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arXiv 2025年

作者： Hong, Qian-Qian Dong, Daoyi Henriksen, Niels E. Nori, Franco He, Jun Shu, Chuan-Cun Hunan Key Laboratory of Nanophotonics and Devices Hunan Key Laboratory of Super-Microstructure and Ultrafast Process School of Physics Central South University Changsha410083 China Australian Artificial Intelligence Institute Faculty of Engineering and Information Technology University of Technology SydneyNSW2007 Australia Department of Chemistry Technical University of Denmark Building 207 Kongens LyngbyDK-2800 Denmark Quantum Computing Center Theoretical Quantum Physics Laboratory RIKEN Saitama351-0198 Japan Physics Department University of Michigan Ann ArborMI48109 United States

The lack of a direct map between control fields and desired control objectives poses a significant challenge in applying quantum control theory to quantum technologies. Here, we propose an analytical framework to precisely control a limited set of quantum states and construct desired coherent superpositions using a well-designed laser pulse sequence with optimal amplitudes, phases, and delays. This theoretical framework that corresponds to a multi-level pulse-area theorem establishes a straightforward mapping between the control parameters of the pulse sequence and the amplitudes and phases of rotational states within a specific subspace. As an example, we utilize this approach to generate 15 distinct and desired rotational superpositions of ultracold polar molecules, leading to 15 desired field-free molecular orientations. By optimizing the superposition of the lowest 16 rotational states, we demonstrate that this approach can achieve a maximum orientation value of |〈cos θ〉|max above 0.99, which is very close to the global optimal value of 1 that could be achieved in an infinite-dimensional state space. This work marks a significant advancement in achieving precise control over multi-level subsystems within molecules. It holds potential applications in molecular alignment and orientation, as well as in various interdisciplinary fields related to the precise quantum control of ultracold polar molecules, opening up considerable opportunities in molecular-based quantum techniques. © 2025, CC BY.

关键词： Molecular orientation

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Flexible Electrolyte-Based Devices for Neuromorphic Electronics

IEEE Journal on Flexible Electronics

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IEEE Journal on Flexible Electronics 2024年第1期3卷 29-41页

作者： Song, Honglin Li, Yanran Huang, Zhuohui Zhang, Yi Jiang, Jie Central South University Hunan Key Laboratory of Nanophotonics and Devices Hunan Key Laboratory of Super Microstructure and Ultrafast Process School of Physics Changsha410082 China

It is difficult for traditional digital circuits to gain a foothold in the next generation of artificial intelligence (AI) and Internet of Things (IoT) because the von Neumann architecture faces storage and power consumption walls that are difficult to break through. Fortunately, biologically inspired neuromorphic devices can realize bio-sensing, memory, and computing functions with low power consumption and high energy efficiency, which opens up a new way to break the above technological bottlenecks. Particularly, flexible electrolyte-based neuromorphic devices have significant application potential in the fields of bio-prosthesis, wearable intelligent systems, and brain-computer interface due to their flexible, reconfigurable, and biocompatible characteristics. This article introduces their working mechanisms and recent progresses in artificial neural networks, bionic perception systems, and human-machine interfaces. Finally, the existing problems, challenges, and future directions are discussed. © 2022 IEEE.

关键词： Neural networks

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Giant quartic-phonon decay in PVD-grownα-MoO_(3) flakes

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Nano Research 2023年第1期16卷 1115-1122页

作者： Yongsong Wang Xiao Guo Siwen You Junjie Jiang Zihan Wang Fangping Ouyang Han Huang School of Physics and Electronics Hunan Key Laboratory of Nanophotonics and DevicesCentral South UniversityChangsha 410083China School of Physics and Electronics Hunan Key Laboratory of Super-microstructure and Ultrafast ProcessCentral South UniversityChangsha 410083China

