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Heterogeneously integrated quantum-dot emitters efficiently driven by a quasi-BIC-supporting dielectric nanoresonator

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Photonics Research 2022年第8期10卷 1971-1977页

作者： LI LIU RUXUE WANG XUYI ZHAO WENFU YU YI JIN QIAN GONG AIMIN WU State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information TechnologyChinese Academy of SciencesShanghai 200050China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100049China Key Laboratory of Terahertz Solid State Technology Shanghai Institute of Microsystem and Information TechnologyChinese Academy of SciencesShanghai 200050China Centre for Optical and Electromagnetic Research and International Research Center for Advanced Photonics College of Optical Science and EngineeringZhejiang UniversityHangzhou 310058China

Bound states in the continuum(BICs) can make subwavelength dielectric resonators sustain low radiation leakage, paving a new way to minimize the device size, enhance photoluminescence, and even realize lasing. Here, we present a quasi-BIC-supporting Ga As nanodisk with embedded In As quantum dots as a compact bright on-chip light source, which is realized by heterogeneous integration, avoiding complex multilayered construction and subsequent mismatch and defects. The emitters are grown inside the nanodisk to match the mode field distribution to form strong light–matter interaction. One fabricated sample demonstrates a photoluminescence peak sustaining a quality factor up to 68 enhanced by the quasi-BIC, and the emitting effect can be further promoted by improving the epilayer quality and optimizing the layer-transferring process in the fabrication. This work provides a promising solution to building an ultracompact optical source to be integrated on a silicon photonic chip for high-density integration.

关键词： emitter resonator dielectric

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Dark-Pulse Kerr Comb Enabled Ultrafast Terahertz Wireless Communication

Dark-Pulse Kerr Comb Enabled Ultrafast Terahertz Wireless Co...

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Conference on Lasers and Electro-Optics (CLEO)

作者： Yi Zheng Deming Kong Shi Jia Liping Zhou Chengli Wang Ailun Yi Michael Galili Toshio Morioka Kresten Yvind Xin Ou Leif Katsuo Oxenløwe Minhao Pu Department of Electrical and Photonics Engineering DTU Electro Technical University of Denmark DK-2800 Kgs. Lyngby Denmark State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences Shanghai China

We demonstrate the first dark-pulse Kerr comb in the SiCOI platform and its application for terahertz wireless communication with 100.78 Gbit/s net rate per spatial channel over a 10-meter free space distance.

ISBN: (纸本)9798350369311

关键词： Wireless communication Lasers and electrooptics Electro-optical waveguides

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Fabrication of Uniaxially/Biaxially Tensile-Strained Ge by Strain Redistribution Method for Photoelectric Detection Application

SSRN

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SSRN 2023年

作者： Li, Hongxiang Zhang, Qian Liu, Guanyu Mu, Zhiqiang Wei, Xing Gao, Yuyong Jiang, Haitao Zhang, Miao Wang, Ding Xue, Zhongying School of Materials and Chemistry University of Shanghai for Science and Technology Shanghai200090 China State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences Shanghai200050 China Shanghai Industrial μTechnology Research Institute Shanghai201899 China

Tensile strain is a widely discussed method to improve electron mobility and luminescence of Ge and has been applied in infrared photodetectors. By combining thin film crimping technology with microelectronic processing technology, uniaxial or biaxial tensile strain is achieved in a suspended Ge micro-bridge structure. The strain state can be manipulated by adjusting the sizes of the patterns, and the uniaxial tensile strain of 3.46% and biaxial tensile strain of 0.31% have been demonstrated in this work, respectively. The three-dimensional finite element analysis proves that the tensile strain originates from the strain redistribution between W film and Ge micro-bridge structure, and the simulation results meet the experimental data very well. A high performance metal-semiconductor-metal photodetector with on/off ratio of 713 and responsivity of 0.58 A/W was achieved by using the biaxially tensile-strained Ge micro-bridge, manifesting the advantages of this approach in photoelectric detection field. © 2023, The Authors. All rights reserved.

