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IEEE Journal on Flexible Electronics 2024年第1期3卷 29-41页

作者： Song, Honglin Li, Yanran Huang, Zhuohui Zhang, Yi Jiang, Jie Central South University Hunan Key Laboratory of Nanophotonics and Devices Hunan Key Laboratory of Super Microstructure and Ultrafast Process School of Physics Changsha410082 China

It is difficult for traditional digital circuits to gain a foothold in the next generation of artificial intelligence (AI) and Internet of Things (IoT) because the von Neumann architecture faces storage and power consumption walls that are difficult to break through. Fortunately, biologically inspired neuromorphic devices can realize bio-sensing, memory, and computing functions with low power consumption and high energy efficiency, which opens up a new way to break the above technological bottlenecks. Particularly, flexible electrolyte-based neuromorphic devices have significant application potential in the fields of bio-prosthesis, wearable intelligent systems, and brain-computer interface due to their flexible, reconfigurable, and biocompatible characteristics. This article introduces their working mechanisms and recent progresses in artificial neural networks, bionic perception systems, and human-machine interfaces. Finally, the existing problems, challenges, and future directions are discussed. © 2022 IEEE.

关键词： Neural networks

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Van der Waals epitaxy of type-Ⅱ band alignment CsPbI_(3)/TMDC heterostructure for optoelectronic applications

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Frontiers of physics 2024年第5期19卷 95-107页

作者： Chang Lu Shunhui Zhang Meili Chen Haitao Chen Mengjian Zhu Zhengwei Zhang Jun He Lin Zhang Xiaoming Yuan Hunan Key Laboratory of Super Microstructure and Ultrafast Process School of PhysicsCentral South UniversityChangsha 410083China College of Advanced Interdisciplinary Studies&Hunan Provincial Key Laboratory of Novel Nano-Optoelectronic Information Materials and Devices National University of Defense TechnologyChangsha 410073China

Van der Waals epitaxy allows heterostructure formation without considering the lattice match requirement,thus is a promising method to form 2D/2D and 2D/3D *** the unique optical properties of CsPbI_(3) and transition metal dichalcogenides(TMDCs),their heterostructure present potential applications in both photonics and optoelectronics ***,we demonstrate selective growth of cubic phase CsPbI_(3) nanofilm with thickness as thin as 4.0 nm and Zigzag/armchair orientated nanowires(NWs)on monolayer WSe_(2).Furthermore,we show growth of CsPbI_(3) on both transferred WSe_(2) on copper grid and WSe_(2) based optoelectrical devices,providing a platform for structure analysis and device performance *** electron microscopy(TEM)results reveal the epitaxial nature of cubic CsPbI_(3) *** revealed growth fundamental of CsPbI_(3) is universal valid for other twodimensional substrates,offering a great advantage to fabricate CsPbI_(3) based van der Waals heterostructures(vdWHs).X-ray photoelectron spectroscopy(XPS)and optical characterization confirm the type-II band alignment,resulting in a fast charger transfer process and the occurrence of a broad emission peak with lower *** formation of WSe_(2)/CsPbI_(3) heterostructure largely enhance the photocurrent from 2.38 nA to 38.59 *** findings are vital for bottom-up epitaxy of inorganic semiconductor on atomic thin 2D substrates for optoelectronic applications.

关键词： van der Waals epitaxy band alignment growth fundamental charge transfer photodetector

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Giant quartic-phonon decay in PVD-grownα-MoO_(3) flakes

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Nano Research 2023年第1期16卷 1115-1122页

作者： Yongsong Wang Xiao Guo Siwen You Junjie Jiang Zihan Wang Fangping Ouyang Han Huang School of Physics and Electronics Hunan Key Laboratory of Nanophotonics and DevicesCentral South UniversityChangsha 410083China School of Physics and Electronics Hunan Key Laboratory of Super-microstructure and Ultrafast ProcessCentral South UniversityChangsha 410083China

