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26th Microoptics Conference, MOC 2021

作者： Kondo, Keisuke Oshima, Hiroki Graduate Program In Optical Engineering Graduate School Of Regional Development And Creativity Utsunomiya University Tochigi321-8585 Japan

ISBN: (纸本)9784863487758

We fabricated an autocorrelator on a silicon photonic chip, which had pulse-width-range switch function. Multiple autocorrelators having different lengths are integrated together, and the range switching is done by selecting one of them. This approach is very simple but shows a great advantage in scalability. © 2021 Japan Society of Applied Physics.

关键词： Silicon photonics

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3D Stackable Vertical Ferroelectric Tunneling Junction (V-FTJ) with on/off Ratio 1500x, Applicable Cell Current, Self-Rectifying Ratio 1000x, Robust Endurance of 109Cycles, Multilevel and Demonstrated Macro Operation Toward High-Density BEOL NVMs

3D Stackable Vertical Ferroelectric Tunneling Junction (V-FT...

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2023 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2023

作者： Lee, J.-Y. Chang, F.-S. Hsiang, K.-Y. Chen, P.-H. Luo, Z.-F. Li, Z.-X. Tsai, J.-H. Liu, C.W. Lee, M.H. National Taiwan Normal University Institute and Undergraduate Program of Electro-Optical Engineering Taiwan National Taiwan University Graduate School of Advance Technology Taiwan National Yang Ming Chiao Tung University Institute of Electronics Department of Electronics Engineering Taiwan National Taiwan Normal University Department of Electrical Engineering Taiwan

ISBN: (纸本)9784863488069

A 1500x ILRS/IHRS with a high cell current of 100 nA/ cell (J = 83 A/cm2) is achieved by antiferroelectric (AFE) vertical ferroelectric tunnel junctions (V-FTJs) that demonstrates multilevel, a self-rectifying rate > 1000x, and macro operation. The stackable 3 D architecture integrating multiple layers of AFE V-FTJs with contact optimization further increases memory density. Robust endurance > 109 cycles at |4V| and stable nonvolatile data retention > 104 sec with extrapolation to 10 years are achieved. The proposed cell contact V-FTJ by AFE is a promising pathway toward BEOL NVMs by a NAND/NOR-based framework. © 2023 JSAP.

关键词： Ferroelectricity

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Photonic Characteristics of U-shape Micro Light-Emitting Diodes and Their Integration with Colloidal Quantum Dots

Photonic Characteristics of U-shape Micro Light-Emitting Dio...

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2023 Conference on Lasers and Electro-Optics, CLEO 2023

作者： Huang, Bo-Ming Jao, Yu-Ming Lin, Fang-Zhong Lee, Guan-Ying Huang, Chung-Ping Kuo, Hao-Chung Lin, Chien-Chung Graduated Institute of Photonics and Optoelectronics National Taiwan University Taipei City Taiwan Institute of Photonic System National Yang Ming Chiao Tung University Tainan71150 Taiwan Graduate Program of College of Photonics College of Photonics National Yang Ming Chiao Tung University Tainan City Taiwan Institute of Electro-Optical Engineering National Yang Ming Chiao Tung University Hsinchu Taiwan

An InGaN U-shape micro LED is fabricated and integrated with colloidal quantum dots. The extracted SRH coefficient showed a 3.2-time increase of surface recombination velocity, while the lifetime of the quantum dot la... 详细信息

ISBN: (纸本)9781957171258

关键词： Semiconductor quantum dots

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An Ultra-High Concentration of Colloidal Quantum Dots for Efficient Light Generation in a Packaged LED

An Ultra-High Concentration of Colloidal Quantum Dots for Ef...

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Conference on Lasers and Electro-Optics (CLEO)

作者： Tzu Chia Huang Ching Chang Chang-Ping Huang Hao-Chung Kuo Chien-Chung Lin Graduate Institute of Photonics and Optoelectronics National Taiwan University Taipei City Taiwan Graduate Program of College of Photonics College of Photonics National Yang Ming Chiao Tung University Tainan City Taiwan Department of Photonics Institute of Electro-Optical Engineering National Yang Ming Chiao Tung University Hsinchu Taiwan

ISBN: (纸本)9798350369311

In this study, we propose various methods to increase the colloidal quantum dot (CQD) efficiency in a packaged LED. The amount of CQD is much higher than the regular concentration with some of them over 40% of weight percentage. The microcarriers were applied to hold the CQDs and an 63.5% improvement of color conversion efficiency can be observed.

