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Society of Plastics Engineers Annual Technical Conference 2005, ANTEC 2005

作者： Hu, X. Nawaby, A.V. Naguib, H.E. Day, M. Ueda, K. Lia, X. Micro and Nanocellular Materials Laboratory Department of Mechanical Engineering University of Ottawa Ottawa Institute for Chemical Process and Environmental Technology National Research Council of Canada Ottawa Unitika Ltd. Research and Development Center Kyoto Japan

Solubility and diffusion coefficients of Carbon Dioxide (CO2) in polylactic acid (PLA) (poly-L-lactic acid (PLLA) and poly-DL-lactic acid (PDLLA) copolymer) have been measured at room temperature and pressures up to 5.8 MPa. Based upon x-ray diffraction analysis it was found that CO2 induced crystallinty in the samples. The results indicated that the crystallinty increased with processing pressure with the largest increases noted at pressures between 2.1 and 2.8 MPa under room temperature conditions. These findings were used to investigate the effect of different saturation conditions on the cellular structures of foams produced using various processing temperatures. Samples saturated at 2.8 MPa and room temperature for two days, followed by foaming at 100°C gave a uniform cellular structure with a cell diameter in order of 30-40 μm and a cell density of 7.93×107 cell/cm3.

关键词： Foamed plastics

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A novel trench capacitor enhancement approach by selective liquid-phase deposition

A novel trench capacitor enhancement approach by selective l...

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作者： Lin, Shian-Jyh Lai, Chao-Sung Liao, Shian-Hau Lee, Chung-Yuan Lee, Pei-Ing Chiang, Shi-Ming Liang, Muh-Wang Department of Electronic Engineering Chang Gung University Taoyuan 333 Taiwan Technology Development Division Nanya Technology Corporation Tao-Yuan Taiwan Mechanical Industry Research Laboratory Industrial Technology Research Institute Hsinchu Taiwan Nanya Tech. Corp. Taoyuan Process Development Division Nanya Technology Corporation Taiwan Technology Development Division Nanya Technology Corporation

For the first time, a novel and simple trench bottle integrated process is demonstrated on dynamic random access memory (DRAM) manufacturing by selective liquid phase deposition (S-LPD) oxide. After photoresist (PR) filled into a deep trench (DT) and was recess etched at around 1.3 μm depth, LPD oxide can be selected as a deposit onto the DT sidewall but not as a deposit on the PR surface. This S-LPD oxide is formed by using hexa-fluosilic acid (H 2SiF6) and water without H3BO3. After the PR is removed, the LPD oxide becomes a protective layer on DT upper portion. Thus, the DT bottom area can be enlarged to form a trench bottle by NH4OH wet etching. Compared to conventional DT trench, 20% of capacitance was enhanced by this S-LPD process. This novel and low-cost method is for the first time demonstrated on 200-mm wafer 110-nm trench DRAM technology. © 2005 IEEE.

关键词： Dynamic random access storage

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Nanomaterials and water purification: Opportunities and challenges

Nanomaterials and water purification: Opportunities and chal...

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作者： Savage, Nora Diallo, Mamadou S. National Center for Environmental Research Office of Research and Development US Environmental Protection Agency Washington DC 20460 United States Materials and Process Simulation Center Beckman Institute 139-74 California Institute of Technology Pasadena CA 91125 United States Department of Civil Engineering Howard University Washington DC 20059 United States

Advances in nanoscale science and engineering suggest that many of the current problems involving water quality could be resolved or greatly ameliorated using nanosorbents, nanocatalysts, bioactive nanoparticles, nanostructured catalytic membranes and nanoparticle enhanced filtration among other products and processes resulting from the development of nanotechnology. Innovations in the development of novel technologies to desalinate water are among the most exciting and promising. Additionally, nanotechnology-derived products that reduce the concentrations of toxic compounds to sub-ppb levels can assist in the attainment of water quality standards and health advisories. This article gives an overview of the use of nanomaterials in water purification. We highlight recent advances on the development of novel nanoscale materials and processes for treatment of surface water, groundwater and industrial wastewater contaminated by toxic metal ions, radionuclides, organic and inorganic solutes, bacteria and viruses. In addition, we discuss some challenges associated with the development of cost effective and environmentally acceptable functional nanomaterials for water purification. © Springer 2005.