Elementary excitations,such as in-plane anisotropic phonons and phonon polaritons(PhPs),inα-MoO_(3) play key roles in its outstanding physical properties like high carrier mobility and ultralow phonon thermal conductivity().Understanding the excitation mechanisms like phonon–phonon interactions is the most fundamental step to further ***,we report on the systematic Raman investigations on phonon anisotropy and anharmonicity of representative Mo–O stretching vibration phonon modes(SVPMs)in physical vapor deposition(PVD)-grownα-MoO_(3) *** of SVPMs verify the phonon *** abnormal temperature dependence of SVPMs reveals that giant quartic-phonon decay dominates the phonon anharmonicity inα-MoO_(3).An ultrashort phonon lifetime of~0.34 ps gives evidence of theoretically predicted ultralow inα-MoO_(3).Our findings give deep insight into the phonon–phonon interactions inα-MoO_(3) and provide an indicator for its extreme thermal device applications.

关键词： layered materials synthesis phonon-phonon coupling anisotropy ultralow phonon thermal conductivity

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Improving power conversion efficiency of perovskite solar cells by cooperative LSPR of gold-silver dual nanoparticles

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Chinese Physics B 2017年第5期26卷 414-420页

作者：刘鹏杨兵初刘钢吴闰生张楚俊万方李水根阳军亮高永立周聪华 Hunan Key Laboratory of Super Microstructure and Ultrafast Process School of Physics and Electronics Central South University School of New Energy Science and Engineering Xinyu University Department of Physics and Astronomy University of Rochester

Enhancing optical and electrical performances is effective in improving power conversion efficiency of photovoltaic devices. Here, gold and silver dual nanoparticles were imported and embedded in the hole transport layer of perovskite solar cells. Due to the cooperative localized surface plasmon resonance of these two kinds of metal nanostructures, light harvest of perovskite material layer and the electrical performance of device were improved, which finally upgraded short circuit current density by 10.0%, and helped to increase power conversion efficiency from 10.4% to 11.6% under AM 1.5G illumination with intensity of 100 m W/cm;. In addition, we explored the influence of silver and gold nanoparticles on charge carrier generation, dissociation, recombination, and transportation inside perovskite solar cells.

关键词： silver perovskite cooperative photovoltaic recombination PEDOT illumination dissociation plasmon Absorption

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Thin-film growth behavior of non-planar vanadium oxide phthalocyanine

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Chinese Physics B 2019年第8期28卷 369-375页

作者： Tian-Jiao Liu Hua-Yan Xia Biao Liu Mei Fang Jun-Liang Yang Hunan Key Laboratory for Super-microstructure and Ultrafast Process School of Physics and ElectronicsCentral South UniversityChangsha 410083China Department of Chemistry University of WarwickCoventryCV47ALUnited Kinedom

The thin film properties of organic semiconductors are very important to the device ***,non-planar vanadyl phthalocyanine(VOPc)thin films grown on rigid substrates of indium tin oxide,silicon dioxide,and flexible substrate of kapton by organic molecular beam deposition under vacuum conditions are systematically studied via atomic force microscopy and x-ray *** results clearly reveal that the morphology and grain size are strongly dependent on the substrate temperature during the process of film ***,the VOPc films with the structure of phase I or phase II can be modulated via in situ annealing and post-annealing ***,the crystalline structure and molecular orientation of vapor-deposited VOPc can be controlled using molecular template layer 3,4,9,10-perylenetetracarboxylic dianhydride(PTCDA),the VOPc film of which exhibits the phase I *** deep understanding of growth mechanism of non-planar VOPc film provides valuable information for controlling structure-property relationship and accelerates the application in electronic and optoelectronic devices.

