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Fully integrable one-dimensional nonlinear wave equation: Solution of a general initial value problem

Partial Differential Equations in Applied Mathematics 2022年 5卷

作者： Trifonov, E.V. Institute of Automation and Control Processes FEB RAS Radio 5 Vladivostok 690041 Russian Federation

A new integrable case of the one-dimensional nonlinear wave equation was found. A general solution for this case depending on two arbitrary functions was derived. The functional form of the speed of sound can be used to model weak nonlinear waves in non-dispersive media. For the initial value problem the nonlinear generalization of the d'Alembert’s formula was obtained. © 2022 The Author(s)

关键词： Arbitrary functions Exact solutions General solution Nonlinear waves Riemann invariants Wave equation

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Magnetotransport in the double-atomic-layer rect-7×3-In phase on Si(111)

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Physical Review B 2023年第19期107卷 195305-195305页

作者： N. V. Denisov A. V. Matetskiy A. N. Mihalyuk D. V. Gruznev A. V. Zotov A. A. Saranin Institute of Automation and Control Processes FEB RAS Vladivostok 690041 Russia Instituto di Structtura della Materia Consiglio Nazionale delle Ricerche I-34149 Trieste Italy Institute of High Technologies and Advanced Materials Far Eastern Federal University Vladivostok 690950 Russia

Magnetoresistance of the double-atomic-layer rect-7×3-In/Si(111) phase was measured in situ using the four-point-probe technique in the temperature range from 2.5 to 33 K and magnetic fields from −8 to +8 T. The rect-7×3-In/Si(111) was found to demonstrate a classical quadratic behavior of magnetoresistance at fields lower than ∼0.2 T, and a large positive linear magnetoresistance at fields up to 8 T in the low-temperature range of up to ∼10 K. In contrast, the results obtained on the parent single- and double-atomic In layers formed on the NiSi2/Si(111) substrate show much lower values of magnetoresistance. In view of the density functional theory calculation results, which reveal the presence of tiny Fermi pockets in the rect-7×3-In/Si(111) electronic band structure, we attribute the observed large linear magnetoresistance at the low-temperature range to a quantum mechanical origin.

关键词： Electrical conductivity First-principles calculations Magnetoresistance Magnetotransport 2-dimensional systems Surfaces Resistivity measurements

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Comparison Study of Different Types of Setting Reference Movements for Mechatronic Objects by Parametric Splines

Comparison Study of Different Types of Setting Reference Mov...

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Ocean Studies (ICOS), International Conference on

作者： Anton Gubankov Igor Gornostaev Robotics Laboratory Institute of Automation and Control Processes FEB RAS Sevastopol State University Vladivostok Sevastopol Russia Laboratory of Robotic Systems Institute of Marine Technology Problems FEB RAS Vladivostok Russia

ISBN: (纸本)9781665473736

The paper presents a comparative study of various ways of specifying program movements for mechatronic objects (MO) along complex spatial trajectories defined by parametric Bezier splines, B-splines and third-order Catmull-Rom splines. An expression is obtained to describe the dependence of the rate of change of the parameter setting the desired position of the MO with the program speed of its movement, taking into account information about the type of trajectory. As a result, using this expression, which is universal for all the specified parametric splines of the third order, it is ensured that the MO moves along the trajectory exactly at a given speed while simultaneously changing its orientation as desired. The application of the methods considered in this paper does not require complex iterative calculations and allows one to perform all the necessary calculations in real time, even on low-power on-board computers of various robots and robotic complexes. Numerical modeling was carried out to analyze the features of the use of these splines in solving practical problems.

关键词： Mechatronics Oceans Numerical simulation Real-time systems Mathematical models Trajectory Numerical models

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Pushing an Altermagnet to the Ultimate 2D Limit: Symmetry Breaking in Monolayers of GdAlSi

arXiv

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arXiv 2024年

作者： Parfenov, Oleg E. Averyanov, Dmitry V. Sokolov, Ivan S. Mihalyuk, Alexey N. Kondratev, Oleg A. Taldenkov, Alexander N. Tokmachev, Andrey M. Storchak, Vyacheslav G. National Research Center "Kurchatov Institute" Kurchatov Sq. 1 Moscow123182 Russia Institute of High Technologies and Advanced Materials Far Eastern Federal University Vladivostok690950 Russia Institute of Automation and Control Processes FEB RAS Vladivostok690041 Russia

Altermagnets have emerged as a class of materials combining certain ferromagnetic properties with vanishing net magnetization. This combination is highly promising for spintronics, especially if a material can be brought to a nanoscale size. However, experimental studies of the 2D limit of altermagnets and evolution of their properties with thickness are lacking. Here, we study epitaxial films on silicon of the Weyl altermagnet GdAlSi ranging from more than a hundred unit cells to a single unit cell. The films are synthesized by molecular beam epitaxy and, expectedly, do not show any discernible net magnetic moments. Electron transport studies reveal a remarkable transformation of the electron state with the film thickness. Thick films exhibit negative longitudinal magnetoresistance associated with the chiral anomaly but do not demonstrate altermagnetic properties in electron transport due to symmetry restrictions. In ultrathin films, a spontaneous anomalous Hall effect manifests itself, indicating a non-relativistic spin splitting in the electronic structure. The transformation is associated with crystal symmetry breaking accompanying the 3D-to-2D crossover. The work highlights the role of dimensionality in altermagnetism and provides a platform for studies of altermagnets aiming at ultra-compact spintronics. © 2024, CC BY.

