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2023 Cross Strait Radio Science and Wireless technology Conference, CSRSWTC 2023

作者： Feng, Siyu Li, Haiou Zhu, Mengjie Luo, Xianjing Liu, Xingpeng Guilin University of Electronic Technology Guangxi Key Laboratory of Precision Navigation Technology and Application Guilin541004 China

ISBN: (纸本)9798350358971

In order to investigate the analog-to-digital converter (ADC) suitable for high-quality audio chips, a Sigma Delta modulator implemented using switched-capacitor technology and its digital decimation filter were designed. In this paper, a second-order 16-bit high-precision Sigma Delta modulator circuit is completed based on SMIC 0.18μm process. The digital filter structure is consist of a cascaded configuration of a Cascaded Integrator-Comb (CIC) filter, a compensation filter, and a half-band filter. The downsampling filter was simulated and verified using MATLAB and Modelsim platforms. Compared to traditional filter structures, this approach has the advantages of reduced hardware consumption and low power consumption. Overall mixed-level simulation of the Sigma Delta modulator circuit and decimation filter was conducted, yielding a signal-to-noise and distortion ratio (SNDR) of 100.9dB and an effective number of bits (ENOB) of 16 bits. © 2023 IEEE.

关键词： CIC filter SDM switched-capacitor technology

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Local Surface Plasmon Enhancement of (GaIn)2O3Based Ultraviolet Photodetector

Local Surface Plasmon Enhancement of (GaIn)2O3Based Ultravio...

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2023 Cross Strait Radio Science and Wireless technology Conference, CSRSWTC 2023

作者： Zhang, Fabi Weng, Chenghao Li, Haiou Liu, Xinpeng Sun, Tangyou Guilin University of Electronic Technology Guangxi Key Laboratory of Precision Navigation Technology and Application Guilin541004 China

ISBN: (纸本)9798350358971

This article proposes an effective method to enhance the performance of (GaIn)2O3 thin film photodetectors through localized surface plasmon resonance technology. To realize that, a thin layer of Ag metal is deposited on top of the (GaIn)2O3 thin film and a rapid annealing process is followed to form dispersed metal particles. It has been verified that this method can enhance the absorption of ultraviolet light of the thin film. The dark current decreases the and the light response and detection rate has been enhanced. Under the conditions of a 254 nm wavelength ultraviolet lamp and a bias voltage of 12 V, the light response of the device is 22.2 mA/W, and the detection rate of the device reaches 3.58×1012 cm· Hz1/2 ·W-1. © 2023 IEEE.

关键词： (GaIn)2O3 Ag-Nps LSPR Photodetector

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Superior multiphase interfaces in AgCuTe-based composite with significantly enhanced thermoelectric properties

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Journal of Advanced Ceramics 2023年第8期12卷 1511-1520页

作者： Wenpei Li Zhonghai Yu Chengyan Liu Ying Peng Baoquan Feng Jie Gao Guojing Wu Xiaobo Bai Junliang Chen Xiaoyang Wang Lei Miao Guangxi Key Laboratory of Information Materials Electronical Information Materials and Devices Engineering Research Center of Ministry of EducationSchool of Materials Science and EngineeringGuilin University of Electronic TechnologyGuilin 541004China Guangxi Key Laboratory of Precision Navigation Technology and Application School of Information and CommunicationGuilin University of Electronic TechnologyGuilin 541004China

It is common sense that a phase interface(or grain boundary)could be used to scatter phonons in thermoelectric(TE)materials,resulting in low thermal conductivity(k).However,a large number of impurity phases are always so harmful to the transport of carriers that poor TE performance is ***,we demonstrate that numerous superior multiphase(AgCuTe,Ag_(−2)Te,copper telluride(Cu_(2)Te and Cu_(2−x)Te),and nickel telluride(NiTe))interfaces with simultaneous strong phonon scattering and weak electron scattering could be realized in AgCuTe-based TE *** to the similar chemical bonds in these phases,the depletion region at phase interfaces,which acts as carrier scattering centers,could be ***,the power factor(PF)is obviously enhanced from~609 to~832μW·m^(−1)·K^(−2),and k is simultaneously decreased from~0.52 to~0.43 W·m^(−1)·K^(−1) at 636 ***,a peak figure of merit(zT)of~1.23 at 636 K and an average zT(zTavg)of~1.12 in the temperature range of 523–623 K are achieved,which are one of the best values among the AgCuTe-based TE *** study could provide new guidance to enhance the performance by designing superior multiphase interfaces in the TE materials.

