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Ge-doped In2O3: First demonstration of Utlizing Ge as Oxygen Vacancy Consumer to Break the Mobility/reliability Tradeoff for high Performance Oxide TFTs

Ge-doped In2O3: First Demonstration of Utlizing Ge as Oxygen...

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Symposium on VLSI Technology

作者： Jiayi Wang Ziheng Bai Kuo Zhang Zhicheng Wu di Geng Yang Xu Nannan You Yuxuan Li Guanhua Yang Ling Li Shengkai Wang Ming Liu High-Frequency High-Voltage Device and Integrated Circuits R&D Center Chinese Academy of Sciences Institute of Microelectronics Beijing China Key Lab of Fabrication Technologies for Integrated Circuits Chinese Academy of Sciences Institute of Microelectronics Beijing China University of Chinese Academy of Sciences Beijing China

ISBN: (数字)9798350361469

ISBN: (纸本)9798350361476

For the first time, we demonstrated high-performance Ge-doped In 2 O 3 (IGeO) thin film transistors (TFTs). Through comprehensive understanding of Ge-induced oxygen vacancy (Vo) consumption and crystallization mechanisms, the Vo generation is actively suppressed while increasing its crystallinity. The proposed IGeO TFT with fractional Ge doping (atomic concentration ~0.4% by SIMS) presents an enhanced reliability (Δ Vth = 10 m V, +4 V for 3600 s) with high mobility (µ FE = 62.7 cm2 V −1 S −1 ), which makes it a promising way to overcome the mobility/reliability tradeoff in In 2 O 3 -based TFTs.

关键词： Oxygen Semiconductor device reliability doping Crystallization Very large scale integration Benchmark testing Germanium

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700 V/2.5 A Normally-off Ultrathin-barrier AlGaN(<6nm)/GaN MIS-HEMTs with Improved Gate Overdrive Window and PBTI

700 V/2.5 A Normally-off Ultrathin-barrier AlGaN(<6nm)/GaN M...

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International Symposium on Power Semiconductor devices and Ics (ISPSd)

作者： Tiantian Luan Sen Huang Yixu Yao Qimeng Jiang Yuhao Wang Yifei Huang Chao Feng Xinhua Wang Xinyu Liu ronghua Wang Yongshuo ren Wanxi Cheng Huinan Liang High-Frequency High-Voltage Device and Integrated Circuits R&D Center Institute of Microelectronics Chinese Academy of Sciences Beijing China University of Chinese Academy of Sciences Beijing China Runxin Microelectronics Corporation Dalian China

700 V/2.5 A enhancement-mode (E-mode) ultrathin-barrier (UTB)-AlGaN (<6nm)/GaN metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs) device was demonstrated on 6-inch GaN-on-Si wafers without AlGaN barrier recess. A combination of plasma-enhanced atomic-layer-deposited (PEALd) AlN and low-pressure chemical-vapor-deposited (LPCVd) SiN x passivation layer is adopted for the recovery of the two-dimensional electron gas (2dEG) in the access region of the E-mode UTB-AlGaN/GaN MIS-HEMTs. Compared to a controlled MOS-Channel-HEMT (MOSC-HEMT) with a fully recessed gate, the fabricated AlGaN-recess-free E-mode GaN-on-Si MIS-HEMTs exhibit a threshold voltage ( $V_{\text{TH}}$ ) of 0.1 V with good uniformity, a maximum drain current of 2.5 A, and a breakdown voltage over 700 V. The device also features a decent gate overdrive window and positive bias temperature instability (PBTI). The UTB-AlGaN/GaN-on-Si technology platform is highly preferred for an AlGaN-recess-free fabrication and integration of GaN-based power devices and ICs.

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demonstration of a 3d-Folded 2dEG-Channel Structure with regrown AlGaN/GaN Heterostructures

Demonstration of a 3D-Folded 2DEG-Channel Structure with Reg...

