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AgGeSbTe thin film as a negative heat-mode resist for dry lithography

Chinese Optics Letters 2022年第3期20卷 72-76页

作者： Xingwang Chen Lei Chen Ying Wang Tao Wei jing Hu Miao Cheng Qianqian Liu Wanfei Li Yun Ling Bo Liu Suzhou Key Laboratory for Nanophotonic and Nanoelectronic Materials and Its Devices School of Materials Science and EngineeringSuzhou University of Science and TechnologySuzhou 215009China State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information TechnologyChinese Academy of SciencesShanghai 200050China School of Electronic&Information Engineering Suzhou University of Science and TechnologySuzhou 215009China

An AgGeSbTe thin film is proposed as a negative heat-mode resist for dry *** possesses high etching selectivity with the etching rate difference of as high as 62 nm/min in CHF_(3)/O_(2)mixed *** etched sidewall is steep without the obvious lateral *** lithographic characteristics and underlying physical mechanisms are ***,results of X-ray diffraction,Raman spectroscopy,and X-ray photoelectron spectroscopy further indicate that laser irradiation causes the formation of Ge,Sb,and AgTe crystals,which is the basis of etching *** addition,the etching selectivity of Si to AgGeS_(b)Te resist is as high as 19 at SF_(6)/Ar mixed gases,possessing good etching *** is believed that the AgGeSbTe thin film is a promising heat-mode resist for dry lithography.

关键词： thin film heat-mode resist lithography

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The Integration of Polarization Splitter-Rotator and Photodetector in Optical Receiver 2

The Integration of Polarization Splitter-Rotator and Photode...

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2021 2nd International Workshop on Electronic communication and Artificial Intelligence, IWECAI 2021

作者： She, Xiaojuan Liao, Han Zhao, Yingxuan Zhu, Junbo Li, Yang Tao, Lue Zhu, Zijian Huang, Rui Liu, Xiang Qiu, Chao Huang, Haiyang Sheng, Zhen Gan, Fuwan State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences Shanghai200050 China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of Sciences Beijing100049 China

Because of high-index contrast Si/SiO2 system, polarization sensitivity is a severe problem in photonic integration devices. In this paper, we design a integration devices comprised of polarization splitter-rotator (PSR) and germanium photo detectors (PDs) on chip. The integration of PSR and PD can realize the integrated layout which can realize the measurement of PSR polarization properties. After calculation, the on-chip loss of the polarization beam splitter is 1.19dB, and the polarization isolation of the system is 14.59dB/5.141dB in TE0/TM0 mode. © Published under licence by IOP Publishing Ltd.

关键词： Integration

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Low-Noise Microwave Signal Generation by Heterodyning Two Narrow-Linewidth Self-Injection Locked Lasers

Low-Noise Microwave Signal Generation by Heterodyning Two Na...

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Conference on Lasers and Electro-Optics (CLEO)

作者： Yihao Fan Siyu E Yuyao Guo Xinhang Li Liangjun Lu Shuxiao Wang Yan Cai Jianping Chen Linjie Zhou Department of Electronic Engineering State Key Laboratory of Advanced Optical Communication Systems and Networks Shanghai Key Lab of Navigation and Location Services Shanghai Jiao Tong University Shanghai China SJTU-Pinghu Institute of Intelligent Optoelectronics Pinghu China State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences Shanghai China Shanghai Industrial μ Technology Research Institute Shanghai China

We realize a hybrid integrated self-injection locking laser (SIL) with an ultra-narrow intrinsic linewidth of 5 Hz. With heterodyne synthesis using a pair of SILs, a microwave signal with a 4-kHz linewidth is achieved.

ISBN: (纸本)9798350369311

关键词： Wireless communication Masers Microwave communication Microwave theory and techniques Hybrid power systems Microwave generation Microwave photonics Laser applications Electro-optical waveguides

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Lateral Etched Tunnel Junction Apertures for 1.3μm Vertical-Cavity Surface-Emitting Lasers 4th

Lateral Etched Tunnel Junction Apertures for 1.3μm Vertical...

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4th International Conference on Telecommunications and Communication Engineering, ICTCE 2020

作者： Liu, Cheng Wu, Huizhen School of Microelectronics Shanghai University Shanghai200444 China Key Laboratory of Advanced Display and System Applications of Ministry of Education Shanghai University Shanghai200072 China State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences Shanghai200050 China Department of Physics Zhejiang University Zhejiang Hangzhou310027 China

ISBN: (纸本)9789811656910

1.3μm wafer-bonded vertical-cavity surface-emitting lasers are fabricated, which employ lateral etched p+-InAlAs/n+-InP tunnel junctions as confinement apertures. The VCSEL with a 5μm-diameter aperture exhibits CW operation with threshold current of 0.55 mA, maximum operation temperature up to 82 °C and single-transverse mode emission. The relationship between temperature-dependent characteristics and aperture sizes are discussed. The lateral etched p+-InAlAs/n+-InP tunnel junction aperture is attractive as confinement for high performance wafer-bonded long wavelength VCSELs. © 2022, The Author(s), under exclusive license to Springer Nature Singapore Pte Ltd.

