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VUV imaging of type-ⅠELM filamentary structures and their temporal characteristics on EAST

Plasma science and technology 2024年第11期26卷 22-31页

作者： Rongjing DENG Tingfeng MING Bang LI Qiqi SHI Shanwei HOU Shuqi YANG Xiaoju LIU Shaocheng LIU Guoqiang LI Xiang GAO Yasuhiro SUZUKI Yunfeng LIANG Institute of Plasma Physics Hefei Institutes of Physical ScienceChinese Academy of SciencesHefei 230031People’s Republic of China University of Science and Technology of China Hefei 230026People’s Republic of China Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province College of Optoelectronic EngineeringShenzhen UniversityShenzhen 518060People’s Republic of China Graduate School of Advanced Science and Engineering Hiroshima UniversityHigashi-Hiroshima 739-8527Japan Forschungszentrum Jülich GmbH Institut für Energie-und Klimaforschung-PlasmaphysikJülich D-52425Germany

In the H-mode experiments conducted on the Experimental advanced Superconducting Tokamak(EAST),fluctuations induced by the so-called edge localized modes(ELMs)are captured by a high-speed vacuum ultraviolet(VUV)imaging *** field line-aligned filamentary structures are analyzed in this *** transport induced by ELM filaments in the scrape-off layer(SOL)under different discharge conditions is analyzed by comparing the VUV signals with the divertor probe *** is found that convective transport along open field lines towards the divertor target dominates the parallel ion particle transport mechanism during *** toroidal mode number of the filamentary structure derived from the VUV images increases with the electron density pedestal *** analysis of the toroidal distribution characteristics during ELM bursts reveals toroidal *** influence of resonance magnetic perturbation(RMP)on the ELM size is also analyzed using VUV imaging *** the phase difference of the coil changes periodically,the widths of the filaments change as ***,the temporal evolution of the ELMs on the VUV signals provides rise time and decay time for each single ELM event,and the results indicate a negative correlation trend between these two times.

关键词： EAST tokamak VUV imaging filamentary structure temporal characteristics RMP

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Self-aligned top-gate amorphous ITZO TFTs with high-k AlOx insulator with Oxygen-plasma formed source/drain

Self-aligned top-gate amorphous ITZO TFTs with high-k AlOx i...

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International Conference on Display technology, 2024

作者： Jiang, Wei Wong, Man Department of Electronic and Computer Engineering Kowloon Hong Kong The State Key Laboratory on Advanced Displays and Optoelectronics Technologies The Hong Kong University of Science and Technology Kowloon Hong Kong Guangzhou HKUST Fok Ying Tung Graduate School Guangzhou511458 China

This work develops self-aligned top-gate (SA-TG) amorphous indium-tin-zinc oxide (ITZO) thin-film transistors (TFT) with high-k AlOx gate insulator based on oxygen-plasma formed source/drain technique. The fabricated SA-TG TFTs based on this technique demonstrate good electrical performance, such as source/drain resistivity of less than 0.005Ω cm, high field-effect mobility of 35.2 cm2/Vs, and near-zero turn-on voltage. Additionally, the SA-TG high-k devices exhibiting short-channel effects only when the channel length is scaled to ~0.8 μm and demonstrated strong stability when subjected to thermal and gate bias stress. © 2024 John Wiley and Sons Inc. All rights reserved.

关键词： Thin film transistors

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Principles and trends in extreme fast charging lithium-ion batteries

EES Batteries

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EES Batteries 2025年第1期1卷 9-22页

作者： Yu-Xing Yao Lei Xu Chong Yan Qiang Zhang Tsinghua Center for Green Chemical Engineering Electrification Beijing Key Laboratory of Green Chemical Reaction Engineering and Technology Department of Chemical Engineering Tsinghua University Beijing 100084 China Advanced Research Institute of Multidisciplinary Science School of Materials Science and Engineering Beijing Institute of Technology Beijing 100081 China

