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检索条件"机构=Graduate Program in Microelectronics"
156 条 记 录,以下是31-40 订阅
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A 90 dB PSRR, 4 dBm EMI resistant MOSFET-Only Voltage Reference
A 90 dB PSRR, 4 dBm EMI resistant MOSFET-Only Voltage Refere...
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IEEE Latin American Symposium on Circuits and Systems (LASCAS)
作者: David Cordova Pedro Toledo Hamilton Klimach Sergio Bampi Eric Fabris Graduate Program on Microelectronics UFRGS Porto Alegre RS Brazil
Electromagnetic Interference (EMI) degrades the performance of voltage and current references, due to its finite Power Supply Rejection Ratio (PSRR). The design of a 90 dB PSRR, 4 dBm EMI resistant MOSFET-Only Voltage... 详细信息
来源: 评论
AxRSU- : Higher-Order m-Bit Approximate Encoders for Radix- Squarer Units
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Circuits, Systems, and Signal Processing 2024年 第6期43卷 1-30页
作者: da Rosa, Morgana M. A. Paim, Guilherme da Costa, Eduardo A. C. Soares, Rafael Bampi, Sergio Graduate Program on Computing Federal University of Pelotas (UFPel) Pelotas Brazil Graduate Program in Microelectronics Federal University of RGS Porto Alegre Brazil Graduate Program in Electronics and Computer Engineering Catholic University of Pelotas Pelotas Brazil
Approximate computing has emerged as a design alternative to enhance design efficiency by capitalizing on the inherent error resilience observed in numerous applications. Various error-resilient and compute-intensive ...
来源: 评论
A 40 nW 32.7 kHz CMOS Relaxation Oscillator with Comparator Offset Cancellation for Ultra-Low Power applications
A 40 nW 32.7 kHz CMOS Relaxation Oscillator with Comparator ...
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IEEE Latin American Symposium on Circuits and Systems (LASCAS)
作者: William Teles Medeiros Hamilton Klimach Sergio Bampi Microelectronics Graduate Program UFRGS Porto Alegre RS Brazil
This paper presents a fully-integrated 32.7 kHz relaxation oscillator designed in TSMC 40 nm CMOS for IoT applications. Simulation results show that the proposed relaxation oscillator consumes 40 nW at room temperatur... 详细信息
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Within-die and die-to-die variability on 65nm CMOS : Oscillators experimental results  6
Within-die and die-to-die variability on 65nm CMOS : Oscilla...
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6th International Workshop on CMOS Variability, VARI 2015
作者: Brito, Juan Pablo Martinez Lubaszewski, Marcelo Bampi, Sergio Graduate Program on Microelectronics PGMICRO - Informatics Institute Federal University of Rio Grande do Sul UFRGS Porto Alegre Brazil CEITEC S.A. Semiconductors Porto Alegre Brazil
This paper presents experimental data and analyses from the oscillation frequency of CMOS ring oscillators (ROs). The measurements are analyzed in order to separate the coefficient of variation (CV = σ/μ) behavior o... 详细信息
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MOSFET stacked-pair test structure for mismatch evaluation by estimating the on-resistance ratio  6
MOSFET stacked-pair test structure for mismatch evaluation b...
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6th International Workshop on CMOS Variability, VARI 2015
作者: Brito, Juan Pablo Martinez Lubaszewski, Marcelo Bampi, Sergio Graduate Program on Microelectronics PGMICRO - Informatics Institute Federal University of Rio Grande do Sul - UFRGS Porto Alegre Brazil CEITEC S.A. Semiconductors Porto Alegre Brazil
This work describes a procedure for evaluating the mismatch between MOSFET transistors in a test array and connected as stacked-pairs. The transistor mismatch is characterized by measuring the gate voltage dependence ... 详细信息
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EMI resisting MOSFET-Only Voltage Reference based on the ZTC condition
EMI resisting MOSFET-Only Voltage Reference based on the ZTC...
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Annual IEEE Northeast Workshop on Circuits and Systems (NEWCAS)
作者: David Cordova Pedro Toledo Hamilton Klimach Sergio Bampi Eric Fabris NSCAD Microeletronica Graduate Program on Microelectronics UFRGS Porto Alegre RS Brazil
Electromagnetic interference (EMI) can significantly degrade the performance of analog circuits, including DC voltage and current references, due to their limited Power Supply Rejection Ratio (PSRR). An EMI-resisting ... 详细信息
来源: 评论
A 0.7V Fully Differential First Order GZTC-C filter
A 0.7V Fully Differential First Order GZTC-C filter
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Symposium on Integrated Circuits and Systems Design (SBCCI)
作者: Pedro Toledo Renê Timbo David Cordova Hamilton Klimach Sergio Bampi Eric Fabris NSCAD Microeletronica Graduate Program on Microelectronics-UFRGS Porto Alegre RS Brazil
A 0.7 V supply voltage fully differential first order GZTC-C filter is herein proposed. The GZTC-C filter definition is used in this paper as a Transconductance-Capacitor filter (Gm-C) in which its gm stage is biased ... 详细信息
来源: 评论
A fully integrated CMOS 2.4GHz and 24dBm linear power amplifier
A fully integrated CMOS 2.4GHz and 24dBm linear power amplif...
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Annual IEEE Northeast Workshop on Circuits and Systems (NEWCAS)
作者: Gabriel Teófilo Neves Guimarães Hamilton Duarte Klimach Sergio Bampi Microelectronics Graduate Program Federal University of Rio Grande do Sul Porto Alegre RS BR Microelectronics Graduate Program Federal University of Rio Grande do Sul Porto Alegre RS Brazil
This work presents a fully integrated single-stage 2.4 GHz power amplifier (PA) that was designed in a 180nm CMOS process using a power combining technique to achieve higher output power. A series combining transforme... 详细信息
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Expanding chiral metamaterials for retrieving fingerprints via vibrational circular dichroism
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Light(Science & Applications) 2023年 第7期12卷 1401-1414页
作者: Cheng Xu Zhihao Ren Hong Zhou Jingkai Zhou Chong Pei Ho Nan Wang Chengkuo Lee Department of Electrical and Computer Engineering National University of SingaporeSingapore 117583Singapore Center for Inteligent Sensors and MEMS(CISM) National University of SingaporeSingapore 117608Singapore institute of Microelectronics(IME) Agency for ScienceTechnology and Research(A*STAR)Singapore 138634Singapore NUS Graduate School for Integrative Science and Engineering Program(ISEP) National University of SingaporeSingapore 117456Singapore
Circular dichroism(CD)spectroscopy has been widely demonstrated for detecting chiral ***,the determination of chiral mixtures with various concentrations and enantiomeric ratios can be a challenging *** solve this pro... 详细信息
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A comparative study between FinFET and CMOS-based SRAMs under resistive defects  20
A comparative study between FinFET and CMOS-based SRAMs unde...
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20th IEEE Latin American Test Symposium, LATS 2019
作者: Copetti, T.S. Balen, T.R. Brum, E. Aquistapace, C. Poehls, L. Bolzani Graduate Program on Microelectronics-PGMICRO Universidade Federal Do Rio Grande Do sul Porto Alegre Brazil School of Engineering Pontifical Catholic University of Rio Grande Do sul Porto Alegre Brazil
Due to several factors, such as Process Variations (PV), increased leakage current, Random Dopant Fluctuation (RDF), and mainly the Short-Channel Effect (SCE), the miniaturization of planar CMOS transistors reached it... 详细信息
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