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检索条件"机构=Institute for Design Problems in Microelectronics of RAS"

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CICADA: A New Tool to design Circuits with Correction and Detection Abilities

CICADA: A New Tool to Design Circuits with Correction and De...

引用

Siberian Conference on Control and Communications (SIBCON)

作者： Alexander L. Stempkovsky Tatiana D. ZHukova Dmitriy Vl. Telpukhov Sergey Is. Gurov Institute for Design Problems in Microelectronics (IPPM RAS) Moscow Russia Faculty of Computational Mathematics and Cybernetics Lomonosov Moscow State University Moscow Russia

In view of rapid development of microelectronic industry, there is a growing need to ensure reliability and fault tolerance of combinational devices exposed to various destabilizing effects. To solve this problem, methods based on synthesis of concurrent error detection (CED) circuits are now increasingly used, which enable, at the expense of some structural redundancy, correcting and/or detecting errors arising in the circuit. For each specific circuit, depending on the chosen synthesis method, CED circuits have different reliability characteristics, which makes it difficult for designers to choose one or another architecture. Therefore, there is a need to increase automation level of the process of selecting a method for control circuit synthesis, depending on the initial parameters of the protected device. This work is devoted to development of methods and software for detecting the best method for synthesizing a control circuit, taking into account the user-introduced constraint on structural redundancy of the resulting circuit.

关键词： Industries Redundancy Fault tolerant systems Process control Tools Probability Reliability engineering

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Dynamic errors of broadband Chebyshev bandpass filters switched on at the ADC input in automatic control systems 4

Dynamic errors of broadband Chebyshev bandpass filters switc...

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4th IEEE International Conference on design and Test of Integrated Micro and Nano-Systems, DTS 2022

作者： Samoylov, Leontiy Denisenko, Darya Prokopenko, Nikolay Bugakova, Anna Southern Federal University Taganrog Russia Don State Technical University Southern Federal University Taganrog Rostov-on-Don Russia Don State Technical University Institute for Design Problems in Microelectronics of Ras Zelenograd Rostov-on-Don Russia Don State Technical University Rostov-on-Don city Russia

ISBN: (纸本)9781665497831

The dynamic errors of band-pass filters (BPF) of the n-th order, consisting of series-connected low-pass filters (LPF) of the Chebyshev type of the n-th order with a cutoff frequency of the amplitude-frequency characteristic (AFC) of the filter ωSH and high-pass filters (HPF) of the Chebyshev type are investigated n-th order with the cutoff frequency of the frequency response of the filter ωSH. It is shown that the dynamic errors of the nth order BPF are determined by the cutoff frequency ωSH of the LPF and significantly depend on the frequency ratio ωSBωSH. As a result of the simulation, the delay times of the BPF were determined, which negatively affect the effective capacity of the ADC. Approximating equations for the dynamic error of the BPF as a function of the parameters n, ωSH and ωSB/ωSH are obtained. Estimates of the maximum dynamic error for filters of the 1st, 2nd and 3rd orders, as well as the errors of the proposed approximation are given. © 2022 IEEE.

关键词： Low pass filters

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design of nonlinear optimal systems on basis of controlled Jordan form

Design of nonlinear optimal systems on basis of controlled J...

引用

East-West design & Test Symposium (EWDTS)

作者： A. R. Gaiduk N. N. Prokopenko Control Systems Department Southern Federal University Russia Don State Technical University Russia Institute for Design Problems in Microelectronics of RAS Zelenograd Russia

The work is devoted to the method development of an optimal control systems design for nonlinear technical plants basis on a Jordan controlled form of their equations. The definition of this form for the plants with single control is given. The solution of the problem design of the optimal system there is if all the nonlinear plant state variables are measured and the plant equations are represented in Jordan controlled form. Analytical expressions which define the optimal control in the sense of a nonlinear square-law and undetermined criteria are given. The design example of the optimal system for nonlinear plants is resulted.

关键词： Optimal control Optimized production technology Mathematical model

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Basic Functional CJFet Op-Amp Nodes for Operation at Low Temperatures and at Conditions of Penetrating Radiation

Basic Functional CJFet Op-Amp Nodes for Operation at Low Tem...