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IEEE Electron devices Technology and Manufacturing Conference (EdTM)

作者： Fuqiang Guo Sen Huang Xingyu Fu Xuelin Yang Qimeng Jiang Xinguo Gao Shuaiyu Chen Ning Tang Bo Shen State Key Laboratory of Artificial Microstructure and Mesoscopic Physics Nano-optoelectronics Frontier Center of Ministry of Education School of Physics Peking University Beijing China High-Frequency High-Voltage Device and Integrated Circuits R & D Center Institute of Microelectronics of Chinese Academy of Sciences Beijing China

ISBN: (数字)9798331504168

ISBN: (纸本)9798331504175

A novel GaN folded channel with regrown AlGaN/GaN twodimensional electron gas (2dEG) channel on sapphire substrates have been developed. Trench etching was performed on GaN material followed by AlGaN/GaN heterojunction regrowth, achieving the extension of the 2dEG channel from a two-dimensional plane to a threedimensional structure. The heterojunction grown on the trench had a channel sheet resistance of $\sim 1.2 \mathrm{k} \Omega /$ obtained through TLM model. Folding channels could be an attractive technique to optimize breakdown electric fields distribution on limited chip sizes.

关键词： resistance Performance evaluation Heterojunctions HEMTs Etching Wide band gap semiconductors Manufacturing MOdFETs Aluminum gallium nitride Substrates

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Suppression of Bulk Traps in Al2o3 Gate dielectric and its Effect on Threshold voltage Instability in Al2o3/Algan/Gan Metal-Oxide-Semiconductor high Electron Mobility Transistors

SSRN

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SSrN 2023年

作者： deng, Kexin Huang, Sen Wang, Xinhua Jiang, Qimeng Yin, Haibo Fan, Jie Jing, Guanjun Wei, Ke Zheng, Yingkui Shi, Jingyuan Liu, Xinyu High-Frequency High-Voltage Device and Integrated Circuits R&D Center Institute of Microelectronics Chinese Academy of Sciences Beijing100029 China University of Chinese Academy of Sciences Beijing100049 China Key Laboratory of Microelectronic Devices & Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing100029 China

Bulk trapping and its effects on threshold voltage hysteresis (ΔVTH) in Al2O3/AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors (MOS-HEMTs) are researched through isothermal capture transient spectroscopy. A post deposition annealing (PdA) at 500 ℃ in the O2 ambient is confirmed to be an effective way to reduce the bulk traps in the atomic layer deposited (ALd)-Al2O3 film as it contributes to the suppressed ΔVTH in Al2O3/AlGaN/GaN MOS-HEMTs. Isothermal-mode capacitance deep level transient spectroscopy (C-dLTS) is utilized to investigate the threshold voltage instability in Al2O3/AlGaN/GaN MOS-HEMTs. The evolution of the C-dLTS signals verifies the continual charging of oxide bulk traps in the Al2O3 gate dielectric once the gate bias of the MOS-HEMTs is applied exceeding +3 V, which leads to the degraded ΔVTH as well as subthreshold slopes in transfer characterization. Such traps probably stem from the Al-O-H component in as-deposited Al2O3 layers, as detected by X-ray photoelectron spectroscopy (XPS) analysis. Energy band simulation further illustrates the capture process of the oxide bulk traps, verifying the physical relationship between bulk-trapping and ΔVTH. © 2023, The Authors. All rights reserved.

关键词： Gallium nitride

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The roadmap of 2d Materials and devices Toward Chips

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Nano-Micro Letters 2024年第6期16卷 343-438页

作者： Anhan Liu Xiaowei Zhang Ziyu Liu Yuning Li Xueyang Peng Xin Li Yue Qin Chen Hu Yanqing Qiu Han Jiang Yang Wang Yifan Li Jun Tang Jun Liu Hao Guo Tao deng Songang Peng He Tian Tian‑Ling ren School of Integrated Circuits and Beijing National Research Center for Information Science and Technology(BNRist) Tsinghua UniversityBeijing 100049People’s Republic of China School of Microelectronics Fudan UniversityShanghai 200433People’s Republic of China State Key Laboratory of Dynamic Measurement Technology Shanxi Province Key Laboratory of Quantum Sensing and Precision MeasurementNorth University of ChinaTaiyuan 030051People’s Republic of China High‑Frequency High‑Voltage Device and Integrated Circuits R&D Center Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029People’s Republic of China School of Electronic and Information Engineering Beijing Jiaotong UniversityBeijing 100044People’s Republic of China School of Integrated Circuits University of Chinese Academy of SciencesBeijing 100049People’s Republic of China IMECAS-HKUST-Joint Laboratory of Microelectronics Beijing 100029People’s Republic of China

due to the constraints imposed by physical effects and performance degra certain limitations in sustaining the advancement of Moore’s ***-dimensional(2d)materials have emerged as highly promising candidates for the post-Moore era,offering significant potential in domains such as integrated circuits and next-generation ***,in this review,the progress of 2d semiconductors in process engineering and various electronic applications are summarized.A careful introduction of material synthesis,transistor engineering focused on device configuration,dielectric engineering,contact engineering,and material integration are given *** 2d transistors for certain electronic applications including digital and analog circuits,heterogeneous integration chips,and sensing circuits are ***,several promising applications(artificial intelligence chips and quantum chips)based on specific mechanism devices are ***,the challenges for 2d materials encountered in achieving circuit-level or system-level applications are analyzed,and potential development pathways or roadmaps are further speculated and outlooked.