关键词： Tensile strain

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Fabrication and characterization of on-chip silicon spherical-like microcavities with high Q-factors

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Chinese Optics Letters 2022年第11期20卷 26-30页

作者： Hailong Han Hao Li Lixing You Xiaoping Liu State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information Technology(SIMIT)Chinese Academy of Sciences(CAS)Shanghai 200050China CAS Center for Excellence in Superconducting Electronics(CENSE) Shanghai 200050China School of Physical Science and Technology ShanghaiTech UniversityShanghai 201210China

An effective way to fabricate high-quality(Q)silicon microcavities on-chip is proposed and *** fabrication technique consists of two significant steps:(1)patterning a special silicon micro-pillar by Bosch processes and(2)subsequent reflow of the pillar into a spherical-like microcavity using a laser pulse at 532 *** shape and surface roughness are characterized using a scanning electron microscope and an atomic force *** root-mean-square roughness of the surface is about 0.6 nm.A representative value for the loaded Q-factors of our silicon spherical-like microcavities is on the order of 10^(5).

关键词： optical microcavity whispering gallery mode high Q-factor

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Photonic crystal nanobeam cavities based on 4H-silicon carbide on insulator

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Chinese Optics Letters 2022年第3期20卷 24-29页

作者： Liping Zhou Chengli Wang Ailun Yi Chen Shen Yifan Zhu Kai Huang Min Zhou jiaxiang Zhang Xin Ou State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information TechnologyChinese Academy of SciencesShanghai 200050China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100049China X0I Technology Co. Ltd.Shanghai 201899China

The 4H-silicon carbide on insulator(4H-SiC0l)has recently emerged as an attractive material platform for integrated photonics due to its excellent quantum and nonlinear optical ***,we experimentally realize one-dimensional photonic crystal nanobeam cavities on the ion-cutting 4H-SiC0l *** cavities exhibit quality factors up to 6.1×10^(3)and mode volumes down to 0.63×[λ/n]^(3)in the visible and near-infrared wavelength ***,by changing the excitation laser power,the fundamental transverse-electric mode can be dynamically tuned by 0.6 nm with a tuning rate of 33.5 pm/*** demonstrated devices offer the promise of an appealing microcavity system for interfacing the optically addressable spin defects in 4H-SiC.

关键词： photonic crystal cavities silicon carbide thermo-optic effect

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Heterogeneous integration of GaSb layer on(100)Si substrate by ion-slicing technique

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Chinese Physics B 2022年第7期31卷 442-447页

作者： Ren-Jie Liu Jia-Jie Lin Zheng-Hao Shen Jia-Liang Sun Tian-Gui You Jin Li Min Liao Yi-Chun Zhou Key Laboratory of Low Dimensional Materials and Application Technology of Ministry of Education School of Materials Science and EngineeringXiangtan UniversityXiangtan 411105China Hunan Provincial Key Laboratory of Thin Film Materials and Devices School of Materials Science and EngineeringXiangtan UniversityXiangtan 411105China College of Information Science and Engineering Jiaxing UniversityJiaxing 314001China State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information TechnologyChinese Academy of Science(CAS)Shanghai 200050China Beijing Semicore ZKX Electronics Equipment Co. LtdBeijing 100000China

Integration of the high-quality Ga Sb layer on an Si substrate is significant to improve the Ga Sb application in optoelectronic *** this work,a suitable ion implantation fluence of 5×10^(16)-cm^(-2)H ions for Ga Sb layer transfer is *** the strain change and the defect evolution,the blistering and exfoliation processes of Ga Sb during annealing is revealed in *** the direct wafer bonding,the Ga Sb layer is successfully transferred onto a(100)Si substrate covered by 500-nm thickness thermal oxide SiO_(2)*** being annealed at 200℃,the Ga Sb layer shows high crystalline quality with only 77 arcsec for the full width at half maximum(FWHM)of the x-ray rocking curve(XRC).