关键词： organic semiconductor thin film vanadyl phthalocyanine(VOPc) growth behavior

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Flexible multiterminal photoelectronic neurotransistors based on self‐assembled rubber semiconductors for spatiotemporal information processing

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SmartMat 2023年第2期4卷 78-87页

作者： Yunchao Xu Gengming Zhang Wanrong Liu Chenxing Jin Yiling Nie Jia Sun Junliang Yang Hunan Key Laboratory for Super Microstructure and Ultrafast Process School of Physics and ElectronicsCentral South UniversityChangshaChina Hunan Key Laboratory of Nanophotonics and Devices School of Physics and ElectronicsCentral South UniversityChangshaChina

A significant step toward constructing high‐efficiency neuromorphic systems is the electronic emulation of advanced synaptic functions of the human *** previous studies have focused on mimicking the basic functions of synapses using single‐gate transistors,multigate transistors offer an opportunity to simulate more complex and advanced memory‐forming behaviors in biological *** this study,a simple and general method is used to assemble rubber semiconductors into suspended two‐phase composite films that are transferred to the surface of the ion‐conducting membrane to fabricate flexible multiterminal photoelectronic *** suspended ion conductive film is used as the gate dielectrics and supporting *** prepared devices exhibit excellent electrical stability and mechanical flexibility after being *** photoelectronic synaptic behavior and pulse‐dependent plasticity are ***,the device realizes the spatiotemporally integrated electrical and optical stimuli to mimic spatiotemporal information *** study provides a promising direction for constructing more complex spiking neural networks and more powerful neuromorphic systems with brain‐like dynamic spatiotemporal processing functions.

关键词： ion‐conducting membrane multiterminal neuromorphic devices optoelectronic neurotransistors self‐assembly semiconductor spatiotemporal information processing

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Recent Progress in the Fabrication, Properties, and Devices of Heterostructures Based on 2D Materials

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Nano-Micro Letters 2019年第1期11卷 217-240页

作者： Yanping Liu Siyu Zhang Jun He Zhiming M.Wang Zongwen Liu School of Physics and Electronics Hunan Key Laboratory for Super-Microstructure and Ultrafast ProcessCentral South University State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China School of Chemical and Biomolecular Engineering The University of Sydney

With a large number of researches being conducted on two?dimen?sional(2D) materials, their unique properties in optics, electrics, mechanics, and magnetics have attracted increasing attention. Accordingly, the idea of combining distinct functional 2D materials into heterostructures naturally emerged that pro?vides unprecedented platforms for exploring new physics that are not accessible in a single 2D material or 3D heterostructures. Along with the rapid development of controllable, scalable, and programmed synthesis techniques of high?quality 2D heterostructures, various heterostructure devices with extraordinary performance have been designed and fabricated, including tunneling transistors, photodetectors, and spintronic devices. In this review, we present a summary of the latest progresses in fabrications, properties, and applications of di erent types of 2D heterostruc?tures, followed by the discussions on present challenges and perspectives of further investigations.

关键词： Two-dimensional(2D) materials 2D heterostructures Charge and magnetotransport Electronic and optoelectronic devices

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All-optical Raman control of ultracold atomic hyperfine states using pulsed jump protocol

arXiv

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arXiv 2025年

作者： Jian, Xin-Xia Zheng, Zhi-Jian Jiang, Jun-Jie Zhou, Lin Shu, Chuan-Cun He, Jun Hunan Key Laboratory of Nanophotonics and Devices Hunan Key Laboratory of Super-Microstructure and Ultrafast Process School of Physics Central South University Changsha410083 China State Key Laboratory of Magnetic Resonance and Atomic and Molecular Physics Innovation Academy for Precision Measurement Science and Technology Chinese Academy of Sciences Wuhan National Laboratory for Optoelectronics Wuhan430071 China

We develop a pulse-driven jump protocol to achieve all-optical Raman control of ultracold atomic hyperfine states. By establishing general conditions for adiabatic evolution between quantum states in parameter space, we derive the essential pulse area and phase conditions necessary for quantum state transfer in a resonant single-Λ three-level system. We extend this approach to a double-Λ four-level system by incorporating a neighboring intermediate state, which leads to a single-photon detuned Λ three-level system. Through numerical simulations of the ultracold 87Rb atomic system, we demonstrate that high-fidelity and robust control of quantum state transfer can be achieved in the single-Λ three-level system using stimulated Raman adiabatic passage (STIRAP) and the pulsed jump protocol. Furthermore, we show that the destructive quantum interference effects between resonant and detuned Raman pathways in the double-Λ four-level system can be mitigated by optimizing the pulse area and two-photon detuning parameters within the pulsed jump protocol. This work presents a promising approach for achieving all-optical Raman control of quantum state transfer in ultracold atomic hyperfine states. © 2025, CC BY.