关键词： Nanostructured materials

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Adsorption and Self‐Assembly of Peptides on Mica Substrates†

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Angewandte Chemie 2005年第13期117卷

作者： Conor Whitehouse Jiyu Fang Amalia Aggeli Mark Bell Rik Brydson Colin W. G. Fishwick Jim R. Henderson Charles M. Knobler Robert W. Owens Neil H. Thomson D. Alastair Smith Neville Boden Centre for Self‐Organising Molecular Systems Department of Chemistry University of Leeds Leeds LS2 9JT UK Fax: (+44) 113‐343‐6452 Present address: Research and Development Division Fujirebio Inc. 51 Komiya‐cho Hachioji‐shi Tokyo 192‐0031 Japan Fax: (+81) 426‐468‐325 Department of Chemistry and Biochemistry University of California Los Angeles CA 90095‐1569 USA Institute for Materials Research School of Process Environmental and Materials Engineering University of Leeds Leeds LS2 9JT UK Department of Physics and Astronomy University of Leeds Leeds LS2 9JT UK

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EFFECTS OF MODIFICATION OF THE CARBIDE CHARACTERISTICS THROUGH GRAIN BOUNDARY SERRATION ON CREEP-FATIGUE LIFE IN AUSTENITIC STAINLESS STEELS

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Acta Metallurgica Sinica(English Letters) 2004年第5期17卷 632-638页

作者： K.J.Kim H.U.Hong K.S.Min S.W.Nam Dept. of Materials Science and Engineering Korea Advanced Institute of Science and Technology 373-1 Guseong-dong Yuseong-gu Deajeon 305-701 KoreaPosco Technical Research Laboratory #1 Koedong-dong Nam-gu Pohang 790-300 KoreaProcess Solution Development Team 1 LCD R&D Center AMLCD Division Device Solution Network Samsung Electronics Co. LTD.San 24 Nongseo-ri Giheung-eup Yongin Gyeonggi-do 449-771 KoreaDept. of Materials Science and Engineering Korea Advanced Institute of Science and Technology 373-1 Guseong-dong Yuseong-gu Deajeon 305-701 Korea

Modification of the carbide characteristics through the grain boundary serration is investigated, using an AISI 316 and 304 stainless steels. In both steels, triangular carbides were observed at straight grain boundaries while planar carbides were observed at the serrated grain boundaries. The serrated grain boundary energy is observed to be much lower than that of the straight one. Therefore, the carbide morphology is found to be changed from triangular to planar along the serrated boundary to reduce the interfacial energy between the carbide and the matrix. The creep-fatigue properties of these steels at 873K have been investigated. The creep-fatigue life of the sample with planar carbide at the serrated grain boundary was found to be much longer than that with triangular carbide at the straight one. These results imply that the planar carbides with lower interfacial energy have higher cavitation resistance, resulting in the retardation of cavity nucleation and growth to increase creep-fatigue life.

关键词： cavity nucleation factor grain boundary serration carbide morphology austenitic stainless steel grain boundary cavitation

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development of natural gas liquefaction FPSO

Development of natural gas liquefaction FPSO

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23rd International Conference on Offshore Mechanics and Arctic engineering

作者： Masanobu, Sotaro Nakamura, Arata Yoshikawa, Toshio Uetani, Hideo Kato, Shunji Sakamoto, Takashi Sakamoto, Atsushi Kawazuishi, Kenichi Sao, Kunihisa Ocean Space Utilization Group National Maritime Research Institute 6-38-1 Shinkawa Mitaka Tokyo 181-0004 Japan Technical Department Japan National Oil Corporation 2-2-2 Uchisaiwaicho Chiyoda-ku Tokyo 100-8511 Japan Marine Engineering Dept. Nippon Steel Corporation 6-3 Otemachi 2-Chome Chiyoda-ku Tokyo 100-8071 Japan Basic Design Department Mitsui Eng. and Shipbldg. Co. Ltd 1 Yawatakaigan-Dori Ichihara Chiba 290-8601 Japan Development Department Inpex Corporation Ebisu Neonato 4-1-18 Ebisu Shibuya-ku Tokyo 150-0013 Japan Process Engineering Dept 2-12-1 Tsurumichuo Tsurumi-ku Yokohama 230-8601 Japan Ocean Engineering Research Inc. 503 Koshin Build. 1-28-3 Takadanobaba Shinjuku-ku Tokyo 169-0075 Japan

Natural gas is abundant and is cleaner than petroleum. Therefore, demand for natural gas is expected to grow significantly. However, the means of transporting natural gas is presently limited to pipelines and LNG tankers, thereby making its wider use unlikely. There are substantial numbers of known gas reservoirs that are difficult to develop utilizing current transportation means because of constraints such as the scale of gas fields, water depth, distance to shore, and distance from markets. A new, economical, reliable development technique or transportation means is required for developing such gas reservoirs. Ministry of Economy, Trade and Industry (METI), Japan National Oil Corporation (JNOC) and private corporations have jointly investigated the Natural Gas Liquefaction Floating Production, Storage and Offloading (NGL-FPSOs) units to effectively develop gas reservoirs by converting the gas into NGL. This paper presents the background on NGL-FPSO development and findings on its application.

