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高温亲水性键合结合离子束剥离技术制备晶圆级β-Ga_(2)O_(3)/SiC异质集成材料

Science China Materials 2023年第2期66卷 756-763页

作者：沈正皓徐文慧陈阳林家杰谢玉环黄凯游天桂韩根全欧欣 State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information TechnologyChinese Academy of SciencesShanghai 200050China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100049China College of Information Science and Engineering Jiaxing UniversityJiaxing 314001China The State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology School of MicroelectronicsXidian UniversityXi’an 710071China

将β-Ga_(2)O_(3)与高导热SiC衬底异质集成可以有效解决氧化镓高功率电子器件的散热问题.本文通过高温亲水性键合结合离子束剥离技术,将2英寸的高质量(201)β-Ga_(2)O_(3)单晶薄膜转移到了4H-SiC衬底上.为理解离子束剥离β-Ga_(2)O_(3)... 详细信息

将β-Ga_(2)O_(3)与高导热SiC衬底异质集成可以有效解决氧化镓高功率电子器件的散热问题.本文通过高温亲水性键合结合离子束剥离技术,将2英寸的高质量(201)β-Ga_(2)O_(3)单晶薄膜转移到了4H-SiC衬底上.为理解离子束剥离β-Ga_(2)O_(3)薄膜的物理机制,我们系统地研究了注氢β-Ga_(2)O_(3)表面起泡的演变过程及该过程中气泡内部的压力变化.采用有限元模拟预测合适的键合温度,通过将β-Ga_(2)O_(3)和4H-SiC晶圆在96℃的温度下进行高温亲水性键合,有效降低了离子束剥离过程中异质界面上的热应力,防止β-Ga_(2)O_(3)/4H-SiC键合对的解键合以实现薄膜的转移.X射线衍射结果表明,转移的β-Ga_(2)O_(3)薄膜具有窄的衍射峰半高宽,为79.2 arcsec.对薄膜进行化学机械抛光后,获得了极光滑的表面,均方根粗糙度仅0.1 nm.采用高温亲水性键合结合离子束剥离技术制备的β-Ga_(2)O_(3)/4H-SiC异质集成材料将成为开发高性能β-Ga_(2)O_(3)功率器件提供实用平台.

关键词：剥离技术功率电子器件化学机械抛光异质集成均方根粗糙度晶圆级氧化镓功率器件

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All-fiber mid-infrared supercontinuum generation with high coherence in chalcogenide fiber pumped by 2.8 µm Raman femtosecond solitons

引用

Infrared Physics and technology 2025年 148卷

作者： Zhang, Chunyu Song, Jian Zhang, Zhilin Xia, Kai Wei, Zibo Lv, Meng Mei, Chao Yang, PeiLong Peng, Xuefeng Xu, Peipeng Dai, Shixun Laboratory of Infrared Materials and Devices The Research Institute of Advanced Technologies Ningbo University Ningbo315211 China Department of Physics School of Physical Science and Technology Ningbo University Ningbo315211 China College of Science & Technology Ningbo University Ningbo315211 China Technology Innovation Center of Infrared Remote Sensing Metrology Technology State Administration for Market Regulation Beijing100029 China State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences Shanghai200050 China

We present an all-fiber mid-infrared supercontinuum (MIR-SC) generation in As2S3 chalcogenide glass fiber, powered by a 2.8 µm femtosecond laser generated through the soliton self-frequency shift (SSFS) effect in fluoride fiber. To ensure high-quality femtosecond laser pulse production, we thoroughly investigated the SSFS effect in three types of fibers using 2.0 µm femtosecond laser as pump source. Ultimately, we obtained 2.8 µm soliton pulses with an average power of 241 mW, a conversion efficiency of 42.5 % and a peak power reaching 36.5 kW in an 8 m-long ZrF4-BaF2-LaF3-AlF3-NaF (ZBLAN) fiber. By injecting the 2.8 µm pulses into a segment of As2S3 fiber, where this wavelength situated rightly in the normal dispersion region of this fiber, a SC spanning from 1.83 to 4.0 µm was generated with excellent spectral flatness. Furthermore, we simulated the spectral evolution of the pulses in the As2S3 fiber, the simulation results showing strong agreement with experimental observations. The spectral coherence factor |g12(1)| was estimated close to 1 across the entire spectral range, indicating a good coherence of this SC. © 2025 Elsevier B.V.

关键词： Femtosecond lasers

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Sampling timing jitter in dispersion-managed frequency microcombs via a fiber interferometer

Sampling timing jitter in dispersion-managed frequency micro...

