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7th International Conference on Information Science and Control Engineering, ICISCE 2020

作者： Peng, Song-Ang Zhou, Zhe-Hai Jin, Zhi Yang, Qiang Zhang, Jing Shi, Yu-Fan Institute of Microelectronic Chinese Academy of Sciences High-Frequency High-Voltage Device and Integrated Circuits R D Center Beijing100029 China Beijing Information Science and Technology University School of Instrumentation Science and Optoelectronic Engineering Beijing100192 China North China University of Technology College of Information Science and Technology Beijing100144 China

ISBN: (纸本)9781728164069

The complementary doping top-gated graphene field effect transistor (GFET) was fabricated. The neutral polarity of channel doping in the GFET can be converted from n-type to p-type via altering the gate voltage sweeping range. This conversion can be attributed to the charge exchange between graphene and interface trap sites formed in O3 based atomic layer deposition Al_device{O}_device dielectric layer. The external electric field across the metal/oxide/graphene stack could be tuned by the gate voltage. The charge carriers in channel are stored in trap sites and thus the intrinsic electric property of graphene is changed. This work opens the possibility of complementary p-and n-type top-gated graphene devices for multiple applications. © 2020 IEEE.

关键词： Graphene

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Applications of MXenes in human-like sensors and actuators

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Nano research 2023年第4期16卷 5767-5795页

作者： Jinbo Pang Songang Peng Chongyang Hou Xiao Wang Ting Wang Yu Cao Weijia Zhou ding Sun Kai Wang Mark H.rümmeli Gianaurelio Cuniberti Hong Liu Institute for Advanced Interdisciplinary Research(iAIR) Collaborative Innovation Center of Technology and Equipment for Biological Diagnosis and Therapy in Universities of ShandongUniversity of JinanJinan 250022China Institute for Materials Science and Max Bergmann Center of Biomaterials Technische Universität DresdenDresden 01069Germany Center for Advancing Electronics Dresden Technische Universität DresdenDresden 01069Germany Dresden Center for Computational Materials Science Technische Universität DresdenDresden 01062Germany Dresden Center for Intelligent Materials(GCL DCIM) Technische Universität DresdenDresden 01062Germany High-Frequency High-Voltage Device and Integrated Circuits R&D Center Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029China Key Laboratory of Microelectronic Devices&Integrated Technology Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029China Shenzhen Key Laboratory of Nanobiomechanics Shenzhen Institute of Advanced TechnologyChinese Academy of SciencesShenzhen 518055China State Key Laboratory of Biobased Material and Green Papermaking Qilu University of TechnologyShandong Academy of SciencesJinan 250353China School of Bioengineering Qilu University of TechnologyShandong Academy of ScienceJinan 250353China Key Laboratory of Modern Power System Simulation and Control&Renewable Energy Technology(Ministry of Education) Northeast Electric Power UniversityJilin 132012China School of Electrical Engineering Northeast Electric Power UniversityJilin 132012China School of Electrical Engineering Weihai Innovation Research InstituteQingdao UniversityQingdao 266000China School of Electrical and Computer Engineering Jilin Jianzhu UniversityChangchun 130118China Institute for Complex Materials Leibniz Institute for Solid State and Materials Research Dresden(IFW Dresden)20 Helmholtz StrasseDresden 01069Germany College of Energy Soochow Institute for Energy and Materials Innovations Soochow UniversitySuzhou 215006China Key L

Human beings perceive the world through the senses of sight,hearing,smell,taste,touch,space,and *** first five senses are prerequisites for people to *** sensing organs upload information to the nervous systems,including the brain,for interpreting the surrounding ***,the brain sends commands to muscles reflexively to react to stimuli,including light,gas,chemicals,sound,and ***,as an emerging two-dimensional material,has been intensively adopted in the applications of various sensors and *** this review,we update the sensors to mimic five primary senses and actuators for stimulating muscles,which employ MXene-based film,membrane,and composite with other functional ***,a brief introduction is delivered for the structure,properties,and synthesis methods of ***,we feed the readers the recent reports on the MXene-derived image sensors as artificial retinas,gas sensors,chemical biosensors,acoustic devices,and tactile sensors for electronic ***,the actuators of MXene-based composite are ***,future opportunities are given to MXene research based on the requirements of artificial intelligence and humanoid robot,which may induce prospects in accompanying healthcare and biomedical engineering applications.