关键词： Natural gas transportation

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In situ electrical impedance imaging of paste during extrusion revealing structure of extrudate 3

In situ electrical impedance imaging of paste during extrusi...

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3rd World Congress on Industrial process Tomography

作者： West, Robert M Scott, David M Sunshine, Gregg Kostuch, Jacek Heikkinen, Lasse Hou, Rhouzhou Williams, Richard A Nuffield Institute University of Leeds 71–75 Clarendon Road LeedsLS2 9PL United Kingdom DuPont Central Research and Development Experimental Station WilmingtonDE19880-0304 United States IMERYS John Keay House St Austell CornwallPL 25 4DJ United Kingdom Department of Applied Physics University of Kuopio PO Box 1627 FIN-70211 Finland Centre for Particle and Colloid Engineering School of Process Environmental and Process Engineering University of Leeds LeedsLS2 9JT United Kingdom

A case study is presented where electrical impedance tomography is used not only to image paste during extrusion but also to characterize a key aspect of its behaviour, that of phase separation. © 2003 Internatio... 详细信息

ISBN: (纸本)9780853163190

关键词： Extrusion

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Improvement of NBTI and electrical characteristics by ozone pre-treatment and PBTI issues in HfAlO(N) high-k gate dielectrics

Improvement of NBTI and electrical characteristics by ozone ...

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International Electron Devices Meeting (IEDM)

作者： Seok Joo Doh Hyung-Suk Jung Yun-Seok Kim Ha-Jin Lim Jong Pyo Kim Jung Hyoung Lee Jong-Ho Lee Nae-In Lee Ho-Kyu Kan Kwang-Pyuk Suh Seong Geon Park Sang Bom Kang Gil Heyun Choi Young-Su Chung Hion-Suck Baikz Hdyo-Sik Chang Mann-Ho Cho Dae-Won Moon Hong Bae Park Moonju Cho Cheol Seong Hwang Advanced Process Development Project System LSI Business Samsung Electronics Co. Ltd Yongin Kyunggi-Do Korea Process Development Team 2 Semiconductor R & D Center Samsung Electronics Co. Ltd South Korea AE Center Samsung Advanced Institute of Technology South Korea AE Center Samsung Advanced Institute of Technology Nano Surface group Korea Research Institute of Standard and Science South Korea Nano Surface group Korea Research Institute of Standard and Science School of Materials Science and Engineering Seoul National University Seoul Korea

ISBN: (纸本)0780378725

For the first time, we have investigated the effect of ozone (O/sub 3/) pre-treatment on the bias temperature instability (BTI) characteristics of high-k gate dielectrics. We found that O/sub 3/ pre-treatment improved NBTI and the electrical characteristics of HfAlON gate dielectric. We suggest that O/sub 3/ pre-treatment effectively suppresses the incorporation of the impurities (such as nitrogen (N), hydrogen (H) and water related species), resulting in the improvement of NBTI characteristics (-2.32 V operating voltage for 10 years lifetime). For the PBTI characteristics, the high-k gate dielectric with poly-Si gate electrode was severely degraded. We suggest that dopants (such as arsenic (As) and phosphorus (P)) in the gate electrode of nMOSFETs diffuse into the gate dielectrics, causing the severe degradation of PBTI characteristics (/spl sim/1.1 V operating voltage for 10 years lifetime). We believe that the optimization in the high-k gate stack can improve the PBTI characteristics by suppressing the dopants incorporation.