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CLEO: Science and Innovations, S and I 2022

作者： Wang, Wenting Liu, Hao Melton, Tristan Yang, Jinghui Vinod, Abhinav Kumar Lim, Jinkang Jang, Yoon-Soo Zhou, Heng Yu, Mingbin Kwong, Dim-Lee DeVore, Peter Chou, Jason Wong, Chee Wei Fang Lu Mesoscopic Optics and Quantum Electronics Laboratory University of California Los AngelesCA90095 United States Key Lab of Optical Fiber Sensing and Communication Networks University of Electronic Science and Technology of China Chengdu611731 China Institute of Microelectronics A*STAR Singapore117865 Singapore State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information Technology Shanghai Industrial Technology Research Institute Shanghai China Lawrence Livermore National Laboratory LivermoreCA94550 United States

We characterized timing jitter of dispersion-managed frequency microcomb with femtosecond timing resolution through fiber interferometry for the first time. The measured timing jitter PSD and integrated timing jitter ... 详细信息

ISBN: (纸本)9781557528209

关键词： Timing circuits

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Selective coordination and localized polarization in graphene quantum dots: Detection of fluoride anions using ultra-low-field NMR relaxometry

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Chinese Chemical Letters 2021年第12期32卷 3921-3926页

作者： Yongqiang Li Yi Xiao Quan Tao Mengmeng Yu Li Zheng Siwei Yang Guqiao Ding Hui Dong Xiaoming Xie State Key Laboratory of Functional Materials of Informatics Shanghai Institute of Microsystem and Information TechnologyChinese Academy of Sciences(CAS)Shanghai 200050China CAS Center for Excellence in Superconducting Electronics(CENSE) Chinese Academy of SciencesShanghai 200050China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100049China

The development of ultra-sensitive methods for detecting anions is limited by their low charge to radius ratios, microenvironment sensitivity, and p H sensitivity. In this paper, a magnetic sensor is devised that exploits the controllable and selective coordination that occurs between a magnetic graphene quantum dot(GQD) and fluoride anion(F–). The sensor is used to measure the change in relaxation time of aqueous solutions of magnetic GQDs in the presence of F–using ultra-low-field(118 μT) nuclear magnetic resonance relaxometry. The method was optimized to produce a limit of detection of 10 nmol/L and then applied to quantitatively detect F–in domestic water samples. More importantly, the key factors responsible for the change in relaxation time of the magnetic GQDs in the presence of F–are revealed to be the selective coordination that occurs between the GQDs and F–as well as the localized polarization of the water protons. This striking finding is not only significant for the development of other magnetic probes for sensing anions but also has important ramifications for the design of contrast agents with enhanced relaxivity for use in magnetic resonance imaging.

关键词： Graphene quantum dots Coordination Polarization Relaxometry Magnetic sensor Nuclear magnetic resonance Fluoride anion

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1002 km twin-field quantum key distribution with finite-key analysis

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Quantum Frontiers 2023年第1期2卷 1-7页

作者： Liu, Yang Zhang, Wei-Jun Jiang, Cong Chen, Jiu-Peng Ma, Di Zhang, Chi Pan, Wen-Xin Dong, Hao Xiong, Jia-Min Zhang, Cheng-Jun Li, Hao Wang, Rui-Chun Lu, Chao-Yang Wu, Jun Chen, Teng-Yun You, Lixing Wang, Xiang-Bin Zhang, Qiang Pan, Jian-Wei Hefei National Research Center for Physical Sciences at the Microscale and School of Physical Sciences University of Science and Technology of China Anhui Hefei 230026 China Jinan Institute of Quantum Technology and CAS Center for Excellence in Quantum Information and Quantum Physics University of Science and Technology of China Shandong Jinan 250101 China Hefei National Laboratory University of Science and Technology of China Anhui Hefei 230088 China State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences Shanghai 200050 China Photon Technology (Zhejiang) Co. Ltd. Zhejiang Jiaxing 314100 China State Key Laboratory of Optical Fibre and Cable Manufacture Technology Yangtze Optical Fibre and Cable Joint Stock Limited Company Hubei Wuhan 430073 China State Key Laboratory of Low Dimensional Quantum Physics Department of Physics Tsinghua University Beijing 100084 China

Quantum key distribution (QKD) holds the potential to establish secure keys over long distances. The distance of point-to-point QKD secure key distribution is primarily impeded by the transmission loss inherent to the channel. In the quest to realize a large-scale quantum network, increasing the QKD distance under current technology is of great research interest. Here we adopt the 3-intensity sending-or-not-sending twin-field QKD (TF-QKD) protocol with the actively-odd-parity-pairing method. The experiment demonstrates the feasibility of secure QKD over a 1002 km fibre channel considering the finite size effect. The secure key rate is 3.11×10⁻¹² per pulse at this distance. Furthermore, by optimizing parameters for shorter fiber distances, we conducted performance tests on key distribution for fiber lengths ranging from 202 km to 505 km. Notably, the secure key rate for the 202 km, the normal distance between major cities, reached 111.74 kbps. © The Author(s) 2023.

