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Landau Polaritons in a Full-Dielectric Three-Dimensional Photonic-Crystal Cavity

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Landau Polaritons in a Full-Dielectric Three-Dimensional Pho...

Conference on Lasers and Electro-Optics (CLEO)

作者： Fuyang Tay Ali Mojibpour Shuang Liang Andrey Baydin Arash Ahmadivand Nicolas Marquez Peraca Hongjing Xu Geoff C. Gardner Michael J. Manfra David Hagenmüller Junichiro Kono Department of Electrical and Computer Engineering Rice University Houston Texas USA Applied Physics Graduate Program Smalley-Curl Institute Rice University Houston Texas USA Department of Physics and Astronomy Purdue University West Lafayette IN USA Birck Nanotechnology Center Purdue University West Lafayette IN USA Smalley-Curl Institute Rice University Houston Texas USA Department of Physics and Astronomy Rice University Houston Texas USA Microsoft Quantum Purdue Purdue University West Lafayette IN USA School of Electrical and Computer Engineering Purdue University West Lafayette IN USA School of Materials Engineering Purdue University West Lafayette IN USA ISIS (UMR 7006) Université de Strasbourg and CNRS Strasbourg France Department of Materials Science and Nano Engineering Rice University Houston Texas USA

We fabricated a full-dielectric three-dimensional photonic-crystal cavity containing an ultrahigh-mobility two-dimensional electron gas. By applying a strong perpendicular magnetic field, we created Landau polaritons ... 详细信息

ISBN: (数字)9781957171050

ISBN: (纸本)9781665466660

关键词： Couplings HEMTs Laser modes Polaritons Magnetic fields Gas lasers MODFETs

programmable threshold sensing in wireless devices using Ising dynamics

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Nature Electronics 2025年 1-8页

作者： Nicolas Casilli Hussein M. E. Hussein Ryan Tetro Luca Colombo Matteo Rinaldi Cristian Cassella Seunghwi Kim Andrea Alù Philip X.-L. Feng Institute for Nano Systems Innovation (NanoSI) Department of Electrical and Computer Engineering Northeastern University Boston MA USA Photonics Initiative Advanced Science Research Center City University of New York New York City NY USA Physics Program Graduate Center City University of New York New York City NY USA Department of Electrical and Computer Engineering University of Florida Gainesville FL USA

Ising machines—comprising dissipatively coupled nodes capable of emulating the behaviour of ferromagnetic spins—can form analogue computing engines that surpass the sequential processing constraints of von Neumann architectures. However, the incorporation of Ising dynamics into radio-frequency wireless technologies remains limited, especially in terms of their potential to enhance wireless sensing capabilities. Here we report a passive wireless sensor that uses Ising dynamics to accurately implement threshold sensing. The device correlates the occurrence of violations in a sensed parameter with transitions in the coupling state of two parametric oscillators acting as Ising spins. As a result, the accuracy of the device is unaffected by distortions in its input and output signals due to multipath and is less prone to clutter caused by co-site interference. We illustrate the potential of the approach in temperature threshold sensing using a microfabricated lithium niobate microelectromechanical temperature sensor to couple two radio-frequency parametric oscillators, and show that such a system allows the sensor threshold to be wirelessly reprogrammed.

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Imaging 3D Chemistry at 1 nm Resolution with Fused Multi-Modal Electron Tomography

