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Annual IEEE Symposium on Gallium Arsenide Integrated Circuit (GaAs IC)

作者： Y. Kwon D. Pavlidis P. Marsh G.I. Ng T. Brock Center for Space Terahertz Technology & Center for High Frequency Microelectronics Solid State Electronics Laboratory Department of Electrical Engineering and Computer Science University of Michigan Ann Arbor MI USA

The design, fabrication, and experimental characteristics of a balanced InAlAs/InGaAs heterostructure diode mixer are presented. The mixer is monolithically integrated on InP substrates and shows a minimum conversion loss of 12.4 dB with a 91 GHz LO (local oscillator) drive of 12 dBm and an IF (intermediate frequency) of 2 GHz. A reasonably flat RF response has been found from 86.5 GHz to 95.5 GHz (10% bandwidth). The characteristics of the planar heterostructure diodes are studied, and the impact of their parameters on the mixer conversion loss is investigated. This diode design is the same as for high-electron-mobility transistors (HEMTs) and offers the possibility of easy monolithic integration with FET components as necessary for millimeter-wave modules.< >

关键词： Diodes Mixers HEMTs MODFETs Fabrication Indium compounds Indium gallium arsenide Indium phosphide Local oscillators Frequency conversion

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Simulation of electromagnetic radiation and scattering using a finite difference-time domain technique

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computer Applications in engineering Education 1992年第1期1卷 45-45页

作者： Li, K. Tassoudji, M.A. Shin, R.T. Kong, J.A. Department of Electrical Engineering and Computer Science and Research Laboratory of Electronics Massachusetts Institute of Technology Cambridge Massachusetts 02139 Kevin Li:received his BS and SM degrees (1990) in Electrical Engineering and EE (Electrical Engineer's) degree (1991) from the Massachusetts Institute of Technology where he is currently pursuing his PhD in Electrical Engineering. Since 1990 he has been the recipient of a United States Air Force Laboratory Graduate Fellowship. His main research interests include electromagnetic scattering radar cross section prediction and numerical techniques. Mr. Li is a member of Tau Beta Pi and a student member of IEEE. M. Ali Tassoudji:received his BS (1987) and MS (1989) degrees in Electrical Engineering from the University of Michigan Ann Arbor. Since 1989 he has been a research assistant at the Massachusetts Institute of Technology where he is currently working towards his PhD in Electrical Engineering. His research interests include electromagnetic scattering and propagation modeling of microwave circuits and numerical techniques. Mr. Tassoudji is a member of IEEE and Eta Kappa Nu. Robert T. Shin:received his SB (1977) SM (1980) and PhD (1984) in Electrical Engineering from the Massachusetts Institute of Technology. Since 1984 he has been a member of the Air Defense Techniques Group at MIT Lincoln Laboratory as a Research Staff member and as a Senior Staff member from 1989. His research interests are in the areas of electromagnetic wave scattering and propagation theoretical model development and data interpretation for microwave remote sensing. He is the coauthor ofTheory of Microwave Remote Sensing(Wiley 1985). Dr. Shin is a member of The Electromagnetics Academy IEEE American Geophysical Union Tau Beta Pi Eta Kappa Nu and Commission F of the International Union of Radio Science. Since 1987 he has served on the Editorial Board of theJournal of Electromagnetic Waves and Applications(JEWA). Jin Au Kong:is Professor of Electrical Enginee

The finite difference-time domain (FD-TD) technique is applied to the solution of Maxwell's equations. A computer program, which can be used to simulate and study numerous electromagnetic phenomena, is developed and implemented on an IBM 386 compatible personal computer. The FD-TD technique is a useful tool for students in electromagnetics. The technique is flexible and can be applied to many basic EM scattering and radiation problems. Because field solutions are found as a function of time, visualization of the propagation of the EM fields is possible. The FD-TD technique is implemented for a two-dimensional rectangular grid in conjunction with a second-order absorbing boundary condition. Both E- and H-field polarizations are analyzed. Finite objects consisting of dielectric, magnetic and conducting materials, and perfectly conducting infinite ground planes are modeled. Plane wave and line current sources are implemented. In addition to the capability of animating the propagation of the EM fields, radiation and scattering patterns can be generated.

