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An electromagnetic simulation assisted small signal modeling method for InP double-heterojunction bipolar transistors

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Chinese Physics B 2022年第6期31卷 717-724页

作者： Yanzhe Wang Wuchang ding Yongbo Su Feng Yang Jianjun ding Fugui Zhou Zhi Jin School of Microelectronics University of Chinese Academy of SciencesBeijing 100049China High-Frequency High-Voltage Device and Integrated Circuits R&D Center Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029China

We present a convenient and practical electromagnetic(EM)assisted small-signal model extraction method for InP double-heterojunction bipolar transistors(dHBTs).Parasitic parameters of pad and electrode fingers are extracted by means of 3d EM *** simulations with a new excitation scheme are closer to the actual on-wafer measurement *** simulation settings are calibrated by comparing measurement and simulation of OPEN and SHOrT structures.A simplerπ-type topology is proposed for the intrinsic model,in which the base-collector resistance rμ,output resistance rce are deleted,and a capacitance Cce is introduced to characterize the capacitive parasitic caused by the collector finger and emitter ground *** intrinsic parameters are all extracted by exact equations that are derived from rigorous *** method is characterized by its ease of implementation and the explicit physical meaning of extraction *** validations are performed at four biases for three InGaAs/InP HBT devices with 0.8×7μm,0.8×10μm and 0.8×15μm emitter,and quite good fitting results are obtained in the range of 0.1-50 GHz.

关键词： electromagnetic simulation InP double-heterojunction bipolar transistor parameter extraction small-signal modeling

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Analysis of the inhomogeneous barrier and phase composition of W/4H-SiC Schottky contacts formed at different annealing temperatures

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Chinese Physics B 2018年第9期27卷 524-528页

作者： Sheng-Xu dong Yun Bai Yi-dan Tang Hong Chen Xiao-Li Tian Cheng-Yue Yang Xin-Yu Liu High-Frequency High-Voltage Device and Integrated Circuits R & D Center Institute of Microelectronics of the Chinese Academy of Sciences Beijing 100029 China University of Chinese Academy of Sciences Beijing 100049 China

The electrical characteristics of W/4H-SiC Schottky contacts formed at different annealing temperatures have been measured by using current-voltage-temperatures（I-V -T） and capacitance-voltage-temperatures（C-V -T） techniques in the temperature range of 25℃-175℃. The testing temperature dependence of the barrier height（BH） and ideality factor（n） indicates the presence of inhomogeneous barrier. Tung＇s model has been applied to evaluate the degree of inhomogeneity, and it is found that the 400℃ annealed sample has the lowest T0 of 44.6 K among all the Schottky contacts. The barrier height obtained from C-V -T measurement is independent of the testing temperature, which suggests a uniform *** x-ray diffraction（Xrd） analysis shows that there are two kinds of space groups of W when it is deposited or annealed at lower temperature（≤500℃）. The phase of W2C appears in the sample annealed at 600℃, which results in the low BH and the high T0. The 500℃ annealed sample has the highest BH at all testing temperatures, indicating an optimal annealing temperature for the W/4H-SiC Schottky rectifier for high-temperature application.

关键词： SiC Schottky contact inhomogeneity barrier x-ray diffraction(Xrd)

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recess-free enhancement-mode AlGaN/GaN rF HEMTs on Si substrate

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Journal of Semiconductors 2024年第6期45卷 81-86页

作者： Tiantian Luan Sen Huang Guanjun Jing Jie Fan Haibo Yin Xinguo Gao Sheng Zhang Ke Wei Yankui Li Qimeng Jiang Xinhua Wang Bin Hou Ling Yang Xiaohua Ma Xinyu Liu High-Frequency High-Voltage Device and Integrated Circuits R&D Center Institute of Microelectronics of Chinese Academy of SciencesBe i-jing 100029China School of integrated Circuits University of Chinese Academy of SciencesBeijing 100049China Faculty of integrated Circuits Xidian UniversityXi’an 710071China

Enhancement-mode(E-mode)GaN-on-Si radio-frequency(rF)high-electron-mobility transistors(HEMTs)were fabri-cated on an ultrathin-barrier(UTB)AlGaN(<6 nm)/GaN heterostructure featuring a naturally depleted 2-d electron gas(2dEG)*** fabricated E-mode HEMTs exhibit a relatively high threshold voltage(VTH)of+1.1 V with good uniformity.A maxi-mum current/power gain cut-off frequency(fT/fMAX)of 31.3/99.6 GHz with a power added efficiency(PAE)of 52.47%and an out-put power density(Pout)of 1.0 W/mm at 3.5 GHz were achieved on the fabricated E-mode HEMTs with 1-μm gate and Au-free ohmic contact.

