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Recent Progress in the Fabrication, Properties, and Devices of Heterostructures Based on 2D Materials

Nano-Micro Letters 2019年第1期11卷 217-240页

作者： Yanping Liu Siyu Zhang Jun He Zhiming M.Wang Zongwen Liu School of Physics and Electronics Hunan Key Laboratory for Super-Microstructure and Ultrafast ProcessCentral South University State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China School of Chemical and Biomolecular Engineering The University of Sydney

With a large number of researches being conducted on two?dimen?sional(2D) materials, their unique properties in optics, electrics, mechanics, and magnetics have attracted increasing attention. Accordingly, the idea of combining distinct functional 2D materials into heterostructures naturally emerged that pro?vides unprecedented platforms for exploring new physics that are not accessible in a single 2D material or 3D heterostructures. Along with the rapid development of controllable, scalable, and programmed synthesis techniques of high?quality 2D heterostructures, various heterostructure devices with extraordinary performance have been designed and fabricated, including tunneling transistors, photodetectors, and spintronic devices. In this review, we present a summary of the latest progresses in fabrications, properties, and applications of di erent types of 2D heterostruc?tures, followed by the discussions on present challenges and perspectives of further investigations.

关键词： Two-dimensional(2D) materials 2D heterostructures Charge and magnetotransport Electronic and optoelectronic devices

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All-optical Raman control of ultracold atomic hyperfine states using pulsed jump protocol

arXiv

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arXiv 2025年

作者： Jian, Xin-Xia Zheng, Zhi-Jian Jiang, Jun-Jie Zhou, Lin Shu, Chuan-Cun He, Jun Hunan Key Laboratory of Nanophotonics and Devices Hunan Key Laboratory of Super-Microstructure and Ultrafast Process School of Physics Central South University Changsha410083 China State Key Laboratory of Magnetic Resonance and Atomic and Molecular Physics Innovation Academy for Precision Measurement Science and Technology Chinese Academy of Sciences Wuhan National Laboratory for Optoelectronics Wuhan430071 China

We develop a pulse-driven jump protocol to achieve all-optical Raman control of ultracold atomic hyperfine states. By establishing general conditions for adiabatic evolution between quantum states in parameter space, we derive the essential pulse area and phase conditions necessary for quantum state transfer in a resonant single-Λ three-level system. We extend this approach to a double-Λ four-level system by incorporating a neighboring intermediate state, which leads to a single-photon detuned Λ three-level system. Through numerical simulations of the ultracold 87Rb atomic system, we demonstrate that high-fidelity and robust control of quantum state transfer can be achieved in the single-Λ three-level system using stimulated Raman adiabatic passage (STIRAP) and the pulsed jump protocol. Furthermore, we show that the destructive quantum interference effects between resonant and detuned Raman pathways in the double-Λ four-level system can be mitigated by optimizing the pulse area and two-photon detuning parameters within the pulsed jump protocol. This work presents a promising approach for achieving all-optical Raman control of quantum state transfer in ultracold atomic hyperfine states. © 2025, CC BY.

关键词： Atoms

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Study of Large-area Flexible Transistor Array Fabrication 10

Study of Large-area Flexible Transistor Array Fabrication

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2023 10th International Conference on Advanced Manufacturing Technology and Materials Engineering, AMTME 2023

作者： Chen, Zengbian Hunan Key Laboratory for Super Microstructure and Ultrafast Process School of Physics and Electronics Central South University Hunan Changsha410083 China

In recent years, the rapid preparation of transistor devices and the control of manufacturing costs have been the focus of researchers. Conventional transistor semiconductor films are usually applied by spin coating or magnetron sputtering. However, the spin coating method tends to cause material waste. Based on this, a method of screen printing semiconductor layers is proposed. In this paper, P3HT ink was obtained by dissolving a mixture of P3HT and ethyl cellulose in a toluene solution. The screen printing technique was used to successfully obtain the semiconductor layer, which in turn successfully printed the transistor array. The dielectric layer is the screen-printed ionic gel and the electrode is vaporized gold electrode, resulting in a 100% success rate of transistors. The operating performance of the device is more stable than that of the spin-coating method, and the switching ratio of the obtained device is stable above 104 when the gate voltage is -3-3 V, -4-4 V, and -5-5 V, respectively. This approach offers a new way of thinking about flexible printed electronics. © Published under licence by IOP Publishing Ltd.

