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2023 Cross Strait Radio Science and Wireless technology Conference, CSRSWTC 2023

作者： Jiang, Yue Chen, Junli Song, Wenke Sun, Tangyou Guilin University of Electronic Technology Guangxi Key Laboratory of Precision Navigation Technology and Application Guilin541004 China

ISBN: (纸本)9798350358971

Si is a highly promising material for the development of new photodetectors due to its abundant reserves. However, the relatively large bandgap of silicon (1.12eV) restricts the application of traditional silicon-based photodetectors in the near-infrared range (1100nm-2000nm). The investigated periodic Au/Si nanopillar hot electron photodetector structure enables silicon-based photodetectors to operate in the near-infrared range. It utilizes self-assembled polystyrene spheres as a mask for the fabrication of nanopillar structure, providing a low-cost alternative for nanostructure preparation. Therefore, the Au/Si nanopillar grating structure can be used to create novel photodetectors. Under a bias voltage of 5V and illumination from a 470nm light source, the photocurrent-to-dark current ratio of the material increased by 192% due to intrinsic light absorption. At the resonance wavelength of 720nm, the contribution of hot electron transfer enhanced the responsivity. The time response characterized by the switch ratio is approximately 5. The dark-state I-V curve fitting yields a Schottky barrier height of approximately 0.7eV, and the structure exhibits high absorption in the near-infrared wavelength range. This method optimizes the performance of photonic devices and expands their potential applications. © 2023 IEEE.

关键词： Au/Si hot electron nanopillar near-infrared photodetector

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A Method Based on Quinn Algorithm to Improve the Accuracy of PMF-FFT Doppler Frequency Estimation 4

A Method Based on Quinn Algorithm to Improve the Accuracy of...

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4th IEEE Advanced Information Management, Communicates, Electronic and Automation Control Conference, IMCEC 2021

作者： Xi-Yan, Sun Xun-Xiong, Hu Yuan-Fa, Ji Ning, Guo Guilin University of Electronic Technology Guangxi Key Laboratory of Precision Navigation Technology and Application Guilin541004 China

ISBN: (纸本)9781728185347

In the satellite positioning receiver, it is essential to capture the satellite signal and obtain the carrier and Doppler frequency. Whereas, there is a vital problem that the Doppler frequency offset of 100 kilohertz with the change rate of thousands of kilohertz per second under the high dynamic environment which has higher requirements on capture algorithm. Aiming at the Doppler frequency search efficiency of traditional PMF-FFT algorithm, this paper proposes a Quinn-PMF-FFT. Before estimating the Doppler frequency, there is double zero padding, the point of signal does 2N to fill after zero Fourier transform arithmetic, and makes the increase in the number of spectral signal spectrum in the main lobe, then gets more spectral information to modified of the peak position. It is also can obtain more accurate Doppler frequency estimation, and carry out the simulation experiment. Via comparing the mean square frequency error, it is verified that the Quinn-PMF-FFT algorithm can avoid the error of interpolation direction in high dynamic environment, and has higher search efficiency and estimation accuracy. © 2021 IEEE.

关键词： Fast Fourier transforms

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Low-Cost Fabrication and Electrical Properties of IZO Thin Film Transistors

Low-Cost Fabrication and Electrical Properties of IZO Thin F...

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2023 Cross Strait Radio Science and Wireless technology Conference, CSRSWTC 2023

作者： Shen, Zhenyu Huang, Siyuan Huang, Xiaolin Zhang, Niuniu Chen, Lei Wangyang, Peihua Guilin University of Electronic Technology Guangxi Key Laboratory of Precision Navigation Technology and Application Guilin541004 China

ISBN: (纸本)9798350358971

Metal oxide films have great potential to meet the requirements of high carrier mobility, high electrical conductivity, mechanical flexibility, and optical transparency. However, the deposition of metal oxide films takes a long time and the equipment is more complex. Moreover, the annealing temperature is too high and is incompatible with the flexible substrate. In this paper, combustion processing for preparing InZnO(IZO) thin films with low annealing temperature is reported, and a thin film transistor based on Si substrate with Sb2O3 as gate medium and IZO as the channel is successfully prepared. It shows the huge potential application of IZO in TFT. © 2023 IEEE.