关键词： Quantum communication Quantum information Quantum key distribution Quantum optics

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Wafer-Scale Fabrication of Single-Crystalline Calcium Fluoride Thin-Film on Insulator by Ion-Cutting

SSRN

引用

SSRN 2024年

作者： Song, Qiudong Cai, Jiachen Wang, Chengli Zhou, Liping Chen, Yang Zhou, Min Zhang, Jian Yang, Bingcheng Yang, Yi Yi, Ailun You, Tiangui Ou, Xin School of Materials and Chemistry University of Shanghai for Science and Technology Shanghai200093 China State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences Shanghai200050 China The Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of Sciences Beijing100049 China

Developing bulk materials into thin-films not only enables multiple physical fields to interact strongly within a smaller volume but also enhances the stability, scalability, and integrability of the system. This transformation has been witnessed to lead to significant improvements in the performance of devices utilizing diverse materials across various fields. Calcium Fluoride (CaF2), with remarkable optical properties such as ultralow optical loss and strong nonlinear features, is a preferable material for building ultra-high-Q resonators and stimulating light-matter interaction with low threshold. However, the thin film integration of CaF2 material has remained elusive due to its physical instability. Here, an optimized ion-cutting technique is proposed for engineering CaF2 thin films theoretically and experimentally. Taking the thermal instability into consideration, we employ the Lithium niobate (LN) as substrate, and utilize accessible ion implantation, wafer bonding and precisely designed annealing process to attain the CaF2-LN and the CaF2-on-insulator (CaFOI) with high film thickness uniformity and maintained crystalline quality. The perspectives of our work are also illustrated by numerical simulation for further verifying the potential of integrated photonic applications, which could be extended to monolithic optical network by means of large-scale manufacturing method. © 2024, The Authors. All rights reserved.

关键词： Calcium fluoride

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用于制备具有超光滑表面异质集成4英寸硅基砷化镓薄膜的高效离子剥离技术

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Science China Materials 2023年第1期66卷 211-218页

作者：孙嘉良林家杰金婷婷池超旦周民 Robert Kudrawiec 李进游天桂欧欣 State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information TechnologyChinese Academy of SciencesShanghai 200050China University of Chinese Academy of Sciences Beijing 100049China College of Information Science and Engineering Jiaxing UniversityJiaxing 314001China Jiaxing Key Laboratory of Plasma and Ion Beam Technology Jiaxing 314100China Department of Semiconductor Materials Engineering Wroclaw University of Science and TechnologyWroclaw 50-370Poland Beijing Semicore ZKX Electronics Equipment Co. Ltd.Beijing 100176China

在Si衬底上将单晶GaAs薄膜与其进行异质集成有望为硅基光电集成提供新的材料平台.本文基于对GaAs材料剥离机理的分析阐述,优化了GaAs薄膜转移工艺的离子注入条件.结果表明,相比于He离子单独注入,由于较小的热预算和注入后相对更低的缺... 详细信息

在Si衬底上将单晶GaAs薄膜与其进行异质集成有望为硅基光电集成提供新的材料平台.本文基于对GaAs材料剥离机理的分析阐述,优化了GaAs薄膜转移工艺的离子注入条件.结果表明,相比于He离子单独注入,由于较小的热预算和注入后相对更低的缺陷密度,He/H离子共注入对于GaAs薄膜转移更高效.以Al2O3为键合介质层,通过优化的离子剥离技术成功地将4英寸GaAs薄膜转移到Si(100)衬底上.探索了包括化学机械抛光、臭氧辐照氧化和KOH清洗的表面处理工艺,以将转移后GaAs薄膜的表面质量提高到可以高质量外延的水平.在400℃退火1 h后,转移的GaAs薄膜单晶质量进一步提高,X射线摇摆曲线的半峰全宽仅为89.03 arcsec.

关键词：剥离技术化学机械抛光异质集成缺陷密度光电集成 GaAs薄膜离子注入表面处理工艺

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High-Efficiency Photo-Induced Charge Transfer for SERS Sensing in N-Doped 3D-Graphene on Si Heterojunction

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Energy & Environmental Materials 2024年第2期7卷 268-276页

作者： Guanglin Zhang Jie Sun Genwang Wei Shan Zhang Zhengyi He Huijuan Wu Bingkun Wang Siwei Yang Guqiao Ding Zhiduo Liu Zhiwen Jin Caichao Ye Gang Wang Department of Microelectronic Science and Engineering School of Physical Science and TechnologyNingbo UniversityNingbo 315211China Department of Biochemistry and Molecular Biology School of Basic Medical SciencesShenzhen UniversityShenzhen 518071China Academy for Advanced Interdisciplinary Studies&Department of Materials Science and Engineering Guangdong Provincial Key Laboratory of Computational Science and Material DesignSouthern University of Science and TechnologyShenzhen 518055China State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information TechnologyChinese Academy of SciencesShanghai 200050China Centre for Quantum Physics Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement(MOE)School of PhysicsBeijing Institute of TechnologyBeijing 100081China School of Physical Science and Technology&Key Laboratory for Magnetism and Magnetic Materials of the Ministry of Education Lanzhou UniversityLanzhou 730000China

