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A novel thermally-stable single-phase phosphor Ca_(2)InTaO_(6):Dy^(3+)for NUV-excited white LEDs

Journal of Rare Earths 2024年第10期42卷 1855-1864页

作者： Jian Hu Ruirui Cui Jun Zhang Peng Linghu Youzhen Shi Xiang Guo Key Laboratory of Micro-Nano-Electronics and Software Technology of Guizhou Province College of Big Data and Information EngineeringGuizhou UniversityGuiyang550025China College of Computer and Information Engineering Guizhou University of CommerceGuiyang550014China

The work focuses on the utilization of the conventional solid-state sintering procedure to synthesize white phosphors Ca_(2)InTaO_(6):xDy^(3+)(0.02≤x≤0.12).Utilizing X-ray diffraction,the phase structure of samples was examined,and the crystal structure was refined using the Rietveld method.A scanning electron microscope was used to analyze the microstructure of ***-principles calculations confirm that the indirect bandgap of Ca_(2)InTaO_(6)is 3.786 eV,The luminous properties and energy transfer mechanism of Ca_(2)InTaO_(6):xDy^(3+)were studied using photoluminescence ***^(4)F_(9/2)→^(6)H_(13/2)transition of Dy^(3+)ions is responsible for the greatest emission peak,which was measured at 575 *** to research,the lifespan falls as the concentration of Dy^(3+)doping amount rises because of frequent interaction and ene rgy transfer between Dy^(3+)*** correlated color temperature of the WLEDs packaged with Ca_(2)InTaO_(6):0.08Dy^(3+)is 4677 K and CIE 1931 chromaticity coordinates are(0.3578,0.3831).Meantime,the phosphor also shows outstanding te mperature stability property,which maintains 83.8%of its initial emission intensity at 450 K(activation energy of 0.1467 eV).The W-LEDs retain their performance for 100 min when powered at 3.4 V voltage and 600 mA current,demonstrating the packed W-LEDs'sustaine d operation at high temperatures.

关键词： Ca_(2)InTaO_(6):Dy^(3+)phosphors Thermal stability Photoluminescence W-LEDs Thermal imaging Rare earths

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Design of cylindrical conformal transmitted metasurface for orbital angular momentum vortex wave generation

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Chinese Physics B 2022年第4期31卷 234-238页

作者： Ben Fu Shi-Xing Yu Na Kou Zhao Ding Zheng-Ping Zhang Key Laboratory of Micro-Nano-Electronics and Software Technology of Guizhou Province College of Big Data and Information EngineeringGuizhou UniversityGuiyang 550025China

We propose a cylindrical conformal transmitted metasurface for orbital angular momentum vortex wave *** for calculating the phase distributions of cylindrical conformal transmitted metasurface is presented.A prototype of the proposed conformal transmitted metasurface is designed,fabricated and *** results shows that the proposed conformal transmitted metasurface can effectively generate vortex waves,which verifies the effectiveness of our *** proposed method may pave the way of vortex wave generation with cylindrical conformal devices.

关键词： orbital angular momentum cylindrical conformal transmitted metasurface

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Integer- and fractional-order cylindrical vector beam generation via self-assembled dichroic dye thin films

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Optics Letters 2025年第8期50卷 2687-2690页

作者： Wu, Yan Liu, Mingqiang Liu, Xuefei Xiao, Wenjun Wang, Gang Wang, Degui Gao, Changsong Wang, Zhen Aierken, Abuduwayiti Bi, Jinshun Wen, Shuangchun Huang, Huihui School of Physics and Electronic Science Guizhou Normal University Guiyang Guizhou550025 China School of Integrated Circuit Guizhou Normal University Guiyang550025 China Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices School of Physics and Electronics Hunan University Changsha410082 China

Integer- and fractional-order cylindrical vector beams have attracted widespread attention due to their wide range of tunable parameters and unique optical properties. In this paper, we propose a method for multi-order vector polarization control using self-assembled monolayers composed of dichroic dye molecules. The surface energy distribution of the liquid crystal polymer substrate is precisely controlled by dynamic laser direct writing lithography technology, driving the dichroic dye molecules to form a spatially continuous angular gradient micro-nanostructure. The results show that the single control element can realize integer- and fractional-order precise continuous cylindrical vector beam polarization state generation. The polarization modulation characteristics of cylindrical vector beams with different polarization orders were studied to reveal the changes in its polarization states during rotation, providing a method for high-precision optical control and measurement. This single polarization element has advantages in system miniaturization, process compatibility, and functional scalability, which are conducive to the flexible design and development of compact and high-precision optical systems. © 2025 Optica Publishing Group.

关键词： Dichroism

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Preparation of Uniform SiO2Insulating Layer on the Inner Wall of TSV by Thermal Oxidation 29

Preparation of Uniform SiO2Insulating Layer on the Inner Wal...