关键词： MXenes sensors actuators gas sensors biosensors tactile sensors sound sensors artificial retina

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Emerging Internet of Things driven carbon nanotubes-based devices

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Nano research 2022年第5期15卷 4613-4637页

作者： Shu Zhang Jinbo Pang Yufen Li Feng Yang Thomas Gemming Kai Wang Xiao Wang Songang Peng Xiaoyan Liu Bin Chang Hong Liu Weijia Zhou Gianaurelio Cuniberti Mark Hrümmeli Collaborative Innovation Center of Technology and Equipment for Biological Diagnosis and Therapy in Universities of Shandong Institute for Advanced Interdisciplinary Research(iAIR)University of JinanJinan 250022China Department of Chemistry Guangdong Provincial Key Laboratory of CatalysisSouthern University of Science and TechnologyShenzhen 518055China Leibniz Institute for Solid State and Materials Research Dresden P.O.Box 270116Dresden D-01171Germany State Key Laboratory of Crystal Materials Center of Bio&Micro/Nano Functional MaterialsShandong University27 Shandanan RoadJinan 250100China School of Electrical Engineering Qingdao UniversityQingdao 266071China Shenzhen Institutes of Advanced Technology Chinese Academy of Sciences 1068 Xueyuan AvenueShenzhen University TownShenzhen 518055China High-Frequency High-Voltage Device and Integrated Circuits R&D Center Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029China Key Laboratory of Microelectronic Devices&Integrated Technology Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029China School of Chemistry and Chemical Engineering University of JinanJinan 250022China College of Energy Soochow Institute for Energy and Materials InnovationsSoochow UniversitySuzhou 215006China Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province Soochow UniversitySuzhou 215006China Centre of Polymer and Carbon Materials Polish Academy of SciencesM.Curie Sklodowskiej 34Zabrze 41-819Poland Institute of Environmental Technology(CEET) VSB-Technical University of Ostrava17.Listopadu 15Ostrava 70833Czech Republic Dresden Center for Computational Materials Science Technische Universität DresdenDresden 01062Germany Dresden Center for Intelligent Materials(GCL DCIM) Technische Universität DresdenDresden 01062Germany Institute for Materials Science and Max Bergmann Center of Biomaterials Technische Universität DresdenDresden 01069Germany Center for Advancing Electronics D

Carbon nanotubes(CNTs)have attracted great attentions in the field of electronics,sensors,healthcare,and energy *** emerging applications have driven the carbon nanotube research in a rapid ***,the structure control over CNTs has inspired an intensive research vortex due to the high promises in electronic and optical device ***,this in-depth review is anticipated to provide insights into the controllable synthesis and applications of high-quality ***,the general synthesis and post-purification of CNTs are briefly ***,the state-of-the-art electronic device applications are discussed,including field-effect transistors,gas sensors,dNA biosensors,and pressure ***,the optical sensors are delivered based on the *** addition,energy applications of CNTs are discussed such as thermoelectric energy ***,future opportunities are proposed for the Internet of Things(IoT)oriented sensors,data processing,and artificial intelligence.

关键词： carbon nanotubes electronics sensors electronic skins Internet of Things artificial intelligence

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Efficient thermal dissipation in wafer-scale heterogeneous integration of single-crystalline𝛽β-Ga_(2)O_(3)thin film on SiC

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Fundamental research 2021年第6期1卷 691-696页

作者： Wenhui Xu Tiangui You Yibo Wang Zhenghao Shen Kang Liu Lianghui Zhang Huarui Sun ruijie Qian Zhenghua An Fengwen Mu Tadatomo Suga Genquan Han Xin Ou Yue Hao Xi Wang State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information TechnologyChinese Academy of SciencesShanghai 200050China The State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology School of MicroelectronicsXidian UniversityXi’an 710071China School of Science and Ministry of Industry and Information Technology Key Laboratory of Micro-Nano Optoelectronic Information System Harbin Institute of TechnologyShenzhen 518055China Department of Physics State Key Laboratory of Surface PhysicsInstitute of Nanoelectronic Devices and Quantum ComputingFudan UniversityShanghai 200433China High-Frequency High-Voltage Device and Integrated Circuits R&D Center Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029China Collaborative Research Center Meisei UniversityHinoJapan Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100049China

