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recess-free enhancement-mode AlGaN/GaN rF HEMTs on Si substrate

Journal of Semiconductors 2024年第6期45卷 81-86页

作者： Tiantian Luan Sen Huang Guanjun Jing Jie Fan Haibo Yin Xinguo Gao Sheng Zhang Ke Wei Yankui Li Qimeng Jiang Xinhua Wang Bin Hou Ling Yang Xiaohua Ma Xinyu Liu High-Frequency High-Voltage Device and Integrated Circuits R&D Center Institute of Microelectronics of Chinese Academy of SciencesBe i-jing 100029China School of integrated Circuits University of Chinese Academy of SciencesBeijing 100049China Faculty of integrated Circuits Xidian UniversityXi’an 710071China

Enhancement-mode(E-mode)GaN-on-Si radio-frequency(rF)high-electron-mobility transistors(HEMTs)were fabri-cated on an ultrathin-barrier(UTB)AlGaN(<6 nm)/GaN heterostructure featuring a naturally depleted 2-d electron gas(2dEG)*** fabricated E-mode HEMTs exhibit a relatively high threshold voltage(VTH)of+1.1 V with good uniformity.A maxi-mum current/power gain cut-off frequency(fT/fMAX)of 31.3/99.6 GHz with a power added efficiency(PAE)of 52.47%and an out-put power density(Pout)of 1.0 W/mm at 3.5 GHz were achieved on the fabricated E-mode HEMTs with 1-μm gate and Au-free ohmic contact.

关键词： AlGaN/GaN heterostructure ultrathin-barrier enhancement-mode radio-frequency power added efficiency silicon substrate

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Enhanced quality of Al_(2)O_(3)/SiC gate stack via microwave plasma annealing

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rare Metals 2024年第10期43卷 5362-5371页

作者： Nan-Nan You Xin-Yu Liu Qian Zhang Zhen Wang Jia-Yi Wang Yang Xu Xiu-Yan Li Yu-Zheng Guo Sheng-Kai Wang High-Frequency High-Voltage Device and Integrated Circuits R&D Center Institute of Microelectronics of the Chinese Academy of SciencesBeijing 100029China School of Integrated Circuits University of Chinese Academy of SciencesBeijing 100049China School of Electrical Engineering and Automation Wuhan UniversityWuhan430072China Department of Micro/Nano Electronics School of Electronic Information and Electrical EngineeringShanghai Jiao Tong UniversityShanghai 200240China

The high-quality gate dielectric on silicon carbide(SiC)surface is critical to fabricate high-performance SiC metal-oxide-semiconductor field-effect transistors(MOSFETs).This research employs microwave plasma annealing(MPA)to obtain high-quality Al_(2)O_(3)/SiC gate *** designing MPA atmosphere and optimizing the plasma power,the SiC MOS capacitor with a Al_(2)O_(3)dielectric film shows the enhanced *** interface state density is reduced by 1 order of magnitude to 6×10^(11)cm^(-2)·eV^(-1),the breakdown electric field is increased,and the voltage shift is effectively suppressed Besides,the mechanism of MPA process is discussed in terms of the thermal effect and reactant species.X-ray photoelectron spectroscopy(XPS)results unveil oxygen plasma plays the main *** plasma power during the MPA process results in defect repairs of the firstneighbor Al-O bonding and partial removal of Al-O-H bond from the interface *** study demonstrates that MPA process is an effective option to realize highquality dielectric and interface on SiC.

关键词： Silicon carbide Al_(2)O_(3) Metal-oxide-semiconductor Microwave plasma annealing defect repairs X-ray photoelectron spectroscopy

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An electromagnetic simulation assisted small signal modeling method for InP double-heterojunction bipolar transistors

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Chinese Physics B 2022年第6期31卷 717-724页

作者： Yanzhe Wang Wuchang ding Yongbo Su Feng Yang Jianjun ding Fugui Zhou Zhi Jin School of Microelectronics University of Chinese Academy of SciencesBeijing 100049China High-Frequency High-Voltage Device and Integrated Circuits R&D Center Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029China

We present a convenient and practical electromagnetic(EM)assisted small-signal model extraction method for InP double-heterojunction bipolar transistors(dHBTs).Parasitic parameters of pad and electrode fingers are extracted by means of 3d EM *** simulations with a new excitation scheme are closer to the actual on-wafer measurement *** simulation settings are calibrated by comparing measurement and simulation of OPEN and SHOrT structures.A simplerπ-type topology is proposed for the intrinsic model,in which the base-collector resistance rμ,output resistance rce are deleted,and a capacitance Cce is introduced to characterize the capacitive parasitic caused by the collector finger and emitter ground *** intrinsic parameters are all extracted by exact equations that are derived from rigorous *** method is characterized by its ease of implementation and the explicit physical meaning of extraction *** validations are performed at four biases for three InGaAs/InP HBT devices with 0.8×7μm,0.8×10μm and 0.8×15μm emitter,and quite good fitting results are obtained in the range of 0.1-50 GHz.