The booming electric vehicle (EV) industry is laying the cornerstone for decarbonized road transport, a sector responsible for one-sixth of global energy-related emissions. A critical barrier to the wider adoption of EVs is their ability to fast charge on a timescale comparable to refueling gasoline cars. In 2017, the US Department of Energy defined extreme fast charging (XFC), aiming to charge 80% battery capacity within 10 minutes or at 400 kW. The aim of this review is to discuss current trends and provide principles for fast charging battery research and development. We begin by comparing the charge time and power of the fastest-charging electric vehicle models on the recent markets to identify the technological gap. We then benchmark XFC battery performance in the literature based on three key parameters: charge rate, energy density, and cycle life under fast charging conditions, in an effort to standardize XFC battery data reporting. The crucial effects of electrode mass loading and cell format are highlighted. Next, a thorough analysis is conducted regarding limiting electrodes (cathode vs. anode) and their respective rate-limiting steps (mass transport vs. charge transfer) during XFC, which remains a long-standing controversy in the field and requires timely clarification. On this basis, a comprehensive perspective is presented on the most promising current strategies and future lines of research for enabling XFC-capable LIBs, focusing on electrode/electrolyte materials and battery state monitoring techniques. We anticipate that this review sharpens the focus of XFC research and serves as a guide for developing fast-charging energy storage systems including LIBs and beyond.

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Lipid-Based Intelligent Vehicle Capabilitized with Physical and Physiological Activation

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Research 2023年第2期2022卷 275-295页

作者： Fuxue Zhang Bozhang Xia Jiabei Sun Yufei Wang Jinjin Wang Fengfei Xu Junge Chen Mei Lu Xin Yao Peter Timashev Yuanyuan Zhang Meiwan Chen Jing Che Fangzhou Li Xing-Jie Liang CAS Key Laboratory for Biomedical Efects of Nanomaterials and Nanosafety CAS Center for Excellence in NanoscienceNational Center for Nanoscience and Technology of ChinaNo.11First North RoadZhongguancunBeijing 100190China Sino-Danish Center for Education and Research Sino-Danish Cllge of University of Chinese Academyof Sciences Beijing 100049China School of Nanoscience and Technology University of Chinese Academy of SciencesBeijing 100049China China National Institutes for Food and Drug Control Beijing 102629China Beijing Advanced Innovation Center for Biomedical Engineering School of Engineering MedicineBeihang UniversityBeijing 100083China Advanced Research Institute of Multidisciplinary Science School of Life ScienceSchool of Medical Technology(Institute of Engineering Medicine)Key Laboratory of Molecular Medicine and BiotherapyKey Laboratory of Medical Molecule Science and Pharmaceutics EngineeringBeijing Institute of TechnologyBeijing 100081China School of Chemical Sciences University of Chinese Academy of SciencesBeijing 100049China Laboratory of Clinical Smart Nanotechnologies Institute for Regenerative MedicineSechenov UniversityMoscowRussia State Key Laboratory of Quality Research in Chinese Medicine Institute of Chinese Medical SciencesUniversity of MacaoMacao SARChina

Intelligent drug delivery system based on “stimulus-response”mode emerging a promising perspective in next generation lipidbased ***,we classify signal sources into physical and physiological stimulation according t... 详细信息

关键词： classify Lipid Intelligent

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Proposal of Block Erase and Verify Schemes for Ferroelectric NAND: Overcoming Critical Challenges from Threshold Voltage Polarity

Proposal of Block Erase and Verify Schemes for Ferroelectric...

