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This work investigates the impact of dielectric halo doping on the radio-frequency (RF) and analog characteristics of InSb/InGaAs tunnel field-effect transistors (TFETs) with a black phosphorus (BP) channel. Source-side dielectric halo doping significantly reduces ambipolar conduction, especially when the negative gate bias is strong. The study evaluates how TiO2-high-k and SiC-low-k dielectric halo materials affect important analog and radio frequency parameters, including gate-to-source capacitance, transconductance, output resistance, gain-bandwidth product, and cut-off frequency, using comprehensive TCAD 3D simulations with Silvaco. The results demonstrate that while high-k halo doping effectively lessens ambipolar effects, low-k materials enhance analog and radio frequency performance. Furthermore, a comparison of transient behaviour shows that the BP-channel InSb/InGaAs TFET performs better than conventional TFET designs, making it a viable option for high-frequency and energy-efficient circuit applications.
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版权所有:内蒙古大学图书馆 技术提供:维普资讯• 智图
内蒙古自治区呼和浩特市赛罕区大学西街235号 邮编: 010021
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