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Persistent luminescence encoding for rapid and accurate oral-derived bacteria identification

Chinese Chemical Letters 2025年第1期36卷 459-463页

作者： Chaohui Zheng Jing Xi Shiyi Long Tianpei He Rui Zhao Xinyuan Luo Na Chen Quan Yuan The Second Affiliated Hospital of Fujian Medical University Quanzhou 362000China Renmin Hospital of Wuhan University College of Chemistry and Molecular SciencesInstitute of Molecular MedicineSchool of MicroelectronicsWuhan UniversityWuhan 430072China Molecular Science and Biomedicine Laboratory(MBL) State Key Laboratory of Chemo/Biosensing and Chemometrics College of Chemistry and Chemical EngineeringHunan UniversityChangsha 410082China

The dysbiosis of oral microbiota contributes to diseases such as periodontitis and certain cancers by triggering the host inflammatory *** methods for the immediate and sensitive identification of oral microorganism is crucial for the rapid diagnosis and early interventions of associated *** methods for microbial detection primarily include the plate culturing,polymerase chain reaction and enzyme-linked immunosorbent assay,which are either time-consuming or ***,we reported a persistent luminescence-encoded multiple-channel optical sensing array and achieved the rapid and accurate identification of oral-derived *** results demonstrate that electrostatic attractions and hydrophobic-hydrophobic interactions dominate the binding of the persistent luminescent nanoprobes to oral microorganisms and the microbial identification process can be finished within 30 ***,a total of 7 oral-derived microorganisms demonstrate their own response patterns and were differentiated by linear discriminant analysis(LDA)with the accuracy up to 100%both in the solution and artificial saliva ***,the persistent luminescence encoded array sensor could also discern the microorganism mixtures with the accuracy up to 100%.The proposed persistent luminescence encoding sensor arrays in this work might offer new ideas for rapid and accurate oralderived microorganism detection,and provide new ways for disease diagnosis associated with microbial metabolism.

关键词： Oral microorganisms Persistent luminescent nanoprobes Optical sensing array Fingerprint physicochemical properties Linear discriminant analysis

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Design and application of multi-absorption and highly sensitive monolayer graphene microstructure absorption devices located at terahertz frequencies

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Current Applied Physics 2025年 76卷 16-25页

作者： Guo, Xuncen Tang, Chaojun Yi, Zao Cheng, Shubo Wang, Junqiao Li, Boxun School of Mathematics and Science Southwest University of Science and Technology Mianyang621010 China College of Physics Zhejiang University of Technology Hangzhou310023 China Joint Laboratory for Extreme Conditions Matter Properties Southwest University of Science and Technology Mianyang621010 China School of Chemistry and Chemical Engineering Jishou University Jishou416000 China School of Physics and Optoelectronic Engineering Yangtze University Hubei Jingzhou434023 China School of Physics Zhengzhou University Zhengzhou450001 China School of Physics and Optoelectronics Xiangtan University Xiangtan411105 China Hunan Engineering Laboratory for Microelectronics Optoelectronics and System on A Chip Hunan Xiangtan411105 China

A graphene absorber has been designed in this message that is based on surface plasmon resonance (SPR). The absorber exhibits four perfect absorption peaks within the target frequency band, featuring an innovative structure with excellent tunability and incident-angle insensitivity. The absorber features a triple-layered framework, with a gold (Au) substrate as the bottom layer, a silica (SiO2) layer serving as the medium layer in the middle, and a graphene layer in a "#" symbol shape at the top. The absorber has a simple structure and is easy to fabricate. We then analyzed four variant that the absorber displays peak absorption efficiencies of 99.99 %, 99.32 %, 99.71 %, and 99.99 % when the frequencies are 7.5005 THz, 9.0920 THz, 10.1181 THz, and 11.3193 THz, respectively, all exceeding 99 %, demonstrating excellent absorption performance. Additionally, we set up four electric field monitors to plot the electric field energy distribution maps for the four absorption peaks. We then analyzed four variant structures derived from the original design, comparing the number of absorption peaks, absorption rates, and sensitivity, and concluded that the model structure proposed in this study is optimal. After changing Fermi degree and time of relaxation, adjustment of the waves can be realized. The absorber demonstrates insensitivity to the angle as the incidence angle is changed from 0° to 60°. Furthermore, with the change of environmental refractive index, the maximum sensitivity among peaks can reach 3586 THz/RIU, showcasing high sensitivity. Finally, we calculated the figure of merit (FOM) and quality factor (Q) values for our model, which we compared with those of other absorbers, concluding that our absorber performs exceptionally well in terms of FOM and Q values. Given these advantages, the absorber designed in this paper can be used in fields of sensors etc. © 2025 Korean Physical Society

