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Comparison and validation of simulation codes against sixteen sets of data from four different pilot plants

Energy Procedia 2009年第1期1卷 1249-1256页

作者： X. Luo J.N. Knudsen D. de Montigny T. Sanpasertparnich R. Idem D. Gelowitz R. Notz S. Hoch H. Hasse E. Lemaire P. Alix F.A. Tobiesen O. Juliussen M. Köpcke H.F. Svendsen Department of Chemical Engineering NTNU Sem Sælands vei 4 N-7491 Trondheim Norway DONG Energy Power A.C. Meyers Vaenge 9 2450 Copenhagen SV Denmark University of Regina Regina Saskatchewan Canada Institute of Thermodynamics and Thermal Process Engineering University of Stuttgart Stuttgart Germany Laboratory of Engineering Thermodynamics University of Kaiserslautern Kaiserslautern Germany IFP Lyon France SINTEF Material and Chemistry Sem Sælands vei 2 N-7491 Trondheim Norwa Vatten fall Research and Development AB 16287 Stockholm Sweden

Sixteen data sets from four different pilot plant studies based on 30 wt% MEA solution as solvent have been simulated in four different commercial simulators and with two in-house codes. The simulations were performed on an as equal basis as possible given the constraints of the various simulators. Basically all the simulators are capable of giving reasonable predictions on overall performance, i.e. CO 2 absorption rate. The reboiler duties are less well predicted, as well as concentration and temperature profiles. For the reboiler temperature there is very much scatter.

关键词： Type your keywords here Separated by semicolons

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Piperylene sulfone: Fully recyclable diprotic apolar solvent for benign pharmaceutical processes

Piperylene sulfone: Fully recyclable diprotic apolar solvent...

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2008 AIChE Annual Meeting, AIChE 100

作者： Eckert, Charles A. LIotta, Charles LL Kjell, Douglas P. School of Chemical and Biomolecular Engineering Specialty Separations Center Georgia Institute of Technology 311 Ferst Drive Atlanta NW GA 30332-0100 United States Chemical Process Research and Development Lilly Corporate Center Lilly Research Laboratories Indianapolis IN 46285 United States

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Risk management in the pharmaceutical product development process

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Journal of Pharmaceutical Innovation 2008年第4期3卷 227-248页

作者： Hulbert, Matthew H. Feely, Liam C. Inman, Eugene L. Johnson, Alton D. Kearney, Albert S. Michaels, James Mitchell, Michael Zour, Elena Worldwide Process Development Cephalon Inc. West Chester PA 19380 145 Brandywine Parkway United States Manufacturing Science and Technology Abbott Laboratories North Chicago IL 60064 1401 Sheridan Road United States Product Research and Development Eli Lilly and Company Indianapolis IN 46285 Lilly Corporate Center DC 4816 United States Global Manufacturing Services Marketed Products Pfizer Inc. New York NY 10017 235 East 42 Street United States Product Development GlaxoSmithKline King of Prussia PA 19405 709 Swedeland Road United States Center for Materials Science and Engineering Merck and Co. Inc. West Point PA 19486 P.O. Box 4 United States Oral and Respiratory Product Development Schering Plough Research Institute Summit NJ 07901 556 Morris Avenue United States Process and Package Development Bristol-Myers Squibb New Brunswick NJ 08901 1 Squibb Drive United States

"The manufacture and use of a drug product, including its components, necessarily entail some degree of risk." - International Conference for Harmonization (ICH) Q9. This paper examines the role of risk management in pharmaceutical product development in the context of patient safety and drug efficacy. Its objective is to contribute to building a common understanding of this quality risk management among the various functional groups involved in developing, testing, manufacturing, and approving of drug products within pharmaceutical companies and regulatory agencies. Selected aspects of drug substance and drug product development are used to demonstrate principles of risk management in action and presented as case studies. © International Society for Pharmaceutical engineering 2008.

关键词： Case studies Quality by design Risk acceptance Risk assessment

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development of automatic computer-aided engineering system for weld distortion analysis in ship production

Development of automatic computer-aided engineering system f...

