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IEEE Electron Device Letters 2025年

作者： Deng, Ziye Li, Qi Liang, Lanyi Li, Pei Liu, Yulong Guan, Li Hu, Xiaosong Guilin University of Electronic Technology Guangxi Key Laboratory of Precision Navigation Technology and Application Guilin541004 China

This letter proposes a novel lateral double-diffused MOSFET based on a silicon-on-insulator (SOI) structure with a drift-all-around electron accumulation layer (EAL) (DAA-LDMOS). The DAA structure incorporates a self-adaptive potential region (SAP) surrounding a fin-shaped drift region, and a control electrode atop the SAP region. The potential existing in the SAP region and buried oxide (BOX) layer is perpetually higher than in the drift region, maintaining an unwavering potential differential, which introduces a 3D fully enclosed rectangular EAL in the drift region. Moreover, a control electrode can deftly modulate the intensity of the EAL to achieve the optimal accumulation effect. Consequently, the device possesses an extremely wide current path with ultralow resistance, dramatically decreasing the specific ON-resistance RON,sp. The simulation results show that the RON,sp of the DAA-LDMOS was reduced from 12.56 mΩ·cm2 of the conventional LDMOS (Cov. LDMOS) without accumulation effect to 0.28 mΩ·cm2, a reduction of 97.7% at the same breakdown voltage BV of 260 V. The figure-of-merit (FOM) of the DAA-LDMOS increased from 5.5 MW/cm2 of the Cov. LDMOS to a record high of 237.7 MW/cm2, demonstrating an exceptional performance. © 1980-2012 IEEE.

关键词： Silicon on insulator technology

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Multi-view fully connected graph to fuse multi-sensor signals for mechanical equipment remaining useful life prediction

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Journal of Manufacturing Systems 2025年 80卷 1029-1052页

作者： Jinxin Wu Deqiang He Zhenzhen Jin Ming Zhao Xianwang Li Yanjun Chen Guangxi Key Laboratory of Manufacturing System & Advanced Manufacturing Technology School of Mechanical Engineering Guangxi University Nanning 530004 China State Key Laboratory of Heavy-duty and Express High-power Electric Locomotive Zhuzhou 412001 China Guangxi Key Laboratory of Precision Navigation Technology and Application Guilin University of Electronic Technology 541004 China Guangxi Liugong Machinery Co. Ltd Liuzhou 545007 China

Accurate remaining useful life prediction is essential for enhancing equipment reliability and optimizing maintenance strategies. However, existing methods struggle to effectively integrate multi-sensor data while quantifying uncertainty. To address these challenges, a multi-view fully connected graph neural network is proposed for multi-sensor mechanical equipment remaining useful life prediction. Firstly, local fully connected graphs and global graphs are constructed to comprehensively characterize the multi-view spatial correlations from global and local views. Meanwhile, the graph convolution operations are performed on local and global graphs to extract the intricate spatial dependencies within multi-sensor signals. Then, the learned multi-view spatial representations are fed into the temporal convolutional network to capture the temporal dependencies across sensor timestamps. Finally, a joint optimization network is developed to simultaneously predict the remaining useful life and its associated prediction interval, enabling uncertainty quantification. Extensive experiments on two multi-sensor monitoring degradation datasets demonstrate the superior performance of the proposed model, offering valuable technical support for predictive maintenance.

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High-Performance Thin Film Lithium Niobate Electro-optic Modulator By Embedding Structure

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IEEE Photonics technology Letters 2025年

作者： Song, Shuxiang Li, Haisheng Yang, Jiayu Yin, Yihui Yang, Wanli Li, Yue Li, Hangyu Cen, Mingcan Guangxi Normal University Guangxi Key Laboratory of Brain-inspired Computing and Intelligent Chips School of Electronic and Information Engineering Guilin China Guilin China Guangxi Key Laboratory of Precision Navigation Technology and Application Guilin University of Electronic Technology 541004 China 34th Research Institute of China Electronics Technology Group Corporation Guilin541004 China

Electro-optic modulators with low driving voltage and wide bandwidth are critical for advanced analog and digital communication systems. Improving the modulation efficiency of thin-film lithium niobate (TFLN) modulators is essential to reducing drive voltage and device length, thereby enabling compact chip integration and enhanced modulation bandwidth. This work introduces a novel TFLN modulator featuring an embedded dual capacitance-loaded traveling-wave electrode (EDC-TWE) to achieve superior electro-optic modulation efficiency and minimized optical loss. The fabricated modulator, with a 10-mm-long modulation region, achieves a half-wave voltage of 1.45 V and an electro-optic modulation bandwidth exceeding 40 GHz, demonstrating its potential for high-performance optical communication applications. © 1989-2012 IEEE.

关键词： Digital communication systems

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Velocity Deambiguation Method for DDMA-MIMO Radar Based on Phase Compensation

Velocity Deambiguation Method for DDMA-MIMO Radar Based on P...

