughout, with a photon-to-heat conversion of up to 3000°C/watt which represents 3-230-fold increase over previous AuNP-functionalized systems. Later work showed that introduction of AuNPs into PDMS enhanced thermoplasmonic dissipation coincident with internal reflection of incident resonant irradiation. Measured thermal emission and dynamics of AuNP-PDMS thin films exceeded emission and dynamics attributable by finite element analysis to Mie absorption, Fourier heat conduction, Rayleigh convection, and Stefan-Boltzmann radiation. Refractive-index matching experiments and measured temperature profiles indicated AuNP-containing thin films internally reflected light and dissipated power transverse to the film surface. Enhanced thermoplasmonic dissipation from metal-polymer nanocomposite thin films could affect opto- and bio-electronic implementation of these systems. © 2015 Materials Research Society.

关键词： Thin films

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Electromechanical properties of one dimensinal carbon chains 9

Electromechanical properties of one dimensinal carbon chains

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9th IEEE International Conference on Nano/Molecular Medicine and Engineering, NANOMED 2015

作者： Salman, Zeina Nair, Arun Tung, Steve Microelectronics and Photonics Graduate Program University of Arkansas FayettevilleAR72701 United States Department of Mechanical Engineering University of Arkansas FayettevilleAR72701 United States

ISBN: (纸本)9781467396714

Carbon based nanostructures such as graphene and carbon nanotubes have received widespread attention due to their unique mechanical and electronic properties. This paper describes a quantum mechanics based study of the electronic band structures and transport properties of one-dimensional (1D) carbon chains, the thinnest nanowires available in nature. The study is based on the application of density functional theory and non-equilibrium Green's function where maximally localized Wannier functions and Landauer formalism are combined to compute the electronic band structures and quantum conductance of the 1D carbon chains. The simulation result indicates that the peak quantum conductance of 1D carbon chains is about five times smaller than that of carbon nanotubes. However, the quantum conductance is also a function of the length and chemical bonds of the carbon chains. When the carbon chains are mechanically strained at 3%, the quantum conductance is reduced by about 50%. This result suggests 1D carbon chains can provide ultra high-resolution electromechanical measurements of important biomolecules such as DNA. © 2015 IEEE.

关键词： Carbon nanotubes

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Within-die and die-to-die variability on 65nm CMOS : Oscillators experimental results 6

Within-die and die-to-die variability on 65nm CMOS : Oscilla...

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6th International Workshop on CMOS Variability, VARI 2015

作者： Brito, Juan Pablo Martinez Lubaszewski, Marcelo Bampi, Sergio Graduate Program on Microelectronics PGMICRO - Informatics Institute Federal University of Rio Grande do Sul UFRGS Porto Alegre Brazil CEITEC S.A. Semiconductors Porto Alegre Brazil

ISBN: (纸本)9781509000715

This paper presents experimental data and analyses from the oscillation frequency of CMOS ring oscillators (ROs). The measurements are analyzed in order to separate the coefficient of variation (CV = σ/μ) behavior of both within-die (WID) process variations and Die-to-Die (D2D) process variations. Three different RO's sizes distributed over a total of 96 ROs per chip were measured in 32 different chip samples, all from a single MOSIS Multi-Project-wafer in a commercial 65nm CMOS process. All ROs were measured with varying power supply voltages, from nominal VDD (1.2V) down to nearthreshold (0.45V), resulting in a sample space of 18.432 points of interest. Statistical analysis results are shown regarding each RO stage size, the applied power supply and the correlation of both to the WID and D2D variations. The increase on D2D and WID coefficients of variations at the near-threshold supplies is very significant, as explained by increased delay variability at the moderate inversion regime of the FETs. The 96 test ROs occupy a total area of 200 x 480 μm2 in each test chip. © 2015 IEEE.

关键词： Dies

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MOSFET stacked-pair test structure for mismatch evaluation by estimating the on-resistance ratio 6

MOSFET stacked-pair test structure for mismatch evaluation b...

