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Ultra-thin Body Buried In0.35Ga0.65As Channel MOSFETs with Extremely Low Off-current on Si Substrates

Chinese Journal of Electronics 2021年第6期30卷 1017-1021页

作者： WANG Bo DING Peng FENG Ruize WANG Yanfu LIU Xiaoyu SUN Tangyou CHEN Yonghe LIU Xingpeng LI Qi LI Yue LIU Yingbo YIN Yihui ZHAO Hao ZHANG Wei LI Haiou JIN Zhi Guangxi Key Laboratory of Precision Navigation Technology and Application Guilin University of Electronic Technology High-Frequency High-Voltage Device and Integrated Circuits Center Institute of MicroelectronicsChinese Academy of Sciences The 34th Research Institute of China Electronics Technology Group Corporation State Key Laboratory of ASIC & System Fudan University

In this paper, we investigated the electrical properties of the Metal-oxide-semiconductor gate stack of Ti/Al2O3/In P under different annealing conditions. A minimum interface trap density of 3×1011cm-2eV-1is obtained without postmetallization annealing ***, utilizing Ti/Al2O3/In P MOS gate stack,we fabricated ultra-thin body buried In0.35 Ga0.65 As channel MOSFETs on Si substrates with optimized on/off trade-off. The 200 nm gate length device with extremely low off-current of 0.6 n A/μm, and on-off ratio of 3.3×10～5, is demonstrated by employing buried low indium(In0.35Ga0.65As) channel with In P barrier/spacer device structure, giving strong potential for future highperformance and low-power applications.

关键词： silicon gallium arsenide Si substrates size 200.0 nm minimum interface trap density III-V semiconductors As extremely low off-current postmetallization annealing treatment Si Ga In ultra-thin body optimized on-off trade-off MOSFET metal-oxide-semiconductor gate stack InP barrier-spacer device structure annealing elemental semiconductors O aluminium compounds different annealing conditions ultra-thin body buried channel MOSFET Ti-Al indium compounds interface states gate length device -InP

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A Depletion-enhanced N Layers Stacked LDMOS 3

A Depletion-enhanced N Layers Stacked LDMOS

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3rd International Symposium on Semiconductor and Electronic technology, ISSET 2024

作者： Li, Qi Liang, Lanyi Guan, Li Dang, Tianbao Huang, Hong Chen, Yonghe Guilin University of Electronic Technology Guangxi Key Laboratory of Precision Navigation Technology and Application Guilin541004 China Key Laboratory of Microelectronic Devices and Integrated Circuits Navigation Department of Guangxi Zhuang Autonomous Region Guilin541004 China

ISBN: (纸本)9798350390285

With the development of power integrated circuits, LDMOS devices assume a significant role in power device applications due to their elevated input impedance and enhanced conversion rate. Nonetheless, a contradictory relationship exists between the breakdown voltage and specific on-resistance in power LDMOS devices. Consequently, an n-layer stacked lateral double-diffused metal-oxide-semi conductor transistor(SLDMOS) is proposed, in which numerous MOS cells are stacked under the same chip area. The on-state resistance (R_on) of the n layers S-LDMOS is decreased significantly because of the vertical parallel connection, also the interference among devices is weakened through electrode interconnection isolated by oxidation layer. Multiple drift regions are formed by alternate epitaxy N-layer (drift region) and P-layer (substrate), and each drift region is depleted by the top and bottom P substrates, leading to a much lower R_on. The lightly-doped substrate and N/P top region are used to improve the breakdown characteristics, and the floating P layers are introduced to enhance the depletion effect in drift regions and decrease device thicknesses. By optimizing the configuration, a balanced trade-off is obtained. The simulation results indicate that compared with the traditional LDMOS, the 2 layers S-LDMOS exhibits a BV of 356 V and a specific on resistance (R_on,sp) of 13.56 mΩċ cm2, an improvement of 26.2 % and 71.6%, respectively. And the R_on, sp of n layers S-LDMOS will be reduced to less than 1/n of C-LDMOS further. © 2024 IEEE.

关键词： Power integrated circuits

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Broadband 1-bit active coding metasurface for transmission beam scanning

Broadband 1-bit active coding metasurface for transmission b...

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2022 International Applied Computational Electromagnetics Society Symposium, ACES-China 2022

作者： Li, Kexin Gao, Xi Guangxi University of Science and Technology The School of Microelectronics and Materials Engineering Liuzhou China Guilin University of Electronic Technology Guangxi Key Laboratory of Precision Navigation Technology and Application Guilin China

ISBN: (纸本)9781665452366

In this paper, a new type of 1-bit active coding metasurface working in transmissive mode is proposed. The unit cell of the metasurface is a bi-layer meander line spaced by a dielectric substrate. PIN diodes are loaded for each unit cell and the tunable property of metasurface is achieved by controlling the switching state of PIN diodes. Simulated results show that the proposed metasurface occupies high transmission efficiency and the phase condition for 1-bit coding in a wide band from 8.44 to 9.45 GHz. Furthermore, a twin-beam that can scan from 24° to 50° is easily formed by changing the coding sequence of the metasurface. © 2022 IEEE.