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THEORETICAL-ANALYSIS OF HEMT BREAKDOWN DEPENDENCE ON DEVICE DESIGN PARAMETERS

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IEEE TRANSACTIONS ON ELECTRON DEVICES 1991年第2期38卷 213-221页

作者： CHAU, HF PAVLIDIS, D TOMIZAWA, K Center of High-Frequency Microelectronics Solid-State Electronics Laboratory Department of Electrical Engineering and Computer Science University of Michigan Ann Arbor MI USA

A two-dimensional numerical analysis is presented to investigate the breakdown characteristics of single- and double-channel AlGaAs/GaAs HEMT's. The influence of the doped layer thickness as well as the thickness of an undoped i-layer under the gate is analyzed. Impact ionization is considered to be the dominant breakdown mechanism. All simulations revealed the existence of a high electric field region near the gate contact. Breakdown occurs in the gate-drain region and the (breakdown) path which maximizes the ionization integral is entirely in the AlGaAs layer. For increased donor layer thickness, single-channel devices biased near pinchoff have gate-drain breakdown voltages varying from 8 to 14 V with corresponding peak electric field values in the range of 8.2 x 10(5) to 2.4 x 10(6) V/cm. The breakdown voltage increases with increasing gate bias \V(gs)\ due to a screening effect of transverse from longitudinal electric field. Double-channel HEMT's have slightly higher breakdown than single-channel especially near pinchoff and for thin donor layers. The use of large A1 composition, i.e., material of small impact ionization coefficients improves breakdown. Surface depletion does not modify the breakdown considerably (DELTA-V(***) approximately 0.6 V).

关键词： impact ionisation breakdown characteristic design parameter Electric fields Device Design Breakdown voltage Theoretical analysis single-channel aluminum gallium arsenides Modulo layer thickness high electron mobility transistors Breakdown

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A MODIFIED HARMONIC-OSCILLATOR APPROXIMATION SCHEME FOR THE DIELECTRIC-CONSTANTS OF ALXGA1-XAS

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JOURNAL OF APPLIED PHYSICS 1991年第1期70卷 409-417页

作者： TERRY, FL Center for High Frequency Microelectronics Solid State Electronics Laboratory Department of Electrical Engineering and Computer Science University of Michigan Ann Arbor Michigan 48109‐2122

The dielectric functions of Al(x)Ga1-xAs have recently been measured for several Al mole fractions over the 1.5-6.0 eV wavelength range [D.E. Aspnes, S. M. Kelso, R. A. Logan, and R. Bhat, J. Appl. Phys 60, 754 (1986)]. To make use of this data to perform optical modeling for spectroscopic ellipsometry analysis of Al(x)Ga1-xAs-containing samples, and for other optical modeling purposes, a resonable interpolation scheme is required to estimate the dielectric functions of intermediate compounds. In this work, we will present a modified version of the harmonic oscillator approximation (HOA) of Erman et al. [M. Erman, J. B. Theeten, P. Chambon, S. M. Kelso, and D. E. Aspnes, J. Appl. Phys. 56, 2664 (1984)] to model the experimental data and interpolate between the known compositions over the 1.5-5.0 eV range. Our model uses additional harmonic oscillators and allows each oscillator to have an independent phase. These modifications significantly improve the accuracy of the approximation for photon energies at and below the fundamental band-gap energy. This allows much more accurate modeling of reflection problems for multilayer GaAs/AlGaAs structures. We will present test of this approach with simulations of spectroscopic ellipsometry data using known data, and with measured spectroscopic ellipsometer data on Al(x)Ga1-xAs-containing samples grown by molecular-beam epitaxy and organometallic chemical vapor deposition.