关键词： Molecular beam epitaxy

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Monolayer Magnetic Metal with Scalable Conductivity

arXiv

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arXiv 2024年

2D magnets have emerged as a class of materials highly promising for studies of quantum phenomena and applications in ultra-compact spintronics. Current research aims at design of 2D magnets with particular functional properties. A formidable challenge is to produce metallic monolayers: the material landscape of layered magnetic systems is strongly dominated by insulators;rare metallic magnets, such as Fe3GeTe2, become insulating as they approach the monolayer limit. Here, electron transport measurements demonstrate that the recently discovered 2D magnet GdAlSi – graphene-like AlSi layers coupled to layers of Gd atoms – remains metallic down to a single monolayer. Band structure analysis indicates the material to be an electride, which may stabilize the metallic state. Remarkably, the sheet conductance of 2D GdAlSi is proportional to the number of monolayers – a manifestation of scalable conductivity. The GdAlSi layers are epitaxially integrated with silicon, facilitating applications in electronics. © 2024, CC BY.

关键词： Monolayers

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Multilayer heterostructures with embedded crsi2 and β-fesi2 nanocrystals on si(111) substrate: From the formation to photoelectric properties 5th

Multilayer heterostructures with embedded crsi2 and β-fesi2...

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5th Asian School-Conference on Physics and Technology of Nanostructured Materials, ASCO-Nanomat 2020

作者： Galkin, Nikolay Galkin, Konstantin Subbotin, Evgeniy Chusovotin, Evgeniy Goroshko, Dmitrii Institute of Automation and Control Processes FEB RAS 5 Radio Street Vladivostok690041 Russia

ISBN: (纸本)9783035737936

The studies are devoted to the development of the technology of multilayer incorporation of nanocrystals (NCs) of semiconductor chromium and iron disilicides with a layer density no less than 2×1010 cm-2, the establishment of the growth mechanism of heterostructures with two types of NCs, the determination of their crystalline quality and optical properties, as well as the creation and study of rectification and photoelectric properties of p-i-n diodes based on them. Morphologically smooth heterostructures with 6 embedded layers of CrSi2 nanocrystals and two types of embedded nanocrystals (with 4 layers of CrSi2 NCs and 2 layers of β-FeSi2 NCs) for optical studies and built-in silicon p-i-n diodes were grown for the first time. The possibility of optical identification of interband transitions in embedded nanocrystals in the photon energy range of 1.2-2.5 eV was determined from the reflection spectra and the strongest peaks in reflection from the integrated nanocrystals were determined: 2.0 eV for CrSi2 NCs and 1.75 eV for β-FeSi2 NCs. The created p-i-n diodes have a contact potential difference of 0.95 V, regardless of the type of embedded NCs. At 80 K, an absorption band (0.7-1.1 eV) was detected in the diodes, which was associated with carrier photo generation in the embedded CrSi2 and β-FeSi2 NCs. From the spectra of the photoresponse at 80 K, the band gap widths in the NCs were determined: 0.50 eV in CrSi2 and 0.70 eV in the superposition of the CrSi2 and β-FeSi2 NCs. © 2020 Trans Tech Publications Ltd, Switzerland.

关键词： Heterojunctions

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The Small Deformation Assessment of the Integrated Fiber Optic by the Speckle Field Changes Using Siamese Neural Network

The Small Deformation Assessment of the Integrated Fiber Opt...

引用

International Conference on Optical Communications and Networks (ICOCN)

作者： A.A. Bryansky G.V. Grigorev A.S. Velichko X. Wei J. Xiong Center for Composite Materials and Structures Harbin Institute of Technology Harbin PR China Shenzhen International Graduate School Tsinghua University Shenzhen China School of Information Technology Cherepovets State University Cherepovets Russia Institute of Automation and Control Processes FEB RAS Vladivostok Russia

ISBN: (数字)9798350367652

ISBN: (纸本)9798350367669

Optical fibers sensors have various advantages for precise measurements of wide spectra of parameters. Currently, the deep-learning usage enhances the morphological analysis of the specklegram images. In this study, the design of the full-length optical fiber integration with firm pigtails fixation was used. The Siamese neural network with four convolutional and two fullyconnected layers per each tower was built for assessment of the deformation. The non-loaded specimen specklegram as the first input and image of the specklegram at the loaded state as the second input were used. The accuracy of the trained network with three sets of hyperparameters ranged from 77% to 82.8%.