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IEEE International Memory Workshop (IMW)

作者： Song-Hyeon Kuk Bong Ho Kim Youngkeun Park Hyeon-Seong Hwang Jae-Hoon Han Byung Jin Cho Byung Chul Jang Sang-Hyeon Kim School of Electrical Engineering Korea Advanced Institute of Science and Technology Daejeon Republic of Korea Graduate School of Semiconductor Technology Korea Advanced Institute of Science and Technology Daejeon Republic of Korea Korea Institute of Science and Technology Seoul Republic of Korea School of Electronic and Electrical Engineering Kyungpook National University Daegu Republic of Korea

ISBN: (数字)9798350362985

ISBN: (纸本)9798350362992

As 3D NAND flash memory faces challenges, ferroelectric (FE) NAND has gained interest for its fabrication process compatibility and analogous operation mechanisms to charge-trap-flash (CTF) NAND. While recent advancements have demonstrated ferroelectric field-effect-transistor (FEFET) cells with large MWs and feasible reliability from the industry and academia, we point out that FE NAND faces critical challenges at the array level. Specifically, erase verify at the block level is challenging in FE NAND due to the opposite threshold voltage (V th ) polarity compared to in CTF NAND. This crucially hinders the feasibility of FE NAND for future 3D NAND technology. To overcome this, we propose viable write and erase verify schemes for the first time. The feasibility of the proposed schemes is demonstrated using fabricated cells with superior cell performances.

关键词： Fabrication Three-dimensional displays Costs Logic gates Iron Silicon Threshold voltage High frequency FeFETs Faces

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Fluid Actuators Using Surface Acoustic Waves and Their Applications

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Journal of Japan Institute of Electronics Packaging 2024年第4期27卷 325-333页

作者： Tsunemasa, Saiki Yuichi, Utsumi Project Management Department Hyogo Prefectural Institute of Technology 3-1-12 Yukihira-cho Suma-ku Hyogo Kobe654-0037 Japan Graduate School of Engineering University of Hyogo 2167 Shosha Hyogo Himeji671-2280 Japan Laboratory of Advanced Science and Technology for Industry University of Hyogo 3-1-2 Koto Kamigori-cho Hyogo Ako-gun678-1205 Japan

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Identifying Highly Deformable van der Waals Layered Chalcogenides with Superior Thermoelectric Performance Using Deformability Factors and Interpretable Machine Learning

arXiv

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arXiv 2024年

作者： Ren, Qi Lun, Yingzhuo Zhu, Bonan Tang, Gang Hong, Jiawang School of Aerospace Engineering Beijing Institute of Technology Beijing100081 China Advanced Research Institute of Multidisciplinary Science Beijing Institute of Technology Beijing100081 China

Van der Waals layered chalcogenide-based flexible thermoelectric devices show great potential for applications in wearable electronics. However, materials that are both highly deformable and exhibit superior thermoelectric performance are extremely limited. There is an urgent need for methods that can efficiently predict both deformability and thermoelectric performance to enable high-throughput screening of these materials. In this study, over 1000 van der Waals layered chalcogenides were high-throughput screened from material databases, the deformability of which were predicted with our previously developed deformability factor. An accurate and efficient model based on machine learning methods were developed to predict the thermoelectric properties. Several candidate materials with both deformability and thermoelectric potential were successfully discovered. Among them, NbSe2Br2 was verified by first principles calculations, achieving ZTmax value of 1.35 at 1000K, which is currently the highest value among flexible inorganic thermoelectric materials. And the power factor value of 8.1 μWcm-1K-2 at 300K also surpassed most organic and inorganic flexible thermoelectric materials. Its high deformability mainly attributed to the small slipping energy that allows interlayer slip and the small in-plane modulus that allows deformation before failure. The high ZTmax is mainly contributed by the extremely low thermal conductivity and the high Seebeck coefficient along the out-of-plane direction at high temperature. The high power factor at room temperature is mainly comes from the high conductivity in the in-plane direction. This study is expected to accelerate the development and application of flexible thermoelectric devices based on inorganic semiconductor materials. Copyright © 2024, The Authors. All rights reserved.