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6th International Workshop on CMOS Variability, VARI 2015

作者： Brito, Juan Pablo Martinez Lubaszewski, Marcelo Bampi, Sergio Graduate Program on Microelectronics PGMICRO - Informatics Institute Federal University of Rio Grande do Sul - UFRGS Porto Alegre Brazil CEITEC S.A. Semiconductors Porto Alegre Brazil

ISBN: (纸本)9781509000715

This work describes a procedure for evaluating the mismatch between MOSFET transistors in a test array and connected as stacked-pairs. The transistor mismatch is characterized by measuring the gate voltage dependence of the DC voltage established at the middle node of the common-gate MOSFET stacked-pair. This procedure is modeled as the onresistance ratio of these two transistors and it is performed by two simple measurements. Various pieces of information on the MOSFET mismatch characteristics (e.g., channel length variation and threshold voltage variation) can be extracted. The test structure was manufactured in 180nm CMOS technology, and the test array was designed to allow a large number of MOSFET stacked-pairs, from transistors placed in different parts of the layout to vary gradually the distance of the paired FETs. © 2015 IEEE.

关键词： Threshold voltage

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EMI resisting MOSFET-Only Voltage Reference based on the ZTC condition

EMI resisting MOSFET-Only Voltage Reference based on the ZTC...

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Annual IEEE Northeast Workshop on Circuits and Systems (NEWCAS)

作者： David Cordova Pedro Toledo Hamilton Klimach Sergio Bampi Eric Fabris NSCAD Microeletronica Graduate Program on Microelectronics UFRGS Porto Alegre RS Brazil

Electromagnetic interference (EMI) can significantly degrade the performance of analog circuits, including DC voltage and current references, due to their limited Power Supply Rejection Ratio (PSRR). An EMI-resisting MOSFET-Only Voltage Reference is herein proposed, based on the MOSFET Zero Temperature Coefficient (ZTC) vicinity condition. The ZTC condition is analytically derived through a continuous MOSFET model that is valid from weak to strong inversion and a design methodology is proposed. The final circuit was designed in a 130 nm process and occupies around 0.0075 mm 2 of silicon area while consuming just 10.3 μW. Post-layout simulations presented a Voltage Temperature Coefficient (VTC) of 146 ppm/°C, for a temperature range from -55 to +125°C. An EMI source of 4 dBm (1 Vp P amplitude) injected in the power supply of our circuit, according to the Direct Power Injection (DPI) specification results in a maximum DC Shift and Peak-to-Peak ripple of 22.7 % and 11m Vpp, respectively.

关键词： Electromagnetic interference MOSFET Temperature dependence Power supplies Logic gates Semiconductor device modeling

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Plasmon optics and thermal dissipation in nanocomposite thin films

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MRS Online Proceedings Library (OPL) 2015年第1期1788卷 23-28页

作者： Jeremy R. Dunklin Gregory T. Forcherio Keith R. Berry Jr. D.K. Roper Department of Chemical Engineering University of Arkansas Fayetteville AR 72701 MicroElectronics-Photonics Graduate Program University of Arkansas Fayetteville AR 72701

Optical properties and thermal relaxation dynamics of resonantly excited plasmons are important in applications for optoelectronics, biomedicine, energy, and catalysis. Geometric optics of polydimethylsiloxane (PDMS) thin films containing uniformly or asymmetrically distributed polydisperse reduced AuNPs or uniformly distributed monodisperse solution-synthesized AuNPs were recently evaluated using a compact linear algebraic sum. Algebraic calculation of geometric transmission, reflection, and attenuation for AuNP-PDMS films provides a simple, workable alternative to effective medium approximations, computationally expensive methods, and fitting of experimental data. This approach allows for the summative optical responses of a sequence of 2D elements comprising a 3D assembly to be analyzed. Thin PDMS films containing 3-7 micron layers of reduced AuNPs were fabricated with a novel diffusive-reduction synthesis technique. Rapid diffusive reduction of AuNPs into asymmetric PDMS thin films provided superior photothermal response relative to thicker films with AuNPs reduced throughout, with a photon-to-heat conversion of up to 3000°C/watt which represents 3-230-fold increase over previous AuNP-functionalized systems. Later work showed that introduction of AuNPs into PDMS enhanced thermoplasmonic dissipation coincident with internal reflection of incident resonant irradiation. Measured thermal emission and dynamics of AuNP-PDMS thin films exceeded emission and dynamics attributable by finite element analysis to Mie absorption, Fourier heat conduction, Rayleigh convection, and Stefan-Boltzmann radiation. Refractive-index matching experiments and measured temperature profiles indicated AuNP-containing thin films internally reflected light and dissipated power transverse to the film surface. Enhanced thermoplasmonic dissipation from metal-polymer nanocomposite thin films could affect opto- and bio-electronic implementation of these systems.

