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20th Conference Scientific Services and Internet, SSI 2018

作者： Leontev, D.V. Tarasov, G.V. Kharitonov, D.I. Institute of automation and control processes FEB RAS Russia

The questions of development on graphical accelerator (GPU) of an algorithm of modeling an unsteady gas flows through porous media with a sources of chemical combustion are considered. Numerical method for solving considered problem is based on combination of explicit and implicit finite-differences methods (FDM). The developed program’s source code has a classical internal structure, including stage of input data preparing, stage of calculations, and stage of writing final results. By this article the migration attempt of calculation stage on GPU is initiated. It is found that for the considered problem the utilization of both CPU and GPU for computations is not effective through a two reasons. Firstly, there is a data dependency between values of explicit and implicit methods. In concerning this it is no possibility to parallelize methods’ computations on different processors. Secondly, the large overheads on data transmission between CPU memory and GPU memory do not allow performing computations to solve equations and boundary conditions with a high performance. The classical mapping method of kernel threads on computational domain is used for solving explicit FDM. Each kernel thread computes the single cell of computational grid. Block size is matched experimentally for optimal performance values. The implicit FDM is solved using predefined solver from cuSPARSE library specially optimized for GPU. The performance analysis is fulfilled using NVidia Visual Profiler. The evaluation of the performance result is given;the future steps of code modification and performance improvement are described. © 2018 CEUR-WS. All rights reserved.

关键词： Graphics processing unit

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The data processing model of computational experiments 20

The data processing model of computational experiments

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20th Conference Scientific Services and Internet, SSI 2018

作者： Leontev, D.V. Tarasov, G.V. Kharitonov, D.I. Institute of automation and control processes FEB RAS Russia

An approach to construct a data processing models of a computational experiments is considered. To make models the Petri nets are used. The model of computational experiment consists of computational and control processes models. The models are built separately. The computational process model is built in a two stages. On the first stage the user generates the event tree of computational experiment. On the second stage the computational process model is automatically built from the event tree. For the building of the model a template constructions are used, which are composed together. Each element in the event tree has its own template constructions. The model of the control process is built from a reaction patterns. The following three reaction patterns are developed: reaction on a previous event, reaction on each N-th event, reaction on a next event. The reaction pattern is configured on the triggered event. The main feature of the developed approach is that there is no need to reprogram an original computational task. The approach allows users with minimal skills to make the data processing models. The examples of constructing of data processing models are presented. © 2018 CEUR-WS. All rights reserved.

关键词： Petri nets

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Formation and thermoelectric properties of the n- And p-type silicon nanostructures with embedded GaSb nanocrystals

Formation and thermoelectric properties of the n- And p-type...

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作者： Goroshko, Dmitrii L. Chusovitin, Evgeniy A. Subbotin, Evgeniy Y. Chusovitina, Svetlana V. Balagan, Semeyon A. Galkin, Konstantin N. Dotsenko, Sergey A. Gutakovskii, Anton K. Khovaylo, Vladimir V. Nazarov, Vladimir U. Galkin, Nikolay G. Institute of Automation and Control Processes FEB RAS 5 Radio Street Vladivostok690041 Russia Far Eastern Federal University 10 Ajax Bay Russky Island Vladivostok Russia Institute of Semiconductor Physics of SB RAS 13 pr. Lavrentieva Novosibirsk630090 Russia National University of Science and Technology MISiS 4 Leninskiy pr. Moscow119049 Russia Research Center for Applied Sciences Academia Sinica Taipei11529 Taiwan

A silicon heterostructure with four layers of embedded gallium antimonide nanocrystals was formed on a Si(111) substrate by co-deposition of Ga and Sb using solid-phase epitaxy. Si(111)2 1-Sb surface reconstruction formed prior to the GaSb nanocrystal growth, which kept the nanocrystals from decomposition during the silicon epitaxial layer formation. P- and n-type structures were obtained using silicon of different conductivity types. In the 200-550 K temperature range they showed increases in both electrical conductivity and Seebeck coefficient compared with the bulk samples, which was explained by the peculiarities of the heterointerface band alignment and density of states at the Fermi level. The results open the way for creating multilayer structures with enhanced thermoelectric performance. © 2020 The Japan Society of Applied Physics.

