There has been an increase in demand for novel nonvolatile-memory technology for low-power, high speed and high scalability because of development of digital technology. With this background, various types of memory a...
There has been an increase in demand for novel nonvolatile-memory technology for low-power, high speed and high scalability because of development of digital technology. With this background, various types of memory are now enthusiastically developed to overcome the limitations of traditional Si-based memory which is difficulty to miniaturize the device and to advance high performance. Resistive random access memory (ReRAM) is a good candidate for next generation devices due to its high speed, low voltage consumption and high scalability. Recently flexible electronic devices such as wearable electronics and optoelectronics have attracted interest, so flexible ReRAM devices are also required. Metal oxide thin film based memory in ReRAM have hitherto been studied mainly as next generation nonvolatile memory devices and have shown good properties such as retention, endurance, and programming characteristics. However, ReRAM based on metal oxide thin film has limitations of fabrication process for flexible device due to their material properties. ReRAM using graphene oxide (GO) is the most promising candidate for the flexible device due to graphene oxide's great electrical and mechanical properties. Graphene oxide ReRAM can be fabricated at room temperature on flexible substrates where metal oxides cannot be. Despite of its excellent properties, the resistive switching mechanisms remain unclear. It is generally assumed that filamentary theory and oxygen migration theory are the major mechanisms of resistive switching phenomena. In this work, we demonstrate the resistive switching mechanisms of ReRAM with laterally structured devices, which have two-terminal electrodes in the same plane. The laterally structured graphene oxide ReRAM devices are fabricated by simple spin-coating method on silicon dioxide substrates. The aluminum (Al) electrodes are deposited on spin-coated grapheme oxide layer by thermal evaporation as shown in Figure 1a. These Al/GO/Al lateral devices sho
Manufacturing methods of conductive electrode is essential technology for printable electronics such as radio frequency identification tags (RFID), thin film transistor (TFT), ultra high frequency antennas and solar c...
Manufacturing methods of conductive electrode is essential technology for printable electronics such as radio frequency identification tags (RFID), thin film transistor (TFT), ultra high frequency antennas and solar cell. Various fabrication methods of electrodes for printable electronics have been suggested to screen printing, gravure printing and inkjet printing. However, these methods have difficulties to the control of printing pressure, thickness, nozzle blocking, viscosity of ink and coffee ring effect. New technique for electrode for printable electronics needs to perform at room temperature and ambient condition. In addition, copper nanoparticles are good prospective candidate to replace high cost silver because of low-cost, abundant deposit and high conductivity. However, copper nanoparticles have the limitation which is highly oxidative materials and these drawbacks limited practical printing process. To overcome these limitations, conductive materials for electrodes requires high oxidative stable nanoparticles and low cost materials. In this study, we synthesized high oxidative stable, conductive Cu3Sn nanoparticles and fabricated electrode by pressure assisted method at room temperature and ambient condition. Prepared Cu3Sn nanoparticles were confirmed using X-ray diffraction (XRD) and Energy Dispersive X-ray Spectrum (EDS) with High Angle Annular Dark-Field Scanning TEM (HAADF-STEM). Measurement of electrical conductivity was carried out with the 4-point probe methods depending on various value of pressure. The conductive electrodes were obtained by pressure at 530MPa and showed electrical resistivity of less than 19.8 µΩ cm. Electrical resistivity of fabricated electrodes is similar to that of bulk Cu3Sn material (8.8. µΩ•cm). This result is caused by numerous and three dimensional contact of each conductive nanoparticle. To investigate the contact of each nanoparticle, Cross-sectional TEM analysis of pressed nanoparticles was performed. Also, we analy
The ellipsometric spectra(Ψ and ?) of coupled metallic nanoparticles on a stretchable substrate have been studied via the spherical-harmonics based Green's function *** use Au trimmer nanoparticles and dielectric...