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10th International Symposium on Practical Design of Ships and other Floating Structures, PRADS 2007

作者： Park, Jung-Goo Heo, Hee-Young Ha, Yun-Sok Jang, Tae-Won Han, Kyeong-Hee Lee, Sang-Heon Moon, Song-Soo Narayan, T.K. Welding Research in Institute of Industrial Technology Samsung Heavy Industries Geoje Gyeongnam Korea Republic of Product Design and Development Altair Engineering Korea Seongnam Gyeonggi Korea Republic of Enterprise Process Management Altair Engineeirng India Private Limited Bangalore India

ISBN: (纸本)0943870046

This work aims to develop the computer-aided weld distortion analysis system with the automatic preprocessing system that can be directly interfaced with the CAD (Computer-Aided Design) model. This system makes it possible to evaluate the deformed shape of welded structure quickly. The analysis results can be used to control or prevent the weld distortion in design and production planning stages. The developed system can make up the finite element model automatically with the geometry and property information from CAD model, as well as generates the welding boundary condition in order to induce the weld shrinkage and distortion based on weld joint type, welding process, and plate thickness of the concerned weld region. Also, this system can assign the fixed boundary condition and contact condition with graphical user-friendly modules. Finally it provides the perfect input-deck generation adopted for FE solver. By employing this system, time needed to get analysis results from CAD model can be reduced drastically. © 2007 American Bureau of Shipping.

关键词： Finite element method

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Vacancy-type defects in MOSFETs with high-k gate dielectrics probed by monoenergetic positron beams

Vacancy-type defects in MOSFETs with high-k gate dielectrics...

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5th International Symposium on High Dielectric Constant Materials and Gate Stacks - 212th ECS Meeting

作者： Uedono, A. Hasunuma, R. Shiraishi, K. Yamabe, K. Inumiya, S. Akasaka, Y. Kamiyama, S. Matsuki, T. Aoyama, T. Nara, Y. Miyazaki, S. Watanabe, H. Umezawa, N. Chikyow, T. Ishibashi, S. Ohdaira, T. Suzuki, R. Yamada, K. Graduate School of Pure and Applied Science University of Tsukuba Tsukuba Ibaraki 305-8573 Japan Semiconductor Leading Edge Technologies Inc Tsukuba Ibaraki 305-8569 Japan Graduate School of Advanced Sciences of Matter Hiroshima University Kagamiyama Higashi-Hiroshima 739-8530 Japan Graduate School of Engineering Osaka University Suita Osaka 565-0871 Japan Advanced Electronic Materials Center National Institute for Materials Science Tsukuba Ibaraki 305-0044 Japan Research Institute for Computational Sciences National Institute of Advanced Industrial Science and Technology Tsukuba Ibaraki 305-8568 Japan Research Institute of Instrumentation Frontier National Institute of Advanced Industrial Science and Technology Tsukuba Ibaraki 305-8568 Japan Nano Technology Research Laboratory Waseda University Shinjuku Tokyo 16-0041 Japan Process and Manufacturing Engineering Center Toshiba Co. Isogo-Ku Yokohama 235-8522 Japan Leading Edge Process Development Center Tokyo Electron LTD. 650 Mitsuzawa Hosaka-cho Nirasaki City Yamanashi 407-0192 Japan

ISBN: (纸本)9781566775700

Vacancy-type defects in MOSFET structures fabricated with high-k (HfSiON) gate dielectrics were studied by monogenetic positron beams An expansion of open volumes in HfSiON fabricated on Si substrates using atomic layer deposition technique was observed with increasing nitrogen concentration This fact was discussed in terms of a role of nitrogen in Hf-related oxide using results obtained by first-principles calculation and XPS. MOSFETs fabricated by F +-channel implantation technique were also characterized. The major defect species which causes the F& shift of MOSFETs was identified as vacancy-fluorine complexes (such as V3F2) locate in channel regions of Si substrates. The preset work suggests that positron annihilation can be used to detect microscopic defects in MOSFETs, and it is a useful tool for determining process parameters for MOSFET fabrications with high-k gate dielectrics. © The Electrochemical Society.

