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Advancing Wireless Robotic Skin: A 60 GHz Receiver with Bondwire Antenna Supplied by a Perovskite Solar Cell

Advancing Wireless Robotic Skin: A 60 GHz Receiver with Bond...

引用

2024 International Conference on Electrical and Computer Engineering Researches, ICECER 2024

作者： Morath, Helmuth P. E. Castro-Chong, Alejandra M. Protze, Florian Wagner, Jens Vaynzof, Yana Ellinger, Frank Technische Universität Dresden Circuit Design and Network Theory Germany Technische Universität Dresden Emerging Electronic Technologies Germany Leibniz Institute for Solid State and Materials Research Dresden Germany Technische Universität Dresden Chair for Circuit Design and Network Theory Germany

ISBN: (纸本)9798331539733

In this work, we present an ultra-compact 60 GHz receiver, fully integrated with antenna and supplied by a micro perovskite solar cell. This is a significant contribution towards i.e. ultra-compact wireless robotic skin, overcoming the wiring issue of current robotic skins. Low power operation of the on-off keying (OOK) receiver is achieved by aggressive duty cycling. The receiver chip is fabricated in a 22 nm fully depleted silicon-on-insulator (FD-SOI) CMOS technology, occupying an area of only 0. 67 mm2 using a 3D bondwire antenna with 1 mm length and 17 μ m thickness. The active area of the perovskite solar cell, which is needed to supply the receiver core, is 4. 5 mm2. Thus, the solar cell dimensions are comparable to those of the receiver, demonstrating the possible compactness. As a proof of concept, a 10 Mbps pseudo random binary sequence (PRBS) is received over a wireless link distance of 70 cm with the receiver dissipating 170 μ W. The power is provided by the solar cell operating outside in the sun. Moreover, challenges regarding wireless node placement, antenna packaging and power management are identified. © 2024 IEEE.

关键词： Perovskite

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Characterization of Embedded and Thinned RF Chips 24

Characterization of Embedded and Thinned RF Chips

引用

24th European Microelectronics and Packaging Conference, EMPC 2023

作者： Yin, Ran Morath, Helmuth P. E. Hoyer, Christian Nieweglowski, Krzysztof Meier, Karsten Wagner, Jens Ellinger, Frank Bock, Karlheinz Institute of Electronic Packaging Technology Technische Universität Dresden Germany Chair of Circuit Design and Network Theory Dresden Germany Technische Universität Chair of Circuit Design and Network Theory Department of Electrical and Computer Engineering Dresden Germany Institute of Electronic Packaging Technology Department of Electrical and Computer Engineering Technische Universität Dresden Germany

ISBN: (纸本)9780956808691

This work studies the effect of thinning down chips with transmission line structures for flexible embedding technology. Test chips with 90 Ω grounded coplanar waveguide (G-CPW) transmission lines have been designed and manufactured to characterize the high-frequency performance before and after embedding in sheet molding compound (SMC), and thinning down from 300 μm to 20 μm, Molding first technology enables single-die or multiple-die thinning with the embedding material while being held in the exact position, where the subsequent fan-out copper (Cu) redistribution layer (RDL) structuring realizes the direct contacts to the embedded chip, followed by semi-Additive manufacturing of traces. The embedded and thinned chips are characterized by S-parameter measurements in the frequency range from 20 MHz to 65 GHz using a vector network analyzer (VNA). The results show the feasibility of the examined embedding and thinning processes which are suitable for millimeter wave (mmWave) components as shown by the example of a G-CPW transmission line without degrading its RF performance in terms of characteristic impedance and attenuation. © 2023 IMAPS-Europe.

关键词： Millimeter waves

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Low Phase Noise 104 GHz Oscillator Using Self-Aligned On-Chip Voltage-Tunable Spherical Dielectric Resonator in 130-nm SiGe BiCMOS

Low Phase Noise 104 GHz Oscillator Using Self-Aligned On-Chi...