关键词： ion-slicing technique heterogeneous integration GaSbOI

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Photoemission Spectroscopic Evidence of Multiple Dirac Cones in Superconducting BaSn_(3)

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Chinese Physics Letters 2021年第10期38卷 43-48页

作者： Zhe Huang Xianbiao Shi Gaoning Zhang Zhengtai Liu Soohyun Cho Zhicheng Jiang Zhonghao Liu Jishan Liu Yichen Yang Wei Xia Weiwei Zhao Yanfeng Guo Dawei Shen Center for Excellence in Superconducting Electronics State Key Laboratory of Functional Materials for InformaticsShanghai Institute of Microsystem and Information TechnologyChinese Academy of SciencesShanghai 200050China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100049China School of Physical Science and Technology Shanghai Tech UniversityUniversityShanghai 201210 State Key Laboratory of Advanced Welding and Joining Harbin Institute of TechnologyShenzhen 518055China Flexible Printed Electronics Technology Center Harbin Institute of TechnologyShenzhen 518055China Shanghai Tech Laboratory for Topological Physics Shanghai Tech UniversityShanghai 201210China

Signatures of topological superconductivity(TSC)in superconducting materials with topological nontrivial states prompt intensive researches *** high-resolution angle-resolved photoemission spectroscopy and first-principles calculations,we demonstrate multiple Dirac fermions and surface states in superconductor BaSn_(3) with a critical transition temperature of about 4.4 *** predict and then unveil the existence of two pairs of type-Ⅰtopological Dirac fermions residing on the rotational ***-ⅡDirac fermions protected by screw axis are confirmed in the same *** calculation for the spin helical texture of the observed surface states originating from the Dirac fermions gives an opportunity for realization of TSC in one single *** multiple Dirac fermions and topological surface states,the intrinsic superconductor BaSn_(3) is expected to be a new platform for further investigation of topological quantum materials as well as TSC.

关键词： material topological Dirac

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MatHub-2d:二维材料输运数据库及其高迁移率二维半导体材料高通量筛选应用

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Science China Materials 2023年第7期66卷 2768-2776页

作者：姚明佳计嘉琳李鑫朱振宇葛军饴 David J.Singh 奚晋扬杨炯张文清 Materials Genome Institute Shanghai UniversityShanghai 200444China State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information TechnologyChinese Academy of SciencesShanghai 200050China Zhejiang Laboratory Hangzhou 311100China Department of Physics and Astronomy University of MissouriColumbiaMO 65211USA Department of Materials Science and Engineering and Shenzhen Institute for Quantum Science&Technology Southern University of Science and TechnologyShenzhen 518055China Shenzhen Municipal Key-Lab for Advanced Quantum Materials and Devices and Guangdong Provincial Key Lab for Computational Science and Materials Design Southern University of Science and TechnologyShenzhen 518055China

近些年来二维材料因其独特的物理化学性质引起了广泛关注.载流子迁移率是材料在电子设备应用中最重要的特性之一.在本文中,我们介绍了如何通过高通量计算筛选来发现高迁移率二维半导体材料.基于最近开发的MatHub-2d数据库(包含约1900个... 详细信息

近些年来二维材料因其独特的物理化学性质引起了广泛关注.载流子迁移率是材料在电子设备应用中最重要的特性之一.在本文中,我们介绍了如何通过高通量计算筛选来发现高迁移率二维半导体材料.基于最近开发的MatHub-2d数据库(包含约1900个二维材料的结构信息及其第一性原理计算结果),以带隙、磁性、弹性模量和形变势作为搜索标准,通过初步筛选,得到133个候选者.对这些体系,我们使用形变势方法和玻尔兹曼输运理论预测了迁移率.最终,我们预测19种二维材料在室温下(300 K)具有高迁移率(>10^(3)cm^(-2)V^(-1)s^(-1))和良好的稳定性.这些材料高迁移率的来源主要是较小的形变势常数、较大的弹性模量,以及较小的有效质量.其中有两种类型的化合物值得关注,BX(X=P,As,Sb)和ZO_(2)(Z=Ge,Sn,Pb),它们具有面内各向同性高迁移率.BX中“flower-like”化学键有利于p型和n型电输运,而Z-O反键态是ZO_(2)型二维材料良好电子传导的原因.除了这些二维材料,Si_(2)P_(2)、Ga_(2)O_(2)、Ge_(2)N_(2)等同样也表现出高的电子迁移率.这些高迁移率二维材料在新型半导体电子器件中具有潜在的应用前景.