关键词： Screen printing

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Van der Waals epitaxy of type-Ⅱ band alignment CsPbI_(3)/TMDC heterostructure for optoelectronic applications

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Frontiers of physics 2024年第5期19卷 95-107页

作者： Chang Lu Shunhui Zhang Meili Chen Haitao Chen Mengjian Zhu Zhengwei Zhang Jun He Lin Zhang Xiaoming Yuan Hunan Key Laboratory of Super Microstructure and Ultrafast Process School of PhysicsCentral South UniversityChangsha 410083China College of Advanced Interdisciplinary Studies&Hunan Provincial Key Laboratory of Novel Nano-Optoelectronic Information Materials and Devices National University of Defense TechnologyChangsha 410073China

Van der Waals epitaxy allows heterostructure formation without considering the lattice match requirement,thus is a promising method to form 2D/2D and 2D/3D *** the unique optical properties of CsPbI_(3) and transition metal dichalcogenides(TMDCs),their heterostructure present potential applications in both photonics and optoelectronics ***,we demonstrate selective growth of cubic phase CsPbI_(3) nanofilm with thickness as thin as 4.0 nm and Zigzag/armchair orientated nanowires(NWs)on monolayer WSe_(2).Furthermore,we show growth of CsPbI_(3) on both transferred WSe_(2) on copper grid and WSe_(2) based optoelectrical devices,providing a platform for structure analysis and device performance *** electron microscopy(TEM)results reveal the epitaxial nature of cubic CsPbI_(3) *** revealed growth fundamental of CsPbI_(3) is universal valid for other twodimensional substrates,offering a great advantage to fabricate CsPbI_(3) based van der Waals heterostructures(vdWHs).X-ray photoelectron spectroscopy(XPS)and optical characterization confirm the type-II band alignment,resulting in a fast charger transfer process and the occurrence of a broad emission peak with lower *** formation of WSe_(2)/CsPbI_(3) heterostructure largely enhance the photocurrent from 2.38 nA to 38.59 *** findings are vital for bottom-up epitaxy of inorganic semiconductor on atomic thin 2D substrates for optoelectronic applications.

关键词： van der Waals epitaxy band alignment growth fundamental charge transfer photodetector

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Polarization dependent nonlinear absorption in Au nanowire array

Polarization dependent nonlinear absorption in Au nanowire a...

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作者： Xing, Ruo Chen Xiao, Si He, Jun Institute of Super-microstructure and Ultrafast Process in Advanced Materials School of Physics and Electronics Central South University Changsha 410083 China Hunan Key Laboratory for Super-microstructure and Ultrafast Process Central South University Changsha 410083 China

ISBN: (纸本)9783038351214

The polarization dependent nonlinear absorption was observed in ordered Au nanowire array. The linear and nonlinear polarized absorption at 780 nm is investigated by Z-scan. When the angle between the polarization direction of input laser and the long axis of Au nanowires is 90°(perpendicular), the linear absorption reaches the maximum and the nonlinear absorption reaches the minimum. The nonlinear absorption coefficient β decreases from positive to negative as the angle increase from 0° to 90°. There may be two nonlinear absorption mechanisms resulting in this phenomenon: two-photon absorption and saturable absorption in nanoscale. © (2014) Trans Tech Publications, Switzerland.

关键词： Polarization

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Characteristics research of gallium arsenide solar cells under femtosecond laser illumination

Characteristics research of gallium arsenide solar cells und...

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作者： Xiao, Si Gao, Yi Tan Tian, Xiu Qin He, Jun Institute of Super-microstructure and Ultrafast Process in Advanced Materials Department of Physics and Electronics Central South University Changsha 410083 China Hunan Key Laboratory for Super-microstructure and Ultrafast Process Central South University Changsha 410083 China

ISBN: (纸本)9783038351214

Femtosecond laser with ultrashort pulse (≤35fs) is used to investigate the damage threshold and light-to-electric conversion efficiency of gallium arsenide solar cells. Different from nanosecond or picosecond lasers, the damage threshold of the solar cell illuminated by femtosecond laser is slightly higher than that under the illumination of continuous-waves laser with the same wavelength. Because the thermal non-equilibrium effect becomes obvious, heat conduction phenomenon no longer obeys the law of Fourier, when the heating pulse time of femtosecond laser is equal to or shorter than the electron- phonon coupling time. The photovoltaic properties of gallium arsenide solar cells under femtosecond pulse laser illumination are measured. The device shows better short circuit current and the light-to-electric conversion efficiency under femtosecond pulse laser than that under continuous-waves laser of the same wavelength. © (2014) Trans Tech Publications, Switzerland.

关键词： Solar cells

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Protection of entanglement between two V-atoms in a multi-cavity coupling system

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Chinese Physics B 2022年第1期31卷 124-129页

作者： Wen-Jin Huang Mao-Fa Fang Xiong Xu Synergetic Innovation Center for Quantum Effects and Applications Key Laboratory of Low-dimensional Quantum Structures and Quantum Control of Ministry of EducationSchool of Physics and ElectronicsHunan Normal UniversityChangsha 410081China School of Physics and Electronics Hunan Key Laboratory of Super Microstructure and Ultrafast ProcessState Key Laboratory of Powder MetallurgyCentral South UniversityChangsha 410083China

The protection of the entanglement between two V-atoms(EBTVA)in a multi-cavity coupling system is *** whole system consists of two *** two V-atoms are initially in the maximum entangled state and interacts locally with its own dissipative cavity which is coupled to the external cavities with high quality factor(ECWHQF).The results show that,when there is no ECWHQF,the EBTVA can be protected effectively in the case where the V-atom and the dissipative cavity are weak coupled in large detuning,while when there are different numbers n of ECWHQF coupled to two dissipative cavities,by adjusting the parameters of the number n of ECWHQF and the coupling strength k between cavities,the EBTVA can be protected perfectly and *** result provides an effective method for protecting entanglement resources of three-level system.