关键词： Quantum dots Loading Color Light emitting diodes Market research Electro-optical waveguides Photonics

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Glucose Sensing Utilizing Complex-Valued Neural Networks 23

Glucose Sensing Utilizing Complex-Valued Neural Networks

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4th International Conference on Computing, Networks and Internet of Things, CNIOT 2023

作者： Lv, Yiqi Meng, Xiang Luo, Yong Pei, Yan The Key Laboratory of Specialty Fiber Optics and Optical Access Networks Shanghai University China and Jt. International Research Laboratory of Specialty Fiber Optics and Advanced Communication Shanghai University Shanghai China Doctoral Program Grad. Sch. of Comp. Science and Engineering Graduate Department of Computer and Information Systems University of Aizu Aizuwakamatsu Japan Computer Science Division University of Aizu Aizuwakamatsu Japan

ISBN: (纸本)9798400700705

This paper proposes a Complex-Valued Neural Network (CVNN) for glucose sensing in milli-meter wave (mmWave). Based on the propagation characteristics of millimeter wave in glucose medium, we obtain the S21 parameter of glucose with the concentration range of 0-300mg/dL in the 60-80 GHz frequency band by High Frequency Structure Simulator (HFSS) simulations. Then we combine the sensing model with a neural network to detect and predict the glucose concentration relying on the learning ability of the neural network. In the prediction of the concentration of unknown samples, the absolute error between the predicted value and the true value is within 5mg/dL, which confirms the ability of the proposed CVNN model. © 2023 ACM.

关键词： Millimeter waves

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FeRAM Recovery up to 200 Periods with Accumulated Endurance 1012 Cycles and an Applicable Array Circuit toward Unlimited eNVM Operations

FeRAM Recovery up to 200 Periods with Accumulated Endurance ...

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Symposium on VLSI Technology

作者： K.-Y. Hsiang J.-Y. Lee F.-S. Chang Z.-F. Lou Z.-X. Li Z.-H. Li J.-H. Chen C. W. Liu T.-H. Hou M. H. Lee Institute and Undergraduate Program of Electro-Optical Engineering National Taiwan Normal University Taiwan Institute of Electronics National Yang Ming Chiao Tung University Taiwan Graduate School of Advance Technology National Taiwan University Taiwan

Asymmetric Field Cycling Recovery (AFCR) with a low E-field is proposed for the first time to extend the endurance cycles of a ferroelectric (FE) capacitor and is experimentally demonstrated for 200 periods and accumulated to 10 12 switching cycles. Positive and negative Asymmetric minor loops (AmL) with AFCR achieve the nondegradation and complete restoration of $\triangle 2 \mathrm{P}_{\mathrm{r}}$ toward the prospect of unlimited operation. Furthermore, an FeRAM array circuit with an inverting amplifier is designed to execute the Write/Read and Recovery procedures simultaneously by AFCR scheme.

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Impedance Matching Prediction and Optimization of Yagi-Uda Antenna

Impedance Matching Prediction and Optimization of Yagi-Uda A...

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SBMO/IEEE MTT-S International Conference on Microwave and Optoelectronics (IMOC)

作者： Pedro A. B. Leão T. H. Brandão Arismar Cerqueira S. Graduate Program in Electrical Engineering Federal University of Minas Gerais Belo Horizonte MG Brazil Lab. of Wireless and Optical Convergent Access (WOCA) National Institute of Telecommunications (INATEL) Santa Rita do Sapucaí MG Brazil

This work presents the development of a methodology that allows accurate impedance matching estimation of a Yagi-Uda antenna using a Multilayer Perceptron artificial neural network. Additionally, results of dimensions that minimize the reflection coefficient are presented. These dimensions were defined using the Non-dominated Sorting Genetic Algorithms multi-objective optimization algorithm. The ANSYS HFSS simulation software is utilized to generate the artificial neural network database and also to validate the proposed methodology.

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Cryogenic Endurance of Anti-ferroelectric and Ferroelectric $\text{Hf}_{1-\mathrm{x}}\text{Zr}_{\mathrm{X}}\mathrm{O}_{2}$ for Quantum Computing Applications

Cryogenic Endurance of Anti-ferroelectric and Ferroelectric ...