关键词： Surface emitting lasers

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A comparative study of dry-etching nanophotonic devices on a LiNbO3-on-insulator material platform 4

A comparative study of dry-etching nanophotonic devices on a...

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4th Optics Young Scientist Summit, OYSS 2020

作者： Shen, Chen Wang, Chengli Zhu, Yifan Wu, Jinbo Chen, Yang Li, Zhongxu Huang, Kai Zhao, Xiaomeng Song, Sannian Zhang, Jiaxiang Ou, Xin State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences Shanghai200050 China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of Sciences Beijing100049 China

ISBN: (纸本)9781510643963

Three different novel dry-etching methods have been employed to fabricate nanophotonic devices upon a thin-film lithium niobate on insulator material platform. Different dry-etching processes and their advantages, drawbacks and applicable scenarios are systematically studied. Ultra-smooth etching surface with roughness of 0.46 nm (Rq), low-loss ridge waveguides with extracted propagation loss of 1.42 dB/cm, and microring resonators with high optical quality factors up to 1.4×105 are demonstrated using the optimized low-loss etching recipe. The low-loss etching technique lays a foundation for monolithic integration of passive optical components with quantum dots, on-chip broadband electro- optic modulators and wafer-scale lithium niobate integrated photonic circuits. © SPIE. Downloading of the abstract is permitted for personal use only.

关键词： Reactive ion etching

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Effect of High Energy Irradiation on 3 μm Top Silicon Photonic Passive Devices

Effect of High Energy Irradiation on 3 μm Top Silicon Photo...

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2021 Asia Communications and Photonics Conference, ACP 2021

作者： Zhou, Yue Lv, Dongsheng Huang, Yi Wu, Longsheng Wang, Ruxue Li, Wenfei Bi, Dawei Wu, Aimin State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences Shanghai200050 China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of Sciences Beijing100049 China

Optical properties of Mach-Zehnder interferometer and Arrayed Waveguide Grating under 60Co γ-ray and proton irradiation are investigated. Wavelength of MZI blueshifts, and the shift increases with the increasing dose... 详细信息

ISBN: (纸本)9781957171005

关键词： Gamma rays

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Emerging material platforms for integrated microcavity photonics

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Science China(Physics,Mechanics & Astronomy) 2022年第10期65卷 10-28页

作者： Jin Liu Fang Bo Lin Chang Chun-Hua Dong Xin Ou Blake Regan Xiaoqin Shen Qinghai Song Baicheng Yao Wenfu Zhang Chang-Ling Zou Yun-Feng Xiao State Key Laboratory of Optoelectronic Materials and Technologies School of PhysicsSun Yat-sen UniversityGuangzhou 510000China MOE Key Laboratory of Weak-Light Nonlinear Photonics TEDA Institute of Applied Physics and School of PhysicsNankai UniversityTianjin 300071China State Key Laboratory of Advanced Optical Communications System and Networks School of ElectronicsPeking UniversityBeijing 100871China CAS Key Lab of Quantum Information University of Science and Technology of ChinaHefei 230026China State Key Laboratory of Functional Material for Informatics Shanghai Institute of Microsystem and Information TechnologyChinese Academy of SciencesShanghai 200050China School of Mathematical and Physical Sciences University of Technology SydneyUltimo 2007Australia School of Physical Science and Technology ShanghaiTech UniversityShanghai 201210China Ministry of Industry and Information Technology Key Lab of Micro-Nano Optoelectronic Information System Harbin Institute of TechnologyShenzhen 518055China Key Laboratory of Optical Fiber Sensing and Communications(Ministry of Education) University of Electronic Science and Technology of ChinaChengdu 611731China State Key Laboratory of Transient Optics and Photonics Xi’an Institute of Optics and Precision MechanicsChinese Academy of SciencesXi’an 710119China State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics School of PhysicsPeking UniversityBeijing 100871China

Many breakthroughs in technologies are closely associated with the deep understanding and development of new material *** the main material used in microelectronics,Si also plays a leading role in the development of integrated *** indirect bandgap,absence ofχ(2)nonlinearity and the parasitic nonlinear absorptions at the telecom band of Si imposed technological bottlenecks for further improving the performances and expanding the functionalities of Si microcavities in which the circulating light intensity is dramatically *** past two decades have witnessed the burgeoning of the novel material platforms that are compatible with the complementary metal-oxide-semiconductor(COMS)*** particular,the unprecedented optical properties of the emerging materials in the thin film form have resulted in revolutionary progress in microcavity *** this review article,we summarize the recently developed material platforms for integrated photonics with the focus on chip-scale microcavity *** material characteristics,fabrication processes and device applications have been thoroughly discussed for the most widely used new material *** also discuss open challenges and opportunities in microcavity photonics,such as heterogeneous integrated devices,and provide an outlook for the future development of integrated microcavities.