关键词： electromagnetic simulation InP double-heterojunction bipolar transistor parameter extraction small-signal modeling

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Comparative Study of the New Type Capping Layer for Hf0.5Zr0.5O2 Ferroelectric Film 9

Comparative Study of the New Type Capping Layer for Hf0.5Zr0...

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9th Annual International Conference on Material Science and Environmental Engineering, MSEE 2021

作者： Zhai, Minglong Liu, Xueyuan Chang, Hudong Liu, Honggang Sun, Bing High-Frequency High-Voltage Device and Integrated Circuits R&D Center Institute of Microelectronics of the Chinese Academy of Sciences Beijing100029 China

The capping layers have great influences on the ferroelectricity of the Hf0.5Zr0.5O2 (HZO) film during annealing process. In this paper we compared the properties of the HZO film with two inorganic nonmetallic capping layers and no capping layer. The remnant (2Pr) of HZO films are 23.5 μC/cm2, 27.3 μC/cm2 and 20.3 μC/cm2 for no capping layer, Si3N4 capping layer and SiO2 capping layer, respectively. The capping layer can change the direction of the coercive filed shift even though the capacitors have the same metal electrodes. © 2022 Institute of Physics Publishing. All rights reserved.

关键词： Silica

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Ge-doped In2O3: First demonstration of Utlizing Ge as Oxygen Vacancy Consumer to Break the Mobility/reliability Tradeoff for high Performance Oxide TFTs

Ge-doped In2O3: First Demonstration of Utlizing Ge as Oxygen...

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2024 IEEE Symposium on VLSI Technology and circuits, VLSI Technology and circuits 2024

作者： Wang, Jiayi Bai, Ziheng Zhang, Kuo Wu, Zhicheng Geng, di Xu, Yang You, Nannan Li, Yuxuan Yang, Guanhua Li, Ling Wang, Shengkai Liu, Ming High-Frequency High-Voltage Device and Integrated Circuits R&d Center Chinese Academy of Sciences Institute of Microelectronics Beijing100029 China Chinese Academy of Sciences Institute of Microelectronics Key Lab of Fabrication Technologies for Integrated Circuits Beijing100029 China University of Chinese Academy of Sciences Beijing10049 China

ISBN: (纸本)9798350361469

For the first time, we demonstrated high-performance Ge-doped In2O3 (IGeO) thin film transistors (TFTs). Through comprehensive understanding of Ge-induced oxygen vacancy (Vo) consumption and crystallization mechanisms, the Vo generation is actively suppressed while increasing its crystallinity. The proposed IGeO TFT with fractional Ge doping (atomic concentration 0.4% by SIMS) presents an enhanced reliability (Δ Vth = 10 m V, +4 V for 3600 s) with high mobility (μFE = 62.7 cm2 V-1 S-1), which makes it a promising way to overcome the mobility/reliability tradeoff in In2O3-based TFTs. © 2024 IEEE.

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designing high k dielectric films with LiPON-Al_(2)O_(3)hybrid structure by atomic layer deposition

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Chinese Physics B 2022年第5期31卷 647-651页

作者： Ze Feng Yitong Wang Jilong Hao Meiyi Jing Feng Lu Weihua Wang Yahui Cheng Shengkai Wang Hui Liu Hong dong Engineering Research Center of Thin Film Optoelectronics Technology Ministry of EducationNankai UniversityTianjin 300350China High-Frequency High-Voltage Device and Integrated Circus R&D Center Institute of Microelectronics of the Chinese Academy of SciencesBeijing 100029China

A large amount of ultra-low-power consumption electronic devices are urgently needed in the new era of the internet of things,which demand relatively low frequency ***,atomic layer deposition has been utilized to fabricate the ion polarization dielectric of the Li PON-Al_(2)O_(3) hybrid *** Li PON thin film is periodically stacked in the Al_(2)O_(3) *** hybrid structure presents a frequency-dependent dielectric constant,of which k is significantly higher than the aluminum oxide matrix from 1 k Hz to 200 k Hz in *** increased dielectric constant is attributed to the lithium ions shifting locally upon the applied electrical field,which shows an additional polarization to the Al_(2)O_(3) *** work provides a new strategy with promising potential to engineers for the dielectric constant of the gate oxide and sheds light on the application of electrolyte/dielectric hybrid structure in a variety of devices from capacitors to transistors.