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Annual International Symposium on Reliability Physics

作者： K.-Y. Hsiang J.-Y. Lee Z.-F. Lou F.-S. Chang Z.-X. Li C. W. Liu T.-H. Hou P. Su M. H. Lee Institute and Undergraduate Program of Electro-Optical Engineering National Taiwan Normal University Taipei Taiwan Department of Electronics Engineering and Institute of Electronics National Yang Ming Chiao Tung University Hsinchu Taiwan Graduate School of Advance Technology National Taiwan University Taipei Taiwan

The classical memory device with cryogenic operation is in high demanded for quantum information processing. The cryogenic endurance of anti-ferroelectric (AFE) and ferroelectric (FE) $\text{Hf}_{1-\mathrm{x}}\text{Zr}_{\mathrm{x}}\mathrm{O}_{2}$ capacitors is investigated for $\sim 10^{10}$ cycles (80 K). Moreover, the AFE capacitor exhibits a high speed response with ~ 80% normalized switching $2\mathrm{P}_{\mathrm{r},\text{sw}}$ for $\mathrm{t}_{\mathrm{p}}= 1\ \mu\mathrm{s}$ compared to ~ 60% for the FE capacitor at 80 K.

关键词： Temperature Quantum computing Capacitors Morphology Cryogenics Switches Information processing

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3D Stackable Vertical Ferroelectric Tunneling Junction (V-FTJ) with on/off Ratio 1500x, Applicable Cell Current, Self-Rectifying Ratio 1000x, Robust Endurance of 10⁹ Cycles, Multilevel and Demonstrated Macro Operation Toward High-Density BEOL NVMs

3D Stackable Vertical Ferroelectric Tunneling Junction (V-FT...

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Symposium on VLSI Technology

作者： J.-Y. Lee F.-S. Chang K.-Y. Hsiang P.-H. Chen Z.-F. Luo Z.-X. Li J.-H. Tsai C. W. Liu M. H. Lee Institute and Undergraduate Program of Electro-Optical Engineering National Taiwan Normal University Taiwan Graduate School of Advance Technology National Taiwan University Taiwan Department of Electronics Engineering Institute of Electronics National Yang Ming Chiao Tung University Taiwan Department of Electrical Engineering National Taiwan Normal University Taiwan

A 1500x I LRS /I HRS with a high cell current of ~100 nA/ cell (J = 83 A/cm 2 ) is achieved by antiferroelectric (AFE) vertical ferroelectric tunnel junctions (V-FTJs) that demonstrates multilevel, a self-rectifying rate > 1000x, and macro operation. The stackable 3 D architecture integrating multiple layers of AFE V-FTJs with contact optimization further increases memory density. Robust endurance > 10 9 cycles at |4V| and stable nonvolatile data retention > 10 4 sec with extrapolation to 10 years are achieved. The proposed cell contact V-FTJ by AFE is a promising pathway toward BEOL NVMs by a NAND/NOR-based framework.

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Growth of Wafer-Scale Single-Crystal 2D Semiconducting Transition Metal Dichalcogenide Monolayers

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Advanced Science 2024年第11期11卷 e2307839页

作者： Singh, Jitendra Astarini, Nadiya Ayu Tsai, Meng-Lin Venkatesan, Manikandan Kuo, Chi-Ching Yang, Chan-Shan Yen, Hung-Wei Department of Materials Science and Engineering National Taiwan University of Science and Technology Taipei City106335 Taiwan Department of Physics Udit Narayan Post Graduate College Padrauna Uttar Pradesh Kushinagar274304 India Department of Molecular Science and Engineering Institute of Organic and Polymeric Materials National Taipei University of Technology Taipei City106344 Taiwan Institute and Undergraduate Program of Electro-Optical Engineering National Taiwan Normal University Taipei City11677 Taiwan Department of Materials Science and Engineering National Taiwan University Taipei City106319 Taiwan

Due to extraordinary electronic and optoelectronic properties, large-scale single-crystal two-dimensional (2D) semiconducting transition metal dichalcogenide (TMD) monolayers have gained significant interest in the development of profit-making cutting-edge nano and atomic-scale devices. To explore the remarkable properties of single-crystal 2D monolayers, many strategies are proposed to achieve ultra-thin functional devices. Despite substantial attempts, the controllable growth of high-quality single-crystal 2D monolayer still needs to be improved. The quality of the 2D monolayer strongly depends on the underlying substrates primarily responsible for the formation of grain boundaries during the growth process. To restrain the grain boundaries, the epitaxial growth process plays a crucial role and becomes ideal if an appropriate single crystal substrate is selected. Therefore, this perspective focuses on the latest advances in the growth of large-scale single-crystal 2D TMD monolayers in the light of enhancing their industrial applicability. In the end, recent progress and challenges of 2D TMD materials for various potential applications are highlighted. © 2023 The Authors. Advanced Science published by Wiley-VCH GmbH.

关键词： Single crystals

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