关键词： microcavity integrated optics nonlinear optics

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Robust quantum Griffiths singularity above 1.5 K in nitride thin films

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Physical Review B 2023年第9期107卷 094509-094509页

作者： Xiaoni Wang Lijie Wang Yixin Liu Fan Chen Wanpeng Gao Yu Wu Zulei Xu Wei Peng Zhen Wang Zengfeng Di Wei Li Gang Mu Zhirong Lin State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences Shanghai 200050 China College of Materials Science and Opto-electronic Engineering University of Chinese Academy of Sciences Beijing 100049 China Department of Physics and State Key Laboratory of Surface Physics Fudan University Shanghai 200433 China

Quantum Griffiths singularity (QGS), which is closely correlated with the quenched disorder, is characterized by the divergence of the dynamical critical exponent when approaching zero temperature and the applicability of activated scaling. Typically such a phenomenon is rather rare and only observed in extremely low temperatures. Here we report the experimental observation of a robust QGS in NbN thin films, which survives in a rather high temperature range. The electrical transport properties were measured under the magnetic field up to 12 T. The field induced superconductor-metal transitions were observed with the continuously changed transition points with the decrease of temperature. The dynamical critical exponent based on the conventional power-law scaling reveals a divergent trend when approaching the low-temperature limit. Moreover, the temperature and field dependence of sheet resistance can be described by the activated scaling analysis in the temperature region up to 1.6 K ≤T≤ 4.0 K. We argue that the robustness of QGS in the present system originates from the pronounced Pauli paramagnetic effect due to the strong coupling between magnetic field and the spin degree of freedom of the superconducting electrons.

关键词： Quantum phase transitions Superconducting phase transition Thin films

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Machine learning for semiconductors

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Chip 2022年第4期1卷 66-81页

作者： Duan-Yang Liu Li-Ming Xu Xu-Min Lin Xing Wei Wen-Jie Yu Yang Wang Zhong-Ming Wei State Key Laboratory of Superlattices and Microstructures Institute of Semicon-ductorsChinese Academy of SciencesBeijing 100083China Computer Net-work Information Center Chinese Academy of SciencesBeijing 100083China College of Mathematics and Physics Beijing University of Chemical Technol-ogyBeijing 100029China State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information TechnologyChi-nese Academy of SciencesShanghai 200050China Center of Materials Sci-ence and Optoelectronics Engineering University of Chinese Academy of Sci-encesBeijing 100049China

Thanks to the increasingly high standard of electronics,the semiconductor material science and semiconductor manufacturing have been booming in the last few decades,with massive data accumulated in both *** analyzed effectively,the data will be conducive to the discovery of new semiconductor materials and the development of semicondulctor ***,machine learning,as a fast-growing tool from computer science,is expected to significantly speed up the data *** recently years,many researches on machine learning study of semiconductor materials and semiconductor manufacturing have been *** article is aimed to introduce these progress and present some prospects in this field.

关键词： learning massive manufacturing

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Efficient heterogeneous integration of InP/Si and GaSb/Si templates with ultra-smooth surfaces

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Science China(Information Sciences) 2022年第8期65卷 238-246页

作者： Tingting JIN Jiajie LIN Tiangui YOU Xiaolei ZHANG Hao LIANG Yifan ZHU Jialiang SUN Hangning SHI Chaodan CHI Min ZHOU Robert KUDRAWIEC Shumin WANG Xin OU State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information TechnologyChinese Academy of Sciences Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of Sciences College of Information Science and Engineering Jiaxing University School of Information Science and Technology Shanghai Tech University Department of Semiconductor Materials Engineering Wroclaw University of Science and Technology Department of Microtechnology and Nanoscience Chalmers University of Technology

Heterogeneous integration of InP and GaS b on Si substrates holds a huge potential interest in near-infrared and mid-infrared optoelectronic devices. In this study, 2-inch 180-nm-thick InP and 185-nmthick GaS b thin layers were successfully transferred onto the Si substrates to form high-quality and ultrasmooth InP/Si and GaS b/Si templates using molecular beam epitaxy(MBE) and the ion-slicing technique together with selective chemical etching. The relocation of the implantation-introduced damage in the sacrificial layer enables the transfer of relatively defect-free InP and GaS b thin films. The sacrificial layers were completely etched off by selective chemical etching, leaving ultra-smooth epitaxial surfaces with a roughness of 0.2 nm for the InP/Si template and 0.9 nm for the GaS b/Si template, respectively. Thus, the chemical mechanical polishing(CMP) process was not required to smooth the surface which usually introduces particles and chemical contaminations on the transferred templates. Furthermore, the donor substrate is not consumed and can be recycled to reduce the cost, which provides a paradigm for the sustainable and economic development of the Si integration platform.

关键词： heterogeneous integration InP/Si GaSb/Si MBE ion-slicing technique selective chemical etching

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