关键词： thermoelectric(TE)materials AgCuTe phase interface carrier scattering phonon scattering

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Enhancement of fMAX of InP-based HEMTs by double-recessed offset gate process

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Chinese Physics B 2022年第5期31卷 743-748页

作者： Bo Wang Peng Ding Rui-Ze Feng Shu-Rui Cao Hao-Miao Wei Tong Liu Xiao-Yu Liu Hai-Ou Li Zhi Jin Guangxi Key Laboratory of Precision Navigation Technology and Application Guilin University of Electronic TechnologyGuilin 541004China High-Frequency High-Voltage Device and Integrated Circuits Center Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029China

A double-recessed offset gate process technology for In P-based high electron mobility transistors(HEMTs)has been developed in this ***-recessed and double-recessed HEMTs with different gate offsets have been fabricated and *** with single-recessed devices,the maximum drain-source current(I_(D,max))and maximum extrinsic transconductance(g_(m,max))of double-recessed devices decreased due to the increase in series ***,in terms of RF performance,double-recessed HEMTs achieved higher maximum oscillation frequency(f_(MAX))by reducing drain output conductance(g_(m,max))and drain to gate capacitance(C_gd).In addition,further improvement of fMAXwas observed by adjusting the gate offset of double-recessed *** can be explained by suppressing the ratio of C_(gd)to source to gate capacitance(C_gd)by extending drain-side recess length(Lrd).Compared with the single-recessed HEMTs,the f;of double-recessed offset gate HEMTs was increased by about 20%.

关键词： InP HEMT maximum oscillation frequency(fMAX) double-recess offset gate

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Vertical Mos2Field-Effect Transistor via Chemical Vapor Deposition

Vertical Mos2Field-Effect Transistor via Chemical Vapor Depo...

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2023 Cross Strait Radio Science and Wireless technology Conference, CSRSWTC 2023

作者： Ling, Yong Fa. Luo, Tao Li, Jiexin Lin, Yin Zhang, guangxin Liao, Qing Guilin University of Electronic Technology Guangxi Key Laboratory of Precision Navigation Technology and Application China Hezhou University China

ISBN: (纸本)9798350358971

In this study, we employed the chemical vapor deposition (CVD) method to grow large-area multilayer MoS2 films and fabricated both horizontal MoS2 field-effect transistors (FETs) and MoS2 vertical FETs (VFETs). We conducted a detailed investigation of their electrical characteristics. Initially, high-quality MoS2 films were successfully prepared by altering the CVD growth conditions and utilizing the NaCl-assisted growth method. Subsequently, we fabricated horizontal and vertical MoS2 field-effect transistors using wet etching and ultraviolet lithography. Electrical testing results demonstrated that MoS2 VFETs grown via CVD exhibited greater carrier mobility, lower power consumption, and smaller source-drain spacing compared to their horizontal counterparts. By adjusting the gate voltage, we achieved current control in MoS2 VFETs. This research provides both theoretical and experimental foundations for the fabrication of CVD-grown MoS2 in vertical field-effect transistors, offering insights for future research and development in two-dimensional material electronic devices. © 2023 IEEE.

关键词： CVD MoS2 Vfet 2d material

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A novel IMM Kalman filter with colored multi-outlier non-stationary heavy-tailed measurement noise and uncertain state model

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Digital Signal Processing 2025年 165卷

作者： Runhua Yu Sunyong Wu Honggao Deng School of Information and Communication Guilin University of Electronic Technology Guilin 541004 China Guangxi Key Laboratory of Precision Navigation Technology and Application Guilin University of Electronic Technology Guilin 541004 China School of Mathematics and Computational Science Guilin University of Electronic Technology Guilin 541004 China

A novel interactive multi-model (IMM) Kalman filter is proposed in this paper for the dynamic estimation with colored multi-outlier non-stationary heavy-tailed measurement noise (MNHMN) and uncertain state model. Firstly, the filtering problem with colored MNHMN is converted to the filtering problem with white MNHMN using the measurement difference method and the state expansion approach. To fully fit the multi-outlier non-stationary heavy-tailed property of the white MNHMN, a generalized Gaussian–Student's t mixture (GSTM) distribution is proposed, through which each dimension of the noise is independently modeled as a GSTM distribution. Meanwhile, a multivariate Bernoulli variable is introduced to construct a hierarchical Gaussian model, while the variational Bayesian (VB) technique is used to estimate the system state and the distribution parameters of noise collectively. The IMM method is adopted to deal with state model uncertainty, and a new model conditional likelihood function based on the proposed measurement noise model is derived through the variational lower bound theory. Thus, the lack of an analytical likelihood in the proposed generalized GSTM distribution is effectively resolved. Simulation results demonstrate the effectiveness of the proposed method.