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arXiv 2023年

作者： Schwartz, Jonathan Di, Zichao Wendy Jiang, Yi Manassa, Jason Pietryga, Jacob Qian, Yiwen Cho, Min Gee Rowell, Jonathan L. Zheng, Huihuo Robinson, Richard D. Gu, Junsi Kirilin, Alexey Rozeveld, Steve Ercius, Peter Fessler, Jeffrey A. Xu, Ting Scott, Mary Hovden, Robert Department of Materials Science and Engineering University of Michigan Ann ArborMI United States Mathematics and Computer Science Division Argonne National Laboratory LemontIL United States Advanced Photon Source Facility Argonne National Laboratory LemontIL United States Department of Material Science and Engineering Northwestern University EvanstonIL United States Department of Materials Science and Engineering University of California at Berkeley BerkeleyCA United States Department of Chemistry and Chemical Biology Cornell University IthacaNY United States Argonne Leadership Computing Facility Argonne National Laboratory LemontIL United States Department of Material Science and Engineering Cornell University IthacaNY United States Kavli Institute at Cornell for Nanoscale Science Cornell University IthacaNY United States Dow Chemical Co. MidlandMI United States National Center for Electron Microscopy Molecular Foundry Lawrence Berkeley National Laboratory BerkeleyCA United States Department of Electrical Engineering and Computer Science University of Michigan Ann ArborMI United States Materials Science Division Lawrence Berkeley National Laboratory BerkeleyCA United States Applied Physics Program University of Michigan Ann ArborMI United States

Measuring the three-dimensional (3D) distribution of chemistry in nanoscale matter is a longstanding challenge for metrological science. The inelastic scattering events required for 3D chemical imaging are too rare, requiring high beam exposure that destroys the specimen before an experiment completes. Even larger doses are required to achieve high resolution. Thus, chemical mapping in 3D has been unachievable except at lower resolution with the most radiation-hard materials. Here, high-resolution 3D chemical imaging is achieved near or below one nanometer resolution in a Au-Fe3O4 metamaterial, Co3O4 - Mn3O4 core-shell nanocrystals, and ZnS-Cu0.64S0.36 nanomaterial using fused multi-modal electron tomography. Multi-modal data fusion enables high-resolution chemical tomography often with 99% less dose by linking information encoded within both elastic (HAADF) and inelastic (EDX / EELS) signals. Now sub-nanometer 3D resolution of chemistry is measurable for a broad class of geometrically and compositionally complex materials. © 2023, CC BY.

关键词： Zinc sulfide

Electron mobility of SnO2 from first principles

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arXiv 2024年

作者： Wang, Amanda Bushick, Kyle Pant, Nick Lee, Woncheol Zhang, Xiao Leveillee, Joshua Giustino, Feliciano Poncé, Samuel Kioupakis, Emmanouil Department of Materials Science and Engineering University of Michigan Ann ArborMI48109 United States Applied Physics Program University of Michigan Ann ArborMI48109 United States Department of Electrical and Computer Engineering University of Michigan Ann ArborMI48109 United States Oden Institute for Computational Engineering and Sciences The University of Texas at Austin AustinTX78712 United States Department of Physics The University of Texas at Austin AustinTX78712 United States European Theoretical Spectroscopy Facility Institute of Condensed Matter and Nanosciences Université catholique de Louvain Chemin des Étoiles 8 Louvain-la-NeuveB-1348 Belgium WEL Research Institute Avenue Pasteur 6 Wavre1300 Belgium

The transparent conducting oxide SnO2 is a wide bandgap semiconductor that is easily n-type doped and widely used in various electronic and optoelectronic applications. Experimental reports of the electron mobility of this material vary widely depending on the growth conditions and doping concentrations. In this work, we calculate the electron mobility of SnO2 from first principles to examine the temperature- and doping-concentration dependence, and to elucidate the scattering mechanisms that limit transport. We include both electron-phonon scattering and electron-ionized impurity scattering to accurately model scattering in a doped semiconductor. We find a strongly anisotropic mobility that favors transport in the direction parallel to the c-axis. At room temperature and intrinsic carrier concentrations, the low-energy polar-optical phonon modes dominate scattering, while ionized-impurity scattering dominates above 1018 cm-3 Copyright © 2024, The Authors. All rights reserved.