关键词： high k dielectric atomic layer deposition polarization

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700 V/2.5 A Normally-off Ultrathin-barrier AlGaN(<6nm)/GaN MIS-HEMTs with Improved Gate Overdrive Window and PBTI 35

700 V/2.5 A Normally-off Ultrathin-barrier AlGaN(<6nm)/GaN M...

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35th International Symposium on Power Semiconductor devices and ICs, ISPSd 2023

作者： Luan, Tiantian Huang, Sen Yao, Yixu Jiang, Qimeng Wang, Yuhao Huang, Yifei Feng, Chao Wang, Xinhua Liu, Xinyu Wang, ronghua ren, Yongshuo Cheng, Wanxi Liang, Huinan High-Frequency High-Voltage Device and Integrated Circuits R&d Center Institute of Microelectronics Chinese Academy of Sciences Beijing100029 China University of Chinese Academy of Sciences Beijing100049 China Runxin Microelectronics Corporation Dalian116025 China

ISBN: (纸本)9798350396829

关键词： Aluminum gallium nitride

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Impact of O_(2)post oxidation annealing on the reliability of SiC/SiO_(2)MOS capacitors

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Chinese Physics B 2021年第7期30卷 461-466页

作者： Peng Liu Ji-Long Hao Sheng-Kai Wang Nan-Nan You Qin-Yu Hu Qian Zhang Yun Bai Xin-Yu Liu Key Laboratory of Microelectronics Devices&Integrated Technology Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029China University of Chinese Academy of Sciences Beijing 100049China High-Frequency High-Voltage Device and Integrated Circuits R&D Center Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029China

The effects of dry O_(2)post oxidation annealing(POA)at different temperatures on SiC/SiO_(2)stacks are comparatively studied in this *** results show interface trap density(dit)of SiC/SiO_(2)stacks,leakage current density(Jg),and time-dependent dielectric breakdown(TddB)characteristics of the oxide,are affected by POA temperature and are closely ***,dit,Jg,and inverse median lifetime of TddB have the same trend against POA temperature,which is instructive for SiC/SiO_(2)interface quality ***,area dependence of TddB characteristics for gate oxide on SiC shows different electrode areas lead to same slope of TddB Weibull curves.

关键词： SiC O_(2)post oxidation annealing interface traps MOS

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deep level transient spectroscopy:Tracing interface and bulk trap‐induced degradation in AlGaN/GaN‐heterostructure based devices

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Information & Functional Materials 2024年第3期1卷 282-303页

作者： Kexin deng Sen Huang Xinhua Wang Yixu Yao Yang Yang Li Yu Yaoyao Pei Jiayi An Qimeng Jiang Xinyu Liu Song Yang Kevin J.Chen High‐Frequency High‐Voltage Device and Integrated Circuits R&D Center Institute of Microelectronics of Chinese Academy of SciencesBeijingChina University of Chinese Academy of Sciences BeijingChina Department of Electronic and Computer Engineering Hong Kong University of Science and TechnologyKowloonHong KongChina

The exceptional physical properties of gallium nitride(GaN)position GaNbased power devices as leading candidates for next‐generation high‐efficiency smart power conversion ***,GaN's multi‐component nature results in a high density of epitaxial defects,whereas the introduction of dielectric layers further contributes to severe interface states and dielectric *** factors collectively impair reliability,manifesting as threshold voltage instability and current collapse,which pose significant barriers to the advancement of GaN‐based *** the intrinsic relationship between device reliability and defects is crucial for understanding and addressing reliability degradation *** level transient spectroscopy(dLTS)offers valuable insights by revealing defect‐induced changes in electrical parameters during the capture and emission processes under varying biases,thereby elucidating the influence of defects from GaN buffer layers,AlGaN barriers,dielectric layer,and even at dielectric/(Al)GaN *** research aims to provide a foundational understanding of reliability degradation whereas further enabling enhancements in device performance from the perspectives of epitaxial growth and process preparation,ultimately striving to improve the reliability of GaN‐based devices and unlock their full potential for practical applications.

关键词： deep level transient spectroscopy defects device reliability gallium nitride devices

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Instability of parasitic capacitance in T-shape-gate enhancementmode AlGaN/GaN MIS-HEMTs

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Journal of Semiconductors 2022年第3期43卷 74-77页

作者： Lan Bi Yixu Yao Qimeng Jiang Sen Huang Xinhua Wang Hao Jin Xinyue dai Zhengyuan Xu Jie Fan Haibo Yin Ke Wei Xinyu Liu High-Frequency High-Voltage Device and Integrated Circuits R&D Center Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029China Institute of Microelectronics University of Chinese Academy of SciencesBeijing 100049China

Parasitic capacitances associated with overhangs of the T-shape-gate enhancement-mode(E-mode)GaN-based power device,were investigated by frequency/voltage-dependent capacitance-voltage and inductive-load switching *** overhang capacitances induce a pinch-off voltage distinguished from that of the E-mode channel capacitance in the gate capacitance and the gatedrain capacitance characteristic ***-and voltage-dependent tests confirm the instability caused by the trapping of interface/bulk states in the LPCVd-SiNx passivation ***-level double pulse measurement also reveals its impact on switching transition for power switching applications.

关键词： AlGaN/GaN MIS-HEMTs enhancement-mode T-shape gate parasitic capacitance trapping/de-trapping capacitancevoltage hysteresis

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