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Persistent luminescence encoding for rapid and accurate oral-derived bacteria identification

Chinese Chemical Letters 2025年第1期36卷 459-463页

作者： Chaohui Zheng Jing Xi Shiyi Long Tianpei He Rui Zhao Xinyuan Luo Na Chen Quan Yuan The Second Affiliated Hospital of Fujian Medical University Quanzhou 362000China Renmin Hospital of Wuhan University College of Chemistry and Molecular SciencesInstitute of Molecular MedicineSchool of MicroelectronicsWuhan UniversityWuhan 430072China Molecular Science and Biomedicine Laboratory(MBL) State Key Laboratory of Chemo/Biosensing and Chemometrics College of Chemistry and Chemical EngineeringHunan UniversityChangsha 410082China

The dysbiosis of oral microbiota contributes to diseases such as periodontitis and certain cancers by triggering the host inflammatory *** methods for the immediate and sensitive identification of oral microorganism is crucial for the rapid diagnosis and early interventions of associated *** methods for microbial detection primarily include the plate culturing,polymerase chain reaction and enzyme-linked immunosorbent assay,which are either time-consuming or ***,we reported a persistent luminescence-encoded multiple-channel optical sensing array and achieved the rapid and accurate identification of oral-derived *** results demonstrate that electrostatic attractions and hydrophobic-hydrophobic interactions dominate the binding of the persistent luminescent nanoprobes to oral microorganisms and the microbial identification process can be finished within 30 ***,a total of 7 oral-derived microorganisms demonstrate their own response patterns and were differentiated by linear discriminant analysis(LDA)with the accuracy up to 100%both in the solution and artificial saliva ***,the persistent luminescence encoded array sensor could also discern the microorganism mixtures with the accuracy up to 100%.The proposed persistent luminescence encoding sensor arrays in this work might offer new ideas for rapid and accurate oralderived microorganism detection,and provide new ways for disease diagnosis associated with microbial metabolism.

关键词： Oral microorganisms Persistent luminescent nanoprobes Optical sensing array Fingerprint physicochemical properties Linear discriminant analysis

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Design and application of multi-absorption and highly sensitive monolayer graphene microstructure absorption devices located at terahertz frequencies

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Current Applied Physics 2025年 76卷 16-25页

作者： Guo, Xuncen Tang, Chaojun Yi, Zao Cheng, Shubo Wang, Junqiao Li, Boxun School of Mathematics and Science Southwest University of Science and Technology Mianyang621010 China College of Physics Zhejiang University of Technology Hangzhou310023 China Joint Laboratory for Extreme Conditions Matter Properties Southwest University of Science and Technology Mianyang621010 China School of Chemistry and Chemical Engineering Jishou University Jishou416000 China School of Physics and Optoelectronic Engineering Yangtze University Hubei Jingzhou434023 China School of Physics Zhengzhou University Zhengzhou450001 China School of Physics and Optoelectronics Xiangtan University Xiangtan411105 China Hunan Engineering Laboratory for Microelectronics Optoelectronics and System on A Chip Hunan Xiangtan411105 China

A graphene absorber has been designed in this message that is based on surface plasmon resonance (SPR). The absorber exhibits four perfect absorption peaks within the target frequency band, featuring an innovative structure with excellent tunability and incident-angle insensitivity. The absorber features a triple-layered framework, with a gold (Au) substrate as the bottom layer, a silica (SiO2) layer serving as the medium layer in the middle, and a graphene layer in a "#" symbol shape at the top. The absorber has a simple structure and is easy to fabricate. We then analyzed four variant that the absorber displays peak absorption efficiencies of 99.99 %, 99.32 %, 99.71 %, and 99.99 % when the frequencies are 7.5005 THz, 9.0920 THz, 10.1181 THz, and 11.3193 THz, respectively, all exceeding 99 %, demonstrating excellent absorption performance. Additionally, we set up four electric field monitors to plot the electric field energy distribution maps for the four absorption peaks. We then analyzed four variant structures derived from the original design, comparing the number of absorption peaks, absorption rates, and sensitivity, and concluded that the model structure proposed in this study is optimal. After changing Fermi degree and time of relaxation, adjustment of the waves can be realized. The absorber demonstrates insensitivity to the angle as the incidence angle is changed from 0° to 60°. Furthermore, with the change of environmental refractive index, the maximum sensitivity among peaks can reach 3586 THz/RIU, showcasing high sensitivity. Finally, we calculated the figure of merit (FOM) and quality factor (Q) values for our model, which we compared with those of other absorbers, concluding that our absorber performs exceptionally well in terms of FOM and Q values. Given these advantages, the absorber designed in this paper can be used in fields of sensors etc. © 2025 Korean Physical Society