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Enhancing thermoelectric performance in P-type Mg_(3)Sb_(2)-based Zintls through optimization of band gap structure and nanostructuring

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Journal of Materials Science & technology 2024年第3期170卷 25-32页

作者： Yi-bo Zhang Ji-Sheng Liang Chengyan Liu Qi Zhou Zhe Xu Hong-bo Chen Fu-cong Li Ying Peng Lei Miao Guangxi Key Laboratory of Information Material Engineering Research Center of Electronic Information Materials and DevicesMinistry of EducationSchool of Material Science and EngineeringGuilin University of Electronic TechnologyGuilin 541004China Guangxi Key Laboratory for Relativity Astrophysics Center on Nanoenergy ResearchGuangxi Key Laboratory of Processing for Nonferrous Metal and Featured MaterialsSchool of Physical Science&TechnologyGuangxi UniversityNanning 530004China Guangxi Key Laboratory of Precision Navigation Technology and Application Guilin University of Electronic TechnologySchool of Information and CommunicationGuilin 541004China

P-type Mg_(3)Sb_(2)-based Zintls have attracted considerable interest in the thermoelectric(TE)field due to their environmental friendliness and low ***,compared to their n-type counterparts,they show relatively low TE performance,limiting their application in TE *** this work,we simultaneously introduce Bi alloying at Sb sites and Ag doping at Mg sites into the Mg_(3)Sb_(2)to coopera-tively optimize the electrical and thermal properties for the first time,acquiring the highest ZT value of∼0.85 at 723 K and a high average ZT of 0.39 in the temperature range of 323-723 K in sample Mg_(2.94)Ag_(0.06)Sb_(1.9)Bi_(0.1).The first-principle calculations show that the codoping of Ag and Bi can shift the Fermi level into the valence band and narrow the band gap,resulting in the increased carrier concentration from 3.50×10^(17)cm^(-3)in the reference Mg 3 Sb 0.9 Bi 0.1 to∼7.88×10^(19)cm^(-3)in sample Mg 2.94 Ag 0.06 Sb 0.9 Bi *** a result,a remarkable power factor of∼778.9μW m^(-1)K^(-2)at 723 K is achieved in sample Mg 2.94 Ag 0.06 Sb 0.9 Bi ***,a low lattice thermal conductivity of∼0.48 W m^(-1)K^(-1)at 723 K is also obtained with the help of phonon scattering at the distorted lattice,point defects,and nano-precipitates in sample Mg 2.94 Ag 0.06 Sb 0.9 Bi *** synergistic effect of using the multi-element co-doping/-alloying to optimize electrical properties in Mg_(3)Sb_(2)holds promise for further improving the TE performance of Zintl phase materials or even others.

关键词： Thermoelectric materials Band engineering Nanostructuring P-type Mg_(3)Sb_(2) Ag and Bi Co-doping

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Surface plasmon-enhanced dual-band infrared absorber for VO_x-based microbolometer application

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Chinese Physics B 2017年第8期26卷 265-270页

作者：李琦于兵强李兆峰王晓峰张紫辰潘岭峰 Guangxi Key Laboratory of Precision Navigation Technology and Application Guilin University of Electronic Technology School of Microelectronics University of Chinese Academy of Sciences State Key Laboratory of Superlattices and Microstructures Institute of SemiconductorsChinese Academy of Sciences Institute of Semiconductors Chinese Academy of Sciences Institute of Microelectronics Chinese Academy of Sciences Tsinghua University

We propose a periodic structure as an extra absorption layer（i.e., absorber） based on surface plasmon resonance effects, enhancing dual-band absorption in both middle wavelength infrared（MWIR） and long wavelength infrared（LWIR）regions. Periodic gold disks are selectively patterned onto the top layer of suspended SiN/VO_2/SiN *** employ the finite element method to model this structure in COMSOL Multiphysics including a proposed method of modulating the absorption peak. Simulation results show that the absorber has two absorption peaks at wavelengths λ =4.8 μm and λ = 9 μm with the absorption magnitudes more than 0.98 and 0.94 in MWIR and LWIR regions, respectively. In addition, the absorber achieves broad spectrum absorption in LWIR region, in the meanwhile, tunable dual-band absorption peaks can be achieved by variable heights of cavity as well as diameters and periodicity of disk. Thus, this designed absorber can be a good candidate for enhancing the performance of dual band uncooled infrared detector, furthermore, the manufacturing process of cavity can be easily simplified so that the reliability of such devices can be improved.