The semiconductor,β-Ga_(2)O_(3)is attractive for applications in high power electronic devices with low conduction loss due to its ultra-wide bandgap(∼4.9 eV)and large Baliga’s figure of ***,the thermal conductivity of𝛽β-Ga_(2)O_(3)is much lower than that of other wide/ultra-wide bandgap semiconductors,such as SiC and GaN,which results in the deterioration of𝛽β-Ga_(2)O_(3)-based device performance and reliability due to *** overcome this problem,a scalable thermal management strategy was proposed by heterogeneously integrating wafer-scale single-crystalline𝛽β-Ga_(2)O_(3)thin films on a highly thermally conductive SiC *** of the transferred𝛽β-Ga_(2)O_(3)thin film indicated a uniform thickness to within±2.01%,a smooth surface with a roughness of 0.2 nm,and good crystalline quality with an X-ray rocking curves(XrC)full width at half maximum of 80 *** thermoreflectance measurements were employed to investigate the thermal *** thermal performance of the fabricated𝛽β-Ga_(2)O_(3)/SiC heterostructure was effectively improved in comparison with that of the𝛽β-Ga_(2)O_(3)bulk wafer,and the effective thermal boundary resistance could be further reduced to 7.5 m 2 K/GW by a post-annealing *** barrier diodes(SBds)were fabricated on both a𝛽β-Ga_(2)O_(3)/SiC heterostructured material and a𝛽β-Ga_(2)O_(3)bulk *** thermal imaging revealed the temperature increase of the SBds on𝛽β-Ga_(2)O_(3)/SiC to be one quarter that on the𝛽β-Ga_(2)O_(3)bulk wafer with the same applied power,which suggests that the combination of the𝛽-Ga_(2)O_(3)thin film and SiC substrate with high thermal conductivity promotes heat dissipation in𝛽β-Ga_(2)O_(3)-based devices.

关键词： Thermal management Heterogeneous integration Wafer scale𝛽β-Ga_(2)O_(3)on SiC Ion-cutting technique Schottky barrier diodes(SBds) Transient thermoreflectance(TTr) measurements

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Analysis of the inhomogeneous barrier and phase composition of W/4H-SiC Schottky contacts formed at different annealing temperatures

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Chinese Physics B 2018年第9期27卷 524-528页

作者： Sheng-Xu dong Yun Bai Yi-dan Tang Hong Chen Xiao-Li Tian Cheng-Yue Yang Xin-Yu Liu High-Frequency High-Voltage Device and Integrated Circuits R & D Center Institute of Microelectronics of the Chinese Academy of Sciences Beijing 100029 China University of Chinese Academy of Sciences Beijing 100049 China

The electrical characteristics of W/4H-SiC Schottky contacts formed at different annealing temperatures have been measured by using current-voltage-temperatures（I-V -T） and capacitance-voltage-temperatures（C-V -T） techniques in the temperature range of 25℃-175℃. The testing temperature dependence of the barrier height（BH） and ideality factor（n） indicates the presence of inhomogeneous barrier. Tung＇s model has been applied to evaluate the degree of inhomogeneity, and it is found that the 400℃ annealed sample has the lowest T0 of 44.6 K among all the Schottky contacts. The barrier height obtained from C-V -T measurement is independent of the testing temperature, which suggests a uniform *** x-ray diffraction（Xrd） analysis shows that there are two kinds of space groups of W when it is deposited or annealed at lower temperature（≤500℃）. The phase of W2C appears in the sample annealed at 600℃, which results in the low BH and the high T0. The 500℃ annealed sample has the highest BH at all testing temperatures, indicating an optimal annealing temperature for the W/4H-SiC Schottky rectifier for high-temperature application.

关键词： SiC Schottky contact inhomogeneity barrier x-ray diffraction（Xrd）

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Mechanisms and characteristics of large-area high-current-density 4H-SIC trench junction barrier schottky diodes 12th

Mechanisms and characteristics of large-area high-current-de...

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12th European Conference on Silicon Carbide and related Materials, ECSCrM 2018

作者： Tang, Yidan dong, Shengxu Bai, Yun Yang, Chengyue Li, Chengzhan Liu, Xinyu High-Frequency High-Voltage Devices and Integrated Circuits R&D Center Institute of Microelectronics of Chinese Academy of Sciences Beijing China University of Chinese Academy of Sciences Beijing China Zhuzhou CRRC Times Electric Co. Ltd ZhuZhou China

ISBN: (纸本)9783035713329

Mechanisms and characteristics of optimized main junction for 4H-SiC trench junction barrier Schottky (TMJBS) diodes were investigated by theories and experiments. From these simulation and experimental values, we can conclude that TMJBS device has better reverse performance, such as the best reverse blocking capability and lowest reverse surface leakage current than the conventional JBS and TJBS device while maintaining good forward characteristics. Furthermore, The large area TMJBS diodes with high current density show the better reverse characteristics than the small area one at an acceptable forward characteristics. The TMJBS structure can significantly reduce the influence of the Schottky interface and is more suitable for manufacturing high current density and large area devices. © 2019 Trans Tech Publications Ltd, Switzerland.

关键词： diodes

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Simulation of electrothermal characteristics of 1200V/75A 4H-SiC JBS

Simulation of electrothermal characteristics of 1200V/75A 4H...