关键词： V-atom multi-cavity coupling system entanglement negativity

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Two-step processed efficient perovskite solar cells via improving perovskite/PTAA interface using solvent engineering in PbI2 precursor

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Chinese Physics B 2020年第4期29卷 563-570页

作者： Cao-Yu Long Ning Wang Ke-Qing Huang Heng-Yue Li Biao Liu Jun-Liang Yang Hunan Key Laboratory for Super-microstructure and Ultrafast Process School of Physics and ElectronicsCentral South UniversityChangsha 410083China

The morphology and interface of perovskite film are very important for the performance of perovskite solar cells(PSCs).The quality of perovskite film,fabricated via two-step spin-coating process,is significantly influenced by the morphology and crystallinity of PbI2 *** the addition of additive dimethyl sulfoxide(DMSO)into the PbI2 precursor,the roughness and trap-state density of perovskite film have been significantly reduced,leading to the excellent contact between perovskite layer and subsequent deposited carrier transport ***,the planar heterojunction PSCs with an architecture of ITO/SnO2/perovskite/PTAA/Ag show an efficiency up to 19.02%.Furthermore,PSCs exhibit promising stability in air with a humidity of ~45%,and retain 80% of initial efficiency after being exposed to air for 400 h without any encapsulation.

关键词： perovskite solar cells planar heterojunction interface PbI2-DMSO complex

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The effect of air exposure on device performance of flexible C8-BTBT organic thin-film transistors with hygroscopic insulators

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Science China Materials 2020年第12期63卷 2551-2559页

作者： Pengshan Xie Tianjiao Liu Pei He Guozhang Dai Jie Jiang Jia Sun Junliang Yang Hunan Key Laboratory for Super-microstructure and Ultrafast Process School of Physics and ElectronicsCentral South UniversityChangsha 410083China

Organic thin film transistors(OTFTs)are normally sensitive to ambient conditions and show performance degradation in *** the contrary,the performance of flexible 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene(C8-BTBT)OTFTs using cross-linked polymer layer,poly(4-vinyl-phenol)-4,4’-(hexafluoroisopropylidene)diphthalic anhydride(PVP-HDA),as the dielectric layer can be improved in air conditions with 40%relative *** soaking in air with 40%relative humidity,the electrical behavior,surface morphology,and contact angle of the flexible C8-BTBT OTFTs using PVP-HAD as dielectric layer with three different thicknesses were *** is found that,when the devices with 375 nm-thick PVP-HDA films are placed in 40%relative humidity air conditions for 6 h,the corrected average mobility(μ)can increase from 3.2 to 5.1 cm^2 V^-1 s^-***,the average threshold voltage(Vth)changes from-12.4 to-9.3 V while keeping a constant ratio of I on/Ioff=10^*** results indicate that the flexible C8-BTBT OTFTs with PVP-HDA dielectric layer exhibit interesting application prospects.

关键词： flexible electronics C8-BTBT OTFTs PVP-HDA hygroscopicity air stability

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Modulated thermal transport for flexural and in-plane phonons in double-stub graphene nanoribbons

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Chinese Physics B 2018年第8期27卷 566-571页

作者： Chang-Ning Pan Meng-Qiu Long JuJa He Hunan Key Laboratory of Super Micro-structure and Ultrafast Process School of Physics and Electronics Central South UniversityChangsha 410083China School of Science Hunan University of TechnologyZhuzhou 412008China

Thermal transport properties are investigated for out-of-plane phonon modes （FPMs） and it-plane phonon modes （IPMs） in double-stub graphene nanoribbons （GNRs）. The results show that the quantized thermal conductance plateau of FPMs is narrower and more easily broken by the double-stub structure. In the straight GNRs, the thermal conductance of FPMs is higher in the low temperature region due to there being less cut-off frequency and more low-frequency excited modes. In contrast, the thermal conductance of IPMs is higher in the high temperature region becau~,＇.e of the wider phonon energy spectrum. Furthermore, the thermal transport of two types of phonon modes can be modulated by the double-stub GNRs, the thermal conductance of FPMs is less than that of IPMs in the low temperatures, but it dominates the contribution to the total thermal conductance in the high temperatures. The modulated thermal conclu~＇tanc：e can provide a guideline for designing high-performance thermal or thermoelectric nanodevices based on graphene.

关键词： graphene nanoribbon flexural phonons in-plane phonons thermoelectric properties

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