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29th International Symposium on Semiconductor Manufacturing, ISSM 2022

作者： Fengjie, Guo Yang, Ran Jing Shuo, Wang Kui, Ma Shun, Yang Fa Guizhou Provincial Key Laboratory of Micro and Nano Electronics and Software Technology College of Big Data and Information Engineering Guizhou University Guizhou Province Guiyang City China

ISBN: (纸本)9781665471336

SiO2 insulating layer is an indispensable part of a TSV. In the current process, the SiO2 insulating layer is commonly deposited on the inner wall of the TSV based on deep trench sputtering method. The thickness at different position (neck, middle, bottom) of the SiO2 insulating layer, deposited by deep trench sputtering, is non-uniform. In this paper, the thickness uniformity of SiO2 insulating layer prepared on the inner wall of TSV based on CVD&PVD process and thermal oxidation method is comparatively studied. The experimental results show that, based on the CVD&PVD process, the average thickness of the SiO2 insulating layer at middle and bottom position of the TSV has changed by - 54.02% and - 58.30% compared with that at the top position, respectively. Based on the thermal oxidation method, the average thickness of the SiO2 insulating layer at middle and bottom position of the TSV has changed by 1.17% and 0.26% compared with that at the top position, respectively. The thermal oxidation method can realize the SiO2 insulating layer with uniform thickness on the inner wall of TSV. © 2022 IEEE.

关键词： Silica

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Experimentally Study on the Effect of RIE Etching Power on Etching Rate of β-Ga2O3Thin Film 29

Experimentally Study on the Effect of RIE Etching Power on E...

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29th International Symposium on Semiconductor Manufacturing, ISSM 2022

作者： Xu, Wang Yang, Ran Jing Lai, Yang Shun, Yang Fa Kui, Ma College of Big Data and Information Engineering Guizhou University China Guizhou Provincial Key Laboratory of Micro and Nano Electronics and Software Technology Guizhou Province Guiyang City China

ISBN: (纸本)9781665471336

As a member of ultra-wide band gap semiconductor materials, β-Ga2O3 materials have attracted wide attention from researchers in the semiconductor field in recent years. Etching process is crucial to realize semiconductor devices and integrated circuits based on β-Ga2O3 materials. Based on the reaction ion etching process commonly used in silicon-based semiconductor technology, the etching experiment research of β-Ga2O3 thin film is carried out. The β-Ga2O3film is etched with SF6, based on the induction coupled reaction ion etching. The effect of RIE etching power, excitation power and bias power, on etching rate of β-Ga2O3 thin film has been studied. SEM characterization results show that the etching rate is the highest at 600W excitation power. The etching rate increases with the increase of bias power. The etching rate at 200W bias power is slightly higher than that at 150W bias power. However, the photoresist used as the etch mask will be damaged at 200W bias power. © 2022 IEEE.

关键词： Etching

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Propagation of terahertz waves in nonuniform plasma slab under “electromagnetic window”

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Chinese Physics B 2022年第3期31卷 399-405页

作者： Hao Li Zheng-Ping Zhang Xin Yang College of Big Data and Information Engineering Guizhou UniversityGuiyang 550025China Semiconductor Power Device Reliability Engineering Research Center of Ministry of Education Guizhou UniversityGuiyang 550025China Key Laboratory of Micro-Nano-Electronics and Software Technology of Guizhou Province Guiyang 550025China

The application of magnetic fields, electric fields, and the increase of the electromagnetic wave frequency are upand-coming solutions for the blackout problem. Therefore, this study considers the influence of the external magnetic field on the electron flow and the effect of the external electric field on the electron density distribution, and uses the scattering matrix method(SMM) to perform theoretical calculations and analyze the transmission behavior of terahertz waves under different electron densities, magnetic field distributions, and collision frequencies. The results show that the external magnetic field can improve the transmission of terahertz waves at the low-frequency end. Magnetizing the plasma from the direction perpendicular to the incident path can optimize the right-hand polarized wave transmission. The external electric field can increase the transmittance to some extent, and the increase of the collision frequency can suppress the right-hand polarized wave cyclotron resonance caused by the external magnetic field. By adjusting these parameters, it is expected to alleviate the blackout phenomenon to a certain extent.

关键词： terahertz wave scattering matrix method(SMM) nonuniform magnetized plasma electric field

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Experimentally Study on the Effect of RIE Etching Power on Etching Rate of $\beta-\text{Ga}_{2}\mathrm{O}_{3}$ Thin Film

Experimentally Study on the Effect of RIE Etching Power on E...

