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Interconnect Technology Development for 180GHz Wireless mm-Wave System-in-Foil Transceivers

Interconnect Technology Development for 180GHz Wireless mm-W...

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Electronic Components and Technology Conference (ECTC)

作者： Krzysztof Nieweglowski Patrick Seiler David Fritsche Sebastian Lüngen Dirk Plettemeier Corrado Carta Frank Ellinger Karlheinz Bock Institute of Electronic Packaging Technology Chair for Radio Frequency and Photonics Engineering Chair for Circuit Design Network Theory Technische Universität Dresden Dresden Germany

In this work, a polyimide (PI) foil-based wireless transceiver, which can be placed on the top of each node chip stack, is proposed. The transceivers with Butler matrix (BM) steered antenna arrays enable directed links from each node on one PCB towards any other node on the neighboring board in the rack. These passive components can be integrated into the foil whereas the active components (mm-wave ICs - MMICs) fabricated in SiGe-technology have to be connected with low parasitic, matched (wave impedance) interconnects. First the development of fabrication of low-loss transmission line structures on PI-foils will be described. The technology is based on foils with 50μm PI-thickness with Cr/Cu seed metallization and galvanic thickened Au layer. This allows for precise definition of coplanar transmission lines with low roughness (RMS roughness of 20-530nm). The measurements of characteristic parameters show good agreement with simulated data - the deviation of parasitic components (L and C) is below than 10%. A transmission loss of about 0.5 dB/cm at 60 GHz and about 1 dB/cm at 200 GHz has been measured. These substrates have been used for flip-chip assembly of chip components in order to characterize the performance of FC-interconnect at frequencies up to 220 GHz. For this analysis test-chips with transmission lines fabricated in a 130 nm SiGe-BiCMOS technology have been used. In order to mount these chips with Al pad finish on the PI-foil substrates Au studbumps with reduced size (50μm diameter on foot and 30μm height) and thermosonic flip-chip bonding have been used. From the measurements of FC bonded test chips with μ-strip lines on the PI-foils a FC-interconnect loss of about 0.28 ± 0.05 dB per bump at 60 GHz and of about 0.73 ± 0.14 dB per bump at 200 GHz could be derived.

关键词： Transmission line measurements Electronic components Conferences Packaging Flip-chip devices Flexible electronics Radio frequency

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24 GHz BiCMOS Single-Stage Rectifier

24 GHz BiCMOS Single-Stage Rectifier

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IEEE-APS Conference on Antennas and Propagation for Wireless Communications

作者： Andreas Brönner Paulius Sakalas Frank Ellinger R&D - Advance Development WIKA Alexander Wiegand SE & Co. KG Klingenberg Germany Semiconductor Physics Institute Center for Physical Sciences and Technology Vilnius Lithuania Chair for Circuit Design and Network Theory Technische Universität Dresden Dresden Germany

This paper presents a fully integrated 24 GHz single-stage rectifier which is designed for passive millimeter wave wireless systems on-chip. The rectifier is converting the RF power captured by the antenna into DC power necessary to supply the active components of a passive radio-frequency identification (RFID)-tag. By increasing the sensitivity of the rectifier, the read range of a passive RFID tag is maximized. The sensitivity is defined as the minimum input power necessary to achieve the output voltage with a given load. In the proposed work we target an output voltage of 1 V, a load of 200 kΩ and achieved a sensitivity of -14 dBm using a single-stage rectifier. The occupied chip size is 0.09 mm 2 , fabricated in a 130 nm BiCMOS technology. Furthermore, the used source pull technique is discussed, which is used to characterize the nonlinear time-variant rectifier in simulation and measurement.

关键词： Sensitivity Radio frequency Voltage measurement Millimeter wave technology Impedance Tuners BiCMOS integrated circuits

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4×40 Gb/s 2 pJ/bit optical RX with 8ns power-on and CDRLock Time in 14nm CMOS

4×40 Gb/s 2 pJ/bit optical RX with 8ns power-on and CDRLock...

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Optical Fiber Communication Conference, OFC 2018

作者： Cevrero, A. Ozkaya, I. Morf, T. Toifl, T. Seifried, M. Ellinger, F. Khafaji, M. Pliva, J. Henker, R. Ledentsov, N. Kropp, J.-R. Shchukin, V. Zoldak, M. Halmo, L. Eddie, I. Turkiewicz, J. IBM Research Saümertrasse 4 Rüschlikon8803 Switzerland Technische Universität Dresden Chair for Circuit Design and Network Theory Dresden01062 Germany VI-Systems GmbH Hardenbergstrasse 7 Berlin10623 Germany Argotech Holubova 978 Nachod547 01 Czech Republic Compound Semiconductor Technologies Global 4 Stanley Boulevard Blantyre Glasgow Scotland United Kingdom Institute of Telecommunications Warsaw University of Technology Ul. Nowowiejska 15/19 Warsaw00-665 Poland EPFL Route Cantonale Lausanne1015 Switzerland

