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Proceedings of the 29th Symposium on Integrated Circuits and Systems Design: Chip on the Mountains

作者： Pedro Toledo Renê Timbo David Cordova Hamilton Klimach Sergio Bampi Eric Fabris NSCAD Microeletronica and Graduate Program on Microelectronics - UFRGS - Porto Alegre RS Brazil Graduate Program on Microelectronics - UFRGS - Porto Alegre RS Brazil

ISBN: (纸本)9781509027361

A 0.7 V supply voltage fully differential first order GZTC-C filter is herein proposed. The GZTC-C filter definition is used in this paper as a Transconductance-Capacitor filter (Gm-C) in which its gm stage is biased exactly on transconductance zero-temperature (GZTC) bias condition. This special bias point has all necessary conditions to design MOSFET transconductors with low temperature dependence. Additionally, two calibrate-points with three-bit resolution have been added to mitigate process variations which may cause bias shift errors on sensitive nodes, driving the circuit out of its normal GZTC operation region. The final circuit has been designed in a 130 nm CMOS process generating a 5 MHz cutoff frequency. The filter occupies around 0.01 mm2 of silicon area while consuming just 21 μW. Monte Carlo (MC) post-layout and post-calibrated simulation has presented an Effective Cutoff Frequency Temperature Co-efficient (TCeff) average of 73.4 ppm/°C with 30.6 ppm/°C standard deviation for a temperature range from -40 to +120°C and has estimated a cutoff frequency fabrication sensitivity of σ/μ = 0.87%, including average process and local mismatch variability.

关键词： CMOS

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Improved optical enhancement using double-width plasmonic gratings with nanogaps

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Photonics Research 2016年第5期4卷 173-180页

作者： Ahmad A.Darweesh Stephen J.Bauman Joseph B.Herzog Microelectronics-Photonics Graduate Program University of Arkansas Department of Physics University of Arkansas

Plasmonic grating structures have been shown effective at increasing near-field optical enhancement. A doublewidth plasmonic grating design is introduced, where each period has two alternating metal widths separated by a nanogap. With this new design, analysis has shown that plasmonic resonances couple between each metal section,resulting in even greater optical enhancement compared with single-width gratings. The geometry that gives the greatest optical enhancement has been determined with a computational model. This work demonstrates that the increased enhancement is due to hybridized modes that couple between the two grating segments.

关键词： Improved optical enhancement using double-width plasmonic gratings with nanogaps nm

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A fully integrated CMOS 2.4GHz and 24dBm linear power amplifier

A fully integrated CMOS 2.4GHz and 24dBm linear power amplif...

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Annual IEEE Northeast Workshop on Circuits and Systems (NEWCAS)

作者： Gabriel Teófilo Neves Guimarães Hamilton Duarte Klimach Sergio Bampi Microelectronics Graduate Program Federal University of Rio Grande do Sul Porto Alegre RS BR Microelectronics Graduate Program Federal University of Rio Grande do Sul Porto Alegre RS Brazil

This work presents a fully integrated single-stage 2.4 GHz power amplifier (PA) that was designed in a 180nm CMOS process using a power combining technique to achieve higher output power. A series combining transformer (SCT) combines two cascode differential amplifiers and makes extensive use of virtual AC ground nodes to reduce the impact of bond-wire parasitics. The center-taps of the output transformers are used for 2nd harmonic impedance tuning inside the chip. In post-layout simulation the PA uses a 3.3 V power supply and achieves 24dBm maximum output power at a peak drain efficiency of 23.4%. The test chip returned recently from fabrication and it will undergo electrical tests soon.

关键词： Transistors Power generation Impedance Layout Capacitors Power amplifiers Standards

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A 90% efficiency 60 mW MPPT switched capacitor DC — DC converter for photovoltaic energy harvesting aiming for IoT applications

A 90% efficiency 60 mW MPPT switched capacitor DC — DC conv...

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IEEE Latin American Symposium on Circuits and Systems (LASCAS)

作者： Roger Luis Brito Zamparette Hamilton Duarte Klimach Sergio Bampi Microelectronics Graduate Program Universidade Federal do Rio Grande do Sul Porto Alegre RS BR Microelectronics Graduate Program Federal University of Rio Grande do Sul Porto Alegre RS Brazil

ISBN: (纸本)9781509058600

This work presents a six phase Switched Capacitor (SC) DC - DC converter for photovoltaic Energy Harvesting designed in a 130 nm CMOS process for commercial motes application and Internet of Things (IoT). It tracks the Maximum Power Point (MPP) of a commercial 3 cm × 3 cm 60 mW poly-crystalline photoelectric panel through switching frequency modulation aiming battery recharge. Open-circuit voltage ratio was the chosen Maximum Power Point Tracking (MPPT) strategy. The converter achieves a maximum power conversion efficiency of 90 % for input power higher than 30 mW and is designed to operate with input voltages from 1.25 V to 1.8 V, resulting output voltages from 2.5 V to 3.6 V, respectively. Peripheral circuitry also includes an output over-voltage protection of 3.6 V and the control circuits, that consumes a total of 850 μA at 3.3 V. Complete layout consumes 300 × 700 μm 2 of silicon area. The only external components are 6×100 nF capacitors.