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IEEE Information technology and Mechatronics Engineering Conference (ITOEC)

作者： Hu Haoming Sun Xiyan Li Jingjing Guangxi Key Laboratory of Precision Navigation Technology and Application University of Electronic Technology Guilin China Information and Communicaiton Schnool Guilin University of Electronic Technology Guilin China National & Local Joint Engineering Research Center of Satellite Navigation Positioning and Location Service Guilin China

ISBN: (数字)9798331529482

ISBN: (纸本)9798331529499

In order to address the issues of velocity ambiguity and target energy dispersion in DDMA-MIMO radar, an enhanced velocity defuzzification methodology is presented. Firstly, the repeated distribution of the target's spectrum is exploited to compress the range Doppler spectrum in the Doppler dimension. This results in the conversion n of the two-dimensional detection to the detection of a single distance-dimensional vector. Furthermore, the subarea peak search is employed to replace the Doppler-dimensional CFAR detection within the Doppler dimension, thereby significantly enhancing the detection efficiency. In addition, a DDMA waveform free of empty bands is designed to estimate the target angle while achieving velocity deblurring through phase compensation and digital beam forming algorithms. The efficacy and superiority of the proposed method are demonstrated through a verification process using measured data.

关键词： Radar measurements Radar detection Estimation Transforms Radar antennas Vectors Transceivers Linear antenna arrays Doppler effect Velocity measurement

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Stacked lateral double-diffused metal–oxide–semiconductor field effect transistor with enhanced depletion effect by surface substrate

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Chinese Physics B 2019年第3期28卷 328-332页

作者： Qi Li Zhao-Yang Zhang Hai-Ou Li Tang-You Sun Yong-He Chen Yuan Zuo Guangxi Key Laboratory of Precision Navigation Technology and Application Guilin University of Electronic Technology

A stacked lateral double-diffused metal–oxide–semiconductor field-effect transistor(LDMOS) with enhanced depletion effect by surface substrate is proposed(ST-LDMOS), which is compatible with the traditional CMOS processes. The new stacked structure is characterized by double substrates and surface dielectric trenches(SDT). The drift region is separated by the P-buried layer to form two vertically parallel devices. The doping concentration of the drift region is increased benefiting from the enhanced auxiliary depletion effect of the double substrates, leading to a lower specific on-resistance(Ron,sp). Multiple electric field peaks appear at the corners of the SDT, which improves the lateral electric field distribution and the breakdown voltage(BV). Compared to a conventional LDMOS(C-LDMOS), the BV in the ST-LDMOS increases from 259 V to 459 V, an improvement of 77.22%. The Ron,sp decreases from 39.62 m?·cm^2 to 23.24 m?·cm^2 and the Baliga's figure of merit(FOM) of is 9.07 MW/cm^2.

关键词： double substrates surface dielectric trench stacked lateral double-diffused metal–oxide– semiconductor field-effect transistor(ST-LDMOS) breakdown voltage

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An OTA-C filter for ECG acquisition systems with highly linear range and less passband attenuation

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Journal of Semiconductors 2015年第5期36卷 120-125页

作者：段吉海蓝创徐卫林韦保林 Guangxi Key Laboratory of Precision Navigation Technology and Application Guilin University of Electronic Technology

A fifth order operational transconductance amplifier-C （OTA-C） Butterworth type low-pass filter with highly linear range and less passband attenuation is presented for wearable bio-telemetry monitoring applications in a UWB wireless body area network. The source degeneration structure applied in typical small transconduc- tance circuit is improved to provide a highly linear range for the OTA-C filter. Moreover, to reduce the passband attenuation of the filter, a cascode structure is employed as the output stage of the OTA. The OTA-based circuit is operated in weak inversion due to strict power limitation in the biomedical chip. The filter is fabricated in a SMIC 0.18-μm CMOS process. The measured results for the filter have shown a passband gain of -6.2 dB, while the -3-dB frequency is around 276 Hz. For the 0.8 Vpp sinusoidal input at 100 Hz, a total harmonic distortion （THD） of-56.8 dB is obtained. An electrocardiogram signal with noise interference is fed into this chip to validate the function of the designed filter.

关键词： ECG signal fully differential OTA-C filter highly linear range less passband attenuation

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An extremely low power voltage reference with high PSRR for power-aware ASICs

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Journal of Semiconductors 2015年第9期36卷 131-135页

作者：段吉海邓东宇徐卫林韦保林 Guangxi Key Laboratory of Precision Navigation Technology and Application Guilin University of Electronic Technology

An extremely low power voltage reference without resistors is presented for power-aware ASICs. In order to reduce the power dissipation, an Oguey current reference source is used to reduce the static current; a cascode current mirror is used to increase the power supply rejection ratio （PSRR） and reduce the line sensitivity of the circuit. The voltage reference is fabricated in SMIC 0.18μm CMOS process. The measured results for the voltage reference demonstrate that the temperature coefficient of the voltage is 66 ppm/℃ in a range from 25 to 100 ℃. The line sensitivity is 0.9% in a supply voltage range of 1.8 to 3,3 V, and PSRR is -49 dB at 100 Hz. The power dissipation is 200 nW. The chip area is 0.01 mm2. The circuit can be used as an elementary circuit block for power-aware ASICs.