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International Conference on Electrical Machines, Drives and Power Systems (ELMA)

作者： Anna V. Bugakova Darya Yu. Denisenko Nikolay N. Prokopenko Alexey E. Titov Don State Technical University Rostov-on-Don Russia Southern Federal University Taganrog Russia Institute for Design Problems in Microelectronics of RAS Zelenograd Russia

ISBN: (纸本)9781728114149

The new structures of the buffer amplifier (BA) and input differential stage (DS) for analog microcircuits and sensor interfaces are considered in the article. These circuit solutions, based on complementary field effect transistors with p-n-junction (CJFet), can be used in CJFet operational amplifiers (Op-Amp), comparators, etc., which are designed for operation at severe conditions. The proposed BA and DS operate in class AB mode, which enables to provide relatively large output currents in dynamic mode (units of milliamperes) at small static currents of transistors (40-100μA). The recommended application areas for BA and DS are analogue sensor interfaces for space instrumentation, high energy physics, and medicine.

关键词： Resistors Operational amplifiers JFETs Capacitors Resistance Conferences

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Real-time Object Detection with FPGA Using CenterNet

Real-time Object Detection with FPGA Using CenterNet

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IEEE NW Russia Young Researchers in Electrical and Electronic Engineering Conference (EIConRusNW)

作者： Roman A. Solovyev Dmitry V. Telpukhov Irina I. Romanova Alexander G. Kustov Ilya A. Mkrtchan Institute for Design Problems in Microelectronics of Russian Academy of Sciences (IPPM RAS) Moscow Russia School of Economics National Research University Higher Moscow Russia

ISBN: (数字)9781665404761

ISBN: (纸本)9781665446426

the paper proposes methodology for transferring architecture of modern neural network CenterNet to FPGA. CenterNet is a OneStage object detector that is used to detect and locate objects in images. Although this neural network has simple decoder, it shows good performance in terms of accuracy. Very high operation speed of the neural network hardware is achieved due to the choice of suitable encoder and efficient hardware implementation of both the decoder and the last layer with object filtering, and also transition to fixed-point arithmetic. At this, quality of the obtained predictions remains high.

关键词： Neural network hardware Object detection Logic gates Real-time systems Hardware Decoding Field programmable gate arrays

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Development tools for high-performance computing systems using associative environment for computing process organization

Development tools for high-performance computing systems usi...

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East-West design & Test Symposium (EWDTS)

作者： D. N. Zmejev N. N. Levchenko A. S. Okunev Institute for Design Problems in Microelectronics of Russian Academy of Sciences (IPPM RAS) Moscow Russia Institut problem proektirovania v mikroelektronike RAN Moskva RU

ISBN: (纸本)9781509006946

The paper presents the development tools for parallel dataflow computing systems that use associative environment for computing process organization. Such tools are organized as the Software complex for dataflow systems development. They allow to assess the operating efficiency of various associative environment implementation variants. They also allow to evaluate the execution efficiency of tasks from different knowledge areas, to evaluate the programs scalability level on a variety of computing system's configurations and to select a computation distribution functions for localization of computations in time and space.

关键词： Computational modeling Organizations Scalability Supercomputers Hardware Distribution functions Computer architecture

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The Amplitude Responses of the Basic Connection Circuit of a Differential Difference Operational Amplifier in Analog Sensor Interfaces with Nonlinear Input Stages

The Amplitude Responses of the Basic Connection Circuit of a...

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Annual Siberian Russian Workshop on Electron Devices and Materials (EDM)

作者： Nikolay V. Butyrlagin Anna V. Bugakova Nikolay N. Prokopenko Mikhail F. Mitsik Aleksey Ye. Titov Don State Technical University Rostov-on-Don Russia Institute for Design Problems in Microelectronics of RAS Zelenograd Russia Southern Federal University Taganrog Russia

The nonlinear modes of operation of the analog interface based on a differential difference operational amplifier (DDA), which is designed to process the sensor signals in automation devices and robotics, are investigated. The main versions of approximation of the transfer characteristics (TC) and derivatives of the corresponding functions for differential input stages (DS) of DDA (piecewise linear characteristic, hyperbolic tangent, integral polynomial function (IPF)) are considered. It is established that the approximation of the TC in the form of continuous IPF is the most universal and can be recommended for describing the DS properties in the structure of the DDA on small and large signals with different types of transistors (CMOS, JT, JFet). Mathematical analysis and computer simulation shows that the nonidentity of parameters of the input DS to the DDA and the low voltages of the TC limitation have a significant impact on the linearity of the amplitude response of the basic connection circuit of the DDA. The obtained results are recommended to be used not only when creating DDAs of new generation, but also when evaluating nonlinear distortions and fast response in analog devices of automation and computer technology with differential stages.