关键词： Switches Capacitors Capacitance Transistors Switching frequency Batteries Topology

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Technology Roadmap for Flexible Sensors

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ACS NANO 2023年第6期17卷 5211-5295页

作者： Luo, Yifei Abidian, Mohammad Reza Ahn, Jong-Hyun Akinwande, Deji Andrews, Anne M. Antonietti, Markus Bao, Zhenan Berggren, Magnus Berkey, Christopher A. Bettinger, Christopher John Chen, Jun Chen, Peng Cheng, Wenlong Cheng, Xu Choi, Seon-Jin Chortos, Alex Dagdeviren, Canan Dauskardt, Reinhold H. Di, Chong-an Dickey, Michael D. Duan, Xiangfeng Facchetti, Antonio Fan, Zhiyong Fang, Yin Feng, Jianyou Feng, Xue Gao, Huajian Gao, Wei Gong, Xiwen Guo, Chuan Fei Guo, Xiaojun Hartel, Martin C. He, Zihan Ho, John S. Hu, Youfan Huang, Qiyao Huang, Yu Huo, Fengwei Hussain, Muhammad M. Javey, Ali Jeong, Unyong Jiang, Chen Jiang, Xingyu Kang, Jiheong Karnaushenko, Daniil Khademhosseini, Ali Kim, Dae-Hyeong Kim, Il-Doo Kireev, Dmitry Kong, Lingxuan Lee, Chengkuo Lee, Nae-Eung Lee, Pooi See Lee, Tae-Woo Li, Fengyu Li, Jinxing Liang, Cuiyuan Lim, Chwee Teck Lin, Yuanjing Lipomi, Darren J. Liu, Jia Liu, Kai Liu, Nan Liu, Ren Liu, Yuxin Liu, Yuxuan Liu, Zhiyuan Liu, Zhuangjian Loh, Xian Jun Lu, Nanshu Lv, Zhisheng Magdassi, Shlomo Malliaras, George G. Matsuhisa, Naoji Nathan, Arokia Niu, Simiao Pan, Jieming Pang, Changhyun Pei, Qibing Peng, Huisheng Qi, Dianpeng Ren, Huaying Rogers, John A. Rowe, Aaron Schmidt, Oliver G. Sekitani, Tsuyoshi Seo, Dae-Gyo Shen, Guozhen Sheng, Xing Shi, Qiongfeng Someya, Takao Song, Yanlin Stavrinidou, Eleni Su, Meng Sun, Xuemei Takei, Kuniharu Tao, Xiao-Ming Tee, Benjamin C. K. Thean, Aaron Voon-Yew Trung, Tran Quang Wan, Changjin Wang, Huiliang Wang, Joseph Wang, Ming Wang, Sihong Wang, Ting Wang, Zhong Lin Weiss, Paul S. Wen, Hanqi Xu, Sheng Xu, Tailin Yan, Hongping Yan, Xuzhou Yang, Hui Yang, Le Yang, Shuaijian Yin, Lan Yu, Cunjiang Yu, Guihua Yu, Jing Yu, Shu-Hong Yu, Xinge Zamburg, Evgeny Zhang, Haixia Zhang, Xiangyu Zhang, Xiaosheng Zhang, Xueji Zhang, Yihui Zhang, Yu Zhao, Siyuan Zhao, Xuanhe Zheng, Yuanjin Zheng, Yu-Qing Zheng, Zijian Zhou, Tao Zhu, Bowen Zhu, Ming Zhu, Rong Zhu, Yangzhi Zhu, Yong Zou, Guijin Chen, Xiaodong 08-03 Innovis Singapore 138634 Republic of Singapore Innovative Centre for Flexible Devices (iFLEX) School of Materials Science and Engineering Nanyang Technological University Singapore 639798 Singapore Department of Biomedical Engineering University of Houston Houston Texas 77024 United States School of Electrical and Electronic Engineering Yonsei University Seoul 03722 Republic of Korea Department of Electrical and Computer Engineering The University of Texas at Austin Austin Texas 78712 United States Microelectronics Research Center The University of Texas at Austin Austin Texas 78758 United States Department of Chemistry and Biochemistry California NanoSystems Institute and Department of Psychiatry and Biobehavioral Sciences Semel Institute for Neuroscience and Human Behavior and Hatos Center for Neuropharmacology University of California Los Angeles Los Angeles California 90095 United States Colloid Chemistry Department Max Planck Institute of Colloids and Interfaces 14476 Potsdam Germany Department of Chemical Engineering Stanford University Stanford California 94305 United States Laboratory of Organic Electronics Department of Science and Technology Campus Norrköping Linköping University 83 Linköping Sweden Wallenberg Initiative Materials Science for Sustainability (WISE) and Wallenberg Wood Science Center (WWSC) SE-100 44 Stockholm Sweden Department of Materials Science and Engineering Stanford University Stanford California 94301 United States Department of Biomedical Engineering and Department of Materials Science and Engineering Carnegie Mellon University Pittsburgh Pennsylvania 15213 United States Department of Bioengineering University of California Los Angeles Los Angeles California 90095 United States School of Chemistry Chemical Engineering and Biotechnology Nanyang Technological University Singapore 637457 Singapore Nanobionics Group Department of Chemical and Biological Engineering Monash University Clayton Australia 3800 Monash