关键词： Dielectric materials

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Heterogeneous integration of InP HEMTs on quartz wafer using BCB bonding technology

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Chinese Physics B 2022年第1期31卷 658-663页

作者： Yan-Fu Wang Bo Wang Rui-Ze Feng Zhi-Hang Tong Tong Liu Peng Ding Yong-Bo Su Jing-Tao Zhou Feng Yang Wu-Chang Ding Zhi Jin University of Chinese Academic of Sciences Beijing 100029China High-Frequency High-Voltage Device and Integrated Circuits Center Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029China Guangxi Key Laboratory of Precision Navigation Technology and Application Guilin University of Electronic TechnologyGuilin 541004China

Heterogeneous integrated InP high electron mobility transistors(HEMTs)on quartz wafers are fabricated successfully by using a reverse-grown InP epitaxial structure and benzocyclobutene(BCB)bonding *** channel of the new device is In_(0.7)Ga_(0.3)As,and the gate length is 100 nm.A maximum extrinsic transconductance gm,max of 855.5 mS/mm and a maximum drain current of 536.5 mA/mm are *** current gain cutoff frequency is as high as 262 GHz and the maximum oscillation frequency reaches 288 *** addition,a small signal equivalent circuit model of heterogeneous integration of InP HEMTs on quartz wafer is built to characterize device performance.

关键词： heterogeneous integration InP high electron mobility transistor quartz small-signal model

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Broadband Radar Cross Section Reduction Realized by Complicated Metasurface

Broadband Radar Cross Section Reduction Realized by Complica...

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2022 International Applied Computational Electromagnetics Society Symposium, ACES-China 2022

作者： Yin, Sijie Gao, Xi Guangxi University of Science and Technology The School of Microelectronics and Materials Engineering Liuzhou China Guilin University of Electronic Technology Guilin Guangxi Key Laboratory of Precision Navigation Technology and Application China

ISBN: (纸本)9781665452366

In this paper, a complicated metasurface for radar cross section (RCS) reduction is proposed. The nonuniform metasurface elements occupy anisotropic property. The adjacent metasurface elements are arranged orthogonally. Therefore, the reflected waves form the adjacent elements will generate different phase for a linearly polarized incident wave. Based on the phase cancellation principle, a broadband RCS reduction are achieved. Simulated results show that the proposed nonuniform metasurface achieves 6 dB RCS reduction from 6.6 GHz to 24.1 GHz under normal incidence. © 2022 IEEE.

关键词： Radar cross section

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High-precision Sub-pixel Object Tracking Algorithm 6

High-precision Sub-pixel Object Tracking Algorithm

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6th IEEE International Conference on Computer and Communication Systems, ICCCS 2021

作者： Ji, Yuanfa Yin, Pan Sun, Xiyan Jia, Qianzi Guo, Ning Wu, Sunyong Guanxi Key Laboratory of Precision Navigation Technology and Application Guilin University of Electronic Technology Guilin China

ISBN: (纸本)9780738126043

Aiming at the problem that the positioning accuracy of the KCF tracking algorithm is difficult to reach the pixel level and cannot adapt to the target scale variation well, the correlation filter tracking algorithm based on the scale pyramid achieves higher tracking accuracy, but the tracking speed is greatly reduced. Introducing the logarithmic polar coordinate transformation of the image, an object tracking algorithm based on the logarithmic polar coordinate transformation is proposed. First, the target template is transformed into the logarithmic polar coordinate, and the scale variation of the target is converted into a displacement signal, then extract the HOG features before and after the target template transformation, and the filter model of displacement and scale is established. Finally, the displacement and scale factor of the object are tracked synchronously under the framework of correlation filtering, and the two are merged to obtain the target tracking frame. The experimental results show that: The average overlap precision of the algorithm in this paper is high, and the tracking effect is better (Experiment 1). The algorithm in this paper can track rigid objects stably and can adapt to scale variation accurately very well (Experiment 2). The overall accuracy and success rate are in the first place (Experiment 3). The algorithm in this paper can approximately achieve pixel-level positioning accuracy, and the tracking speed can reach twice the traditional algorithm (Experiment 4). © 2021 IEEE.

关键词： Target tracking

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A 1.8V 109.3 dB SNDR Continuous Time Sigma-Delta Modulator for Audio applications 8

A 1.8V 109.3 dB SNDR Continuous Time Sigma-Delta Modulator f...

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8th International Conference on Integrated Circuits and Microsystems, ICICM 2023

作者： Luo, Yuhao Yue, Hongwei Guilin University of Electronic Technology Guanxi Key Laboratory of Precision Navigation Technology and Application Guilin China

ISBN: (纸本)9798350318517

This paper describes a single-loop 3rd-order continuous time Sigma Delta modulator for audio applications in 180nm CMOS technology. It uses a feedforward topology structure that employs summation ahead technology to reduce circuit power consumption. Meanwhile, it adopts the Negative-R compensation technology to compensate the non-ideal factors of the active RC integrator, and the quantizer consists of a 3-bit flash ADC with low kickback noise dynamic comparator so that improve modulator resolution. The simulation results show that at 1. 8V supply voltage, the SNDR is 109.3 dB, the power consumption is 461.8μ W, and the FOMSNDR is 185.7 dB. © 2023 IEEE.

