For control applications aiming accurate positioning and path tracking friction modelling and compensation can be very important, especially when working with small displacements as usual in nano technologies. The pap...
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For control applications aiming accurate positioning and path tracking friction modelling and compensation can be very important, especially when working with small displacements as usual in nano technologies. The paper at hand describes friction identification and friction model application for a linear high-precision ball bearing guide driven by a voice coil actuator and using high-resolution position measurement equipment. After noting some friction models the characteristics of friction on nanometer scale are investigated with several experiments. At last some remarks on control design are given.
In this paper, some special features found during phase transformations of binary alloys which can influence their potential utilization as reproducible temperature fixed points are described. Furthermore, some experi...
In this paper, some special features found during phase transformations of binary alloys which can influence their potential utilization as reproducible temperature fixed points are described. Furthermore, some experiences gained when applying alloys as phase transformation materials in miniature fixed‐point cells are presented. For a number of selected binary alloys, some investigations have been carried out for determining their melting and solidification temperatures as well as their reproducibility under laboratory conditions. In addition, substantial results are presented concerning the influence of the mixing ratio on the phase transformation plateaus which can be measured using miniature fixed‐point cells. So far, miniature fixed‐point thermocouples with binary alloys as fixed‐point material have been successfully applied, even under industrial conditions, for realizing an automatic single‐point recalibration of the temperature measurement system, with even a multiple‐point recalibration being possible when special alloys are used.
We investigated a method of solid-phase epitaxy (SPE) using low-vacuum, low-pressure chemical vapor deposition (LPCVD) equipment without the load lock chamber that is usually used for the Si LSI process. This is a new...
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We investigated a method of solid-phase epitaxy (SPE) using low-vacuum, low-pressure chemical vapor deposition (LPCVD) equipment without the load lock chamber that is usually used for the Si LSI process. This is a new method of clean surface formation in which the Si substrate is heated after seed formation in an atmosphere of SiH4 gas. Using this method, an L-SPE length of 4 mu m was obtained. The reason for the success of this method appears to be that the seed surface cleaned by HF dipping is preserved by the SiH4 gas. To evaluate the quality of the silicon-on-insulator (SOI) layer formed by this method, a MOSFET and a PN diode were experimentally produced. The MOSFET exhibited normal transistor action, which confirmed that the SOI layer had satisfactory quality without any problem in manufacturing the MOSFET. However, it was found that the n value of the forward direction current characteristic of the PN diode was 1.156 and that the SOI layer had more recombination centers than the Si substrate (n = 1.050). (C) 1997 Scripta Technica, Inc.
This paper presents a measurement technique which makes it possible to scan varying interference patterns by using the incremental procedure (forward-backward counting method). The essence of this procedure is that th...
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