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Asia-Pacific Conference on Silicon Carbide and related Materials, APCSCrM 2018

作者： Gu, Hang Tang, Yidan Ge, Lan Bai, Yun Zhang, Yourun Luo, Yafei Liu, Xinyu Song, Guan Tan, Ben High-Frequency High-Voltage Devices and Integrated Circuits R&D Center Institute of Microelectronics of Chinese Academy of Sciences Beijing China University of Electronics Science and Technology of China Chengdu China University of Chinese Academy of Sciences Beijing China Electronic Technology Co. Ltd Shanghai China

ISBN: (纸本)9783035713855

In this paper the electrothermal properties of the 4H-SiC JBS (Junction barrier Schottky) diode is investigated. FloTHErM and Silvaco TCAd are used for electrothermal simulation at the same time. Firstly, the effect of rjc (junction-to-case thermal resistance) on junction temperature is investigated, the result shows that the junction temperature is more sensitive to the rjc in the current heating mode because of some kind of positive feedback. Then, a current pulse is applied to the JBS, result shows that this kind of positive feedback is especially noticeable. Finally, the JBS will be compared with PIN under high current density pulsed operation, in order to analyze their thermal sensitivity to rjc. © 2019 Trans Tech Publications Ltd, Switzerland.

关键词： Silicon carbide

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realization of the complementary doping top-gated graphene filed effect transistor

Realization of the complementary doping top-gated graphene f...

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International Conference on Information Science and Control Engineering (ICISCE)

作者： Song-ang Peng Zhe-hai Zhou Zhi Jin Qiang Yang Jing Zhang Yu-fan Shi High-Frequency High-Voltage Device and Integrated Circuits R & D Center Institute of Microelectronic Chinese Academy of Sciences Beijing China School of Instrumentation Science and Optoelectronic Engineering Beijing Information Science and Technology University Beijing China College of Information Science and Technology North China University of Technology Beijing China

The complementary doping top-gated graphene field effect transistor (GFET) was fabricated. The neutral polarity of channel doping in the GFET can be converted from n-type to p-type via altering the gate voltage sweeping range. This conversion can be attributed to the charge exchange between graphene and interface trap sites formed in O 3 based atomic layer deposition $Al_device{O}_device$ dielectric layer. The external electric field across the metal/oxide/graphene stack could be tuned by the gate voltage. The charge carriers in channel are stored in trap sites and thus the intrinsic electric property of graphene is changed. This work opens the possibility of complementary p-and n-type top-gated graphene devices for multiple applications.

关键词： Information science Control engineering Graphene devices Charge carriers Atomic layer deposition Field effect transistors doping

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Author Correction: development of a numerical model for simulating stress corrosion cracking in spent nuclear fuel canisters

npj Materials Degradation

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npj Materials degradation 2021年第1期5卷 1页

作者： Xin Wu Scott Gordon david Olson Stephen Liu Zeev Shayer Zhenzhen Yu Fengwen Mu School of Chemical Engineering and Technology Sun Yat-Sen University Zhuhai Guangdong 519082 China George S. Ansell Department of Metallurgical and Materials Engineering Colorado School of Mines Golden 80401 CO USA High-Frequency High-Voltage Device and Integrated Circuits R&D Center Institute of Microelectronics of Chinese Academy of Sciences Beijing 100029 China

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Study of temperature-dependent mechanisms and characteristics of 4H-SiC junction barrier Schottky rectifiers

Study of temperature-dependent mechanisms and characteristic...

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International Conference on Silicon Carbide and related Materials, ICSCrM 2017

作者： Tang, Yi dan Liu, Xin Yu Bai, Yun dong, Sheng Xu Xu, Shao dong High-Frequency High-Voltage Devices and Integrated Circuits R and D Center Institute of Microelectronics of Chinese Academy of Sciences Beijing China University of Chinese Academy of Sciences Beijing China

ISBN: (纸本)9783035711455

Temperature-dependent mechanisms and characteristics of 4H-SiC JBS rectifiers were described by theoretical and experimental results. The forward on-resistance of 4H-SiC JBS rectifier consists of several components, the drift region resistance is most sensitive to temperature than others. According to the theoretical and experimental results, the leakage current is mainly affected by the thermionic emission with the image force barrier height lowering and tunneling. At different temperatures and reverse bias, the contributions of thermionic emission with barrier lowering and the tunneling to leakage current are not the same. Samples with the doping concentration of Nd=6.5E15cm-3 and Nd=1E16cm-3 were manufactured in the same process. The forward I–V-T and reverse I–V-T characteristics of the JBS samples were measured at different temperatures (300K to 523K), and temperature-dependent ideality factor, barrier height and resistance were also analyzed. © 2018 Trans Tech Publications, Switzerland.

关键词： Thermionic emission

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