Elementary excitations,such as in-plane anisotropic phonons and phonon polaritons(PhPs),inα-MoO_(3) play key roles in its outstanding physical properties like high carrier mobility and ultralow phonon thermal conductivity().Understanding the excitation mechanisms like phonon–phonon interactions is the most fundamental step to further ***,we report on the systematic Raman investigations on phonon anisotropy and anharmonicity of representative Mo–O stretching vibration phonon modes(SVPMs)in physical vapor deposition(PVD)-grownα-MoO_(3) *** of SVPMs verify the phonon *** abnormal temperature dependence of SVPMs reveals that giant quartic-phonon decay dominates the phonon anharmonicity inα-MoO_(3).An ultrashort phonon lifetime of~0.34 ps gives evidence of theoretically predicted ultralow inα-MoO_(3).Our findings give deep insight into the phonon–phonon interactions inα-MoO_(3) and provide an indicator for its extreme thermal device applications.

关键词： layered materials synthesis phonon-phonon coupling anisotropy ultralow phonon thermal conductivity

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Flexible multiterminal photoelectronic neurotransistors based on self‐assembled rubber semiconductors for spatiotemporal information processing

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SmartMat 2023年第2期4卷 78-87页

作者： Yunchao Xu Gengming Zhang Wanrong Liu Chenxing Jin Yiling Nie Jia Sun Junliang Yang Hunan Key Laboratory for Super Microstructure and Ultrafast Process School of Physics and ElectronicsCentral South UniversityChangshaChina Hunan Key Laboratory of Nanophotonics and Devices School of Physics and ElectronicsCentral South UniversityChangshaChina

A significant step toward constructing high‐efficiency neuromorphic systems is the electronic emulation of advanced synaptic functions of the human *** previous studies have focused on mimicking the basic functions of synapses using single‐gate transistors,multigate transistors offer an opportunity to simulate more complex and advanced memory‐forming behaviors in biological *** this study,a simple and general method is used to assemble rubber semiconductors into suspended two‐phase composite films that are transferred to the surface of the ion‐conducting membrane to fabricate flexible multiterminal photoelectronic *** suspended ion conductive film is used as the gate dielectrics and supporting *** prepared devices exhibit excellent electrical stability and mechanical flexibility after being *** photoelectronic synaptic behavior and pulse‐dependent plasticity are ***,the device realizes the spatiotemporally integrated electrical and optical stimuli to mimic spatiotemporal information *** study provides a promising direction for constructing more complex spiking neural networks and more powerful neuromorphic systems with brain‐like dynamic spatiotemporal processing functions.

关键词： ion‐conducting membrane multiterminal neuromorphic devices optoelectronic neurotransistors self‐assembly semiconductor spatiotemporal information processing

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High-performance 1D CsPbBr_(3)/CdS photodetectors

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Rare Metals 2024年第11期43卷 5932-5942页

作者： Zhi-Lin Xiang Qiu-Hong Tan Ting Zhu Pei-Zhi Yang Yan-Ping Liu Ying-Kai Liu Qian-Jin Wang College of Physics and Electronic Information Yunnan Normal UniversityKunming 650500China Yunnan Provincial Key Laboratory for Photoelectric Information Technology Yunnan Normal UniversityKunming 650500China Key Laboratory of Advanced Technique&Preparation for Renewable Energy Materials Ministry of EducationYunnan Normal UniversityKunming 650500China Hunan Key Laboratory for Super-Microstructure and Ultrafast Process School of Physics and ElectronicsCentral South UniversityChangsha 410083China

The emergence of all-inorganic perovskite CsPbBr_(3)has ignited significant interest in optoelectronic devices,However,CsPbBr_(3)thin film-based photodetectors face performance limitations due to grain boundaries and defect *** address these challenges,we introduce a novel typeⅡheterojunction photodetector utilizing CsPbBr_(3)micro wires(MWs)and CdS nanoribbons(NBs).Remarkably,this photodetector exhibits exceptional characteristics:a high on/off current ratio(1.07×10^(5)),a responsivity of up to 1.35×10^(4)A·W^(-1),specific detectivity of 5.94×10^(15)Jones,external quantum efficiency of2.83×10^(4)%and rapid response/recovery time(400μs/3 ms).These superior performances stem from the exceptional crystalline quality of CsPbBr_(3)MWs and CdS NBs,coupled with the establishment of a typeⅡband alignment at their *** configuration enables efficient carrier separation while suppressing ***,1D CsPbBr_(3)MW/CdS NB heterojunction photodetectors demonstrate reliable imaging capabilities under visible light *** findings present an innovative solution for high-performance perovskite-based photodetectors,holding promise for future commercial applications.