关键词： AlGaN/GaN heterostructure ultrathin-barrier enhancement-mode radio-frequency power added efficiency silicon substrate

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Impact of O_(2)post oxidation annealing on the reliability of SiC/SiO_(2)MOS capacitors

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Chinese Physics B 2021年第7期30卷 461-466页

作者： Peng Liu Ji-Long Hao Sheng-Kai Wang Nan-Nan You Qin-Yu Hu Qian Zhang Yun Bai Xin-Yu Liu Key Laboratory of Microelectronics Devices&Integrated Technology Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029China University of Chinese Academy of Sciences Beijing 100049China High-Frequency High-Voltage Device and Integrated Circuits R&D Center Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029China

The effects of dry O_(2)post oxidation annealing(POA)at different temperatures on SiC/SiO_(2)stacks are comparatively studied in this *** results show interface trap density(dit)of SiC/SiO_(2)stacks,leakage current density(Jg),and time-dependent dielectric breakdown(TddB)characteristics of the oxide,are affected by POA temperature and are closely ***,dit,Jg,and inverse median lifetime of TddB have the same trend against POA temperature,which is instructive for SiC/SiO_(2)interface quality ***,area dependence of TddB characteristics for gate oxide on SiC shows different electrode areas lead to same slope of TddB Weibull curves.

关键词： SiC O_(2)post oxidation annealing interface traps MOS

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Comparative Study of the New Type Capping Layer for Hf0.5Zr0.5O2 Ferroelectric Film 9

Comparative Study of the New Type Capping Layer for Hf0.5Zr0...

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9th Annual International Conference on Material Science and Environmental Engineering, MSEE 2021

作者： Zhai, Minglong Liu, Xueyuan Chang, Hudong Liu, Honggang Sun, Bing High-Frequency High-Voltage Device and Integrated Circuits R&D Center Institute of Microelectronics of the Chinese Academy of Sciences Beijing100029 China

The capping layers have great influences on the ferroelectricity of the Hf0.5Zr0.5O2 (HZO) film during annealing process. In this paper we compared the properties of the HZO film with two inorganic nonmetallic capping layers and no capping layer. The remnant (2Pr) of HZO films are 23.5 μC/cm2, 27.3 μC/cm2 and 20.3 μC/cm2 for no capping layer, Si3N4 capping layer and SiO2 capping layer, respectively. The capping layer can change the direction of the coercive filed shift even though the capacitors have the same metal electrodes. © 2022 Institute of Physics Publishing. All rights reserved.

关键词： Silica

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designing high k dielectric films with LiPON-Al_(2)O_(3)hybrid structure by atomic layer deposition

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Chinese Physics B 2022年第5期31卷 647-651页

作者： Ze Feng Yitong Wang Jilong Hao Meiyi Jing Feng Lu Weihua Wang Yahui Cheng Shengkai Wang Hui Liu Hong dong Engineering Research Center of Thin Film Optoelectronics Technology Ministry of EducationNankai UniversityTianjin 300350China High-Frequency High-Voltage Device and Integrated Circus R&D Center Institute of Microelectronics of the Chinese Academy of SciencesBeijing 100029China

A large amount of ultra-low-power consumption electronic devices are urgently needed in the new era of the internet of things,which demand relatively low frequency ***,atomic layer deposition has been utilized to fabricate the ion polarization dielectric of the Li PON-Al_(2)O_(3) hybrid *** Li PON thin film is periodically stacked in the Al_(2)O_(3) *** hybrid structure presents a frequency-dependent dielectric constant,of which k is significantly higher than the aluminum oxide matrix from 1 k Hz to 200 k Hz in *** increased dielectric constant is attributed to the lithium ions shifting locally upon the applied electrical field,which shows an additional polarization to the Al_(2)O_(3) *** work provides a new strategy with promising potential to engineers for the dielectric constant of the gate oxide and sheds light on the application of electrolyte/dielectric hybrid structure in a variety of devices from capacitors to transistors.

关键词： high k dielectric atomic layer deposition polarization

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Enhanced quality of Al_(2)O_(3)/SiC gate stack via microwave plasma annealing

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rare Metals 2024年第10期43卷 5362-5371页

作者： Nan-Nan You Xin-Yu Liu Qian Zhang Zhen Wang Jia-Yi Wang Yang Xu Xiu-Yan Li Yu-Zheng Guo Sheng-Kai Wang High-Frequency High-Voltage Device and Integrated Circuits R&D Center Institute of Microelectronics of the Chinese Academy of SciencesBeijing 100029China School of Integrated Circuits University of Chinese Academy of SciencesBeijing 100049China School of Electrical Engineering and Automation Wuhan UniversityWuhan430072China Department of Micro/Nano Electronics School of Electronic Information and Electrical EngineeringShanghai Jiao Tong UniversityShanghai 200240China

The high-quality gate dielectric on silicon carbide(SiC)surface is critical to fabricate high-performance SiC metal-oxide-semiconductor field-effect transistors(MOSFETs).This research employs microwave plasma annealing(MPA)to obtain high-quality Al_(2)O_(3)/SiC gate *** designing MPA atmosphere and optimizing the plasma power,the SiC MOS capacitor with a Al_(2)O_(3)dielectric film shows the enhanced *** interface state density is reduced by 1 order of magnitude to 6×10^(11)cm^(-2)·eV^(-1),the breakdown electric field is increased,and the voltage shift is effectively suppressed Besides,the mechanism of MPA process is discussed in terms of the thermal effect and reactant species.X-ray photoelectron spectroscopy(XPS)results unveil oxygen plasma plays the main *** plasma power during the MPA process results in defect repairs of the firstneighbor Al-O bonding and partial removal of Al-O-H bond from the interface *** study demonstrates that MPA process is an effective option to realize highquality dielectric and interface on SiC.