关键词： ASICs extremely low power dissipation high power supply rejection ratio voltage reference source

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Impact of Al_(x)Ga_(1-x)N barrier thickness and Al composition on electrical properties of ferroelectric HfZrO/Al_(2)O_(3)/AlGaN/GaN MFSHEMTs

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Chinese Physics B 2022年第9期31卷 502-510页

作者： Yue Li Xingpeng Liu Tangyou Sun Fabi Zhang Tao Fu Peihua Wang-yang Haiou Li Yonghe Chen Guangxi Key Laboratory of Precision Navigation Technology and Application Guilin University of Electronic Technology(GUET)Guilin 541004China

Ferroelectric(FE)HfZrO/Al_(2)O_(3) gate stack AlGaN/GaN metal-FE-semiconductor heterostructure high-electron mo-bility transistors(MFSHEMTs)with varying Al_(x)Ga_(1-x)N barrier thickness and Al composition are investigated and com-pared by TCAD simulation with non-FE HfO_(2)/Al_(2)O_(3) gate stack metal-insulator-semiconductor heterostructure high-electron mobility transistors(MISHEMTs).Results show that the decrease of the two-dimensional electron gas(2DEG)density with decreasing AlGaN barrier thickness is more effectively suppressed in MFSHEMTs than that in MISHEMTs due to the enhanced FE polarization switching *** electrical characteristics of MFSHEMTs,including transcon-ductance,subthreshold swing,and on-state current,effectively improve with decreasing AlGaN thickness in *** Al composition in AlGaN barrier layers that are under 3-nm thickness plays a great role in enhancing the 2DEG den-sity and FE polarization in MFSHEMTs,improving the transconductance and the on-state *** subthreshold swing and threshold voltage can be reduced by decreasing the AlGaN thickness and Al composition in MFSHEMTs,affording favorable conditions for further enhancing the device.

关键词： ferroelectric polarization HfZrO ferroelectric gate HEMTs

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An 8 bit 1 MS/s SAR ADC with 7.72-ENOB

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Journal of Semiconductors 2017年第8期38卷 75-80页

作者： Jihai Duan Zhiyong Zhu Jinli Deng Weilin Xu Guangxi Key Laboratory of Precision Navigation Technology and Application Guilin University of Electronic Technology

This paper presents a low power 8-bit 1 MS/s SAR ADC with 7.72-bit ENOB. Without an op-amp, an improved segmented capacitor DAC is proposed to reduce the capacitance and the chip area. A dynamic latch comparator with output offset voltage storage technology is used to improve the precision. Adding an extra positive feedback in the latch is to increase the speed. What is more, two pairs of CMOS switches are utilized to eliminate the kickback noise introduced by the latch. The proposed SAR ADC was fabricated in SMIC 0.18μm CMOS technology. The measured results show that this design achieves an SFDR of 61.8 dB and an ENOB of 7.72 bits, and it consumes 67.5μW with the FOM of 312 fJ/conversion-step at 1 MS/s sample under 1.8 V power supply.

关键词： SAR ADC dynamic latch comparator output offset voltage storage technology kickback noise

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Low-noise sub-harmonic injection locked multiloop ring oscillator

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Journal of Semiconductors 2016年第9期37卷 100-104页

作者：徐卫林吴迪韦雪明韦保林段吉海归发弟 Guangxi Key Laboratory of Precision Navigation Technology and Application Guilin University of Electronic Technology

A three-stage differential voltage-controlled ring oscillator is presented for wide-tuning and low-phase noise requirement of clock and data recovery circuit in ultra wideband（UWB） wireless body area network. To improve the performance of phase noise of delay cell with coarse and fine frequency tuning, injection locked technology together with pseudo differential architecture are adopted. In addition, a multiloop is employed for frequency boosting. Two RVCOs, the standard RVCO without the IL block and the proposed IL RVCO, were fabricated in SMIC 0.18 m 1P6 M Salicide CMOS process. The proposed IL RVCO exhibits a measured phase noise of –112.37 d Bc/Hz at 1 MHz offset from the center frequency of 1 GHz, while dissipating a current of 8 m A excluding the buffer from a 1.8-V supply voltage. It shows a 16.07 d B phase noise improvement at 1 MHz offset compared to the standard topology.

关键词： ring VCO injection-locked multiloop frequency tuning

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