We report a low-power 4-channel NRZ optical RX including a digital burst-mode CDR measured up to 40Gb/s/lane in 14nm CMOS. The RX, designed for 850nm VCSEL based optical links, can wake-up and achieve phase-lock in 8n... 详细信息

ISBN: (纸本)9781943580385

关键词： CMOS integrated circuits

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design considerations and constraints in silicon based optical on-board interconnects for short range communications

Design considerations and constraints in silicon based optic...

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International Conference on Transparent Optical networks

作者： M. Catuneanu R. Henker R. Hosseini M. Jazayerifar H. Aminpour D. Schöniger A. Giuglea K. Nieweglowski F. Ellinger K. Bock K. Jamshidi Integrated Photonics Devices Group TU Dresden Dresden Germany Chair of Circuit Design and Network Theory TU Dresden Dresden Germany Institute of Electronic Packaging Technology TU Dresden Dresden Germany

In this paper, various trade-offs for the design of short-range optical interconnects for on-board communication in a high-performance computer (HPC) will be discussed. Energy consumption and bandwidth requirements of the components, which are used for the realization of an optical link in future highly adaptive energy-efficient computers, will be estimated based on the energy consumption and bandwidth trends of super computers. A scalable solution and its performance in terms of energy efficiency and bandwidth will be discussed. Results regarding all sub-components of such an optical on-board link are presented including optical components, packaging, and electrical components will be presented in the paper.

关键词： Modulation Integrated optics Optical fiber communication Optical amplifiers Bandwidth Optical fibers

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Modeling of fully printed organic field effect transistors for circuit design and simulation 13

Modeling of fully printed organic field effect transistors f...

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13th International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to circuit design, SMACD 2016

作者： Kaveh, Olka Kheradmand-Boroujeni, Bahman Kasemann, Daniel Leo, Karl Ellinger, Frank Chai. for Circuit Design and Network Theory Technische Universität Dresden Dresden01062 Germany Institute for Applied Photo Physics Technische Universität Dresden Dresden01062 Germany Technische Universität Dresden Dresden01062 Germany

ISBN: (纸本)9781509004904

Organic field effect transistors (OFETs) have significantly improved during recent years. However, there is still a lack of complete compact models for these devices, due to different materials, device structures, and manufacturing processes. Previous studies on compact OFET modeling have only considered static I-V characteristics, which are subject to the bias-stress effect. In this study, for the first time, two different large-signal OFET models are optimized to small-signal experimental data, which are less sensitive to the bias-stress effect. Li's and Estrada's models are studied overall I-V regions, from sub-threshold to above-threshold, and from linear to saturation region with unified formulations. It is found that Estrada's model fits better to the trans-conductance, whereas the Li's model fits better to the intrinsic gain. Both models are implemented in ADS circuit simulator, using the Verilog-A programming language. The bootstrapped amplifier is simulated and is compared with measurement data. © 2016 European Union.

关键词： Analog circuits

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107.5 Gb/s 850 nm multi- and single-mode VCSEL transmission over 10 and 100 m of multi-mode fiber

107.5 Gb/s 850 nm multi- and single-mode VCSEL transmission ...

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2016 Optical Fiber Communications Conference and Exhibition, OFC 2016

作者： Puerta, R. Agustin, M. Chorchos, L. Toeski, J. Kropp, J.-R. Ledentsov, N. Shchukin, V.A. Ledentsov, N.N. Henker, R. Monroy, I. Tafur Olmos, J. J. Vegas Turkiewicz, J.P. Akademivej Building 358 Kgs. Lyngby2800 Denmark VI-Systems GmbH Hardenbergstrasse 7 Berlin10623 Germany Technische Universität Dresden Department for Circuit Design and Network Theory Dresden01062 Germany Institute of Telecommunications Warsaw University of Technology Nowowiejska 15/19 Warsaw00-665 Poland

First time successful 107.5 Gb/s MultiCAP 850 nm OM4 MMF transmissions over 10 m with multi-mode VCSEL and up to 100 m with single-mode VCSEL are demonstrated, with BER below 7% overhead FEC limit measured for each ca... 详细信息

ISBN: (纸本)9781943580071

关键词： Optical fiber communication

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Radio frequency electronics in a-IGZO TFT technology

Radio frequency electronics in a-IGZO TFT technology

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International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)