关键词： Modulators

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Wide EDO Handling Range Chopper Amplifier Based on High Linearity PRs Bulk-Feedback DSL

Wide EDO Handling Range Chopper Amplifier Based on High Line...

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2023 Workshop on Electronics Communication Engineering, WECE 2023

作者： Hu, Sizhe Xu, Weilin Zhu, Jueyong Wei, Baolin Wei, Xueming Education Department of Guangxi Zhuang Autonomous Region Guilin541004 China Guangxi Key Laboratory of Precision Navigation Technology and Application Guilin University of Electronic Technology Guilin541004 China

ISBN: (纸本)9781510672574

Although conventional structure Pseudo Resistors (PRs) can provide high value resistance in a small chip area, they still need to be improved in terms of linearity. A new PR structure with good frequency characteristics and high linearity was proposed for Capacitively-coupled Chopper Instrumentation Amplifier (CCIA). On the other hand, CCIA using a classical analog DC-servo loop (DSL) can only block biological Electrode DC Offset (EDO) ±50mV or so. To calibrate a larger EDO in a dry gel application, a bulk feedback DSL with the new structure PR is proposed which uses the parasitic capacitance at the input of the amplifier and the body effect to block the EDO. The CCIA was designed using a 180 nm CMOS process. It occupies only 0.27 mm2 chip area and consumes 5.4 μA current from a 1.8 V supply. Its input-referred noise varies from 0.44 to 2.2 μVrms, total harmonic distortion of 60 dB. It can calibrate ± 300 mV EDO and the maximum capacitance required for digital DSL is 1.37pF. Compared with the traditional DSL method, the capacitor area is reduced by 29%. © 2024 SPIE. All rights reserved.

关键词： Resistors

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Research on Electro-optic deflection KTiOPO4 crystal 15

Research on Electro-optic deflection KTiOPO4 crystal

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15th International Conference on Microwave and Millimeter Wave technology, ICMMT 2023

作者： Li, Yujia Sun, Fengyuan Guilin University of Electronic Technology Key Laboratory of Microwave and Optical Wave Application Technology Education Department of Guangxi Zhuang Autonomous Region Guilin541004 China Guilin University of Electronic Technology Guangxi Key Laboratory of Precision Navigation Technology and Application Guilin541004 China

ISBN: (纸本)9798350338874

Crystals and microstructure array electrodes are designed to affect the propagation of the light beam. The microstructure electrodes apply an external voltage that changes electric field and spatial distribution of the crystal refractive index to guide beam deflection. There are less studies on electro-optic deflectors based on KTP crystals in the market. Moreover, existing electro-optic deflection has low accuracy and poor stability. To overcome this problem above, the KTP electro-optical deflection model with different electrode structures are proposed in this paper. Through detailed comparisons with these electrode structures, the results from the simulation demonstrate that the good electric field distribution is corresponding to the high efficiency of beam deflection. Additionally, the array serrated electrode as the finalized structure is determined according to analysis of the results, and the beam can achieve deflect at a lower voltage and its shifting distance is 0.2μm. This research can be applied in optical switching, beam scanning and automated tracking, etc. © 2023 IEEE.

关键词： Refractive index

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Analysis of Bridge Vibration Extraction Based on Parameters Optimization Variational Modal Decomposition 5

Analysis of Bridge Vibration Extraction Based on Parameters ...

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5th International Conference on Communications, Information System and Computer Engineering, CISCE 2023

作者： Xia, Yun Wang, Shouhua Sun, Xiyan Information and Communicaiton Schnool Guilin University of Electronic Science and Technology Guilin University of Electronic Technology Guangxi Key Laboratory of Precision Navigation Technology and Application Guilin China

ISBN: (纸本)9798350326796

The bridge vibration data collected by accelerometer contains the event and intensity of the bridge vibration as well as the information of the inherent frequency of the bridge, and the problem of feature extraction of the vibration signal is a prerequisite for the safety monitoring of the bridge. For the problem that the number of modal decompositions and penalty term coefficients affect the extraction of vibration features in the variational modal decomposition, a multi-objective optimization method is proposed, and the optimized algorithm is combined with HHT to extract vibration features. Firstly, the mean envelope entropy and center frequency are used to establish the objective function, determine the number of modal decompositions and penalty coefficients, then the vibration data are processed using the optimized variational modal decomposition method to obtain several individual components, and finally, the vibration event time-frequency map is obtained using HHT. Variational Modal Decomposition (VMD) can accurately extract each component of the simulated signal and outperforms the Empirical Modal Decomposition (EMD) algorithm in terms of anti-mode aliasing. In the vibration information processing of the bridge, the acceleration data processed by VMD-HHT can obtain the individual vibration event time-frequency information, and the bridge vibration frequencies identified by using VMD-HHT differ from the third-order intrinsic frequencies of the bridge by 0.022 Hz, 0.091 Hz, and 0.231 Hz, respectively, indicating that this method has certain reliability. © 2023 IEEE.

关键词： Multiobjective optimization

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