关键词： Surface plasmon resonance

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Understanding the role of dislocation defects of GaN HEMT under short-circuit stress through transient thermal characterization

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IEEE Transactions on Power Electronics 2025年第8期40卷 11314-11325页

作者： Jiang, Xi Wu, Yue Yuan, Song Li, Xiangdong Yan, Zhaoheng Chen, Jing Jiang, Tao Zhang, Shijie Gong, Xiaowu Niu, Hao Wang, Jun Guangzhou Institute of Technology Xidian University Guangzhou510555 China Key Laboratory of Wide Bandgap Semiconductor Materials and Devices School of Microelectronics Xidian University Xi’an710071 China Fifth Electronics Research Institute of the Ministry of Industry and Information Technology Guangzhou510610 China College of Electrical and Information Engineering Hunan University Changsha410082 China

GaN HEMT devices are prone to rapid failure after repetitive short-circuit (SC) stress under high bus voltage conditions. The dislocation defects at the substrate interface play a critical role in inducing device degradation and thermal breakdown failure. However, the mechanisms of dislocation defect formation under SC stress and their influence on the SC capability of GaN HEMTs remain unclear. This paper presents a novel method based on transient thermal resistance characterization to monitor the evolution of dislocation defects within GaN HEMT devices. Meanwhile, a thermal model is developed to illustrate the influence of dislocation defects on the thermal characteristics of the device. By analyzing the structure function of the GaN HEMT before and after SC stress, the accumulation of previously imperceptible defects is translated into observable changes in thermal resistance curves. The degradation of thermal characteristics of GaN HEMT devices under varying bus voltages and SC pulse durations are investigated. Experimental results demonstrate that the transient thermal characterization method effectively identifies regions of dislocation defect accumulation, quantifies the extent of defect accumulation, and provides a comprehensive understanding of damage evolution within GaN HEMTs under repetitive SC stress. © 1986-2012 IEEE.

关键词： Gallium nitride

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Piezovalley effect and magnetovalley coupling in altermagnetic semiconductors studied by first-principles calculations

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Physical Review B 2025年第13期111卷 134429-134429页

作者： Weifeng Xie Xiong Xu Yunliang Yue Huayan Xia Hui Wang School of Microelectronics and Physics Hunan University of Technology and Business Changsha 410205 China School of Physics Hunan Key Laboratory of Super Microstructure and Ultrafast Process Hunan Key Laboratory of Nanophotonics and Devices State Key Laboratory of Powder Metallurgy Central South University Changsha 410083 China College of Information Engineering Yangzhou University Yangzhou 225127 China

Clarifying the physical origin of valley polarization and exploring promising ferrovalley materials are conducive to the application of valley degrees of freedom in the field of information storage. Here, we explore two altermagnetic semiconductors (monolayers Nb2Se2O and Nb2SeTeO) with Néel temperature above room temperature based on first-principles calculations. We find that uniaxial strain induces valley polarization without spin-orbital coupling (SOC) in altermagnets owing to the piezovalley effect, while uniaxial compressive strain transforms the intrinsic ferrovalley semiconductor into a semimetal, half metal, and metal. Moreover, moderate biaxial compressive strain renders Janus monolayer Nb2SeTeO to robust Dirac-conelike band dispersion. The SOC and intrinsic in-plane magnetocrystalline anisotropy energy induce Dirac-conelike altermagnets to generate apparent valley polarization through magnetovalley coupling. In terms of SOC perturbation, we elucidate the physical mechanism behind in-plane magnetization-induced valley polarization and demonstrate that valley polarization is negatively correlated with the band gap. The present work reveals the physical origin of valley polarization in altermagnets and expands the application of ferrovalley at room temperature in valleytronics.