关键词： combustion processing IZO Sb203 thin film transistor (TFT)

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An active tunable Fano switch in a plasmaﬁlled superlattice array

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Plasma Science and technology 2021年第7期23卷 127-133页

作者： Tao FU Tianbo YANG Yinbing AN Qi LI Zilan DENG Guangxi Key Laboratory of Precision Navigation Technology and Application Guilin University of Electronic TechnologyGuilin 541004People’s Republic of China Guangdong Provincial Key Laboratory of Optical Fiber Sensing and Communications Institute of Photonics TechnologyJinan UniversityGuangzhou 510632People’s Republic of China

We propose a Fano switch arising from the superlattice array of a plasma-ﬁlled quartz tube,which can be tuned and reconﬁgured by the plasma density in the *** generation of the switch depends on a Fano band that is induced by the interference between the Mie resonance in an isolated cylinder and Bragg scattering in a periodic *** underlying dispersion characteristics reveal that a localized tunableﬂat band corresponding to the Mie resonance plays an important role in the appearance of the Fano *** active tunable switch can be potentially applied to microwave communications as a single-pole multi-throw switch and to monitor environmental variables that impact the plasma density.

关键词： gaseous plasma Fano resonance reconﬁgurable tunable switch

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Simulation of E-Mode p-Channel GaN/AlGaN HFETs with Hybrid AlGaN Barrier Layer

Simulation of E-Mode p-Channel GaN/AlGaN HFETs with Hybrid A...

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2023 Cross Strait Radio Science and Wireless technology Conference, CSRSWTC 2023

作者： Chen, Feng Qin, Guanming Li, Ling Zhai, Jianghui Chen, Yonghe Guilin University of Electronic Technology Guangxi Key Laboratory of Precision Navigation Technology and Application Guilin541004 China

ISBN: (纸本)9798350358971

In this paper, a p-channel enhancement-mode p-InGaN/GaN/AlGaN heterojunction field-effect transistor (HFET) with a hybrid AlGaN barrier layer (HBL) is proposed. It is found that the introduction of the HBL and p-InGaN/GaN/AlGaN heterojunction can effectively deplete the two-dimensional hole gas (2DHG) in the gate region and reduce the on-resistance (RON). The TCAD simulation results show that the lower Al molar fraction and the thicker thickness of embedded barrier obtain the more negative threshold voltage (VTH), without sacrificing the on-state current (|ION|). In addition, by using p-InGaN/GaN/AlGaN heterojunction to increase the hole concentration in GaN channel, the |ION| of the HBL HFETs has been increased from 4.3 mA/mm to 9 mA/mm at VDS=-5V, with a high |VTH| of |-2| V. © 2023 IEEE.

关键词： 2DHG embedded barrier enhancement-mode p-channel GaN HFETs

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Behavioral modeling to circuit design steps of an injection locked CDR in 0.18μm-CMOS 10

Behavioral modeling to circuit design steps of an injection ...

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10th IEEE International Conference on Anti-Counterfeiting, Security, and Identification, ASID 2016

作者： Xu, Weilin Wu, Di Zhu, Chaoyong Duan, Jihai Wei, Baolin Wei, Xueming Fabi, Zhang Guangxi Key Laboratory of Precision Navigation Technology and Application Guilin University of Electronic Technology Guilin541004 China

ISBN: (纸本)9781509010271

In this paper the design, simulation and measurement procedure of injection locked clock and data recovery(CDR) circuit is discussed. The non-idealities of the CDR circuit such as power supply noise and lock detection are modeled behaviorally using Verilog-A. The required CDR specifications can be extracted in a very short period of simulation time with the designed behavioral model. The designed CDR features with full speed, dual loop, coarse and fine tuning and injection locked technology. The proposed CDR is fabricated with SMIC 0.18um 1P6M process and consumes 36mW from a single 1.8 V supply. Measured results show that the 250Mbps input NRZ signal could be correctly recovered with 2ps root-mean-square jitter. © 2016 IEEE.

关键词： Locks (fasteners)

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A Novel Inverse-L Buried GaN Current-Aperture Vertical Electron Transistors

A Novel Inverse-L Buried GaN Current-Aperture Vertical Elect...