关键词： Fabrication

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FACTORS AFFECTING ON-LINE ESTIMATION OF DIASTEREOMER COMPOSITION USING RAMAN SPECTROSCOPY

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IFAC Proceedings Volumes 2006年第2期39卷 1095-1100页

作者： Sze-Wing Wong Christos Georgakis Gregory Botsaris Kostas Saranteas Roger Bakale System Research Institute for Chemical & Biological Processes and Department of Chemical & Biological Engineering Tufts University Medford MA USA Chemical Process Research and Development Sepracor Inc. Marlborough MA USA

This paper addresses the estimation of fractional composition of two diastereomers during crystallization. The estimation is obtained through a Partial Least Square (PLS) model that utilizes on-line Raman spectroscopy and additional process information such as temperature and slurry density. Several PLS models are developed that incorporate conditions that either neglect or account for variability in the additional process variables. It is argued that the model that incorporates both temperature and slurry density is the most accurate.

关键词： Calibration Prediction Method Regression Analysis and Spectra Correlation

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Thermal stability of NiSi controlled by post silicidation metal doping method

Thermal stability of NiSi controlled by post silicidation me...

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ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology

作者： Nagahiro, K. Tsutsui, K. Shiozawa, T. Xiang, R. Ahmet, P. Kakushima, K. Okuno, Y. Matsumoto, M. Kubota, M. Iwai, H. Frontier Collaborative Research Center Tokyo Institute of Technology S2-20 4259 Nagatsuta Midoriku Yokohama 226-8502 Japan Interdisciplinary Graduate School of Science and Engineering Tokyo Institute of Technology 19 Nishikujo-kasuga-cho Minami-ku Kyoto 601-8413 Japan ULSI Process Technology Development Center Semiconductor Company Matsushita Electric Industrial Co. Ltd. 19 Nishikujo-kasuga-cho Minami-ku Kyoto 601-8413 Japan

ISBN: (纸本)1424401615

Silicidation process and effects of various kinds of additive metals for the improvement of thermal stability of Ni silicide were examined carefully for the 45 nm node. In order to obtain heat resistant NiSi, introduction of various metal layers introduced to top or bottom (interface of Ni/Si) of Ni on Si were investigated. However, we couldn't have any improvement in the thermal stability by any additive metals introduced. Base on that result, we proposed "post silcidation metal doping" (PSMD) method. As the result of the comprehensive experiments for 7 kinds of the additive metal, it was suggested that the combination of preformed NiSi and Pt or Hf addition is the solution to improve the NiSi thermal stability. © 2006 IEEE.

关键词： Silicides

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Thermal stability of NiSi controlled by post silicidation metal doping method

Thermal stability of NiSi controlled by post silicidation me...

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International Conference on Solid-State and Integrated Circuit Technology

作者： K. Nagahiro K. Tsutsui T. Shiozawa R. Xiang P. Ahmet K. Kakushima Y. Okuno M. Matsumoto M. Kubota H. Iwai Frontier Collaborative Research Center Tokyo Institute of Technology Yokohama Japan Interdisciplinary Graduate School of Science and Engineering Tokyo Institute of Technology Kyoto Japan ULSI Process Technology Development Center Semiconductor Company Matsushita Electric Industrial Company Limited Kyoto Japan

ISBN: (纸本)1424401607

Silicidation process and effects of various kinds of additive metals for the improvement of thermal stability of Ni silicide were examined carefully for the 45 nm node. In order to obtain heat resistant NiSi, introduction of various metal layers introduced to top or bottom (interface of Ni/Si) of Ni on Si were investigated. However, we couldn't have any improvement in the thermal stability by any additive metals introduced. Base on that result, we proposed "post silicidation metal doping" (PSMD) method. As the result of the comprehensive experiments for 7 kinds of the additive metal, it was suggested that the combination of preformed NiSi and Pt or Hf addition is the solution to improve the NiSi thermal stability