关键词： Degrees of freedom (mechanics)

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Novel LDNMOS embedded SCR with strong ESD robustness based on 0.5 μm 18 V CDMOS technology

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Journal of Central South University 2015年第2期22卷 552-559页

作者：汪洋金湘亮周阿铖 Faculty of Materials Optoelectronics and Physics Xiangtan University Hunan Engineering Laboratory for Microelectronics Optoelectronics and System on a Chip

A novel LDNMOS embedded silicon controlled rectifier(SCR) was proposed to enhance ESD robustness of high-voltage(HV) LDNMOS based on a 0.5 μm 18 V CDMOS process. A two-dimensional(2D) device simulation and a transmission line pulse(TLP) testing were used to analyze the working mechanism and ESD performance of the novel device. Compared with the traditional GG-LDNMOS, the secondary breakdown current(It2) of the proposed device can successfully increase from 1.146 A to 3.169 A with a total width of 50 μm, and ESD current discharge efficiency is improved from 0.459 m A/μm2 to 1.884 m A/μm2. Moreover, due to their different turn-on resistances(Ron), the device with smaller channel length(L) owns a stronger ESD robustness per unit area.

关键词： LDNMOS embedded SCR TCAD simulation electrostatic discharge（ESD） robustness transmission line pulse（TLP）

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Design and Optimization of a Low-Noise Voltage Reference Using Chopper Stabilization Technique

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Chinese Journal of Electronics 2017年第5期26卷 981-985页

作者： PENG Lingjie JIN Xiangliang LIU Mengliang School of Physics and Optoelectronics Xiangtan University Hunan Engineering Laboratory for Microelectronics Optoelectronics and System on a Chip

A low-noise voltage reference is presented to enhance resolution of MEMS capacitive accelerometer and reduce system noise,in which the circuit uses Chopper stabilization(CHS) technique for the suppression of low-frequency noise.A 3.7V voltage reference chip is fabricated in a 0.5-μm CMOS *** with the voltage reference without using CHS,the proposed design is much more superior in low-noise *** results indicate that the output noise of reference voltage V RP can reach 0.121μV/sqrt(Hz) at the vicinity of 3 Hz.

关键词： Voltage reference Low noise Chopper stabilization Amplifier

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engineering of topological tunneling transistors via quantum point contact

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Physical Review Applied 2025年第3期23卷 034074-034074页

作者： Gongwei Hu Jiaqi Yang Haozhen Chen Min Liu Shuaiwei Fan Fobao Huang Qiao Chen Minjiang Dan Hubei Engineering Research Center of Weak Magnetic-field Detection College of Science China Three Gorges University Yichang 443002 China College of Hydraulic & Environmental Engineering China Three Gorges University Yichang 443002 China School of Microelectronics Northwestern Polytechnical University Xi’an 710072 China Yangtze River Delta Research Institute of NPU Northwestern Polytechnical University Taicang 215400 China School of Computational Science and Electronics the lnnovation Institute of Advanced Functional Materials Hunan Institute of Engineering Xiangtan 411104 China Joint Laboratory for Extreme Conditions Matter Properties School of Mathematics and Physics Southwest University of Science and Technology Mianyang 621010 China

Owing to the versatile transport process, tunneling transistors (TTs) have become important building blocks for modern electronic, optoelectronic, and magnetic technologies. Although various TTs have been developed, their device operation still has challenges in terms of stability and reliability due to the tunneling process being susceptible to material size and interface scatterings. The robust edge channels in a topological insulator (TI) hold novel tunneling physics, but their TTs are still lacking. In this theoretical work, we propose topological tunneling and resonant TTs by using edge states (ESs) as transport channels in the quantum point contact (QPC) constriction. The finite size effect is the key to adjusting the band structure and tunneling barrier height of ESs by controlling the QPC width. By using the Bernevig-Hughes-Zhang (BHZ) model, we explore the single-QPC tunneling and double-QPC resonant tunneling transport, as well as their device characteristics via the quantum transport Kwant package. Topological TTs based on a single QPC possess excellent gate-modulated capability as well as a size-dependent current sensitivity of 0.1nm−1, several orders of magnitude lower than the conventional TTs. The transport results show that the tunneling probability is significantly influenced by the QPC width (barrier height) but is weakly dependent on the QPC length (barrier width). Moreover, topological resonant TTs are designed in a double-QPC structure and show a negative differential resistance with a large peak-valley current ratio (>104). The transmission spectrum exhibits multiple peaks due to the resonant tunneling driven by quantum well states. The distance between two QPCs can shift these resonant peaks by modulating the transverse confined effect. This study opens a window for designing stable, reliable, and high-performance tunneling devices via emerging quantum materials with great potential for low-power topological electronics applications.