引用

Topical Meeting on Silicon Monolithic Integrated circuits in RF Systems

作者： Yu Zhu Georg Sterzl Jan Hesselbarth Tilo Meister Frank Ellinger Chair for Circuit Design and Network Theory Technische Universität Dresden Dresden Germany Institute of Radio Frequency Technology University of Stuttgart Stuttgart Germany

This paper studies a low phase noise voltage-controlled oscillator that is based on a self-aligned on-chip voltage-tunable spherical dielectric resonator. The proposed resonator has been designed for millimeter-wave applications, provides a high quality factor and is voltage controlled. To prove the concept, the circuit is implemented in a 130-nm SiGe BiCMOS technology. It consists of a two stage amplifier and a microstrip feedback path which couples to the resonator. Measurement results demonstrate a phase noise of −95.9 dBc/Hz at 10 MHz offset from the oscillation frequency at 104.03 GHz and a frequency tuning range of 88 MHz. A maximum output power of −9.9 dBm from 32.5 mW dc power is achieved. Simulations based on measurements of the on-chip spherical dielectric resonator indicate that circuit optimizations will lead to an excellent phase noise of −114.8 dBc/Hz at 10 MHz offset. To the best of the authors’ knowledge, this circuit is the first reported silicon-based MMIC voltage-controlled oscillator using an on-chip dielectric resonator at millimeter-wave band.

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Advancing Wireless Robotic Skin: A 60 GHz Receiver with Bondwire Antenna Supplied by a Perovskite Solar Cell

Advancing Wireless Robotic Skin: A 60 GHz Receiver with Bond...

引用

Electrical and Computer Engineering Researches (ICECER), International Conference on

作者： Helmuth P. E. Morath Alejandra M. Castro-Chong Florian Protze Jens Wagner Yana Vaynzof Frank Ellinger Chair for Circuit Design and Network Theory Centre for Tactile Internet with Human-in-the-Loop (CeTI) Technische Universität Dresden Germany Chair for Emerging Electronic Technologies Technische Universität Dresden Germany Leibniz Institute for Solid State and Materials Research Dresden Germany Chair for Circuit Design and Network Theory Technische Universität Dresden Germany

ISBN: (数字)9798331539733

ISBN: (纸本)9798331539740

In this work, we present an ultra-compact 60 GHz receiver, fully integrated with antenna and supplied by a micro perovskite solar cell. This is a significant contribution towards i.e. ultra-compact wireless robotic skin, overcoming the wiring issue of current robotic skins. Low power operation of the on-off keying (OOK) receiver is achieved by aggressive duty cycling. The receiver chip is fabricated in a 22 nm fully depleted silicon-on-insulator (FD-SOI) CMOS technology, occupying an area of only $\mathbf{0}.\mathbf{67}\mathbf{mm}^{\mathbf{2}}$ using a 3D bondwire antenna with 1 mm length and $\mathbf{17}\boldsymbol{\mu} \mathbf{m}$ thickness. The active area of the perovskite solar cell, which is needed to supply the receiver core, is $\mathbf{4}.\mathbf{5}\mathbf{mm}^{\mathbf{2}}$ . Thus, the solar cell dimensions are comparable to those of the receiver, demonstrating the possible compactness. As a proof of concept, a 10 Mbps pseudo random binary sequence (PRBS) is received over a wireless link distance of 70 cm with the receiver dissipating $\mathbf{170} \boldsymbol{\mu} \mathbf{W}$ . The power is provided by the solar cell operating outside in the sun. Moreover, challenges regarding wireless node placement, antenna packaging and power management are identified.

关键词： Wireless communication Wiring Wireless sensor networks Photovoltaic cells Receiving antennas Packaging Robot sensing systems Skin Perovskites Energy harvesting

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A Broadband, High Dynamic Range DPST Switch and if Amplifier IC 21

A Broadband, High Dynamic Range DPST Switch and if Amplifier...

