An increase of the conductivity in the low temperature range has been observed for Si/Mg2Si/Si(111) heterosystems with embedded Mg 2Si nanocrystals (NCs) and/or twodimensional (2D) Mg2Si layer. The models of conductiv...
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Multilayer structures (up to 15 layers) with β-FeSi2 nanocrystallites (NCs) buried in silicon crystalline lattice were grown by repetition of reactive deposition epitaxy (RDE) or solid phase epitaxy (SPE) of thin iro...
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This work is devoted to developing tools for the visual analysis of tropical cyclones based on satellite data. The implemented system has an extensible set of algorithms for the loading, processing and visualization o...
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This work is devoted to developing tools for the visual analysis of tropical cyclones based on satellite data. The implemented system has an extensible set of algorithms for the loading, processing and visualization of data, mainly the spatial scalar fields. The wellknown algorithms and author's developments using CUDA technology, and shaders were used in creation of visualization system.
This paper describes the system of telecontrol by multi-link manipulator. This system allows carrying out objects grasp by the manipulator in an automatic mode using known position and orientation of these objects. Th...
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Influence of thickness of magnesium coverage deposited at room temperature and 100 OC on the atomically-clean surface Si(5 5 12)-2x1 on the electrical properties and morphology of the sample was investigated. It was e...
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Influence of thickness of magnesium coverage deposited at room temperature and 100 OC on the atomically-clean surface Si(5 5 12)-2x1 on the electrical properties and morphology of the sample was investigated. It was established that deposition of Mg at room temperature results in formation of nanowires in the direction [–110] on silicon along narrow terraces formed after the high temperature cleaning of the substrate. The nanowires have high conductance leading to increasing of overall conductance on 13-15% at Mg thickness of 4 monolayers (0.8 nm). Growth of Mg at 100 OC results in the formation of disordered islands of magnesium silicide. In this case changing of conductance does not occur because of low conductivity of the silicide.
The paper presents a reflectometric technique for interrogation of multiple fiber Bragg grating (FBG) sensors based on conventional optical time domain reflectometry (OTDR). The method proposed rests on the differenti...
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The LEED patterns, electronic structure and morphology of Si(5 5 12) substrate surface were studied after different temperature cleaning procedures: high temperature (1250 oC), low temperature (900 oC) and cleaning at...
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The LEED patterns, electronic structure and morphology of Si(5 5 12) substrate surface were studied after different temperature cleaning procedures: high temperature (1250 oC), low temperature (900 oC) and cleaning at 800 oC in low silicon atom flow. The low temperature annealing without using of Si flow has been determined as the optimal cleaning procedure for Si(5 512) substrate.
Multilayer structures (up to 15 layers) with β-FeSi2 nanocrystallites (NCs) buried in silicon crystalline lattice were grown by successive repetition of reactive deposition epitaxy (RDE) or solid phase epitaxy (SPE) ...
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The growth of silicon cap layers atop Mg 2 Si nanocrystallites (NCs) and Mg 2 Si two-dimensional layer with structure (2/3√3×2/3√3)-R30° were studied by methods of AES, EELS, AFM, optical and Raman spectro...
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The growth of silicon cap layers atop Mg 2 Si nanocrystallites (NCs) and Mg 2 Si two-dimensional layer with structure (2/3√3×2/3√3)-R30° were studied by methods of AES, EELS, AFM, optical and Raman spectroscopy. It was established that method of solid phase epitaxy (SPE) ensures the embedding of Mg 2 Si NCs in polycrystalline quality silicon cap layer at temperatures not higher than 920 K. The increase of the temperature higher than 970 K results to the moving of silicide NCs toward the surface between silicon grains in cap layer, following their destruction and Mg desorption from the surface. The MBE method with temperatures 430–485 K was used to the embedding of continuous 2D Mg 2 Si layer with structure (2/3√3×2/3√3)-R30° in silicon top layer (9–20 nm) with monocrystalline grains. Investigations of thermoelectrical properties of grown nanoheterostructures have shown that a Seebeck coefficient ( α ∼ 130 μ V / K ) increases in ten times as compared with undoped silicon substrate ( α = 10 – 15 μ V / K ).
Adaptive interferometry with photorefractive (PR) crystals [1] is well known as robust and effective measuring technique for detection of quite small physical quantities (e.g. ultra-weak vibrations with amplitude of 1...
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