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Joint e-Manufacturing and Design Collaboration Symposium (eMDC) & International Symposium on Semiconductor Manufacturing (ISSM)

作者： Wang Xu Ran Jing Yang Yang Lai Yang Fa shun Ma Kui College of Big Data and Information Engineering Guizhou University Guizhou Provincial Key Laboratory of Micro and nano Electronics and Software Technology Guiyang City Guizhou Province

ISBN: (纸本)9781665471343

As a member of ultra-wide band gap semiconductor materials, $\beta-\text{Ga}_{2}\mathrm{O}_{3}$ materials have attracted wide attention from researchers in the semiconductor field in recent years. Etching process is crucial to realize semiconductor devices and integrated circuits based on $\beta-\text{Ga}_{2}\mathrm{O}_{3}$ materials. Based on the reaction ion etching process commonly used in silicon-based semiconductor technology, the etching experiment research of $\beta-\text{Ga}_{2}\mathrm{O}_{3}$ thin film is carried out. The $\beta-\text{Ga}_{2}\mathrm{O}_{3}\text{film}$ is etched with SF6, based on the induction coupled reaction ion etching. The effect of RIE etching power, excitation power and bias power, on etching rate of $\beta-\text{Ga}_{2}\mathrm{O}_{3}$ thin film has been studied. SEM characterization results show that the etching rate is the highest at 600W excitation power. The etching rate increases with the increase of bias power. The etching rate at 200W bias power is slightly higher than that at 150W bias power. However, the photoresist used as the etch mask will be damaged at 200W bias power.

关键词： Integrated circuits Photonic band gap Semiconductor materials Semiconductor devices Sulfur hexafluoride Resists Semiconductor device manufacture

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Preparation of Uniform SiO2 Insulating Layer on the Inner Wall of TSV by Thermal Oxidation

Preparation of Uniform SiO2 Insulating Layer on the Inner Wa...

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Joint e-Manufacturing and Design Collaboration Symposium (eMDC) & International Symposium on Semiconductor Manufacturing (ISSM)

作者： Guo Fengjie Ran Jing Yang Wang Shuo Ma Kui Yang Fa Shun Guizhou Provincial Key Laboratory of Micro and nano Electronics and Software Technology College of Big Data and Information Engineering Guizhou University Guiyang City Guizhou Province China

ISBN: (纸本)9781665471343

SiO 2 insulating layer is an indispensable part of a TSV. In the current process, the SiO 2 insulating layer is commonly deposited on the inner wall of the TSV based on deep trench sputtering method. The thickness at different position (neck, middle, bottom) of the SiO 2 insulating layer, deposited by deep trench sputtering, is non-uniform. In this paper, the thickness uniformity of SiO 2 insulating layer prepared on the inner wall of TSV based on CVD&PVD process and thermal oxidation method is comparatively studied. The experimental results show that, based on the CVD&PVD process, the average thickness of the SiO 2 insulating layer at middle and bottom position of the TSV has changed by - 54.02% and - 58.30% compared with that at the top position, respectively. Based on the thermal oxidation method, the average thickness of the SiO 2 insulating layer at middle and bottom position of the TSV has changed by 1.17% and 0.26% compared with that at the top position, respectively. The thermal oxidation method can realize the SiO 2 insulating layer with uniform thickness on the inner wall of TSV.

关键词： Silicon compounds Semiconductor device manufacture Oxidation Neck Through-silicon vias Sputtering

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One-Bit Reconfigurable Reflective Metasurface Based on Electromagnetically Wideband Element

SSRN

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SSRN 2023年

作者： Wu, Yuhan Yu, Shixing Kou, Na Ding, Zhao Zhang, Zhengping Key Laboratory of Micro-Nano-Electronics and Software Technology of Guizhou Province Engineering Research Center of Semiconductor Power Device Reliability the Ministry of Education College of Big Data and Information Engineering Guizhou University Guiyang550025 China

In this paper, a one-bit reconfigurable reflective metasurface is proposed by electromagnetically wideband elements is proposed. The element has a double-layer structure, the lower dielectric plate is driven by a electromagnetically push-pull solenoid to adjust the air layer thickness between top layer. The element has a wideband characteristic, the phase difference between 1bit and 0bit in 9.3GHz-16GHz is 180°±10°and the bandwidth of the unit reaches 53.6%. A 12x12 prototype was then designed, simulated and measured at 10GHz, 12.5GHz and 15GHz. The maximum gain is 18.4 dBi, 19.08 dBi, 18.8 dBi. The aperture efficiency is 13.51% at 12.5GHz. The 3dB bandwidth is 16%, and the main beam can scan range of ±40° at the centre frequency. © 2023, The Authors. All rights reserved.

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Monopulse transmitarray antenna fed by aperture-coupled microstrip structure

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Frontiers of Information technology & Electronic Engineering 2022年第3期23卷 502-510页

作者： Na KOU Shixing YU Zhao DING Zhengping ZHANG College of Big Data and Information Engineering Guizhou UniversityGuiyang 550025China Key Laboratory of Micro-Nano-Electronics and Software Technology ofGuizhou Province Guiyang 550025China Engineering Research Center of Power Semiconductor Device Reliability of the Ministry of Education Guiyang 550025China

An X-band monopulse antenna based on transmitarray with light-weight and low-cost features is designed,fabricated,and *** proposed antenna is composed of a transmitarray lens,a feed source which combines aperture-coupled microstrip antennas,and a sum-difference(SUM-DIFF)compar-atoi\According to simulation and measurement results of the transmitarray based monopulse antenna,gain of sum beam reaches 21.5 dBi.

关键词： antenna pulse transmit

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