引用

21st IEEE Annual Wireless and Microwave Technology Conference, WAMICON 2021

作者： Sakalas, M. Joram, N. Protze, F. Ellinger, F. RF Group Baltic Institute of Advanced Technology Lithuania Circuit Design and Network Theory Technische Universität Dresden Germany

ISBN: (纸本)9781728151762

This work presents a broadband double pole single throw (DPST) switch and an intermediate frequency (IF) amplifier combination integrated circuit (IC) designed for a multiple antenna frequency modulated continuous wave (FMCW) radar receiver front-end. The DPST switch and IF amplifier designs feature techniques for enhancing the linearity and bandwidth, whereas on the other hand low noise figure, low DC power consumption and good isolation is maintained. designed using High Voltage CMOS (HV-CMOS) devices from a 130 nm SiGe BiCMOS technology, the combined circuit can be operated at supply voltages in range from 3 V-5 V. At the nominal 5 V operation, it delivers a transducer gain of 20 dB, noise Figure of 10 dB, isolation better than 38 dB, whereas the 3 dB gain flatness was measured from 5 MHz to 270 MHz. © 2021 IEEE.

关键词： Timing circuits

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Quasi-Optical Directional Coupler Based on 3D-Printed Dielectric Image Lines for sub-THz Applications

Quasi-Optical Directional Coupler Based on 3D-Printed Dielec...

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European Conference on Microwave

作者： Leonhard Hahn Lukas Bürk Yu Zhu Christian Carlowitz Gerald Gold Frank Ellinger Martin Vossiek Institute of Microwaves and Photonics (LHFT) Friedrich-Alexander-Universität Erlangen-Nürnberg Germany Chair of Circuit Design and Network Theory (CCN) Technische Universität Dresden Germany

ISBN: (数字)9782874870774

ISBN: (纸本)9798350385892

This paper presents a 3D-printed dielectric directional coupler for the sub-THz band from 140GHz to 220GHz. In contrast to conventional coupling approaches, a quasi-optical operating principle is implemented, which is based on the insertion of a thin dielectric boundary within a dielectric image guide. Due to an intended permittivity shift, the boundary layer acts as a wavesplitter for incident HE 11 waves, whose partial reflections are selectively controllable via material or geometry parameters. This results in significant advantages in terms of achievable bandwidth and required dimensions, while manufacturing costs and complexity are minimized at the same time using additive manufacturing. The realized coupler exhibits broadband matching of approx. 20dB, with high isolation of 25dB and achieves freely configurable, reproducible broadband coupling attenuation between 5dB and 15dB. Due to the remarkable simplicity and small size of the concept, this demonstrates a promising key component for low-loss, large-scale, dielectric sub-THz signal distribution networks.

关键词： Couplings Distribution networks Three-dimensional printing Reflection Dielectrics Broadband communication Manufacturing Permittivity Directional couplers Microwave imaging

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A 27 GHz GaN MMIC Doherty Power Amplifier with Optimized Driver Stages

A 27 GHz GaN MMIC Doherty Power Amplifier with Optimized Dri...

引用

European (Formerly European Gallium Arsenide and Other Semiconductors Application Symposium - EGASS) Microwave Integrated circuit Conference (EuMIC)

作者： Robert Krämer Andres Seidel Philipp Neininger Jens Wagner Frank Ellinger Chair for Circuit Design and Network Theory Technische Universität Dresden Germany Fraunhofer Institute for Applied Solid State Physics IAF Germany Centre for Tactile Internet With Human-in-the-Loop (CeTI) Germany

ISBN: (数字)9782874870781

ISBN: (纸本)9798350385120

In this work, a 26.5 GHz to 29 GHz GaN MMIC Doherty power amplifier concept with two stages per path is investigated in a 150 nm GaN HEMT MMIC technology. Prior to the design the placement of driver stages in Doherty amplifiers is studied and their influence on the system efficiency is evaluated. One of the key findings is that a gain in the second stage of 15 dB assures a degradation on system drain efficiency of less than 5 % in comparison to the single stage efficiency of the second stage. The fabricated GaN Doherty amplifier exhibits a maximum power added efficiency of 35 % and maximum backoff efficiency of 24 % at 8 dB backoff while maintaining a saturated output power of 30.4 dBm.