关键词： surface plasmon resonance effects dual-band absorption vanadium oxide uncooled infrared detector

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Thermoelectric enhancement of p-type Si_(80)Ge_(20) alloy via co-compositing of dual oxides:Respective regulation for power factor and thermal conductivity byβ-Ga_(2)O_(3) and SiO_(2) aerogel powders

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Journal of Advanced Ceramics 2023年第2期12卷 228-241页

作者： Huajun LAI Ying PENG Mengfei WANG Runze SHI Junliang CHEN Chengyan LIU Yifeng WANG Lei MIAO Haiqiao WEI Key Laboratory of Information Material Ministry of EducationGuangxi Key Laboratory of Information MaterialSchool of Materials Science and EngineeringGuilin University of Electronic TechnologyGuilin 541004China Guangxi Key Laboratory of Precision Navigation Technology and Application School of Information and CommunicationGuilin University of Electronic TechnologyGuilin 541004China School of Physical Science and Technology Guangxi UniversityNanning 530004China College of Materials Science and Engineering Nanjing Tech UniversityNanjing 210009China State Key Laboratory of Engines Tianjin UniversityTianjin 300072China

Si-based thermoelectric(TE)materials are exhibiting remarkable perspectives in self-energized applications with their special ***,the relatively high total thermal conductivity(κ)prevents their TE ***,a strategy of co-compositing dual oxides was implemented for enhancing the TE properties of p-type Si_(80)Ge_(20) *** Ga2O_(3) was demonstrated to enhance the power factor(PF)due to the crystallization-induced effect of produced Ga by decomposition on SiGe *** with compositing SiO_(2) aerogel(a-SiO_(2))powder,not only introduced the fine amorphous inclusions and decreased the grain size of host matrix,but also various nano morphologies were formed,i.e.,nano inclusions,precipitations,twin boundaries(TBs),and *** with the eutectic Ge,hierarchical scattering centers impeded the phonon transport comprehensively(decreasing the phonon group velocity(a v)and relaxation time)for reducing the lattice-induced thermal conductivity(lκ).As a result,a minimumκof 2.38 W·m^(−1)·K^(−1) was achieved,which is significantly dropped by 32.6%in contrast with that of the pristine ***,a maximal dimensionless figure of merit(ZT)of 0.9 was achieved at 600℃,which is better than those of most corresponding oxide-composited Si-based bulks.

关键词： thermoelectric(TE)materials SiGe Ga_(2)O_(3) SiO_(2)aerogel(a-SiO_(2)) average velocity of sound hierarchical scattering

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Realizing high thermoelectric performance for p-type SiGe in medium temperature region via TaC compositing

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Journal of Materiomics 2023年第5期9卷 984-991页

作者： Zheng Fan JiSheng Liang Jun-Liang Chen Ying Peng Huajun Lai Jian Nong Chengyan Liu Wangyang Ding Lei Miao Guangxi Key Laboratory for Relativity Astrophysics State Key Laboratory of Featured Metal Materials and Life-cycle Safety for Composite StructuresSchool of Physical Science and TechnologyGuangxi UniversityNanning530004China Engineering Research Center of Electronic Information Materials and Devices Ministry of EducationGuangxi Key Laboratory of Information MaterialGuilin University of Electronic TechnologyGuilin541004China Guangxi Key Laboratory of Precision Navigation Technology and Application Guilin University of Electronic TechnologyGuilin541004China Guangxi Academy of Sciences Nanning530007China

SiGe is recognised as an excellent thermoelectric material with superior mechanical properties and thermal stability in regions with high *** study explores a novel strategy for coregulating thermoelectric transport parameters to achieve high thermoelectric properties of p-type SiGe in the mid-temperature region by incorporating nano-TaC into SiGe combined ball milling with spark plasma *** optimizing the amount of TaC in the SiGe matrix,the power factors were significantly increased due to the modulation doping effect based on the work function matching of SiGe with ***,the ensemble effect of the nanostructure leads to a significant decrease in thermal ***,a high ZT of 1.06 was accomplished at 873 K,which is 64%higher than that of typical radioisotope thermoelectric *** research offers a novel strategy for expanding and enhancing the thermoelectric properties of SiGe materials in the medium temperature range.

关键词： SiGe Thermoelectric Work function matching Modulation doping effect Phonon scattering

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