关键词： Silicon

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An influence of the Si(111)3-4O vicinal surface on the solid phase epitaxy of α-FeSi2 nanorods and their crystal parameters 4th

An influence of the Si(111)3-4O vicinal surface on the solid...

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4th Asian School-Conference on Physics and Technology of Nanostructured Materials, ASCO-NANOMAT 2018

作者： Galkin, Nikolay G. Galkin, Konstantin N. Dotsenko, Sergei A. Goroshko, Dmitrii L. Chusovitin, Evgeniy A. Gutakovskii, Anton K. Institute of Automation and Control Processes FEB RAS 5 Radio Street Vladivostok690041 Russia Far Eastern Federal University 8 Sukhanova Street Vladivostok690090 Russia Rzhanov Institute of Semiconductor Physics SB RAS Novosibirsk Russia

ISBN: (纸本)9783035715682

The morphology and structure of iron silicide nanorods formed on Si(111) vicinal surface by the SPE method at T = 630 °C were studied. Optimal Fe coverage and Fe deposition rate for the formation of a dense array of the nanorods (54-65% of the substrate area) on Si (111) surface with 3-4o miscut angles were established. The aspect ratio of the nanorods is 1.9 – 3.3. Cross-sectional images of a high-resolution transmission electron microscopy (HRTEM) have shown that the nanorods have α-FeSi2 crystal structure. They are strained along the "a" axis and stretched along the "c" axis, which increased the unit cell volume by 10.3%. According to HRTEM image analysis, the nanorods have the following epitaxial relationships: α-FeSi2[0 1]//Si[1 0] and α-FeSi2(112)//Si(111). All the data obtained have provided, for the first time, a direct evidence of α-FeSi2 nanorods formation on Si(111) vicinal surface without noticeable penetration of Fe atoms into the Si substrate. © 2019 Trans Tech Publications Ltd, Switzerland

关键词： Iron

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Plasma electrolytic formation of WO3-CuO or WO3-CuWO4 oxide layers on titanium 4th

Plasma electrolytic formation of WO3-CuO or WO3-CuWO4 oxide ...

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4th Asian School-Conference on Physics and Technology of Nanostructured Materials, ASCO-NANOMAT 2018

作者： Vasilyeva, M.S. Rudnev, V.S. Parkhomchuk, A.P. Lukiyanchuk, I.V. Sergeeva, K.A. Sergeev, A.A. Far Eastern Federal University 8 Sukhanova St. Vladivostok690091 Russia Institute of Chemistry FEB RAS 159 pr. 100-letya Vladivostoka Vladivostok690022 Russia Institute of Automation and Control Processes FEB RAS 5 Radio St. Vladivostok690041 Russia

ISBN: (纸本)9783035715682

The oxide layers on titanium were formed by plasma electrolytic oxidation technique in acid aqueous electrolytes containing sodium tungstate and copper acetate. The coatings with WO3-CuO or WO3-CuWO4 oxide layers have been formed in the electrolytes with H2C2O4 (pH~6) or H2SO4 (pH~4) accordingly. The coatings with WO3-CuWO4 have a developed surface architecture. The surface is constructed from coral-like structures with lamellar nanocrystals containing copper tungstate and tungsten oxide. The layers of tungsten oxide nanocrystals occupy the depressions between these structures. The band gap of the mixed WO3-CuWO4 oxide layers is 2.8 eV. © 2019 Trans Tech Publications Ltd, Switzerland

关键词： Tungsten compounds

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Double-atomic-layer Tl-Mg compound on a Si(111) surface with advanced electronic properties

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Physical Review B 2020年第23期101卷 235444-235444页