关键词： All-inorganic perovskite Photodetectors Interface coupling Electric charge transfer

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Study of Large-area Flexible Transistor Array Fabrication 10

Study of Large-area Flexible Transistor Array Fabrication

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2023 10th International Conference on Advanced Manufacturing Technology and Materials Engineering, AMTME 2023

作者： Chen, Zengbian Hunan Key Laboratory for Super Microstructure and Ultrafast Process School of Physics and Electronics Central South University Hunan Changsha410083 China

In recent years, the rapid preparation of transistor devices and the control of manufacturing costs have been the focus of researchers. Conventional transistor semiconductor films are usually applied by spin coating or magnetron sputtering. However, the spin coating method tends to cause material waste. Based on this, a method of screen printing semiconductor layers is proposed. In this paper, P3HT ink was obtained by dissolving a mixture of P3HT and ethyl cellulose in a toluene solution. The screen printing technique was used to successfully obtain the semiconductor layer, which in turn successfully printed the transistor array. The dielectric layer is the screen-printed ionic gel and the electrode is vaporized gold electrode, resulting in a 100% success rate of transistors. The operating performance of the device is more stable than that of the spin-coating method, and the switching ratio of the obtained device is stable above 104 when the gate voltage is -3-3 V, -4-4 V, and -5-5 V, respectively. This approach offers a new way of thinking about flexible printed electronics. © Published under licence by IOP Publishing Ltd.

关键词： Screen printing

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Four-terminal perovskite tandem solar cells

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iEnergy 2024年第4期3卷 216-241页

作者： Muhammad Rafiq Hengyue Li Junliang Yang Hunan Key Laboratory for Super-microstructure and Ultrafast Process School of PhysicsCentral South UniversityChangsha 410083China Hunan Key Laboratory of Nanophotonics and Devices School of PhysicsCentral South UniversityChangsha 410083China State Key Labo-ratory of Powder Metallurgy Central South UniversityChangsha 410083China

One of the primary barriers to the advancement of high-efficiency energy conversion technologies is the Shockley–Queisser limit,which imposes a fundamental efficiency constraint on single-junction solar *** advent of multi-junction solar cells provides a formidable alternative to this *** these,organic-inorganic perovskite solar cells(PSCs)have captured substantial interest due to their outstanding optoelectronic properties,including tunable bandgaps and high-power conversion efficiencies,positioning them as prime candidates for multi-junction photovoltaic *** give a review of the latest advancements in four-terminal(4T)perovskite tandem solar cells(TSCs),emphasizing four pertinent configurations:perovskite-silicon(PVK/Si),per-ovskite-perovskite(PVK/PVK),perovskite-Cu(In,Ga)Se_(2)(PVK/CIGS),and perovskite-organic(PVK/organic),as well as other emerging 4T perovskite ***,it also emphasizes the advancement of semitransparent wide-bandgap PSCs for TSC applications,tackling important issues and outlining potential future directions for optimizing 4T tandem design performance.

关键词： Four-terminal tandem solar cells perovskite solar cells transparent electrode.

