The CORDIC algorithm is used in many fields of signal processing for computation of elementary functions. Its main advantages are versatility and simplicity. When implemented in a word parallel pipeline it yields the ...
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The CORDIC algorithm is used in many fields of signal processing for computation of elementary functions. Its main advantages are versatility and simplicity. When implemented in a word parallel pipeline it yields the highest possible throughput. However this solution is accompanied with increased hardware complexity and chip area requirements. The goal of this paper is to develop redundant CORDIC pipeline architectures yielding very low chip area. The speed does not decrease at all when compared with other proposals. Our novel architectures result in the smallest redundant CORDIC implementation known to the authors. It also exhibits considerably less gate switching activity thus also reducing power consumption.
This paper proposes a method for diagnosing logic design errors in gate-level combinational circuits, and discusses how to correct them. Some previously proposed design error models are explained at gate-level. This d...
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Multi-junction silicon light emitting devices (Si LED's) were designed and realised by using standard 1.2 micron and 2 micron CMOS processes with a bipolar capability and with no modifications to the processes. Th...
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Multi-junction silicon light emitting devices (Si LED's) were designed and realised by using standard 1.2 micron and 2 micron CMOS processes with a bipolar capability and with no modifications to the processes. The designs were optimised to increase the power conversion efficiency, quantum conversion efficiency, intensity of emission and also the uniformity of emission. The devices emit light of several nW per 5 to 10 mA at 4-30 V in the 450 to 850 nm wavelength range. All the devices operated with at least one pn junction in the field emission or avalanche breakdown mode. Quantum conversion efficiencies of up to 1/spl times/10/sup -5/ have been measured which is two and a half orders to three orders of magnitude higher than previously published values for light emission from Si p-n avalanching junctions. Some directional light emission characteristics were also observed. The developed devices are viable for on-chip electro-optical applications and also for high speed chip-to-environment electro-optical applications.
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