关键词： Two-dimensional materials roadmap integrated circuits Post-Moore era

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A Systematic Characterization Method for Time-resolved Stability and reliability Issues on Lateral GaN Power devices

A Systematic Characterization Method for Time-resolved Stabi...

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International Symposium on Power Semiconductor devices and Ics (ISPSd)

作者： Yifei Huang Qimeng Jiang Sen Huang Xinyu Liu High-Frequency High-Voltage Device and Integrated Circuits R&D Center Institute of Microelectronics of the Chinese Academy of Sciences Beijing China University of Chinese Academy of Sciences Beijing China Key Laboratory of Microelectronic Devices & Integrated Technology Institute of Microelectronics of the Chinese Academy of Sciences Beijing China Institute of Microelectronics University of Chinese Academy of Sciences Beijing China

In this work, three testing modes, including continuous hard switching testing (HSW), high-voltage dC stress testing (dC) and recovery testing (rE), are implemented to characterize time-resolved dynamic $r_{\text{ON}}$ behaviors of GaN HEMT devices, based on the inductive-load evaluation platform. The proposed stressing pattern (dC-HSW-dC-rE) enables the separation of de-stress- and transient-stress-induced dynamic $r_{\text{ON}}$ . Based on the stressing pattern, a novel physical-based characterization method is proposed to identify the irreversible degradation of dynamic $r_{\text{ON}}$ , featuring excellent sensitivity when compared with the traditional methods. In addition, lifetime acceleration experiments are carried out, and the irreversible $r_{\text{ON}}$ degradation exhibits a strong dependence on voltage and current, but a weak dependence on temperature.

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deep-Learning-Enhanced Single-Spin readout in Silicon Carbide at room Temperature

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Physical review Applied 2022年第3期17卷 034046-034046页

作者： Yu-Wei Liao Qiang Li Mu Yang Zheng-Hao Liu Fei-Fei Yan Jun-Feng Wang Ji-Yang Zhou Wu-Xi Lin Yi-dan Tang Jin-Shi Xu Chuan-Feng Li Guang-Can Guo CAS Key Laboratory of Quantum Information University of Science and Technology of China Hefei 230026 People’s Republic of China CAS Center For Excellence in Quantum Information and Quantum Physics University of Science and Technology of China Hefei 230026 People’s Republic of China High-Frequency High-Voltage Devices and Integrated Circuits R&D Center Institute of Microelectronics of Chinese Academy of Sciences 100029 Beijing China

defect spin qubits in silicon carbide have recently drawn widespread attention. Extraction of spin information in the presence of noise always requires multiple repeated measurements, which consumes a large amount of time resources. In this paper, we propose a deep-learning-enhanced method to extract effective parameters from continuous-wave optically detected magnetic resonance (OdMr) spectra and rabi oscillations with less time consumption. Even if the signal-to-noise ratio is reasonably low, a well-trained convolutional neural network (CNN) can predict the resonance peaks of OdMr spectra or the period of rabi oscillations. Because of the fast output of predictions by the CNN, this method can be used to sense the magnetic field in the environment and microwave intensities in real time.

关键词： Coherent control Color centers Crystal defects Quantum information with solid state qubits Semiconductor compounds Artificial neural networks Machine learning Optically detected magnetic resonance

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radiation-hardened property of single-walled carbon nanotube film-based field-effect transistors under low-energy proton irradiation

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Journal of Semiconductors 2021年第11期42卷 18-25页

作者： Xiaorui Zhang Huiping Zhu Song’ang Peng Guodong Xiong Chaoyi Zhu Xinnan Huang Shurui Cao Junjun Zhang Yunpeng Yan Yao Yao dayong Zhang Jingyuan Shi Lei Wang Bo Li Zhi Jin High-Frequency High-Voltage Device and Integrated Circuits R&D Center Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029China Key Laboratory of Science and Technology on Silicon Devices Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029China University of Chinese Academy of Sciences Beijing 100049China Department of Chemistry City University of Hong KongHong Kong 999077China