关键词： Optical fibers Optical fiber sensors Accuracy Deformation Training data Artificial neural networks Optical fiber networks

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Interplay between magnetic order and electronic band structure in ultrathin GdGe2 metalloxene films

arXiv

引用

arXiv 2023年

作者： Matetskiy, Andrey V. Milotti, Valeria Sheverdyaeva, Polina M. Moras, Paolo Carbone, Carlo Mihalyuk, Alexey N. Strada Statale 14 km 163.5 Trieste34149 Italy Institute of Automation and Control Processes FEB RAS Vladivostok690041 Russia Institute of High Technologies and Advanced Materials Far Eastern Federal University Vladivostok690950 Russia

Dimensionality can strongly influence the magnetic structure of solid systems. Here, we predict theoretically and confirm experimentally that the antiferromagnetic (AFM) ground state of bulk gadolinium germanide metalloxene, which has a quasi-layered defective GdGe2 structure, is preserved in the ultrathin film limit. Ab initio calculations demonstrate that ultrathin GdGe2 films present in-plane intra-layer ferromagnetic coupling and AFM inter-layer coupling in the ground state. Angle-resolved photoemission spectroscopy finds the AFM-induced band splitting expected for the 2 and 3 GdGe2 trilayer (TL) films, which disappear above the Néel temperature. The comparative analysis of isostructural ultrathin DyGe2 and GdSi2 films confirms the magnetic origin of the observed band splitting. These findings are in contrast with the recent report of ferromagnetism in ultrathin metalloxene films, which we ascribe to the presence of uncompensated magnetic moments. Copyright © 2023, The Authors. All rights reserved.

关键词： Magnetic moments

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The use of partial discharge models in the diagnosis of high-voltage equipment

The use of partial discharge models in the diagnosis of high...

引用

2020 IEEE Power and Energy Student Summit, PESS 2020

作者： Kinsht, Nikolay Petrunko, Natalya Tetiora, Sergey Silin, Nikolay Institute of Automation and Control Processes FEB RAS Vladivostok Russia School of Engineering FEFU Vladivostok Russia

ISBN: (纸本)9783800753383

The characteristics of partial discharges (PD) which make possible to draw conclusions about the technical condition of high-voltage equipment (HVE) are considered. The efficiency and feasibility of applying different partial discharge models to assess the technical state of the HVE are analyzed. Existing uncertainties in the theory of PD such as the question of the real number of PD sources (potential defects) present in the insulation of HVE and creating a complex integrated picture of PD pulses are examined. The problem of differentiation of the integral picture of the PD is considered. The new PD model (called the quasi-deterministic PD model), in which partial discharge are presented as as the cause of transient processes, is proposed. The algorithm for the differentiation of an integral PD picture based on a quasi-deterministic model is described. Diagnostic capabilities that can be obtained by applying the proposed PD model to the analysis of PD processes are analyzed. © VDE VERLAG GMBH - Berlin - Offenbach.

关键词： Partial discharges

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Enhancement of Photoluminescence of Colloidal Quantum Dots in Plasmonic Metasurfaces Supporting Bound State in the Continuum

Enhancement of Photoluminescence of Colloidal Quantum Dots i...

引用

Progress in Electromagnetic Research Symposium (PIERS)

作者： A. Seredin K. Baryshnikova M. Petrov A. Sergeev D. Pavlov A. Kuchmizhak K. Sergeeva A. Sokolova A. Rogach School of Physics and Engineering ITMO University Saint-Petersburg Russia Institute of Automation and Control Processes of the FEB RAS Vladivostok Russia Pacific Quantum Center Far Eastern Federal University Vladivostok Russia City University of Hong Kong Hong Kong SAR China

ISBN: (数字)9798350375909

ISBN: (纸本)9798350375916

Quantum dot synthesis is an increasingly popular technology for the development of optoelectronic devices [1]. Specifically, colloidal quantum dots have shown promise in the infrared range, offering opportunities for the advancement of telecommunications and the creation of infrared light-emitting diodes [2]. One possible approach to enhance the interaction between light and matter is through the use of nanostructures, such as plasmon resonances [3]. However, plasmon resonances often suffer from low quality factors due to internal losses. To overcome this limitation, researchers have explored the use of periodic plasmonic systems, which can significantly increase the quality factors of existing modes [3]. Additionally, metasurfaces, which possess bound states in the continuum (BIC), offer the advantage of infinite radiative quality factors [4]. In this context, a recent study focused on the efficient tuning of a plasmonic metasurface that supports bound states in the continuum. This tuning approach aims to enhance the photoluminescence of HgTe colloidal quantum dots in the infrared region. By leveraging the technological simplicity of this plasmonic metasurface, the researchers were able to achieve improved performance in terms of photoluminescence. Overall, this work demonstrates the potential of plasmonic metasurfaces and bound states in the continuum for enhancing the interaction between light and matter in quantum dot systems. This research opens up new avenues for the development of advanced infrared optoelectronic devices with improved performance and scalability.

关键词： Q-factor Performance evaluation Printing Scalability Quantum dots Photoluminescence Plasmons

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