关键词： Surface plasmon resonance

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Understanding the role of dislocation defects of GaN HEMT under short-circuit stress through transient thermal characterization

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IEEE Transactions on Power Electronics 2025年第8期40卷 11314-11325页

作者： Jiang, Xi Wu, Yue Yuan, Song Li, Xiangdong Yan, Zhaoheng Chen, Jing Jiang, Tao Zhang, Shijie Gong, Xiaowu Niu, Hao Wang, Jun Guangzhou Institute of Technology Xidian University Guangzhou510555 China Key Laboratory of Wide Bandgap Semiconductor Materials and Devices School of Microelectronics Xidian University Xi’an710071 China Fifth Electronics Research Institute of the Ministry of Industry and Information Technology Guangzhou510610 China College of Electrical and Information Engineering Hunan University Changsha410082 China

GaN HEMT devices are prone to rapid failure after repetitive short-circuit (SC) stress under high bus voltage conditions. The dislocation defects at the substrate interface play a critical role in inducing device degradation and thermal breakdown failure. However, the mechanisms of dislocation defect formation under SC stress and their influence on the SC capability of GaN HEMTs remain unclear. This paper presents a novel method based on transient thermal resistance characterization to monitor the evolution of dislocation defects within GaN HEMT devices. Meanwhile, a thermal model is developed to illustrate the influence of dislocation defects on the thermal characteristics of the device. By analyzing the structure function of the GaN HEMT before and after SC stress, the accumulation of previously imperceptible defects is translated into observable changes in thermal resistance curves. The degradation of thermal characteristics of GaN HEMT devices under varying bus voltages and SC pulse durations are investigated. Experimental results demonstrate that the transient thermal characterization method effectively identifies regions of dislocation defect accumulation, quantifies the extent of defect accumulation, and provides a comprehensive understanding of damage evolution within GaN HEMTs under repetitive SC stress. © 1986-2012 IEEE.

关键词： Gallium nitride

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Designing Janus CrSSe/SiC heterojunction for efficient direct Z-scheme overall water splitting: A first-principles study

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International Journal of Hydrogen Energy 2025年 135卷 246-256页

作者： Huang, Xin Ding, Kebing Zhang, Kaige Xie, Yue Chen, Wei Meng, Zhaoshun Xu, Yi Weng, Yakui Wang, Yunhui Yang, Zhihong New Energy Technology Engineering Laboratory of Jiangsu Province Information Physics Research Center College of Science Nanjing University of Posts and Telecommunications Nanjing210023 China College of Electronic and Optical Engineering & College of Microelectronics Nanjing University of Posts and Telecommunications Nanjing210023 China Huaneng Hunan Yueyang Power Generation Co. Ltd. Yueyang414000 China

The two-dimensional direct Z-scheme heterojunction, utilizing two semiconductors with staggered band alignment, enables strong redox capability and broad light absorption, making it attractive for solar-driven water splitting. However, the interfacial recombination of photogenerated carrier remains a major challenge. To address this, we propose a dipole-engineered Z-scheme heterojunction that utilizes the intrinsic dipole-induced electric field (Edipole) of Janus materials and the interfacial electric field (Einter) to spatially separate electrons and holes. By rationally designing the synergistic effect of these dual fields, we constructed a Janus CrSSe/SiC heterojunction with a Se–SiC interface, aligning the Edipole and Einter in a consistent direction. First-principles calculations reveal that the CrSSe/SiC heterojunction exhibits staggered band alignments and facilitates carriers transfer through a direct Z-scheme mechanism. Moreover, the heterojunction possesses a direct optimal bandgap of 1.14 eV, resulting in a broad absorption spectrum across the infrared-visible-ultraviolet light ranges with a high magnitude of 105 cm−1. Importantly, CrSSe/SiC heterojunction demonstrates strong chemical driving forces for spontaneous hydrogen and oxygen evolution reactions in neutral water under solar irradiation, achieving an ultra-high solar-to-hydrogen efficiency of 42.2 %. Additionally, applying tensile strain further enhances the light absorption coefficient. These findings highlight the great potential of CrSSe/SiC heterojunction for efficient photocatalytic water splitting. © 2025 Hydrogen Energy Publications LLC

关键词： Silicon carbide

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Piezovalley effect and magnetovalley coupling in altermagnetic semiconductors studied by first-principles calculations

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Physical Review B 2025年第13期111卷 134429-134429页

作者： Weifeng Xie Xiong Xu Yunliang Yue Huayan Xia Hui Wang School of Microelectronics and Physics Hunan University of Technology and Business Changsha 410205 China School of Physics Hunan Key Laboratory of Super Microstructure and Ultrafast Process Hunan Key Laboratory of Nanophotonics and Devices State Key Laboratory of Powder Metallurgy Central South University Changsha 410083 China College of Information Engineering Yangzhou University Yangzhou 225127 China