关键词： Degradation Microwave integrated circuits Power amplifiers Europe Microwave communication HEMTs Microwave circuits Microwave amplifiers Power generation Gain

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Characterization of Embedded and Thinned RF Chips

Characterization of Embedded and Thinned RF Chips

引用

European Microelectronics and Packaging Conference, EMPC

作者： Ran Yin Helmuth P. E. Morath Christian Hoyer Krzysztof Nieweglowski Karsten Meier Jens Wagner Frank Ellinger Karlheinz Bock Centre for Tactile Internet with Human-in-the-Loop (CeTI) Institute of Electronic Packaging Technology Technische Universität Dresden Germany Centre for Tactile Internet with Human-in-the-Loop (CeTI) Chair of Circuit Design and Network Theory Technische Universität Dresden Germany Department of Electrical and Computer Engineering Chair of Circuit Design and Network Theory Technische Universität Dresden Germany Department of Electrical and Computer Engineering Institute of Electronic Packaging Technology Technische Universität Dresden Germany

This work studies the effect of thinning down chips with transmission line structures for flexible embedding technology. Test chips with 90 Ω grounded coplanar waveguide (G-CPW) transmission lines have been designed and manufactured to characterize the high-frequency performance before and after embedding in sheet molding compound (SMC), and thinning down from 300 µm to 20 µm, Molding first technology enables single-die or multiple-die thinning with the embedding material while being held in the exact position, where the subsequent fan-out copper (Cu) redistribution layer (RDL) structuring realizes the direct contacts to the embedded chip, followed by semi-additive manufacturing of traces. The embedded and thinned chips are characterized by S-parameter measurements in the frequency range from 20 MHz to 65 GHz using a vector network analyzer (VNA). The results show the feasibility of the examined embedding and thinning processes which are suitable for millimeter wave (mmWave) components as shown by the example of a G-CPW transmission line without degrading its RF performance in terms of characteristic impedance and attenuation.

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Heterogeneity in Time Delays between Mutually Synchronized 24 GHz Oscillators

Heterogeneity in Time Delays between Mutually Synchronized 2...

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Annual IEEE Northeast Workshop on circuits and Systems (NEWCAS)

作者： Christian Hoyer Lucas Wetzel Dimitris Prousalis Jens Wagner Frank Jülicher Frank Ellinger Chair for Circuit Design and Network Theory Technische Universität Dresden Germany Max Planck Institute for the Physics of Complex Systems Dresden Germany Centre for Tactile Internet with Human-in-the-Loop (CeTI) Technische Universität Dresden Germany

This paper presents the analysis and measurements of the effects of heterogeneous cross-coupling time delays on synchronized states in a network of mutually coupled oscillators. In a network of three mutually coupled phase-locked loops, operating at 24 GHz in a chain topology, the phase relations and frequency of the synchronized state are quantified. The measurements show that such delay heterogeneity changes the properties of self-organized synchronized states. Specifically, it reduces the range of frequencies over which self-organized synchronous states form. It is observed that the frequency of the self-organized synchronized state that would form over a sub-network of two oscillators alone, lies within this range. The experimental observations presented here reveal new insights into the effects of heterogeneity on the dynamics of self-organization in mutually delay-coupled oscillators and the implications for the properties of synchronized states.

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Self-Aligned on-Chip Spherical Dielectric Resonators and Antennas for SiGe MMIC

Self-Aligned on-Chip Spherical Dielectric Resonators and Ant...

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Asia-Pacific Conference on Microwave

作者： Georg Sterzl Yu Zhu Jan Hesselbarth Corrado Carta Marco Lisker Frank Ellinger Institute of Radio Frequency Technology University of Stuttgart Germany Chair of Circuit Design and Network Theory University of Dresden Germany IHP - Leibniz-Institut für innovative Mikroelektronik Frankfurt (Oder) Germany

ISBN: (数字)9784902339567

ISBN: (纸本)9781665451086

Spherical dielectric resonators are investigated as on-chip high-efficiency antenna and as on-chip high-Q resonator. A dielectric sphere of alumina ceramic is precisely placed atop the semiconductor in a shallow crate etched into the back-end-of-line dielectric layers on the chip surface. The sphere resonates in a higher-order mode, efficiently coupled to the on-chip planar microstrip excitation structure. For sphere diameter of 1.1 mm, an antenna with gain of 5.1 dBi and efficiency of 33% is demonstrated at 100 GHz. For a sphere diameter of 1 mm, a resonator is demonstrated with measured loaded Q-factor of 143 at 103 GHz.

关键词： Antenna measurements Microwave antennas Q-factor Semiconductor device measurement Millimeter wave measurements Dielectric resonator antennas System-on-chip

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