关键词： Semiconductor quantum wells

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Second-Order Statistics and Burst Error Analysis of UAV-to-UAV Rician Fading Channels

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IEEE Transactions on Vehicular Technology 2025年

作者： Zeng, Linzhou Liao, Xuewen Zhu, Yunzhe Ma, Zhangfeng Yang, Jingya Peng, Xin Jiangl, Hao Chen, Zhen Hunan Institute of Science and Technology School of Information Science and Engineering Yueyang414006 China Xi'an Jiaotong University School of Information and Communications Engineering Faculty of Electronic and Information Engineering Xi'an710049 China Shaoyang University School of Information Science and Engineering Shaoyang422000 China Henan High-Speed Railway Operation and Maintenance Engineering Research Center Zhengzhou451460 China Beijing Jiaotong University Beijing Engineering Research Center of High-Speed Railway Broadband Mobile Communications Beijing100044 China Nanjing University of Information Science and Technology School of Artificial Intelligence Nanjing210044 China Southeast University National Mobile Communications Research Laboratory Nanjing210096 China University of Macau Institute of Microelectronics 999078 China

An arbitrary-elevation two-cylinder geometry-based stochastic model is described for non-isotropic scattering UAV-to-UAV (U2U) Rician fading channels, which takes into account the line-of-sight (LoS), the single-bounced, and the double-bounced rays. The second-order channel statistics are derived from the proposed reference model, including the envelope level crossing rate (LCR) and the average fade duration (AFD). Notably, the key parameters in the LCR are reduced to closed-form, which are shown to be the generalizations of the previously reported ones from the two-ring model. The good agreement between the theoretical and the simulated LCRs/AFDs demonstrates not only the usefulness of the simulation models but also the correctness of the theoretical derivations. Based on those analytical expressions, the impacts of some unique model parameters are studied on the LCR, and the burst error rate of the U2U Rician fading channels is analyzed via the AFD. © 1967-2012 IEEE.

关键词： Stochastic models

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A novel integrated ultraviolet photodetector based on standard CMOS process

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Chinese Physics B 2015年第3期24卷 418-422页

作者：汪涵金湘亮陈长平田满芳朱柯翰 Faculty of Materials Optoelectronics and PhysicsXiangtan University Hunan Engineering Laboratory for Microelectronics Optoelectronics and System on a Chip Electrical and Computer Engineering Department Boise State University

A novel integrated ultraviolet（UV） photodetector has been proposed, which realizes a high UV selectivity by combining a conventional UV-selective photodiode with an extra infrared（IR） photodiode. The IR photodiode is designed for compensating the photocurrent response of the UV photodiode in the infrared band and is 15 times smaller than the UV one. The integrated photodetector has been fabricated in a 0.35 μm standard CMOS technology. Some critical performance indices of this new structure photodetector, such as spectral responsivity, breakdown voltage, quenching waveform, and transient response, are measured and analyzed. Test results show that the complementary UV–IR photodetector has a maximum spectral responsivity of 0.27 A·W-1 at the wavelength of 400 nm. The device has a high UV selectivity of 3000,which is much higher than that of the single UV photodiode.

关键词： ultraviolet photodetector compensating parasitic photocurrent UV selectivity CMOS process

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Improved two-dimensional responsivity physical model of a CMOS UV and blue-extended photodiode

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Journal of Semiconductors 2014年第9期35卷 76-82页

作者：陈长平田满芳江震宇金湘亮罗均 Faculty of Materials Optoelectronics and Physics Xiangtan University Hunan Engineering Laboratory for Microelectronics Optoelectronics and System on a Chip Department of Precision Mechanical Engineering Shanghai University

A CMOS UV and blue-extended photodiode is presented and fabricated for light detection in the ultraviolet/blue spectral range. An octagon homocentric ring-shaped geometry is used to improve the ultraviolet responsivity and suppress edge breakdown. This paper has established a two-dimensional responsivity physical model for the presented photodiode and given some numerical analyses. The dead layer effect, which is caused by the high-doping effects and boron redistribution, is considered when analyzing the distribution of the current of the proposed UV and blue-extended photodiode. In the dead layer, the boron doping profile decreases towards the surface. Simulated results illustrate that the responsivity in the UV range is obviously decreased by the effect of the dead layer, while it is not affected in the visible and near-infrared part of the spectrum. The presented photodiode is fabricated and the silicon tested results are given, which agree well with the simulated ones.

关键词： UV/blue-extended photodiode responsivity physical model dead layer effect CMOS process

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