关键词： Piecewise linear approximation Transistors Operational amplifiers Robot sensing systems Automation Instruments

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The Circuit Technique for Reducing the Zero Level of the JFET Op-Amp on the Push-Pull Folded-Cascode

The Circuit Technique for Reducing the Zero Level of the JFE...

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2022 IEEE International Multi-Conference on Engineering, Computer and Information Sciences, SIBIRCON 2022

作者： Prokopenko, Nikolay Titov, Alexey Chumakov, Vladislav Bugakova, Anna Dept. of Scientific Research Don State Technical University Institute for Design Problems in Microelectronics of the RAS Zelenograd Rostov-on-Don Russia Southern Federal University Dept. of Automatic Control Systems Rostov-on-Don Russia Don State Technical University Dept. of Scientific Research Rostov-on-Don Russia

ISBN: (纸本)9781665464802

In the paper, the authors describe the improved operational amplifier architecture (op-amp). Complementary FETs with the p-n-junction control were used in the design of this op-amp, depletion-mode complementary MOS can also be used. The character of the suggested op-amp is to create conditions that contribute to obtaining low systematical constituent offset voltage (Voff), which significantly depends on the change in the drain-gate specifications of transistors when the static voltages on their drains change. It should be noted that the high symmetric of the static regimen of the input transistors and output transistors of the folded-cascode of the suggested op-amp is supplied to reduce this constituent Voff in the considered op-amp circuit. Computer modelling of the op-amp carried out in the LTSpice was fulfilled in the large range of temperatures (from-197°C to 27°C). The suggested circuit design minimizes the systematical constituent Voff (below 30 µV) and increases the open-loop gain of op-amp to 60 dB. The JFET op-amp circuitry suggested in the paper is advised to analog-to-digital and analog interfaces, incl. those operating at exposure to radiation and low temperatures. © 2022 IEEE.

关键词： Operational amplifiers

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The antialiasing ARC-LPF with independent trimming of the main characteristics

The antialiasing ARC-LPF with independent trimming of the ma...

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East-West design & Test Symposium (EWDTS)

作者： D. Yu. Denisenko Yu.I. Ivanov N. N. Prokopenko Don State Technical University Russia Southern Federal University Russia Don State Technical University Russia Institute for Design Problems in Microelectronics of RAS Russia

A new structure of the active RC low-pass filter (LPF) is proposed. This scheme is recommended as a second-order link in more complicated antialiasing filters and spectrum limiters in the input circuits of analog-to-digital converters. It is shown that in the low-pass filter under consideration an independent trimming of the main characteristics, such as a pole frequency, a pole attenuation, and a DC current transfer ratio, is provided.

关键词： Resistors Attenuation Low pass filters Active filters Operational amplifiers microelectronics Capacitors

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Simulation of total dose influence on analog-digital SOI/SOS CMOS circuits with EKV-RAD macromodel

Simulation of total dose influence on analog-digital SOI/SOS...

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East-West design & Test Symposium (EWDTS)

作者： K. O. Petrosyants I. A. Kharitonov L. M. Sambursky V. N. Bogatyrev Z. M. Povarnitcyna E. S. Drozdenko Institute for Design Problems in Microelectronics of Russian Academy of Sciences (IPPM RAS) Moscow State Institute of Electronics and Mathematics (Technical University) (MIEM) Scientific-Production Association for Instrumentation (NPO IT)

ISBN: (纸本)9781479920976

An EKV-RAD macromodel for SOI/SOS MOSFET with account for radiation effects is developed using a subcircuit approach. As an addition to the standard version of the EKV model 1) radiation dependencies of parameters VTO, GAMMA, KP, E0 are introduced and 2) additional circuit elements to account for floating-body effects and radiation-induced leakage currents under static and dynamic radiation influence are connected. Maximum simulation error is 5-7% in the dose range up to 1 Mrad. It is shown that EKV-RAD spends less CPU time by 15-30% for analog and 40-50% for digital SOI/SOS CMOS circuits simulations compared to BSIM-SOI-RAD model.

关键词： Semiconductor device modeling MOSFET Standards Integrated circuit modeling CMOS integrated circuits Radiation effects Leakage currents

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