关键词： polymer Au film

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Energy-efficient Gaussian filter for image processing using approximate adder circuits

Energy-efficient Gaussian filter for image processing using ...

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IEEE International Conference on Electronics, Circuits and Systems (ICECS)

作者： R. Oliveira Julio Leonardo B. Soares E. A. C. Costa Sergio Bampi Graduate Program on Electronic Engineering and Computing Universidade Catolica de Pelotas Pelotas Rio Grande do Sul BR Graduate Program on Microelectronics (PGMicro) Federal University of Rio Grande do Sul (UFRGS) Pelotas / Porto Alegre Brazil Graduate Program on Electronic Engineering and Computing Catholic University of Pelotas (UCPEL) Graduate Program on Microelectronics (PGMicro) Universidade Federal do Rio Grande do Sul Porto Alegre RS BR

This paper proposes the use of approximate adder circuits for 3×3 and 5×5 Gaussian filter implementations. The Gaussian filter is a convolution operator which is used to blur images and to remove noise, whose convolution implementation can be designed in hardware using only shifts and addition operations. In this work we evaluate the levels of approximations in computing or loss of accuracy in the arithmetic dataflow that the Gaussian filter can tolerate for a set of eight images. Our work deals with different levels of approximation in Ripple Carry Adders (RCA) which are part of the Gaussian filters adder tree implemented in hardware, and later compared to the best precise implementation of the same filter. Our results show an average energy savings of up to 40% and 25% for the approximate 3×3 and 5×5 Gaussian filters, respectively, without compromising the overall filtered images quality.

关键词： Adders Finite impulse response filters Kernel Energy efficiency Convolution Energy consumption Image processing

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MOSFET stacked-pair test structure for mismatch evaluation by estimating the on-resistance ratio

MOSFET stacked-pair test structure for mismatch evaluation b...

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European Workshop on CMOS Variability (VARI)

作者： Juan Pablo Martinez Brito Marcelo Lubaszewski Sergio Bampi CEITEC S.A. Semiconductors Porto Alegre Brazil Graduate Program on Microelectronics Federal University of Rio Grande do Sul - UFRGS

This work describes a procedure for evaluating the mismatch between MOSFET transistors in a test array and connected as stacked-pairs. The transistor mismatch is characterized by measuring the gate voltage dependence of the DC voltage established at the middle node of the common-gate MOSFET stacked-pair. This procedure is modeled as the on-resistance ratio of these two transistors and it is performed by two simple measurements. Various pieces of information on the MOSFET mismatch characteristics (e.g., channel length variation and threshold voltage variation) can be extracted. The test structure was manufactured in 180nm CMOS technology, and the test array was designed to allow a large number of MOSFET stacked-pairs, from transistors placed in different parts of the layout to vary gradually the distance of the paired FETs.

关键词： MOSFET Voltage measurement Logic gates Threshold voltage Semiconductor device modeling Layout

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MOS-only M-2M DAC for ultra-low voltage applications 6

MOS-only M-2M DAC for ultra-low voltage applications

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6th IEEE Latin American Symposium on Circuits and Systems, LASCAS 2015

作者： Sperotto, Israel Klimach, Hamilton Bampi, Sergio Microelectronics Graduate Program Federal University of Rio Grande Do sul Porto Alegre RS Brazil Electrical Engineering Department Federal University of Rio Grande Do sul Porto Alegre RS Brazil Informatics Institute Federal University of Rio Grande Do sul Porto Alegre RS Brazil

ISBN: (纸本)9781479983322

This work presents a study of the CMOS based R-2R ladder network (also called M-2M) Digital-to-Analog Converter (DAC) as a potential candidate for ultra-low voltage (ULV) applications, i.e. supply voltages VDD lower than 200mV. MOS transistors operate in subthreshold under such very low VDD, and the circuit analysis must be done using an all-region continuous MOSFET model. Simulation results in a commercial 130 nm process corroborate the presented analysis, showing that it is possible to implement this DAC topology for 6 to 8 bits operating under supply voltages from 70 mV to 140 mV. © 2015 IEEE.

关键词： Digital to analog conversion

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