Strong C-C bonds,nanoscale cross-section and low atomic number make single-walled carbon nanotubes(SWCNTs)a potential candidate material for integrated circuits(ICs)applied in outer ***,very little work combines the simulation calculations with the electrical measurements of SWCNT field-effect transistors(FETs),which limits further understanding on the mechanisms of radiation ***,SWCNT film-based FETs were fabricated to explore the total ionizing dose(TId)and displacement damage effect on the electrical performance under low-energy proton irradiation with different fluences up to 1×1015 p/*** negative shift of the threshold voltage and obvious decrease of the on-state current verified the TId effect caused in the oxide *** stability of the subthreshold swing and the off-state current reveals that the displacement damage caused in the CNT layer is not serious,which proves that the CNT film is ***,according to the simulation,we found the displacement damage caused by protons is different in the source/drain contact area and channel area,leading to varying degrees of change for the contact resistance and sheet *** analyzed the simulation results and electrical measurements,we explained the low-energy proton irradiation mechanism of the CNT FETs,which is essential for the construction of radiation-hardened CNT film-based ICs for aircrafts.

关键词： SWCNT FETs low-energy proton irradiation radiation effects electrical performance TId effect displacement damage effect simulation

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Surface Activated Bonding of Glass Wafers using Oxide Intermediate Layer

Surface Activated Bonding of Glass Wafers using Oxide Interm...

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Electronic Components and Technology Conference (ECTC)

作者： Kai Takeuchi Fengwen Mu Yoshiie Matsumoto Tadatomo Suga Collaborative Research Center Meisei University Hino city Tokyo Japan High-Frequency High-Voltage Device and Integrated Circuits R&D Center Institute of Microelectronics of Chinese Academy of Sciences Lantechnical Service Co. Ltd. Takasaki Gunma Japan

Bonding of glass and other optical materials such as sapphire is a key technology for the optical devices such as beam splitters. In order not to damage the optical performances of these applications, the bonding process should be conducted low temperature especially no more than 300 °C. In addition, the bonding interface should have a sufficient transparency not to limit the light propagation. We investigate the surface activated bonding using aluminum oxide (AlO) layer for the low temperature bonding method with a transparent bonding interface. Aluminosilicate glass and sapphire wafers are successfully bonded via the sputter-deposited AlO layer at room temperature. It is also observed that the bond strength is significantly improved by a post-bonding annealing no more than 300 °C. The XPS analyses and STEM observations reveal that the post-bonding annealing leads to oxidization of the AlO layer, which is associated with the diffusion of Si in case of glass bonding, resulting in an enhancement of the bond strength.

关键词： Performance evaluation Annealing Optical device fabrication Optical propagation Electronic components Glass Silicon

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direct Cu-polyimide Bonding Achieved by Surface Activation and Pt-catalyzed Formic Acid Atmosphere

Direct Cu-polyimide Bonding Achieved by Surface Activation a...

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IEEE International Conference on integrated circuits, Technologies and Applications (ICTA)

作者： Ying Meng runhua Gao Xinhua Wang Xiaojuan Chen Sen Huang Ke Wei dahai Wang Fengwen Mu Xinyu Liu High-Frequency High-Voltage Device and Integrated Circuits R&D Center Institute of Microelectronics Chinese Academy of Sciences Beijing China University of Chinese Academy of Sciences Beijing China Key Laboratory of Microelectronic Devices & Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing China

ISBN: (纸本)9781665417488

recent flexible printed circuit applications of high-frequency wireless communication systems require thicker metal layers on substrates for lower ohmic losses. In this paper, a Cu layer over 50-micron thick was directly generated on the polyimide substrate by heterogeneous bonding method without interlayer. The polyimide was first sputtered a 200 nm-thick Cu layer, and then was activated by oxygen plasma to improve its hydrophilicity and achieve direct adhesion between polyimide and nanoscale Cu deposition, and eventually was bonded with a 50micron-thick Cu foil in a Pt-catalyzed formic acid atmosphere by thermo-compression. The effectiveness of this method was verified by comparing bonding interfaces, shear strength, and fracture modes of bonded samples with and without a Cr interlayer. This method provides a new idea for the integration of heterogeneous materials needed in wearable products and flexible printed circuits.

关键词： Wireless communication integrated circuit technology Flexible printed circuits Atmosphere Metals Polyimides Nanoscale devices

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