作者： A. Y. Tupchaya L. V. Bondarenko Y. E. Vekovshinin A. A. Yakovlev A. N. Mihalyuk D. V. Gruznev C. R. Hsing C. M. Wei A. V. Zotov A. A. Saranin Institute of Automation and Control Processes FEB RAS 5 Radio Street 690041 Vladivostok Russia School of Natural Sciences Far Eastern Federal University 690950 Vladivostok Russia Institute of Atomic and Molecular Sciences Academia Sinica P.O. Box 23-166 Taipei 11529 Taiwan

We report on the formation and comprehensive study of atomic and electronic structures of a new Tl-Mg two-dimensional compound reconstruction with 3×3 periodicity on a Si(111) substrate. Owing to properties of its constituent elements and crystal structure with a breathing kagome lattice of Mg and a dense Tl layer (4/3 monolayer), this double-layer system displays promising features, including spin-split metallic bands, nearly flat bands, and a saddle point with corresponding divergences in the local density of states. These features indicate the possibility that strongly correlated electronic states exist in this structure after tuning the Fermi level position. In accordance with the C3 symmetry, we observe spin-orbit-coupling-driven rashba-type spin splitting with spin degeneracy at the M¯ point and Zeeman-like splitting at the K¯ point. In contrast to the previously reported cases, splitting at the K¯ point is significant to produce fully out-of-plane spin-polarized cones. Due to opposite Berry curvatures at the K¯ and K¯′ points of the hexagonal surface Brillouin zone, spins at these valleys have opposite signs, which ensure effective spin-pseudospin coupling.

关键词： Spin-orbit coupling Surface reconstruction Surface states Valleytronics Kagome lattice Surfaces Angle-resolved photoemission spectroscopy Density functional theory Electronic structure Molecular beam epitaxy Scanning tunneling microscopy

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Silicon p+-p--n Diodes with Embedded β -FeSi2 and CrSi2 Nanocrystals: Morphology, Crystal Structure and Photoelectric Properties

Silicon p+-p--n Diodes with Embedded β -FeSi2 and CrSi2 Nan...

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作者： Galkin, N.G. Goroshko, D.L. Chusovitin, E.A. Shevlyagin, A.V. Galkin, K.N. Gutakovskii, A.K. Optics and Electrophysics Laboratory Institute of Automation and Control Processes FEB RAS Radio Str. 5 Vladivostok690041 Russia Laboratory of Nanodiagnostic and Nanolithography Rzhanov Institute of Semiconductor Physics SB RAS Lavrentiev Ave. 13 Novosibirsk630090 Russia

The p+-p - n diode structures with a variable number of β-FeSi2 and CrSi2 nanocrystal (NC) bilayer were studied at room and liquid nitrogen temperatures. The high crystal quality of Si and embedded NCs was determined by HRTEM cross-sectional data. This diode demonstrated a photoresponse in the IR region (1.02-0.8eV) which was associated with a decrease in recombination losses with the main contribution coming from CrSi2 NCs. Calculations of photoyield and its extrapolation to zero resulted in band gap values of 0.35eV at 300K and 0.46eV at 90K. The spectral sensitivity of 1.06×10-4A/W and specific detectivity of 1.38×106(cm Hz1/2/W) were determined at λ=1.5μm and T=300K. © 2019 World Scientific Publishing Company.

关键词： Nanocrystals

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On gas flows in thermal energy storages based on granular phase change material with different configurations of side walls

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AIP Conference Proceedings 2021年第1期2351卷

作者： S. S. Fetsov Institute of Automation and Control Processes FEB RAS Vladivostok 690041 Russia Far Eastern Federal University Vladivostok 690950 Russia

processes in thermal energy storages (TES) based on granular phase change materials with gaseous heat transfer fluid are considered. The effect of side walls shape on charging and discharging performance of the TES with circular and rectangular cross-section is investigated. For this purpose, using the novel numerical model, the charging and discharging processes in TES with straight, narrowing and expanding side walls are compared. It is shown that preference of the TES shape in general case depends on used preferability criteria, but TES with non-straight walls are preferable in rare cases and TES with straight walls are the most preferable.