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(纸本)9781845648534
The ellipsometric spectra(Ψ and ?) of coupled metallic nanoparticles on a stretchable substrate have been studied via the spherical-harmonics based Green's function *** use Au trimmer nanoparticles and dielectric *** calculated ellipsometric spectra show a plasmonic resonance peak with asymmetric *** a trimmer of metallic nanoparticles on a stretchable substrate,the separation between nanoparticles in the trimmer can be varied by the applied mechanical *** find that both the plasmonic resonance peak position and the signal strength at the resonance frequency are sensitive to the gap distance in the trimmer,which can be controlled by the stretchable *** simulation results indicate that the sensitivity of the plasmonic resonance lineshape to the inter-particle distance allows this coupled nanoparticle system to be used as a biosensor or mechanical *** experimental ellipsometric spectra for closely-spaced metallic nanoparticles on a PDMS substrate are also reported.
The CuFeSe2 is a member of the I-III-VI2 semiconductors, whereas it shows different physical properties from the chalcopyrite family, include the tetragonal structure, the small band gap ∼0.16 eV and the weak magneti...
The CuFeSe2 is a member of the I-III-VI2 semiconductors, whereas it shows different physical properties from the chalcopyrite family, include the tetragonal structure, the small band gap ∼0.16 eV and the weak magnetic behavior. Only a few articles focused on this material in recent years. The measurements of the Seebeck coefficient and thermal conductivity of the high quality CuFeSe2 thin film could provide valuable information for its thermal application. In this report, a CuFeSe2 thin film with thickness ∼200 nm on SiO2/Si substrate was prepared by pulse laser deposition (PLD). The highly crystallized film shows a preferred orientation (h 0 0) normal to the film surface. Two pairs of heater/sensor Au strips were thermally deposited on the thin film and substrate separately for thermal conductivity measurement using differential 3ω method. The Seebeck coefficient across the film plane was directly measured by two additional EMF probes below and above the film with temperature gradient generated by heater/sensor at frequency 2ω. The temperature dependence of thermal conductivity and Seebeck coefficient were measured in a wide temperature range from 150 to 300 K. The room-temperature thermal conductivity and Seebeck coefficient are obtained to be 3.5 W/m-K and −108 μV/K respectively.
A series of tertiary amine quinuclidine-capped cadmium selenide (Q-CdSe) quantum dots (QDs) of ~4 nm in diameter was successfully synthesized via ligand exchange process in which the original hydrophobic trioctylphosp...
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A series of tertiary amine quinuclidine-capped cadmium selenide (Q-CdSe) quantum dots (QDs) of ~4 nm in diameter was successfully synthesized via ligand exchange process in which the original hydrophobic trioctylphosphine oxide (TOPO) ligand bound to QDs was replaced with stronger quinuclidine derivatives, quinuclidine (Q1), 3-quinuclidinone (Q2) and 3-quinuclidinol (Q3). The ligand exchange of TOPO by Q probed using the combined fluorescence and absorption spectroscopy was achieved in just only a few minutes. Moreover, disappearance of prominent C-H aliphatic stretching (~2900 cm -1 ) and phosphate signal (35 ppm) of TOPO-capped CdSe after replacement with Q as revealed in FT-IR and solid state 31 P-NMR spectra was observed indicating efficient fast ligand exchange.
We demonstrated Ag/SiO2 metallic disk structure can be applied as an efficient narrow stop band filter in the IR region. The absorption spectra of such structure are investigated both theoretically and experimentally....
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Gold nanobowls (AuNBs) of ~5 nm in diameter grown on multiwalled carbon nanotubes (MWCNT) were successfully synthesized via galvanic replacement of silver nanoparticles (AgNPs). A 3-fold Raman signal enhancement of MW...
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Gold nanobowls (AuNBs) of ~5 nm in diameter grown on multiwalled carbon nanotubes (MWCNT) were successfully synthesized via galvanic replacement of silver nanoparticles (AgNPs). A 3-fold Raman signal enhancement of MWCNT was observed when Au replacement with Ag approached to completion. Moreover, AuNBs can be readily released from CNT surface via sonication with 1-octanethiol (OT). Our current method demonstrates a novel technique on producing smallest dimension of AuNBs so far simply achieved in wet chemical process.
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