关键词： Electron mobility

Interpretable inverse-designed cavity for on-chip nonlinear and quantum optics

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arXiv 2023年

作者： Jia, Zhetao Qarony, Wayesh Park, Jagang Hooten, Sean Wen, Difan Zhiyenbayev, Yertay Seclì, Matteo Redjem, Walid Dhuey, Scott Schwartzberg, Adam Yablonovitch, Eli Kanté, Boubacar Department of Electrical Engineering and Computer Sciences University of California at Berkeley BerkeleyCA94720 United States Hewlett Packard Labs Hewlett Packard Enterprise 820 N. McCarthy Blvd. MilpitasCA95035 United States Applied Science and Technology Graduate Group University of California at Berkeley BerkeleyCA94720 United States Molecular Foundry Lawrence Berkeley National Laboratory BerkeleyCA94720 United States Materials Sciences Division Lawrence Berkeley National Laboratory BerkeleyCA94720 United States

Inverse design is a powerful tool in wave-physics and in particular in photonics for compact, high-performance devices. To date, applications have mostly been limited to linear systems and it has rarely been investigated or demonstrated in the nonlinear regime. In addition, the "black box" nature of inverse design techniques has hindered the understanding of optimized inverse-designed structures. We propose an inverse design method with interpretable results to enhance the efficiency of on-chip photon generation rate through nonlinear processes by controlling the effective phase-matching conditions. We fabricate and characterize a compact, inverse-designed device using a silicon-on-insulator platform that allows a spontaneous four-wave mixing process to generate photon pairs at 1.1MHz with a coincidence to accidental ratio of 162. Our design method accounts for fabrication constraints and can be used for scalable quantum light sources in large-scale communication and computing applications. © 2023, CC BY.

关键词： Linear systems

Visualizing Field-free Deterministic Magnetic Switching of all–van der Waals Spin-Orbit Torque System Using Spin Ensembles in Hexagonal Boron Nitride

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arXiv 2025年

作者： Zhang, Xi Zhou, Jingcheng Hu, Chaowei Deng, Kuangyin Wang, Chuangtang Agarwal, Nishkarsh Jin, Hanshang Al-Matouq, Faris A. Xu, Stelo Trivedi, Roshan S. Li, Senlei Rathi, Sumedh Lu, Hanyi Jiang, Zhigang Taufour, Valentin Hovden, Robert Zhao, Liuyan Cheng, Ran Xu, Xiaodong Chu, Jiun-Haw Du, Chunhui Rita Wang, Hailong School of Physics Georgia Institute of Technology AtlantaGA30332 United States Department of Physics University of Washington SeattleWA98105 United States Department of Electrical and Computer Engineering University of California RiversideCA92521 United States Department of Physics University of Michigan Ann ArborMI48109 United States Department of Materials Science and Engineering University of Michigan Ann ArborMI48109 United States Department of Physics and Astronomy University of California DavisCA95616 United States Department of Physics University of California San Diego La Jolla CA92093 United States Applied Physics Program University of Michigan Ann ArborMI48109 United States Department of Physics and Astronomy University of California RiversideCA92521 United States Department of Materials Science and Engineering University of Washington SeattleWA98105 United States

Recently, optically active spin defects embedded in van der Waals (vdW) crystals have emerged as a transformative quantum sensing platform to explore cutting-edge materials science and quantum physics. Taking advantage of excellent solid-state integrability, this new class of spin defects can be arranged in controllable nanoscale proximity of target materials in vdW heterostructures, showing great promise for improving spatial resolution and field sensitivity of current sensing technologies. Building on this state-of-the-art measurement platform, here we report hexagonal boron nitride-based quantum imaging of field-free deterministic magnetic switching of room-temperature two-dimensional magnet Fe3GaTe2 in an all-vdW spin-orbit torque (SOT) system. By visualizing SOT-driven variations of nanoscale Fe3GaTe2 magnetic stray field profile under different conditions, we have revealed how the observed magnetic switching evolves from deterministic to indeterministic behavior due to the interplay between out-of-plane spins, in-plane spins and Joule heating. This understanding, which is otherwise difficult to access by conventional transport measurements, offers valuable insights on material design, testing, and evaluation of next-generation vdW spintronic devices. Copyright © 2025, The Authors. All rights reserved.