关键词： ALUMINIUM ARSENIDES GALLIUM ARSENIDES DIELECTRIC PROPERTIES ELLIPSOMETRY MATHEMATICAL MODELS HARMONIC OSCILLATOR MODELS MULTILAYERS REFLECTIVITY MOLECULAR BEAM EPITAXY CHEMICAL VAPOR DEPOSITION

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THE INFLUENCE OF GATE-FEEDER MESA-EDGE CONTACTING ON SIDEGATING EFFECTS IN IN0.52AL0.48AS/IN0.53GA0.47AS HETEROSTRUCTURE FET

IEEE ELECTRON DEVICE LETTERS

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IEEE ELECTRON DEVICE LETTERS 1991年第7期12卷 360-362页

作者： CHAN, YJ PAVLIDIS, D NG, GI Center for High Frequency Microelectronics Solid State Electronics Laboratory Department of Electrical Engineering and Computer Science University of Michigan Ann Arbor MI USA

Sidegating effects in InAlAs/InGaAs heterostructure FET's (HFET's) are experimentally investigated. HFET's with the gate air bridge over the mesa edge can maintain 99% of the drain-source (I(ds)) current level at sidegate voltages (V(sg)) extending up to -30 V, while the non-air-bridge configuration of HFET's shows a 30% drop of I(ds) at the same V(sg). This significant discrepancy of sidegating effect is attributed to depletion region modulation at the mesa edge below the gate feeder. By lifting the gate feeder above the mesa step, sidegating is reduced, which suggests the channel/substrate trap effects are negligibly small.

关键词： HEMTs MODFETs Substrates Indium gallium arsenide Indium compounds Intrusion detection Fabrication Voltage Superlattices Buffer layers

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Harvest rate of reconfigurable pipelines

Harvest rate of reconfigurable pipelines

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IEEE International Symposium on Defect and Fault Tolerance in VLSI Systems

作者： Weiping Shi Ming-Feng Chang W. Kent Fuchs Center for Reliable and High-Performance Computing Coordinated Science Laboratory University of Illinois Urbana-Champaign Urbana IL USA Department of Computer Science and Information Engineering National Chiao Tung University Taiwan

Yield analysis for reconfigurable structures is often difficult, due to the defect distribution and irregularity of reconfiguration algorithms. In this paper, the authors give a method to analyze the yield of reconfigurable pipelines for the following model: Given n pipelines with m stages, where each stage of a pipeline is defective with constant probability and spare wires are provided for reconfiguration, the authors calculate the expected percentage of pipelines they can harvest after reconfiguration. By modeling the 'shifting' reconfiguration as weighted chains in a lattice and applying poset theory, they give upper and lower bounds for the harvest rate as a function of m and n.< >

关键词： Pipelines Wires Lattices Very large scale integration Switches Algorithm design and analysis Parallel architectures Supercomputers Equations engineering management

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DIODE MULTIPLIERS FOR SUBMILLIMETER-WAVE INALAS/INGAAS HETEROSTRUCTURE MONOLITHIC INTEGRATED-CIRCUITS

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MICROWAVE AND OPTICAL TECHNOLOGY LETTERS 1991年第1期4卷 38-43页

作者： KWON, Y PAVLIDIS, D Center for Space Terahertz Technology and Center for High Frequency Microelectronics Solid State Electronics Laboratory Department of Electrical Engineering and Computer Science The University of Michigan Ann Arbor Michigan 48109-2122

InAlAs/InGaAs heterostructures are studied as multiplier elements for submillimeter-wave monolithic integrated circuits. The designs considered for this purpose are based on the principle of conventional HEMT, HEMT with n+ bottom layer and a new proposed scheme of quantum-confined modulated charge (QCMC). The QCMC diode is analyzed theoretically and experimentally showing its potential operation capability at 1.5 THz.

关键词： DIODE MULTIPLIER SUBMILLIMETER-WAVE MONOLITHIC INTEGRATED CIRCUIT INALAS/INGAAS HETEROSTRUCTURE HEMT DIODE

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Reliability issues of InAlAs/InGaAs high-electron-mobility transistors

Reliability issues of InAlAs/InGaAs high-electron-mobility t...