关键词： Atoms

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Study of Large-area Flexible Transistor Array Fabrication 10

Study of Large-area Flexible Transistor Array Fabrication

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2023 10th International Conference on Advanced Manufacturing Technology and Materials Engineering, AMTME 2023

作者： Chen, Zengbian Hunan Key Laboratory for Super Microstructure and Ultrafast Process School of Physics and Electronics Central South University Hunan Changsha410083 China

In recent years, the rapid preparation of transistor devices and the control of manufacturing costs have been the focus of researchers. Conventional transistor semiconductor films are usually applied by spin coating or magnetron sputtering. However, the spin coating method tends to cause material waste. Based on this, a method of screen printing semiconductor layers is proposed. In this paper, P3HT ink was obtained by dissolving a mixture of P3HT and ethyl cellulose in a toluene solution. The screen printing technique was used to successfully obtain the semiconductor layer, which in turn successfully printed the transistor array. The dielectric layer is the screen-printed ionic gel and the electrode is vaporized gold electrode, resulting in a 100% success rate of transistors. The operating performance of the device is more stable than that of the spin-coating method, and the switching ratio of the obtained device is stable above 104 when the gate voltage is -3-3 V, -4-4 V, and -5-5 V, respectively. This approach offers a new way of thinking about flexible printed electronics. © Published under licence by IOP Publishing Ltd.

关键词： Screen printing

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Van der Waals epitaxy of type-Ⅱ band alignment CsPbI_(3)/TMDC heterostructure for optoelectronic applications

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Frontiers of physics 2024年第5期19卷 95-107页

作者： Chang Lu Shunhui Zhang Meili Chen Haitao Chen Mengjian Zhu Zhengwei Zhang Jun He Lin Zhang Xiaoming Yuan Hunan Key Laboratory of Super Microstructure and Ultrafast Process School of PhysicsCentral South UniversityChangsha 410083China College of Advanced Interdisciplinary Studies&Hunan Provincial Key Laboratory of Novel Nano-Optoelectronic Information Materials and Devices National University of Defense TechnologyChangsha 410073China

Van der Waals epitaxy allows heterostructure formation without considering the lattice match requirement,thus is a promising method to form 2D/2D and 2D/3D *** the unique optical properties of CsPbI_(3) and transition metal dichalcogenides(TMDCs),their heterostructure present potential applications in both photonics and optoelectronics ***,we demonstrate selective growth of cubic phase CsPbI_(3) nanofilm with thickness as thin as 4.0 nm and Zigzag/armchair orientated nanowires(NWs)on monolayer WSe_(2).Furthermore,we show growth of CsPbI_(3) on both transferred WSe_(2) on copper grid and WSe_(2) based optoelectrical devices,providing a platform for structure analysis and device performance *** electron microscopy(TEM)results reveal the epitaxial nature of cubic CsPbI_(3) *** revealed growth fundamental of CsPbI_(3) is universal valid for other twodimensional substrates,offering a great advantage to fabricate CsPbI_(3) based van der Waals heterostructures(vdWHs).X-ray photoelectron spectroscopy(XPS)and optical characterization confirm the type-II band alignment,resulting in a fast charger transfer process and the occurrence of a broad emission peak with lower *** formation of WSe_(2)/CsPbI_(3) heterostructure largely enhance the photocurrent from 2.38 nA to 38.59 *** findings are vital for bottom-up epitaxy of inorganic semiconductor on atomic thin 2D substrates for optoelectronic applications.

关键词： van der Waals epitaxy band alignment growth fundamental charge transfer photodetector

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