Clarifying the physical origin of valley polarization and exploring promising ferrovalley materials are conducive to the application of valley degrees of freedom in the field of information storage. Here, we explore two altermagnetic semiconductors (monolayers Nb2Se2O and Nb2SeTeO) with Néel temperature above room temperature based on first-principles calculations. We find that uniaxial strain induces valley polarization without spin-orbital coupling (SOC) in altermagnets owing to the piezovalley effect, while uniaxial compressive strain transforms the intrinsic ferrovalley semiconductor into a semimetal, half metal, and metal. Moreover, moderate biaxial compressive strain renders Janus monolayer Nb2SeTeO to robust Dirac-conelike band dispersion. The SOC and intrinsic in-plane magnetocrystalline anisotropy energy induce Dirac-conelike altermagnets to generate apparent valley polarization through magnetovalley coupling. In terms of SOC perturbation, we elucidate the physical mechanism behind in-plane magnetization-induced valley polarization and demonstrate that valley polarization is negatively correlated with the band gap. The present work reveals the physical origin of valley polarization in altermagnets and expands the application of ferrovalley at room temperature in valleytronics.

关键词： Degrees of freedom (mechanics)

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Detection of Non-Ferromagnetic Metal Balls Based on the Analytical Solution of Motion-Induced Eddy-Current Field

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IEEE Transactions on Instrumentation and Measurement 2025年 74卷

作者： Yan, Shaolin Chen, Xingle Xiangnan University Microelectronics and Optoelectronics Technology Key Laboratory of Hunan Higher Education School of Physics and Electronic Electrical Engineering Chenzhou423000 China Beihang University School of Automation Science and Electrical Engineering Beijing100191 China

The rapid real-time detection and sorting of moving non-ferromagnetic metals in enclosed or hazardous environments enable the efficient reuse of metal resources, serving as a critical component in industrial production. In this article, copper, aluminum, and brass balls are selected as the typical non-ferromagnetic metal specimens, and a novel rapid detection and sorting method for moving metal objects is proposed based on the analytical solution of motion-induced eddy-current field. First, the peak value of induced voltage with integral form is obtained, which indicates that the peak value is proportional to the product of conductivity and the square of moving speed. Subsequently, different non-ferromagnetic metal balls are adopted to move in the dc coil magnetic field, with the forms of single or discrete, tangent, and different radii. The experiments show that the moving metal balls can be effectively distinguished by the peak values of induced voltage, and the relative errors are within 15%. Finally, based on the approximate linear relationships between the peak voltage and the radii of moving metal balls when taking the double logarithm, the radii can be directly calculated by the peak values, slope, intercept, and without numerical inversion. Compared with the conventional eddy current methods for stationary conductors, the analytical method proposed in this article is intuitive in form, easy to operate, and without inversion calculation, which can be used for the online and real-time detection of non-ferromagnetic moving metal balls with different moving speeds, conductivity values, and radii. © 1963-2012 IEEE.

关键词： Ferromagnetic materials

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High sensitivity and ultra-narrowband perfect metamaterial absorber based on graphene metasurface

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European Physical Journal Plus 2025年第5期140卷 416-416页

作者： Zeng, Yingxing Li, Boxun Zeng, LiLi Zhong, Genxiang Shao, Zhengzheng Xu, Haiqing Liu, Mingliang Chen, Zhiguo Dai, Chengjian School of Physics and Optoelectronics Xiangtan University Xiangtan 411105 China New Energy Institute Hunan Vocational Institute of Technology Xiangtan 411104 China Hunan Engineering Laboratory for Microelectronics Optoelectronics and System on A Chip Xiangtan Hunan 411105 China School of Physics Central South University Changsha 410083 China School of Computational Science and Electronics Hunan Institute of Engineering Xiangtan 411104 China

In this paper, high-quality-factor, high-sensitivity dual-narrowband absorption can be achieved via Fabry–Perot resonance. Quantitative research is performed to assess the impact of monolayer graphene on plasmon resonance absorption. The absorption rates corresponding to the frequencies of f₁ = 26.73995 THz and f₂ = 26.75145 THz, as demonstrated by the results, are 99.72 and 99.64%, respectively. The proposed structure exhibits two ultra-narrow absorption bands with a remarkably small frequency interval (∆f ≈ 11.5 GHz). The absorber functions as a sensitive refractive index detector with high sensitivity and high-quality factors of 11383.59 and 4.2857 THz/RIU. Uniquely, the absorber combines ultrahigh sensitivity (S₂ = 4.2857THz/RIU) and record-breaking quality factors (Q > 11,000), significantly surpassing prior designs. Polarization-insensitive absorption is ensured by the symmetric C4 configuration, while dynamic tunability is demonstrated via Fermi-level modulation (0.4 eV ≤ E_f ≤ 1.0 eV), enabling active spectral shifting of resonance peaks without compromising absorption efficiency. These advancements, supported by coupled-mode theory and full-wave simulations, establish the device as a versatile platform for high-precision refractive index sensing, optical switching, and multifunctional mid-infrared photonic systems. The high Q-factor and high sensitivity of the design make it possible for the absorber to be used in optical detectors and mid-infrared refractive index sensors. © The Author(s), under exclusive licence to Società Italiana di Fisica and Springer-Verlag GmbH Germany, part of Springer Nature 2025.