关键词： Silicon carbide Al_(2)O_(3) Metal-oxide-semiconductor Microwave plasma annealing defect repairs X-ray photoelectron spectroscopy

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Positive Bias Temperature Instability degradation of Buried InGaAs Channel nMOSFETs with InGaP Barrier Layer and Al2O3 dielectric

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Chinese Physics Letters 2017年第5期34卷 101-105页

作者：王盛凯马磊常虎东孙兵苏玉玉钟乐李海鸥金智刘新宇刘洪刚 Key Laboratory of Microelectronics Devices & Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing 100029 High-Frequency High-Voltage Device and Integrated Circuits R&D Center Institute of Microelectronics Chinese Academy of Sciences Beijing 100029 Guangxi Experiment Center of Information Science Guilin University of Electronic Technology Guilin 541004 Microsystem and Terahertz Research Center China Academy of Engineering Physics Chengdu 610200

Positive bias temperature instability stress induced interface trap density in a buried InGaAs channel metaloxide-semiconductor field-effect transistor with a InCaP barrier layer and Al2O3 dielectric is investigated. Well behaved split C-V characteristics with small capacitance frequency dispersion are confirmed after the insertion of the InCaP barrier layer. The direct-current Id-Vg measurements show both degradations of positive gate voltage shift and sub-threshold swing in the sub-threshold region, and degradation of positive △Vg in the oncurrent region. The Id-Vg degradation during the positive bias temperature instability tests is mainly contributed by the generation of near interface acceptor traps under stress. Specifically, the stress induced aeceptor traps contain both permanent and recoverable traps. Compared with surface channel InCaAs devices, stress induced recoverable donor traps are negligible in the buried channel ones.

关键词： InGaAs Positive Bias Temperature Instability degradation of Buried InGaAs Channel nMOSFETs with InGaP Barrier Layer and Al2O3 dielectric MOSFET Al

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re-investigation of SiC/SiO2 interface passivation by nitrogen annealing 11th

Re-investigation of SiC/SiO2 interface passivation by nitrog...

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11th European Conference on Silicon Carbide and related Materials, ECSCrM 2016

作者： Peng, Zhao-Yang Wang, Yi-Yu Shen, Hua-Jun Bai, Yun Tang, Yi-dan Chen, Xi-Ming Li, Cheng-Zhan Liu, Ke-An Liu, Xin-Yu High-Frequency High-Voltage Device and Integrated Circuits R&D Center Institute of Microelectronics of Chinese Academy of Sciences Beijing China Zhuzhou CRRC Times Electric Co. Ltd ZhuZhou China

ISBN: (纸本)9783035710434

Effect of nitrogen annealing on SiC/SiO2 interface properties was comparatively investigated for SiC MOS capacitors. Interface properties were characterized by normalized parallel conductance and interface state density value, and dielectric strength was evaluated by the electric-field-to-breakdown (Ebd). The results exhibited that both fast and slow states were present at the nitrogen-annealed samples’ parallel conductance characteristics. Thus, we could conclude that nitrogen annealing led to incomplete nitridation of SiC/SiO2 interface. Based on the results, nitridation mechanism was simply analyzed. It seemed that the nitridation process started from near conduction band, extending till to mid-band-gap. Besides, when the samples underwent higher temperature nitrogen annealing, more slow states were converted into fast ones, indicating that higher annealing temperature could lead to more effective nitridation. It was suggested that nitrogen annealing resulted in incomplete nitridation of SiC/SiO2 interface regardless of oxide thickness and that this process was limited to the annealing temperature. The higher the annealing temperature was, the more effective the nitridation effects were. © 2017 Trans Tech Publications, Switzerland.

关键词： Silicon carbide

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A Combined Wafer Bonding Method using Spin-coated Water Glass Adhesive Layer and Spot Pressing Bonding Technique 13

A Combined Wafer Bonding Method using Spin-coated Water Glas...

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2016 13th IEEE International Conference on Solid-State and integrated Circuit Technology (ICSICT)

作者： Yang Xu Shengkai Wang Yinghui Wang dapeng Chen Honggang Liu Key Laboratory of Microelectronics Devices & Integrated Technology Institute of Micro Electronics of the Chinese Academy of Sciences Smart Sensing R&D Centre Institute of Micro Electronics of the Chinese Academy of Sciences High-Frequency High-Voltage Device and Integrated Circuits R&D Center Institute of Micro Electronics of the Chinese Academy of Sciences

A combined wafer bonding method consist of spot pressing bonding technique and water glass adhesive layer is proposed. The mechanism of water glass bonding is investigated, and the two major factors in this bonding me... 详细信息

ISBN: (纸本)9781467397209

关键词： wafer bonding water glass Spot Pressing Bonding surface energy voids formation

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