关键词： Van der Waals forces

Electrochemical biosensor based on an atomic layered composite of graphene oxide/graphene as an electrode material towards selective and sensitive detection of miRNA-21

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Microchemical Journal 2024年 199卷

作者： Huang, Min-Shin Govindasamy, Mani Chinnapaiyan, Sathishkumar Lin, Yi-Ting Lu, Shao-Yang Samukawa, Seiji Huang, Chi-Hsien Department of Materials Engineering Ming Chi University of Technology New Taipei City 243303 Taiwan International Ph.D. Program in Innovative Technology of Biomedical Engineering and Medical Devices Ming Chi University of Technology New Taipei City 24303 Taiwan Centre for Applied Research Saveetha School of Engineering Saveetha Institute of Medical and Technical Sciences (SIMATS) Chennai-602105 Tamil Nadu India Institute of Fluid Science Tohoku University Sendai 980-8577 Japan College of Electrical and Computer Engineering National Yang Ming Chiao Tung University Hsinchu 300093 Taiwan Division of Rheumatology Allergy and Immunology Chang Gung Memorial Hospital Taoyuan City 33305 Taiwan College of Engineering Chang Gung University Taoyuan City 33302 Taiwan

Development of an efficient technique towards the detection of miRNAs is highly significant for the timely diagnosis and prognosis of cancers. In this study, we utilized the chemical vapor deposition (CVD) technique to grow bilayer graphene (BLG) on copper foil and subsequently transferred the BLG to fluorine doped tin oxide (FTO) substrate via a facile wet transfer technique. The upper layer of the BLG was modified to graphene oxide (GO) with a low damage plasma treatment (LDPT) process to serve as a biomolecule receiving layer and the lower graphene layer (G) serves as an electron transport layer. The developed GO/G/FTO platform offers superior sensing ability towards the miRNA-21. The results demonstrated that the proposed GO/G/FTO substrate detect the miRNA-21 with a wide linear range (10 fM ∼ 1 nM), low limit of detection (3.18 fM), high sensitivity (0.6 mApM⁻¹cm⁻²), selectivity and stability via the differential pulse voltammetry method. Additionally, the sensors can efficiently discriminate the target miRNA-21 from its complementary base mismatched counterparts. The proposed approach serves as an excellent tool for the early diagnosis of diseases. © 2024 Elsevier B.V.

关键词： Atomic layer oxidation Biosensor Cancer biomarkers Electrochemical Graphene oxide Plasma treatment

Voltage Levels and Reactive Power in Distribution Networks with High Integration of Distributed Photovoltaic Generation

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Voltage Levels and Reactive Power in Distribution Networks w...

2019 IEEE PES Conference on Innovative Smart Grid Technologies, ISGT Latin America 2019

作者： Darui, Caroline B. F. Lucca, Tiago G. Abaide, Alzenira Da R. Da Veiga, Matheus F. Da Cruz, Matheus S. Knak Neto, Nelson Wüst, Lucas L. Figueiró, Iuri C. Federal University of Santa Maria Graduate Program in Electrical Engineering Santa Maria Brazil URI Santo Ângelo Department of Engineering and Computer Science Santo Ângelo Brazil

ISBN: (纸本)9781538695678

The Brazilian electrical system is undergoing many changes due to the exponential growth of photovoltaic systems connected to the grid (PV). This increase may affect power quality parameters, such as reduction of power factor and increase of voltage levels. This work aims to model and simulate a low voltage distribution network with high levels of integration of PV systems in order to verify how the voltage and reactive parameters behave in these cases. It was used new load curve models, the Monte Carlo method and the OpenDSS software. © 2019 IEEE.

关键词： Monte Carlo methods

Evolution of Incommensurate Charge Density Waves Quantified with In Situ TEM

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Microscopy and Microanalysis 2024年第SUPPLEMENT_1期30卷

作者： Shen, Jeremy M Sung, Suk Hyun Agarwal, Nishkarsh Stangel, Alex Hovden, Robert Department of Electrical and Computer Engineering University of Michigan Ann Arbor MI USA Rowland Institute at Harvard Harvard University Cambridge MA USA Department of Material Science and Engineering University of Michigan Ann Arbor MI USA Applied Physics Program University of Michigan Ann Arbor MI USA