关键词： Niobium compounds Titanium compounds Electric variables Dielectrics Voltage Electrodes Degradation Temperature Impurities Nitrogen

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development of single-chip fuzzy controller based on FFSI in binary

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Journal of Harbin institute of Technology(New Series) 2003年第3期10卷 269-274页

作者：张吉礼欧进萍孙德兴 School of Municipal and Environmental Engineering Harbin Institute of Technology Harbin 150090 China School of the Civil Engineering Harbin Institute of Technology Harbin 150090 China School of Municipal and Environmental Engineering Harbin Institute of Technology Harbin 150090 Chinaength and concise structure of fuzzy logic reasoning program and its real-time reasoning characteristic have their effect on the performance of a digital single-chip fuzzy controller. The control effect of a digital fuzzy controller based on looking up fuzzy control responding table is only relative to the table and not relative to the fuzzy control rules in the practical control process. Aiming at above problem and having combined fuzzy log-ic reasoning with digital operational characteristics of a single-chip microcomputer functioning-fuzzy-subset inference (FFSI) in binary in which triangle membership functions of error and error-in-change are all represented in binary and singleton membership functions of control variable is binary too has been introduced. The circuit principle plans of a single-chip fuzzy controller have been introduced for development of its hardware and the primary program structure fuzzy logic reasoning subroutine serial communication subroutine with PC and reliability design of the fuzzy controller are all discussed in detail. The control of indoor temperature by a fuzzy controller has been conducted using a testing-room thermodynamic system. Research results show that the FFSI in binary can exercise a concise fuzzy control in a single-chip fuzzy controller and the fuzzy controller is therefore reliable and possesses a high performance-price ratio.

Length and concise structure of fuzzy logic reasoning program and its real-time reasoning characteris-tic have their effect on the performance of a digital single-chip fuzzy controller. The control effect of a digitalfuzzy controller based on looking up fuzzy control responding table is only relative to the table and not relative tothe fuzzy control rules in the practical control process. Aiming at above problem and having combined fuzzy log-ic reasoning with digital operational characteristics of a single-chip microcomputer, functioning-fuzzy-subset in-ference (FFSI) in binary, in which triangle membership functions of error and error-in-change are all represen-ted in binary and singleton membership functions of control variable is binary too, has been introduced. The cir-cuit principle plans of a single-chip fuzzy controller have been introduced for development of its hardware, andthe primary program structure, fuzzy logic reasoning subroutine, serial communication subroutine with PC andreliability design of the fuzzy controller are all discussed in detail. The control of indoor temperature by a fuzzycontroller has been conducted using a testing-room thermodynamic system. research results show that the FFSIin binary can exercise a concise fuzzy control in a single-chip fuzzy controller, and the fuzzy controller is there-fore reliable and possesses a high performance-price ratio.

关键词： functioning-fuzzy-subset inference single-chip fuzzy controller testing-room thermodynamic system indoor temperature experiment

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Highly cross-linked polysilane as antireflective coating for deep ultraviolet lithography to improve durability during SiO2 etching

Journal of Vacuum Science & Technology B: Microelectronics a...

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Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures processing, Measurement, and Phenomena 2002年第3期20卷 909-913页

作者： Yasuhiko Sato Eishi Shiobara Yasunobu Onishi Sawako Yoshikawa Yoshihiko Nakano Shuzi Hayase Yoshitaka Hamada Process and Manufacturing Engineering Center Toshiba Corporation 8 Shinsugita-cho Isogo-ku Yokohama 235-8522 Japan Corporate Research and Development Center Toshiba Corporation 1 Komukai Toshiba-cho Saiwai-ku Kawasaki 210-0901 Japan Graduate School of Life Science and Systems Engineering Kyushu Institute of Technology 1-1 Hibikino Wakamatsu-ku Kitakyushu 808-01906 Japan Silicone-Electronics Materials Research Center Shin-Etsu Chemical Company Limited 1-10 Hitomi Matsuida-machi Usui-gun Gunma 379-0224 Japan

Highly cross-linked polysilanes were recently investigated in an attempt to improve drawbacks of bottom antireflective coatings (BARCs) composed of loosely cross-linked polysilanes that are used for deep ultraviolet (UV) lithography. A highly cross-linked structure was prepared by thermally crosslinking poly(phenylmethylsilane-co-methylhydrosilane-co-methysilyne) with m-diethynylbenzene during baking after coating. Resist profiles are achieved on it without producing a foot or leaving residue at the bottom of the resist. The refractive indices at the KrF excimer laser wavelength (248 nm) are n=1.93 and k=0.32. The reflection is reduced 0.9% regardless of variation in the thickness of the substrate. Highly cross-linked polysilanes improve the melting of loosely cross-linked polysilanes during BARC etching. They also improve the surface roughness of loosely cross-linked polysilanes after substrate (-SiO2) etching. The etch selectivity of the highly cross-linked polysilane BARC/resist during BARC etching is 2.1, which is higher than that of organic BARC/resist (∼1). The etch resistance of the highly cross-linked polysilane during substrate etching is 1.1 times greater than that of the resist. Highly cross-linked polysilanes can not only be etched with high selectivity against resist but can also be superior etch mask for substrate etching.

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