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Sensitivity Analysis of Adaptive Holographic Fiber-Optic Acoustic Emission Sensors during the Registration of Acoustic Waves in a Plate

Sensitivity Analysis of Adaptive Holographic Fiber-Optic Aco...

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2019 International Science and Technology Conference on Earth Science, ISTCEarthScience 2019

作者： Bashkov, O.V. Romashko, R.V. Bashkov, I.O. Zaikov, V.I. Khon, H. Solovev, D.B. Komsomolsk-on-Amur State University 27 Lenina Av. Komsomolsk-na-Amure681013 Russia Institute of Automation and Control Processes FEB RAS 5 Radio St. Vladivostok690041 Russia Far Eastern Federal University 8 Sukhanov St. Vladivostok690950 Russia Vladivostok Branch of Russian Customs Academy 16 Strelkovaya St. Vladivostok690034 Russia

Paper presents the results of studying the features of recording acoustic emission waves by fiber-optic sensors. Fiber-optic sensors are used as an elastic medium that receives acoustic emission waves. Optical fibers were built between the layers of the polymer composite material during the manufacturing process. The measuring system is constructed on the basis of an adaptive interferometer. Optical fibers are part of the interferometer optical scheme. The elastic wave acting on an optical fiber changes its optical density, changing the interference pattern of the optical beam. The work of the holographic interferometer based on the fact that the interference pattern, formed by the object and reference light beams, is a dynamic hologram that is constantly recorded in the photorefractive crystal during the elastic action on the fiber. Sensitivity of fiber-optic sensors based on an adaptive interferometer allows recording acoustic emission waves. The acoustic emission waves were generated by the Hsu-Nielsen source. A significant difference in the speed of sound is explained by the anisotropy of the properties of the composite material. The structure and density of the material's fibers in different directions are different. The wavelet transformation was used to form the signal front. © Published under licence by IOP Publishing Ltd.

关键词： Interferometers

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Semitransparent and conductive CaSi2 films for silicon device applications

Semitransparent and conductive CaSi2 films for silicon devic...

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作者： Galkin, Nikolay G. Galkin, Konstantin N. Tupkalo, Andrei V. Chusovitin, Evgenii A. Goroshko, Dmitrii L. Fogarassi, Z. Pecz, B. Laboratory of Optics and Electrophysics Institute of Automation and Control Processes FEB RAS Radio Str. 5 Vladivostok690022 Russia Department of Physics of Low Dimensional Structures Far Eastern Federal University FEFU Campus 10 Ajax Bay Russky Island Vladivostok Russia Department of Thin Layer Physics Institute of Technical Physics and Materials Research Centre for Energy Research Hungarian Academy of Sciences Budapest1525 Hungary

The purpose of this work was to comparatively analyze the structural, optical and electrical properties of calcium silicides (CaSi, and CaSi2) on silicon in the form of epitaxial and nanocrystalline films grown on Si(001) and Si(111) substrates and to determine the field of use. An analysis of the structure of the grown films showed the presence of contributions from amorphous, nanocrystalline and crystalline phases (Ca2Si, CaSi and CaSi2) with an increase of the Si substrate temperature from 190 C to 500 C. It has been established that transparency in the photon energy range 0.2-1.3 eV in CaSi2 films is associated with a low density of states at the Fermi level, and high conductivity is determined by the concentration of free carriers up to 1021 cm-3 at T = 7-300 K. The latter provide high electrical conductivity up to 1200 (Ω cm)-1, low sheet resistance (26-40 Ω/square) and high reflection (80%-90%) at photon energies below 0.4 eV. The unique properties of CaSi2 films are promising for the creation of transparent conductive pads for silicon-based solar cells and the development of infrared photodiodes with a Schottky barrier on p-type silicon. © 2020 The Japan Society of Applied Physics.

关键词： Nanocrystals

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