Humans rely increasingly on sensors to address grand challenges and to improve quality of life in the era of digitalization and big data. For ubiquitous sensing, flexible sensors are developed to overcome the limitations of conventional rigid counterparts. Despite rapid advancement in bench-side research over the last decade, the market adoption of flexible sensors remains limited. To ease and to expedite their deployment, here, we identify bottlenecks hindering the maturation of flexible sensors and propose promising solutions. We first analyze continued...challenges in achieving satisfactory sensing performance for real-world applications and then summarize issues in compatible sensor-biology interfaces, followed by brief discussions on powering and connecting sensor networks. Issues en route to commercialization and for sustainable growth of the sector are also analyzed, highlighting environmental concerns and emphasizing nontechnical issues such as business, regulatory, and ethical considerations. Additionally, we look at future intelligent flexible sensors. In proposing a comprehensive roadmap, we hope to steer research efforts towards common goals and to guide coordinated development strategies from disparate communities. Through such collaborative

关键词： soft materials mechanics engineering flexible electronics conformable sensors bioelectronics human-machine interfaces body area sensor networks technology translation sustainable electronics

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A 0.45 V, 93 pW temperature-compensated CMOS voltage reference

A 0.45 V, 93 pW temperature-compensated CMOS voltage referen...

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IEEE Latin American Symposium on Circuits and Systems (LASCAS)

作者： Arthur Campos de Oliveira David Cordova Hamilton Duarte Klimach Sergio Bampi Microelectronics Graduate Program Federal University of Rio Grande do Sul porto Alegre RS Brazil

ISBN: (纸本)9781509058600

This paper presents a self-biased self-cascode MOSFET (SBSCM) voltage reference that can operate with supply voltages as low as 0.45 V while consuming tens of pW. The voltage reference is generated through the self-cascode MOSFET (SCM) using transistors with different threshold voltages and is implemented in a way that the SCM itself composes the bias circuitry. The proposed topology was implemented in a standard 0.18 μm CMOS process and post-layout simulation results in a reference voltage of 248 mV with temperature coefficient around 7 ppm/ o C for the 0 o C to 125 o C range, while consuming 93 pW at room temperature with 0.45 V of supply voltage. The occupied silicon area is 0.002 mm 2 .

关键词： Threshold voltage Temperature dependence Integrated circuit modeling Semiconductor device modeling MOSFET Standards voltage reference threshold voltage Semiconductor device models integrated circuit modelling metal-oxide-semiconductor field effect transistors temperature dependence supply voltage subcarrier multiplexing Vanadium

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Evaluation of fault attack detection on SRAM-based FPGAs

Evaluation of fault attack detection on SRAM-based FPGAs

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Latin American Test Workshop, LATW

作者： Fabio Benevenuti Fernanda Lima Kastensmidt Graduate Program in Microelectronics (PGMICRO) Universidade Federal do Rio Grande do Sul (UFRGS) Brazil

ISBN: (纸本)9781538604168

In this paper we present an extended fault injection approach to configuration memory of SRAM-based FPGAs consisting of inter frame many bits upsets to be used as an evaluation tool for attack detection capability and countermeasure effectiveness in security sensitive design modules. The work presented in this paper is twofold. First, we present the concept of a fault detection mechanism for SRAM-based FPGAs based on redundancy of functional modules to be placed evenly spaced over the FPGA floorplan and composing a fault detection mesh. On the following, we present the results of fault injection at the configuration memory of a SRAM-based FPGA used to evaluate the detection capability of different configurations of such detection module. To this, fault injection is done flipping many bits in sequence, locally, mimicking a laser attack. To demonstrate this concept, it was implemented in a Xilinx 7 Series device. The detection module used in the experiments was built around a substitution box (S-box) that is part of the Rijndael symmetric cryptography and the Advanced Encryption Standard (AES).