关键词： Thermal stability Silicidation Doping Additives Annealing CMOS technology Silicides Hafnium Conductivity Substrates

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research on advanced diesel aftertreatment devices

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Review of Automotive engineering 2006年第3期27卷 395-399页

作者： Hara, Shinji Oyama, Koji Kakegawa, Toshiaki Senbokuya, Shigeo Nakamura, Qsamu Shibuya, Masahiko Itoyama, Hiroyuki Okada, Masanori Sugiyama, Gen Hasegawa, Tsutomu Group No. 5 Engine Component Dept. No. 2 Isuzu Motors Limited 8 Tsuchidana Fujisawa Kanagawa 252-8501 Japan Fuel Products R and D Group Fuel Research Laboratory Research and Development Division 8 Chidoricho Naka-ku Yokohama Kanagawa 231-0815 Japan Technical Liaison Dept. Development Management Division Hino Motors Ltd. 3-1-1 Hino-dai Hino Tokyo 191-8660 Japan Fuel Quality Technology Section Manufacturing Department Idemitsu Kosan Co. Ltd. 1280 Kami-humi Sodegaura Chiba 299-0293 Japan Fuels and Process Division Research Center TonenGeneral Sekiyu K.K. 6-1 Ukishima-cho Kawasaki-ku Kawasaki Kanagawa 210-9526 Japan Oil Products Development Section Research and Development Division Showa Shell Sekiyu K.K. 2-3-2 Daiba Minato-ku Tokyo 135-8074 Japan Components Engineering Group Engine Engineering Department No. 3 Powertrain Engineering Division 6-1 Daikoku-cho Tsurumi-ku Yokohama Kanagawa 230-0053 Japan Quality Audit Department Engine Administration Division Power Train Development Group 1 Toyota-cho Toyota Aicht 471-8572 Japan Engine and Environmental Research Division Japan Automobile Research Institute 2530 Karima Tsukuba Ibaraki 305-0822 Japan Fuel Research Laboratory Advanced Technology and Research Institute Japan Petroleum Energy Center 1-4-10 Ohnodai Midori-ku Chiba Chiba 267-0056 Japan

This article reports the effects of fuel sulfur on advanced diesel emission aftertreatment devices as tested by the JCAPII Diesel WG For a Urea SCR system, the NOx emissions reduction performance was compared at low exhaust gas temperature ranges with and without an oxidation catalyst installed in front of the SCR catalyst. For a NOx storage reduction catalyst system, the effect of fuel sulfur content on exhaust emissions and fuel economy during 50,000km driving was examined. © 2006 Society of Automotive Engineers of Japan, Inc. All rights reserved.

关键词： Urea

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Materials for inductive and microwave function integration in LTCC-technology multichip modules

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Journal of Physics: Conference Series 2005年第1期10卷 357-360页

作者： Zaspalis, V.T. Kolenbrander, M. Boerekamp, J. Laboratory of Inorganic Materials Chemical Process Engineering Research Institute 57001 Thessaloniki Greece Ferroxcube GmbH Department of Materials and Process Development 22419 Hamburg Germany

Low Temperature cofired ceramics technology (LTCC) receives considerable industrial interest as a multichip module integration technology, particularly because its very good performance-cost combination. The integration potential of the LTCC technology will be significantly extended with the availability of LTCC-compatible low firing magnetic materials that will enable the integration of high frequency inductive functions. In this article the preparation of low firing cobalt containing hexagonal ferrite materials of the Z-structure (Ba 3Co2Fe24O41, or Co-Z) is described using a PbO-WO3 eutectic mixture as liquid phase sintering additive. Layers from the previous materials are prepared by the slip-casting technique and cofired with commercially available, low dielectric constant, LTCC tapes. Crack free multilayer structures are achieved after firing at 950-1000°C. © 2005 IOP Publishing Ltd.

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