关键词： Van der Waals forces

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Photovoltaics of low-bandgap inorganic perovskites

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Green Carbon 2024年第3期2卷 263-273页

作者： Mingyu Hu Changyu Yang Yalan Zhang Shihe Yang Yuanyuan Zhou Department of Physics Hong Kong Baptist UniversityKowloonHong Kong SAR 999077China Department of Chemical and Biological Engineering The Hong Kong University of Science and TechnologyClear Water BayHong Kong SAR 999077China School of Advanced Materials Shenzhen Graduate SchoolPeking UniversityShenzhen 518055China

Low-bandgap inorganic perovskites are a group of materials that can simultaneously harness the stability merit of an all-inorganic composition and high photovoltaic efficiency potential of low-bandgap light absorbers as compared with other perovskite ***,low-bandgap inorganic perovskites are promising materials options for the development of both single-junction and tandem solar *** this review,we summarize the recent studies addressing the major issues related to these perovskites,including the low phase stability and uncontrolled Sn-related *** also present a perspective discussion on future research directions related to these *** propose to gain insights into those unique thermodynamic and kinetic behaviors of these perovskites to understand and overcome their low phase *** particular,we envision that fundamental investigations leveraging 119Sn NMR may open a new pathway for understanding and alleviating Sn-related *** efforts in the discussed areas are expected to unleash the full technological potential of low-bandgap inorganic perovskites for high-performance solar cells and modules.

关键词： Perovskite solar cells Low-bandgap perovskites Inorganic perovskites

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Is Yang-Mills theory unitary in fractional spacetime dimensions?

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science China(Physics,Mechanics & Astronomy) 2024年第7期67卷 59-64页

作者： Qingjun Jin Ke Ren Gang Yang Rui Yu Graduate School of China Academy of Engineering Physics Beijing 100193China School of Physics and Astronomy Sun Yat-Sen UniversityZhuhai 519082China CAS Key Laboratory of Theoretical Physics Institute of Theoretical PhysicsChinese Academy of SciencesBeijing 100190China School of Fundamental Physics and Mathematical Sciences Hangzhou Institute for Advanced StudyUniversity of Chinese Academy of SciencesHangzhou 310024China International Centre for Theoretical Physics Asia-Pacific Hangzhou 310024China School of Physical Science and Technology Inner Mongolia UniversityHohhot 010021China Beijing Computational Science Research Center Beijing 100193China

We present concrete evidence that Yang-Mills theory exhibits non-unitarity in non-integer spacetime *** violation of unitarity stems from evanescent operators that,while vanishing in four dimensions,are non-zero in general d *** demonstrate that these evanescent operators lead to the emergence of both negative-norm states and complex anomalous dimensions.

关键词： gauge field theories field theories in dimensions other than four renormalization

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A DfT Technique for Electrical Interconnect Testing of Circuit Boards with 3D Stacked SRAM ICs 12

A DfT Technique for Electrical Interconnect Testing of Circu...

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12th IEEE CPMT Symposium Japan, ICSJ 2023

作者： Ikiri, Yuki Yotsuyanagi, Hiroyuki Ali, Fara Ashikin Binti Lu, Shyue-Kung Hashizume, Masaki Graduate School of Advanced Technology and Science Tokushima University Tokushima Japan Graduate School of Technology Industrial and Social Sciences Tokushima University Tokushima Japan Universiti Teknikal Malaysia Melaka Faculty of Electrical and Electronic Engineering Technology Melaka Malaysia National Taiwan Univ. of Science and Technology Department of Electrical Engineering Taiwan Taipei Taiwan The Open University of Japan Tokushima Study Center Tokushima Japan

ISBN: (纸本)9798350325157

A Design-for-test (DfT) technique is proposed in this paper for a test method, by which detecting open defects occurring interconnects between 3D stacked SRAM IC and a printed circuit board and among dies inside them. The test method is based on the supply current that is made flow through an interconnect to be tested. The DfT technique utilizes a built-in current sensor circuit to detect the open defects. It is shown that open defects occurring at interconnects among dies designed by the DfT method in a 3D stacked SRAM IC, and between the IC and a circuit board can be detected by the supply current test method. © 2023 IEEE.

关键词： Static random access storage

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