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检索条件"机构=Hunan Engineering Laboratory for Microelectronics"
137 条 记 录,以下是1-10 订阅
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Persistent luminescence encoding for rapid and accurate oral-derived bacteria identification
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Chinese Chemical Letters 2025年 第1期36卷 459-463页
作者: Chaohui Zheng Jing Xi Shiyi Long Tianpei He Rui Zhao Xinyuan Luo Na Chen Quan Yuan The Second Affiliated Hospital of Fujian Medical University Quanzhou 362000China Renmin Hospital of Wuhan University College of Chemistry and Molecular SciencesInstitute of Molecular MedicineSchool of MicroelectronicsWuhan UniversityWuhan 430072China Molecular Science and Biomedicine Laboratory(MBL) State Key Laboratory of Chemo/Biosensing and Chemometrics College of Chemistry and Chemical EngineeringHunan UniversityChangsha 410082China
The dysbiosis of oral microbiota contributes to diseases such as periodontitis and certain cancers by triggering the host inflammatory *** methods for the immediate and sensitive identification of oral microorganism i... 详细信息
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Design and application of multi-absorption and highly sensitive monolayer graphene microstructure absorption devices located at terahertz frequencies
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Current Applied Physics 2025年 76卷 16-25页
作者: Guo, Xuncen Tang, Chaojun Yi, Zao Cheng, Shubo Wang, Junqiao Li, Boxun School of Mathematics and Science Southwest University of Science and Technology Mianyang621010 China College of Physics Zhejiang University of Technology Hangzhou310023 China Joint Laboratory for Extreme Conditions Matter Properties Southwest University of Science and Technology Mianyang621010 China School of Chemistry and Chemical Engineering Jishou University Jishou416000 China School of Physics and Optoelectronic Engineering Yangtze University Hubei Jingzhou434023 China School of Physics Zhengzhou University Zhengzhou450001 China School of Physics and Optoelectronics Xiangtan University Xiangtan411105 China Hunan Engineering Laboratory for Microelectronics Optoelectronics and System on A Chip Hunan Xiangtan411105 China
A graphene absorber has been designed in this message that is based on surface plasmon resonance (SPR). The absorber exhibits four perfect absorption peaks within the target frequency band, featuring an innovative str... 详细信息
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Understanding the role of dislocation defects of GaN HEMT under short-circuit stress through transient thermal characterization
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IEEE Transactions on Power Electronics 2025年 第8期40卷 11314-11325页
作者: Jiang, Xi Wu, Yue Yuan, Song Li, Xiangdong Yan, Zhaoheng Chen, Jing Jiang, Tao Zhang, Shijie Gong, Xiaowu Niu, Hao Wang, Jun Guangzhou Institute of Technology Xidian University Guangzhou510555 China Key Laboratory of Wide Bandgap Semiconductor Materials and Devices School of Microelectronics Xidian University Xi’an710071 China Fifth Electronics Research Institute of the Ministry of Industry and Information Technology Guangzhou510610 China College of Electrical and Information Engineering Hunan University Changsha410082 China
GaN HEMT devices are prone to rapid failure after repetitive short-circuit (SC) stress under high bus voltage conditions. The dislocation defects at the substrate interface play a critical role in inducing device degr... 详细信息
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Piezovalley effect and magnetovalley coupling in altermagnetic semiconductors studied by first-principles calculations
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Physical Review B 2025年 第13期111卷 134429-134429页
作者: Weifeng Xie Xiong Xu Yunliang Yue Huayan Xia Hui Wang School of Microelectronics and Physics Hunan University of Technology and Business Changsha 410205 China School of Physics Hunan Key Laboratory of Super Microstructure and Ultrafast Process Hunan Key Laboratory of Nanophotonics and Devices State Key Laboratory of Powder Metallurgy Central South University Changsha 410083 China College of Information Engineering Yangzhou University Yangzhou 225127 China
Clarifying the physical origin of valley polarization and exploring promising ferrovalley materials are conducive to the application of valley degrees of freedom in the field of information storage. Here, we explore t... 详细信息
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Novel LDNMOS embedded SCR with strong ESD robustness based on 0.5 μm 18 V CDMOS technology
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Journal of Central South University 2015年 第2期22卷 552-559页
作者: 汪洋 金湘亮 周阿铖 Faculty of Materials Optoelectronics and Physics Xiangtan University Hunan Engineering Laboratory for Microelectronics Optoelectronics and System on a Chip