Nitrogen-doped three-dimensional graphene(N-doped 3D-graphene)is a graphene derivative with excellent adsorption capacity,large specific surface area,high porosity,and optoelectronic ***,N-doped 3D-graphene/Si heterojunctions were grown in situ directly on silicon(Si)substrates via plasma-assisted chemical vapor deposition(PACVD),which is promising for surface-enhanced Raman scattering(SERS)substrates *** analyses of theoretical simulation,incorporating N atoms in 3D-graphene are beneficial to increase the electronic state density of the system and enhance the charge transfer between the substrate and the target *** enhancement of the optical and electric fields benefits from the stronger light-matter interaction improved by the natural nano-resonator structure of N-doped *** as-prepared SERS substrates based on N-doped 3D-graphene/Si heterojunctions achieve ultra-low detection for various molecules:10^(-8)M for methylene blue(MB)and 10^(-9)M for crystal violet(CRV)with rhodamine(R6G)of 10^(10)*** practical detected,10^(-8)M thiram was precisely detected in apple peel *** results indicate that N-doped 3D-graphene/Si heterojunctions based-SERS substrates have promising applications in low-concentration molecular detection and food safety.

关键词： charge transfer DFT simulation N-doped 3D-graphene SERS Thiram detection

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Thin film aluminum nitride surface acoustic wave resonators for quantum acoustodynamics

arXiv

引用

arXiv 2023年

作者： Jiang, Wenbing Chen, Junfeng Liu, Xiaoyu Niu, Zhengqi Liu, Kuang Peng, Wei Wang, Zhen Lin, Zhi-Rong State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences Shanghai200050 China University of Chinese Academy of Science Beijing100049 China ShanghaiTech University Shanghai201210 China

The quantum excitations of macroscopic surface acoustic waves (SAWs) have been tailored to control, communicate and transduce stationary and flying quantum states. However, the limited lifetime of this hybrid quantum systems remains critical obstacles to extend their applications in quantum information processing. Here we present the potentials of thin film aluminum nitride to on-chip integrate phonons with superconducting qubits over previous bulk piezoelectric substrates. We have reported high-quality thin film GHz-SAW resonators with the highest internal quality factor Qi of 5 × 104 at the single-phonon level. The internal losses of SAW resonators are systematically investigated with tuning the parameters of sample layout, power and temperature. Our results manifest that SAWs on piezoelectric films are readily integrated with standard fabrication of Josephson junction quantum circuits, and offer excellent acoustic platforms for the high-coherence quantum acoustodynamics architectures. Copyright © 2023, The Authors. All rights reserved.

关键词： Thin films

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Geometric origin of intrinsic dark counts in superconducting nanowire single-photon detectors

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Superconductivity 2022年第1期1卷 45-51页

作者： Xingyu Zhang Xiaofu Zhang Jia Huang Can Yang Lixing You Xiaoyu Liu Peng Hu You Xiao Wenying Zhang Yongliang Wang Lingyun Li Zhen Wang Hao Li State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information Technology(SIMIT)Chinese Academy of Sciences(CAS)865 Changning Rd.Shanghai 200050People’s Republic of China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100049People’s Republic of China CAS Center for Excellence in Superconducting Electronics 865 Changning Rd.Shanghai 200050People’s Republic of China

The dark count is one of the key physical issues for superconducting nanowire single-photon detectors(SNSPDs)that limits various applications for optical quantum information and classical *** the bias current approaches the switching current of SNSPDs,the dark count is actually dominated by the intrinsic dark counts(iDCs).However,the origin of iDCs and its relation to constrictions remains unclear for practical *** herein systematically characterize the iDCs of the SNSPDs with and without artificial geometric constrictions by applying the differential readout *** these devices with constrictions,we have observed distinct Gaussian distributions in the temporal distribution of iDCs,in which the time difference between the distributions is consistent with the geometric distance between constrictions,and the rates of iDCs produced by each constriction are in good agreement with constrictions'*** respect to practical SNSPDs,surprisingly,we also observe several Gaussian distributions in the temporal domain and it shows no significant dependence on the devices’sizes,demonstrating that the iDCs of SNSPDs are mainly dominated by a few specific constrictions.

关键词： Superconducting nanowire Single-photon detector Dark count Differential readout

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