作者： K. Ishida T. Meister R. Shabanpour B. K. Boroujeni C. Carta G Cantarella L. Petti N. Mtozenrieder G A. Salvatore G Troster F. Ellinger Chair for Circuit Design and Network Theory Technische Universität Dresden Dresden Germany Swiss Federal Institute of Technology Electronics Laboratory Zurich Switzerland Eidgenossische Technische Hochschule Zurich Zurich ZH CH

ISBN: (纸本)9781509012589

This paper reviews the recent progress of active high-frequency electronics on plastic, and gives an outlook towards future advances of radio-frequency electronics in the amorphous Indium Gallium Zinc Oxide (a-IGZO) thin-film transistor (TFT) technology. Our a-IGZO technology is mechanically flexible, bendable and stretchable. A 0.5 μm TFT achieved a measured transit frequency of 138 MHz. We have presented several high-frequency circuits integrated in this a-IGZO technology, including several RF amplifiers and a fully-integrated AM receiver. The receiver consists of a four-stage cascode amplifier, an amplitude detector, a baseband amplifier, and a filter. At a DC current of 7.2 mA and a supply of 5 V, a conversion gain above 15dB was measured from 2 to 20MHz. Based on these works, we are investigating a wireless transmitter to be fully integrated on a plastic film. Some simulation results of a ring-oscillator based on-off-keying modulator and an LC voltage controlled oschillator under investigation are presented.

关键词： Thin film transistors Receivers Radio frequency Substrates Wireless communication Logic gates Frequency measurement

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Modeling of fully printed organic field effect transistors for circuit design and simulation

Modeling of fully printed organic field effect transistors f...

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International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to circuit design (SMACD)

作者： Olka Kaveh Bahman Kheradmand-Boroujeni Daniel Kasemann Karl Leo Frank Ellinger Institute for Applied Photo Physics Center for Advancing Electronics Dresden (CFAED) Technische Universität Dresden Dresden Germany Chair for Circuit Design and Network Theory Technische Universitat Dresden Dresden Sachsen DE

ISBN: (纸本)9781509004911

关键词： Integrated circuit modeling OFETs Data models Fitting Mathematical model Current measurement Physics

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Simultaneous Schur Decomposition of Several Matrices to Achieve Automatic Pairing in Multidimensional Harmonic Retrieval Problems 8

Simultaneous Schur Decomposition of Several Matrices to Achi...

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8th European Signal Processing Conference, EUSIPCO 1996

作者： Haardt, Martin Hüper, Knut Moore, John B. Nossek, Josef A. Institute of Network Theory and Circuit Design Technical University of Munich MunichD-80290 Germany Department of Systems Engineering Australian National University CanberraACT0200 Australia

This paper presents a new Jacobi-type method to calculate a simultaneous Schur decomposition (SSD) of several real-valued, nonsymmetric matrices by minimizing an appropriate cost function. Thereby, the SSD reveals the "average eigenstructure" of these non-symmetric matrices. This enables an R-dimensional extension of Unitary ESPRIT to estimate several undamped R-dimensional modes or frequencies along with their correct pairing in multidimensional harmonic retrieval problems. Unitary ESPRIT is an ESPRIT-type high-resolution frequency estimation technique that is formulated in terms of real-valued computations throughout. For each of the R dimensions, the corresponding frequency estimates are obtained from the real eigenvalues of a real-valued matrix. The SSD jointly estimates the eigenvalues of all R matrices and, thereby, achieves automatic pairing of the estimated R-dimensional modes via a closed-form procedure, that neither requires any search nor any other heuristic pairing strategy. Finally, we show howR-dimensional harmonic retrieval problems (with R) occur in array signal processing and model-based object recognition applications. © 2015 European Signal Processing Conference, EUSIPCO. All rights reserved.

关键词： Frequency estimation

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107.5 Gb/s 850 nm multi- and single-mode VCSEL transmission over 10 and 100 m of multi-mode fiber

107.5 Gb/s 850 nm multi- and single-mode VCSEL transmission ...

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Optical Fiber Communication (OFC) Conference

作者： R. Puerta M. Agustin L. Chorchos J. Toήski J.-R. Kropp N. Ledentsov V. A. Shchukin N. N. Ledentsov R. Henker I. Tafur Monroy J. J. Vegas Olmos J. P. Turkiewicz Dpt. Photonics Engineering Technical University of Denmark (DTU) Lyngby Denmark VI-Systems GmbH Hardenbergstrasse 7 Berlin Germany Institute of Telecommunications Warsaw University of Technology Nowowiejska Poland Politechnika Warszawska Warszawa PL Chair for Circuit Design and Network Theory Technische Universität Dresden Dresden Germany

关键词： Vertical cavity surface emitting lasers Bit rate Optical fiber communication Optical fibers Modulation Adaptive optics

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