A novel LDNMOS embedded silicon controlled rectifier(SCR) was proposed to enhance ESD robustness of high-voltage(HV) LDNMOS based on a 0.5 μm 18 V CDMOS process. A two-dimensional(2D) device simulation and a transmis... 详细信息
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Design and Optimization of a Low-Noise Voltage Reference Using Chopper Stabilization Technique
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Chinese Journal of Electronics 2017年 第5期26卷 981-985页
作者: PENG Lingjie JIN Xiangliang LIU Mengliang School of Physics and Optoelectronics Xiangtan University Hunan Engineering Laboratory for Microelectronics Optoelectronics and System on a Chip
A low-noise voltage reference is presented to enhance resolution of MEMS capacitive accelerometer and reduce system noise,in which the circuit uses Chopper stabilization(CHS) technique for the suppression of low-frequ... 详细信息
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engineering of topological tunneling transistors via quantum point contact
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Physical Review Applied 2025年 第3期23卷 034074-034074页
作者: Gongwei Hu Jiaqi Yang Haozhen Chen Min Liu Shuaiwei Fan Fobao Huang Qiao Chen Minjiang Dan Hubei Engineering Research Center of Weak Magnetic-field Detection College of Science China Three Gorges University Yichang 443002 China College of Hydraulic & Environmental Engineering China Three Gorges University Yichang 443002 China School of Microelectronics Northwestern Polytechnical University Xi’an 710072 China Yangtze River Delta Research Institute of NPU Northwestern Polytechnical University Taicang 215400 China School of Computational Science and Electronics the lnnovation Institute of Advanced Functional Materials Hunan Institute of Engineering Xiangtan 411104 China Joint Laboratory for Extreme Conditions Matter Properties School of Mathematics and Physics Southwest University of Science and Technology Mianyang 621010 China
Owing to the versatile transport process, tunneling transistors (TTs) have become important building blocks for modern electronic, optoelectronic, and magnetic technologies. Although various TTs have been developed, t... 详细信息
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Second-Order Statistics and Burst Error Analysis of UAV-to-UAV Rician Fading Channels
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IEEE Transactions on Vehicular Technology 2025年
作者: Zeng, Linzhou Liao, Xuewen Zhu, Yunzhe Ma, Zhangfeng Yang, Jingya Peng, Xin Jiangl, Hao Chen, Zhen Hunan Institute of Science and Technology School of Information Science and Engineering Yueyang414006 China Xi'an Jiaotong University School of Information and Communications Engineering Faculty of Electronic and Information Engineering Xi'an710049 China Shaoyang University School of Information Science and Engineering Shaoyang422000 China Henan High-Speed Railway Operation and Maintenance Engineering Research Center Zhengzhou451460 China Beijing Jiaotong University Beijing Engineering Research Center of High-Speed Railway Broadband Mobile Communications Beijing100044 China Nanjing University of Information Science and Technology School of Artificial Intelligence Nanjing210044 China Southeast University National Mobile Communications Research Laboratory Nanjing210096 China University of Macau Institute of Microelectronics 999078 China
An arbitrary-elevation two-cylinder geometry-based stochastic model is described for non-isotropic scattering UAV-to-UAV (U2U) Rician fading channels, which takes into account the line-of-sight (LoS), the single-bounc... 详细信息
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A novel integrated ultraviolet photodetector based on standard CMOS process
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Chinese Physics B 2015年 第3期24卷 418-422页
作者: 汪涵 金湘亮 陈长平 田满芳 朱柯翰 Faculty of Materials Optoelectronics and PhysicsXiangtan University Hunan Engineering Laboratory for Microelectronics Optoelectronics and System on a Chip Electrical and Computer Engineering Department Boise State University
A novel integrated ultraviolet(UV) photodetector has been proposed, which realizes a high UV selectivity by combining a conventional UV-selective photodiode with an extra infrared(IR) photodiode. The IR photodiode... 详细信息
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Improved two-dimensional responsivity physical model of a CMOS UV and blue-extended photodiode
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Journal of Semiconductors 2014年 第9期35卷 76-82页
作者: 陈长平 田满芳 江震宇 金湘亮 罗均 Faculty of Materials Optoelectronics and Physics Xiangtan University Hunan Engineering Laboratory for Microelectronics Optoelectronics and System on a Chip Department of Precision Mechanical Engineering Shanghai University
A CMOS UV and blue-extended photodiode is presented and fabricated for light detection in the ultraviolet/blue spectral range. An octagon homocentric ring-shaped geometry is used to improve the ultraviolet responsivit... 详细信息
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