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Indium Phosphide and Related Materials Conference

作者： M. Tutt G.I. Ng D. Pavlidis J. Mansfield Center for High Frequency Microelectronics Department of Electrical Engineering and Computer Science University of Michigan Ann Arbor MI USA Center for High Frequency Microelectronics Department of Electrical Engineering and Computer Science North Campus Electron Microbeam Analysis Laboratory University of Michigan Ann Arbor MI USA

The effects of thermally stressing submicron In/sub x/Ga/sub 1-x/As/InAlAs/InP (x>or=0.53) HEMTs for storage periods of up to 100 h at 200 degrees C are discussed. DC characteristics are found to degrade. I/sub DSS/ decreased from 299 mA/mm to 182 mA/mm. G/sub m/ decreased from 513 mS/mm to 209 mS/mm. Decreases in microwave performance were also measured. f/sub T/ and f/sub max/ decreased by more than 30% and 20%, respectively. Evidence indicates that changes in the channel/buffer interface and layers manifested by the presence of additional trapping are responsible for this. Measurements of ohmic contacts show an increase from 0.19 Omega -mm to 0.26 Omega -mm. Results of X-ray analysis and Hall characterization are presented.< >

关键词： Indium compounds Indium gallium arsenide Thermal stresses Indium phosphide HEMTs MODFETs Thermal degradation Decision support systems Microwave measurements Ohmic contacts

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Parallel switch-level simulation for VLSI

Parallel switch-level simulation for VLSI

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European Conference on Design Automation

作者： R.B. Mueller-Thuns D.G. Saab J.A. Abraham Center for Reliable and High Performance Computing Coordinated Science Laboratory University of Illinois Urbana-Champaign Urbana IL USA Computer Engineering Research Center University of Texas Austin Austin TX USA

Switch-level simulation is widely used in the design verification process of Very Large Scale Integrated (VLSI) MOS circuits. In this paper, the authors present methods for accelerating switch-level simulation by mapping it onto general purpose parallel computers. Their target machines are medium-grain multiprocessors (shared memory or message passing machines) and they only consider model parallel computation, where the model of the design to be simulated is partitioned among processors. Efficient strategies are introduced for circuit partitioning as well as the corresponding simulation algorithms. In the authors' approach, they try to minimize the total number of synchronizations between processors, as well as ensure portability and scalability. A preprocessor and simulator were implemented and good performance was obtained for a set of benchmarks. The problem of tight coupling between processors that evaluate a strongly connected component in the circuit in a distributed fashion is highlighted.< >

关键词： Very large scale integration Computational modeling Circuit simulation Concurrent computing Switching circuits Process design Acceleration computer simulation Message passing Partitioning algorithms

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InAlAs/In/sub x/Ga/sub 1-x/As HIGFETs (x>or=0.53) for E/D FET logic applications

InAlAs/In/sub x/Ga/sub 1-x/As HIGFETs (x>or=0.53) for E/D FE...

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Indium Phosphide and Related Materials Conference

作者： Y.-J. Chan D. Pavlidis Center for High Frequency Microelectronics Solid State Electronics Laboratory Department of Electrical Engineering and Computer Science University of Michigan Ann Arbor MI USA

The design of InAlAs/In/sub x/Ga/sub 1-x/As (x>or=0.53) heterostructure insulated-gate FETs with lattice-matched and strained channel designs are investigated. It is shown that DC (g/sub m/,K) and microwave (f/sub T/, f/sub max/) characteristics were enhanced as the In content was increased to 65% in the InGaAs channel: best performance was mu =12890 cm/sup 2//V-s, gm=438 mS/mm, f/sub T/=27 GHz. Orientation effects indicate a V/sub th/ shift up to -0.128 V and a very small g/sub m/ variation. Enhancement- and depletion-mode HIGFET operation was controlled by an additional selective ion implantation in the channel.< >

关键词： Indium compounds FETs Logic Temperature Transconductance Annealing Indium phosphide Buffer layers Strain control Indium gallium arsenide

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