关键词： Field programmable gate arrays Circuit faults Cryptography Fault detection Sensors Redundancy

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Low cost automatic test vector generation for structural analog testing 18

Low cost automatic test vector generation for structural ana...

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18th IEEE Latin-American Test Symposium, LATS 2017

作者： Chinazzo, André L. De Aguirre, Paulo C. Comassetto Balen, Tiago R. Microelectronic System Design Group Technische Universität Kaiserslautern Kaiserslautern Germany Universidade Federal Do Pampa Alegrete RS Brazil Graduate Program on Microelectronics Universidade Federal Do Rio Grande Do sul Porto Alegre RS Brazil

ISBN: (纸本)9781538604151

This work presents a low cost automatic method to test vector generation for defect-oriented structural analog testing. An optimal set of analog single tone signals is obtained by computing the frequency response of circuit nodes, while iteratively injecting faults, using a SPICE simulator. The method also allows to identify the nodes of the circuit with higher observabilities to the injected faults, by comparing the obtained fault coverage as a function of frequency. A 130 nm ΣΔ modulator is used as case study to validate the technique under fault injection campaigns. Up to 100% fault coverage is obtained depending on the number of test points. A trade-off is identified, in such a way that a single test point may be used, achieving 95% of fault coverage. The optimized sets of single tone signals can be either combined in a multi-tone testing strategy or sequentially applied during the test application phase. © 2017 IEEE.

关键词： Frequency response

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Evaluation of a mixed-signal design diversity system under radiation effects

Evaluation of a mixed-signal design diversity system under r...

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Latin American Test Workshop, LATW

作者： Carlos J. González Cristiano P. Chenet Matheus Budelon Rafael Galhardo Vaz Odair Gonçalez Tiago R. Balen Graduate Program on Microelectronics (PGMICRO) Federal University of Rio Grande do Sul (UFRGS) Alegre RS Brazil Institute for Advanced Studies (IEAv) SP Brazil

In this work a data acquisition system, based on a design diversity redundant scheme, is tested under total ionizing dose effects. The data acquisition system is composed by three ADCs and two voters, implementing different levels of diversity (architectural and temporal). This system is implemented on a 130nm commercial mixed-signal programmable SoC (PSoC 5), from Cypress Semiconductor. The system was tested under 60 Co gamma radiation with a dose rate of 1 krad(Si)/h reaching a total dose of 242 krad(Si). One of the system copies presented a significant degradation on its linearity during the irradiation, while the others kept the functionality with less severe degradation, evidencing the advantage of using diversity to improve resilience in mixed-signal redundant systems.

关键词： Degradation Radiation effects Redundancy Circuit faults Hardware Integrated circuits Ionizing radiation

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0.3 v supply, 17 ppm/°C 3-transistor picowatt voltage reference 7

0.3 v supply, 17 ppm/°C 3-transistor picowatt voltage refer...

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7th IEEE Latin American Symposium on Circuits and Systems, LASCAS 2016

作者： De Oliveira, Arthur Campos Caicedo, Jhon Gomez Klimach, Hamilton Duarte Bampi, Sergio Microelectronics Graduate Program Federal University of Rio Grande Do sul Porto Alegre RS Brazil

ISBN: (纸本)9781467378352

In this work a novel resistorless MOSFET 3-transistor voltage reference that operates in the picowatt range and occupies very small area is proposed. The circuit is based on a self-cascode structure that is biased in subthreshold condition using the leakage current provided by a reverse biased MOSFET diode. Its electrical behavior is analytically described and a design methodology is presented to allow the transistors sizing for optimal temperature compensation. Simulation results for a standard 130 nm CMOS process are presented to validated the proposed circuit topology. A reference voltage of 85 mV is obtained with a temperature coefficient (TC) of 17.4 ppm/°C and consuming only 7 pW under 0.3 V of power supply at room temperature. Monte Carlo analysis shows that the reference voltage σ/μ © 2016 IEEE.

关键词： Temperature

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