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2023 Cross Strait Radio Science and Wireless technology Conference, CSRSWTC 2023

作者： Liao, Yuanmei Li, Haiou Qu, Kangchun Liu, Xingpeng Guilin University of Electronic Technology Guangxi Key Laboratory of Precision Navigation Technology and Application Guilin541004 China

ISBN: (纸本)9798350358971

In order to overcome the problem of current collapse in transverse GaN devices and produce higher breakdown voltage power devices, research on vertical GaN-based power devices is crucial. This paper suggests an AlGaN/GaN current-aperture vertical electronic transistor (CAVET) with an inverted L-shaped buried layer structure. Through simulation and in-depth study of the proposed device, by changing the buried length and droping concentration and the buffer droping concentration, the results show that the inverted L-shaped buried CAVET enhances breakdown voltage to 2536 V. And the device achieving the figure of merit of 3.3GW/cm2, which are 148% higher than traditional structure device, but the on-resistance is only 1. 95 m Ω · cm2. © 2023 IEEE.

关键词： buried layer structur GaN pressure resistance characteristic transistor

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ZnO/TiO2Nanorods Heterojunction Ultraviolet Photodetector

ZnO/TiO2Nanorods Heterojunction Ultraviolet Photodetector

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2023 Cross Strait Radio Science and Wireless technology Conference, CSRSWTC 2023

作者： Qin, Zubin Yu, Yanli Chen, Junli Zhong, Lixin Sun, Tangyou Guilin University of Electronic Technology Guangxi Key Laboratory of Precision Navigation Technology and Application Guilin541004 China

ISBN: (纸本)9798350358971

TiO2 nanorods (NRs) were synthesized on fluorine-doped tin oxide (FTO) glass substrates by typical hydrothermal method, and then ZnO film deposited to form ZnO/TiO2 NRs heterojunction ultraviolet (UV) photodetector (PD). The ZnO/TiO2 NRs heterojunction UV PD exhibits a very low dark current, showing more than 3 orders of magnitude photo-to-dark current ratio. Also, the heterojunction UV PD shows a higher responsivity of 0.18A/mW and a larger detectivity of 2.79×1013 Jones at -3V. Furthermore, the heterojunction UV PD shows good stability and repeatability of the photoelectric response. © 2023 IEEE.

关键词： heterojunction TiO2 nanorods ultraviolet photodetector ZnO film

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The charge islands SOI LDMOS with back-side etching technology

The charge islands SOI LDMOS with back-side etching technolo...

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International Conference on Mechanical, Electric and Industrial Engineering, MEIE 2018

作者： Li, Qi Zhang, Zhaoyang Sun, Tangyou Li, Haiou Chen, Yonghe Zuo, Yuan Guangxi Key Laboratory of Precision Navigation Technology and Application Guilin University of Electronic Technology Guilin541004 China

The charge islands SOI LDMOS with Back-side Etching technology structure is proposed. The new structure features the equally spaced charge islands of the upper LDMOS and a back-side etched structure of the lower LDMOS. A series of equidistant high concentration N+ regions are formed at the upper SOI LDMOS by the ion implanting method. The breakdown voltage of the device is improved due to dielectric field enhancement and the interaction of charges. The results show that the breakdown voltage is increased from 210V to 615V (192.8% enhanced), compared to the conventional LDMOS. The on-resistance of the as-studied stacked SOI LDMOS reduces from 48.2 Ω⋅mm2 to 37.23 Ω⋅mm2 comparing with conventional charge islands device, leading to a reduction ratio of 22.7%. © Published under licence by IOP Publishing Ltd.

关键词： Etching

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Fabrication and Characterization of High Indium In0.7Ga0.3As Channel MHEMT on GaAs Substrate

Fabrication and Characterization of High Indium In0.7Ga0.3As...

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2023 Cross Strait Radio Science and Wireless technology Conference, CSRSWTC 2023

作者： Qu, Benzheng Li, Haiou Kang, Dongxu Liu, Xingpeng Guilin University of Electronic Technology Guangxi Key Laboratory of Precision Navigation Technology and Application Guilin541004 China

ISBN: (纸本)9798350358971

In this work, we have successfully developed high indium content In0.7Ga0.3As channel metamorphic high electron mobility transistors (mHEMTs) on a GaAs substrate. Through experimental investigations, we have employed high indium content as channel materials to optimize device performance, including DC and microwave characteristics. The fabricated mHEMT with a gate length of 0.9 μ m and a gate width of 50 μm exhibits excellent DC and logic characteristics such as VT=-2.33V,gm= 376 mS/mm, the maximum IDS was measured to be 512 mA/mm at VGS=0.2V and VDS=2.5V. Furthermore, the device exhibits exceptional high-frequency capabilities, such as fT/fmax=20.5/49.9 GHz at VDS=2.0V. © 2023 IEEE.

关键词： GaAs substrate high indium content channels mHEMTs

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