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Vertical phase separation and morphology optimization of layer-by-layer non-fullerene organic solar cells

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Journal of Central South University 2024年第12期31卷 4338-4365页

作者： NING Bo-cheng MA Yu-meng ZHANG Jun ZOU Ying-ping YANG Jun-liang YUAN Yong-bo ZHANG Lin Hunan Key Laboratory for Super-microstructure and Ultrafast Process School of PhysicsCollege of Chemistry and Chemical EngineeringCentral South UniversityChangsha 410083China

The development of high-performance non-fullerene acceptors with extended exciton diffusion lengths has positioned the sequential layer-by-layer(LBL)solution processing technique as a promising approach for fabricating high-performance and large-area organic solar cells(OSCs).This method allows for the independent dissolution and deposition of donor and acceptor materials,enabling precise morphology *** this review,we provide a comprehensive overview of the LBL processing technique,focusing on the morphology of the active *** swelling intercalation phase-separation(SIPS)model is introduced as the mainstream theory of morphology evolution,with a detailed discussion on vertical phase *** summarize recent strategies for morphology ***,we review the progress in LBL-based large-area device and module fabrication,as well as green processing ***,we highlight current challenges and future prospects,paving the way for the commercialization of LBL-processed OSCs.

关键词： organic solar cells layer-by-layer(LBL)solution processing technique vertical phase separation morphology optimization non-fullerene acceptors

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Multiorder rotational Raman transitions in molecular alignment and orientation

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Physical Review A 2024年第2期110卷 023116页

作者： Shuwu Xu Zhenzhong Lian Qian-Qian Hong Lingxiao Wang Huajie Chen Yunxia Huang Chuan-Cun Shu School of Physics and Technology Hunan Key Laboratory of Nanophotonics and Devices Hunan Key Laboratory of Super-Microstructure and Ultrafast Process School of Physics

Nonresonant two-photon Raman transitions with ΔJ=±2 selection rules induce molecular alignment by altering the rotational quantum number J, whereas three-photon Raman transitions with ΔJ=±1 cause molecular orientation. Here, we perform a combined numerical and theoretical investigation to explore how these Raman transitions depend on laser intensity and to discern multiorder Raman transitions in laser-induced alignment and orientation going beyond two- and three-photon processes. Our results demonstrate the presence of higher-order transitions in molecular alignment and shed light on how alignment affects subsequent three-photon rotational Raman transitions as revealed by the alignment and orientation spectra and the Dyson series expansion of the unitary operator. As the laser pulse strength increases, multiorder transitions become directly observable, which can be utilized to enhance the alignment and orientation of molecules through the excitation of multiple rotational states.

关键词： Atomic & molecular processes in external fields Light-matter interaction Molecular evolution Rotational states

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Structural and magnetic properties of micropolycrystalline cobalt thin films fabricated by direct current magnetron sputtering

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International Journal of Minerals,Metallurgy and Materials 2024年第2期31卷 384-394页

作者： Kerui Song Zhou Li Mei Fang Zhu Xiao Qian Lei School of Materials Science and Engineering Central South UniversityChangsha 410083China State Key Laboratory of Powder Metallurgy Central South UniversityChangsha 410083China Hunan Key Laboratory of Super-Microstructure and Ultrafast Process School of Physics and electronicsCentral South UniversityChangsha 410083China Key Laboratory of Non-Ferrous Metal Materials Science and Engineering Ministry of EducationChangsha 410083China

Pure cobalt(Co)thin films were fabricated by direct current magnetron sputtering,and the effects of sputtering power and pres-sure on the microstructure and electromagnetic properties of the films were *** the sputtering power increases from 15 to 60 W,the Co thin films transition from an amorphous to a polycrystalline state,accompanied by an increase in the intercrystal pore ***,the resistivity decreases from 276 to 99μΩ·cm,coercivity increases from 162 to 293 Oe,and in-plane magnetic aniso-tropy *** the sputtering pressure decreases from 1.6 to 0.2 Pa,grain size significantly increases,resistivity significantly de-creases,and the coercivity significantly increases(from 67 to 280 Oe),which can be attributed to the increase in defect ***-pondingly,a quantitative model for the coercivity of Co thin films was *** polycrystalline films sputtered under pressures of 0.2 and 0.4 Pa exhibit significant in-plane magnetic anisotropy,which is primarily attributable to increased microstress.

关键词： cobalt thin film magnetron sputtering microstructure electromagnetic properties

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