We successfully fabricated a power-saving, high brightness and uniformity field emission planar lamp (FEL) by simply screen printing process. In order to maximize the output brightness and reach a good lighting unifor...
We successfully fabricated a power-saving, high brightness and uniformity field emission planar lamp (FEL) by simply screen printing process. In order to maximize the output brightness and reach a good lighting uniformity, we create an innoviative emitter pattern and optimize the FEL assembly process. By the innoviative spiral emitter pattern and optimization assembly process, we fabricated the high brightness and uniform lighting FEL. The lighting area of FEL is 325×37 mm 2 . The FEL can be operated at DC voltage 6.56 KVwith 2 mA current and the brightness is greater than 28000 Cd/m 2 .
The field emission backlight unit (FEBLU) for liquid crystal display (LCD) panel was fabricated in this work. In order to avoid the space charge on the side of the spacer, the spacer is coated with the TiO 2 which act...
The field emission backlight unit (FEBLU) for liquid crystal display (LCD) panel was fabricated in this work. In order to avoid the space charge on the side of the spacer, the spacer is coated with the TiO 2 which acts as the charge leakage layer. By introducing of the TiO 2 coated spacers, the assembly of the FEBLU becomes very easy. We have developed the stable 7 inch FEBLU LCD panel which has no discharged breakdown. The FEBLU can be turn-on at (E 0 )= 1.26 V/μm, working at 2.64 kV applied field.
We have successfully fabricated 4.75-inch CNT-FED with sturdy metal plates as spacer. The metal plates were etched numerous holes and coated oxide to supply high efficient passage for electrons. We observed that sever...
We have successfully fabricated 4.75-inch CNT-FED with sturdy metal plates as spacer. The metal plates were etched numerous holes and coated oxide to supply high efficient passage for electrons. We observed that several metal plates not only helped cathode to shield high electric field from anode but also supplied sturdy spacer between cathode and anode. In this work, a uniformity lighting image is obtained and capable of being applied to large-area CNT-FEDs.
In this paper, the carbon nanotubes (CNTs) are synthesized on the micro graphite flakes using mixtures of C 2 H 2 and H 2 gases by thermal chemical vapor deposition. We spin the graphite solution on the silicon wafer ...
In this paper, the carbon nanotubes (CNTs) are synthesized on the micro graphite flakes using mixtures of C 2 H 2 and H 2 gases by thermal chemical vapor deposition. We spin the graphite solution on the silicon wafer and dry it, then synthesize the CNTs on the graphite flakes. The synthetic process is a catalyst free technique and the CNTs have no metal inside, so this is an easier technique for synthesizing the CNTs. We change the synthetic time to obtain the optimal conditions for synthesis of the CNTs. The experimental results show that the density and quality of the CNTs could be controlled significantly by the synthetic time. Besides, the field emission properties of the CNTs are also affected greatly by it. The emission current density of the CNTs is 0.5 mA/cm 2 at 3 V/μm, and the turn on field is 2.3 V/μm.
The purpose of this paper is to fabricate nano-crystalline graphite (NCG) material by reactive R.F. magnetron sputtering deposition, then scrape the NCG films to create NCG powder, and finally manufacture this into NC...
The purpose of this paper is to fabricate nano-crystalline graphite (NCG) material by reactive R.F. magnetron sputtering deposition, then scrape the NCG films to create NCG powder, and finally manufacture this into NCG paste. When depositing the NCG films, the atomic hydrogen from hydrogen and methane was introduced to increase the surface roughness of the NCG films, etch the NCG films to create the NCG sheet structure. It was found that the electron field emission properties are not affected through the heat treatment process during screen-printing. The NCG emitter patterns were manufactured successfully on cathode by printing the NCG paste. The current density of the emission site is 340.1 μA/cm 2 at 11 V/μm.
Wafer bonding technology is applied to the GaN/quantum dots/GaN system, where CdSe/ZnS Quantum Dots serve as both the active layer and the binding layer. Photoluminescence is observed from quantum dots following wafer...
详细信息
We successfully fabricated a power-saving, high brightness and uniformity field emission planar lamp (FEL) by simply screen printing process. In order to maximize the output brightness and reach a good lighting unifor...
详细信息
We successfully fabricated a power-saving, high brightness and uniformity field emission planar lamp (FEL) by simply screen printing process. In order to maximize the output brightness and reach a good lighting unifor...
详细信息
ISBN:
(纸本)9781618390950
We successfully fabricated a power-saving, high brightness and uniformity field emission planar lamp (FEL) by simply screen printing process. In order to maximize the output brightness and reach a good lighting uniformity, we create an innoviative emitter pattern and optimize the FEL assembly process. By the innoviative spiral emitter pattern and optimization assembly process, we fabricated the high brightness and uniform lighting FEL. The lighting area of FEL is 325 x 37 mm2. The FEL can be operated at DC voltage 6.56 KV with 2 mA current and the brightness is greater than 28000 Cd/m2.
Recent progress on a high-resolution, photon-counting gamma-ray and x-ray imager called BazookaSPECT is presented. BazookaSPECT is an example of a new class of scintillation detectors based on integrating detectors su...
详细信息
In this study we modified the sprawling carbon nanotubes (CNTs) from the well-aligned CNTs by ion bombardment technology. After CNTs growth, the samples are set into the plasma processing system. The field emission pr...
详细信息
In this study we modified the sprawling carbon nanotubes (CNTs) from the well-aligned CNTs by ion bombardment technology. After CNTs growth, the samples are set into the plasma processing system. The field emission properties were improved after hydrogen ion bombardment. The optimal power is 60 W for emission application because of the appropriate outstanding CNTs density. The turn-on field could be decreased to 0.53 V/um.
暂无评论