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Novel LDNMOS embedded SCR with strong ESD robustness based on 0.5 μm 18 V CDMOS technology

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Journal of Central South University 2015年第2期22卷 552-559页

作者：汪洋金湘亮周阿铖 Faculty of Materials Optoelectronics and Physics Xiangtan University Hunan Engineering Laboratory for Microelectronics Optoelectronics and System on a Chip

A novel LDNMOS embedded silicon controlled rectifier(SCR) was proposed to enhance ESD robustness of high-voltage(HV) LDNMOS based on a 0.5 μm 18 V CDMOS process. A two-dimensional(2D) device simulation and a transmission line pulse(TLP) testing were used to analyze the working mechanism and ESD performance of the novel device. Compared with the traditional GG-LDNMOS, the secondary breakdown current(It2) of the proposed device can successfully increase from 1.146 A to 3.169 A with a total width of 50 μm, and ESD current discharge efficiency is improved from 0.459 m A/μm2 to 1.884 m A/μm2. Moreover, due to their different turn-on resistances(Ron), the device with smaller channel length(L) owns a stronger ESD robustness per unit area.

关键词： LDNMOS embedded SCR TCAD simulation electrostatic discharge（ESD） robustness transmission line pulse（TLP）

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Design and Optimization of a Low-Noise Voltage Reference Using Chopper Stabilization Technique

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Chinese Journal of Electronics 2017年第5期26卷 981-985页

作者： PENG Lingjie JIN Xiangliang LIU Mengliang School of Physics and Optoelectronics Xiangtan University Hunan Engineering Laboratory for Microelectronics Optoelectronics and System on a Chip

A low-noise voltage reference is presented to enhance resolution of MEMS capacitive accelerometer and reduce system noise,in which the circuit uses Chopper stabilization(CHS) technique for the suppression of low-frequency noise.A 3.7V voltage reference chip is fabricated in a 0.5-μm CMOS *** with the voltage reference without using CHS,the proposed design is much more superior in low-noise *** results indicate that the output noise of reference voltage V RP can reach 0.121μV/sqrt(Hz) at the vicinity of 3 Hz.

关键词： Voltage reference Low noise Chopper stabilization Amplifier

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Geometry engineering of tunneling transistors in transition metal dichalcogenide nanoribbon heterojunctions

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Communications Physics 2025年第1期8卷 1-9页

作者： Jiang, Ye Dan, Minjiang Fan, Shuaiwei Hu, Gongwei Huang, Fobao Wang, Wei-Yang Chen, Qiao School of Computational Science and Electronics The lnnovation Institute of Advanced Functional Materials Hunan Institute of Engineering Xiangtan China Joint Laboratory for Extreme Conditions Matter Properties School of Mathematics and Physics Southwest University of Science and Technology Mianyang China Hubei Engineering Research Center of Weak Magnetic-field Detection College of Science China Three Gorges University Yichang China School of Microelectronics Northwestern Polytechnical University Xi’an China Shangrao Open University Jiangxi Shangrao China

Graphene nanoribbon heterojunctions are promising one-dimensional materials for quantum electronics due to their tunable bandgap and sizable quantum confinement. However, their band alignment is significantly influenced by dimensional fluctuations, impeding the development of stable and reliable devices. Here, we engineer geometry edges of transition metal dichalcogenide (TMD) nanoribbons to design versatile nanoribbon heterojunctions by combining metallic zigzag and semiconducting armchair edges. T- and H-shaped nanoribbons exhibit robust edge-state transport for tunneling and resonant tunneling, respectively. The quantized subbands confined within H-shaped nanoribbon are modulated by zigzag edges. In contrast, T-shaped configuration shows different tunneling for electrons and holes, which are tunable via armchair edges. Moreover, the device characteristics suggest that tunneling transistors display moderate current dependence on the barrier width, while resonant tunneling transistors exhibit negative differential resistance with peak-valley ratio improved by lengthening armchair edge. This study proposes using geometry edge as a degree of freedom to engineer two-dimensional material nanoribbon heterojunctions, with broad potential for quantum electronic and optoelectronic applications. (Figure presented.) © The Author(s) 2025.

关键词： Quantum electronics

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