关键词： two-dimensional materials high-throughput computational screening MatHub-2d mobility

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Understanding fundamentals of electrochemical reactions with tender X-rays:A new lab-based operando X-ray photoelectron spectroscopy method for probing liquid/solid and gas/solid interfaces across a variety of electrochemical systems

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Chinese Journal of Catalysis 2022年第11期43卷 2858-2870页

作者： Chiyan Liu Qiao Dong Yong Han Yijing Zang Hui Zhang Xiaoming Xie Yi Yu Zhi Liu State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information TechnologyChinese Academy of SciencesShanghai 200050China Center for Transformative Science ShanghaiTech UniversityShanghai 201210China School of Physical Science and Technology ShanghaiTech UniversityShanghai 201210China University of Chinese Academy of Sciences Beijing 100049China

Electrocatalysis is key to improving energy efficiency,reducing carbon emissions,and providing a sustainable way of meeting global energy ***,elucidating electrochemical reaction mechanisms at the electrolyte/electrode interfaces is essential for developing advanced renewable energy ***,the direct probing of real-time interfacial changes,i.e.,the surface intermediates,chemical environment,and electronic structure,under operating conditions is challenging and necessitates the use of in situ ***,we present a new lab-based instrument commissioned to perform in situ chemical analysis at liquid/solid interfaces using ambient pressure X-ray photoelectron spectroscopy(APXPS).This setup takes advantage of a chromium source of tender X-rays and is designed to study liquid/solid interfaces by the“dip and pull”*** of the main components was carefully described,and the results of performance tests are *** a three-electrode setup,the system can probe the intermediate species and potential shifts across the liquid electrolyte/solid electrode *** addition,we demonstrate how this system allows the study of interfacial changes at gas/solid interfaces using a case study:a sodium–oxygen model ***,the use of APXPS in electrochemical studies is still in the early stages,so we summarize the current challenges and some developmental *** the challenges,we expect that joint efforts to improve instruments and the electrochemical setup will enable us to obtain a better understanding of the composition–reactivity relationship at electrochemical interfaces under realistic reaction conditions.

关键词： Tender X-rays Ambient pressure X-ray photoelectron spectroscopy Electrocatalysis Liquid/solid interface Gas/solid interface

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Flexible Graphene Transistor with Recorded Extrinsic Fmax

SSRN

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SSRN 2023年

作者： Wu, Yun Li, Zhonghui Yu, Guanghui Cao, Zhengyi Wei, Zhongxia Tao, Ran Gu, Chenyi Yu, Xinxin Zhang, Yanhui CETC Key Laboratory of Carbon-based Electronics Nanjing Electronic Device Institute Nanjing210016 China State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences Shanghai200050 China

Graphene is a very promising candidate for applications in flexible electronics due to its high carrier mobility and mechanical flexibility, but few suitable preparation methods for flexible RF devices have been found to date. In this paper, a novel preparation method for flexible transistor arrays based on CVD graphene and mica substrate preparation method which can significantly improve the performance was studied, which shown significant improvement of the device performance and the device shown a perfect compatibility between the good RF performances and the mechanical flexibility. The area of the device arrays reached 3cm×3cm, and the curvature radius can be as small as 5 mm. The on-state current density of 1.25 mA/μm at Vds=0.5V was much larger than other flexible transistors, and recorded extrinsic cutoff frequency (fT) of 66 GHz together with power-gain cutoff frequency (fmax) of 73 GHz for flexible graphene transistors were achieved. In addition, the DC and RF characteristics of transistors at different drain-source voltages Vds and temperatures indicate the dominant influence of self-heating and environmental temperature on the device performance, which is of great significance for further improving device performance. © 2023, The Authors. All rights reserved.

关键词： Graphene transistors

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